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51. 发明授权

US08281740B2 Substrate processing apparatus, and magnetic recording medium manufacturing method 有权
标题翻译：基板处理装置和磁记录介质的制造方法
公开(公告)号：US08281740B2
公开(公告)日：2012-10-09
申请号：US12502344
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23C16/00
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

52. 发明授权

US08263944B2 Directional gas injection for an ion source cathode assembly 有权
标题翻译：离子源阴极组件的定向气体注入
公开(公告)号：US08263944B2
公开(公告)日：2012-09-11
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

53. 发明授权

US08232712B2 Small electron gun 有权
标题翻译：小电子枪
公开(公告)号：US08232712B2
公开(公告)日：2012-07-31
申请号：US12461195
申请日：2009-08-04
申请人： Soichi Katagiri , Takashi Ohshima
发明人： Soichi Katagiri , Takashi Ohshima
IPC分类号： G01N23/225
CPC分类号： H01J37/18 , H01J7/16 , H01J7/18 , H01J37/07 , H01J2237/022 , H01J2237/062 , H01J2237/06316 , H01J2237/1825 , H01J2237/188
摘要： To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10−10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要翻译：提供能够保持用于电子显微镜和电子束拉伸装置的高真空压力的小型电子枪。由非蒸发式吸气泵，加热器，灯丝和电子源定位机构构成的电子枪设置有用于粗排气的开口及其自动打开/关闭阀，以及用于电离和分解惰性气体或用于非蒸发吸气泵的复合气体。通过使用电子枪发射电子的高度和宽度约为15cm的小型电子枪，可以保持10-10托的高真空压力，而不需要离子泵。

54. 发明申请

US20120074316A1 ELECTRO-OPTICAL INSPECTION APPARATUS AND METHOD WITH DUST OR PARTICLE COLLECTION FUNCTION 有权
标题翻译：电光检测装置和方法与尘埃或颗粒收集功能
公开(公告)号：US20120074316A1
公开(公告)日：2012-03-29
申请号：US13195927
申请日：2011-08-02
申请人： Kenji WATANABE , Masahiro HATAKEYAMA , Yoshihiko NAITO , Tatsuya KOHAMA , Kenji TERAO , Takeshi MURAKAMI , Takehide HAYASHI , Kiwamu TSUKAMOTO , Hiroshi SOBUKAWA , Norio KIMURA
发明人： Kenji WATANABE , Masahiro HATAKEYAMA , Yoshihiko NAITO , Tatsuya KOHAMA , Kenji TERAO , Takeshi MURAKAMI , Takehide HAYASHI , Kiwamu TSUKAMOTO , Hiroshi SOBUKAWA , Norio KIMURA
IPC分类号： G01N23/20 , G01N23/00
CPC分类号： H01J37/22 , H01J37/265 , H01J37/29 , H01J2237/004 , H01J2237/022 , H01J2237/24495 , H01J2237/24564 , H01J2237/2817
摘要： An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage (100) on which a sample (200) is placed is disposed inside a vacuum chamber (112) that can be evacuated to vacuum, and a dust collecting electrode (122) is disposed to surround a periphery of the sample (200). The dust collecting electrode (122) is applied with a voltage having the same polarity as a voltage applied to the sample (200) and an absolute value that is the same or larger than an absolute value of the voltage. Thus, because dust or particles such as particles adhere to the dust collecting electrode (122), adhesion of the dust or particles to the sample surface can be reduced. Instead of using the dust collecting electrode, it is possible to form a recess on a wall of the vacuum chamber containing the stage, or to dispose on the wall a metal plate having a mesh structure to which a predetermined voltage is applied. In addition, adhesion of dust or particles can be further reduced by disposing a gap control plate (124) having a through hole (124a) at the center above the sample (200) and the dust collecting electrode (122).
摘要翻译：提供一种电光检查装置，其能够尽可能地防止灰尘或颗粒附着到样品表面。将其上放置有样品（200）的载物台（100）设置在能够抽真空的真空室（112）的内部，并且设置集尘电极（122）以包围样品（200）的周围，。集尘电极（122）施加与施加到样品（200）的电压相同极性的电压和与电压的绝对值相同或更大的绝对值。因此，由于灰尘或颗粒例如颗粒附着在集尘电极122上，所以可以降低灰尘或颗粒对样品表面的粘附。代替使用集尘电极，可以在包含载物台的真空室的壁上形成凹部，或者在壁上配置具有施加了预定电压的网状结构的金属板。此外，通过在样品（200）上方的中心和集尘电极（122）设置具有通孔（124a）的间隙控制板（124），可以进一步减少灰尘或颗粒的附着。

55. 发明授权

US08143590B2 Ion source apparatus 失效
标题翻译：离子源装置
公开(公告)号：US08143590B2
公开(公告)日：2012-03-27
申请号：US12838309
申请日：2010-07-16
申请人： Tsai-Cheng Wang , Chin-Chung Yang , An-Ting Hsiao , Yu-Li Tsai
发明人： Tsai-Cheng Wang , Chin-Chung Yang , An-Ting Hsiao , Yu-Li Tsai
IPC分类号： H01J49/10 , H01J37/08 , H01J7/24
CPC分类号： H01J27/08 , H01J37/08 , H01J2237/0041 , H01J2237/022 , H01J2237/061
摘要： An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.
摘要翻译：离子源装置具有离子源组件和中和器。离子源组件具有主体，散热装置，阳极块和气体分配器。散热装置具有热转印板和第一热侧片。热转印板具有顶部，突起和环形破坏凹部。突起形成在热转印板的顶部。破裂凹部围绕突起径向地形成。第一热侧片围绕突起。气体分配器牢固地安装在突起中。因为突起位于气体分配器和第一热侧片之间，并且破裂凹部围绕突起径向地形成，所以累积的离子，分子和沉积膜颗粒被纵向破坏，并且不会在气体分布器和第一热侧片。

56. 发明申请

US20120061236A1 METHOD FOR MACHINING A SUBSTRATE BY MEANS OF AN ION BEAM, AND ION BEAM DEVICE FOR MACHINING A SUBSTRATE 审中-公开
标题翻译：通过离子束加工基板的方法以及用于加工基板的离子束装置
公开(公告)号：US20120061236A1
公开(公告)日：2012-03-15
申请号：US13226423
申请日：2011-09-06
申请人： Sven Kiontke
发明人： Sven Kiontke
IPC分类号： C23C14/46
CPC分类号： H01J37/305 , H01J37/18 , H01J2237/006 , H01J2237/022 , H01J2237/045
摘要： In a method of machining a substrate by an ion beam, the ion beam is guided by an orifice plate formed at least partly of carbon-containing material. Between the orifice plate and the substrate, an educt that is reactive with carbon is guided such that carbon released from the orifice plate by the ion beam oxidizes. An ion beam device for machining a substrate includes an ion beam source and at least one orifice plate, disposed between the ion beam source and the substrate, for adjusting a cross section of and guiding the ion beam. The orifice plate is formed of carbon-containing material. A delivery unit, for delivering an educt that is reactive with carbon, is disposed such that the educt can be guided between the orifice plate and the substrate, so that carbon released from the orifice plate by the ion beam oxidizes.
摘要翻译：在通过离子束加工衬底的方法中，离子束由至少部分由含碳材料形成的孔板引导。在孔板和基板之间，引导与碳反应的析出物，使得通过离子束从孔板释放的碳氧化。用于加工衬底的离子束装置包括设置在离子束源和衬底之间的离子束源和至少一个孔板，用于调节离子束的横截面和引导离子束。孔板由含碳材料形成。设置用于输送与碳反应的喷射器的输送单元，使得喷射管能够在孔板和基板之间被引导，使得通过离子束从孔板释放的碳被氧化。

57. 发明申请

US20110277932A1 ELECTROSTATIC CHUCK CLEANING DURING SEMICONDUCTOR SUBSTRATE PROCESSING 有权
标题翻译：半导体基板处理中的静电切割清洗
公开(公告)号：US20110277932A1
公开(公告)日：2011-11-17
申请号：US13189811
申请日：2011-07-25
申请人： Dean C. Jennings , Majeed Foad , Jonathan Simmons
发明人： Dean C. Jennings , Majeed Foad , Jonathan Simmons
IPC分类号： B08B13/00 , C23F1/08
CPC分类号： H01L21/67028 , B08B7/00 , H01J2237/022 , H01J2237/2007 , H01J2237/31701 , H01L21/6831
摘要： Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.
摘要翻译：提供了在处理室中清洁静电卡盘的方法和装置。该方法包括将包含反应剂的背面气体流入处理室中的区域，该区域由静电卡盘或清洁站的表面与基底表面之间的空间限定。用反应剂蚀刻静电卡盘的表面以除去碎屑。还提供了一种用于清洁静电卡盘的设备，该设备包括：处理室; 具有通过处理室的壁布置的延伸臂; 固定在细长臂上的静电卡盘; 位于细长臂的范围内的清洁站; 以及可操作地连接到清洁站的反应气体源。

58. 发明授权

US08057146B2 Fastening apparatus 有权
标题翻译：紧固装置
公开(公告)号：US08057146B2
公开(公告)日：2011-11-15
申请号：US12184521
申请日：2008-08-01
申请人： Paul N. Zeytoonian
发明人： Paul N. Zeytoonian
IPC分类号： F16B13/04
CPC分类号： H01J37/3171 , F16B5/02 , F16B37/14 , H01J37/09 , H01J37/32458 , H01J2237/022 , H01J2237/032 , Y10S411/999 , Y10T403/15
摘要： One embodiment of this fastening apparatus comprises a cap with a passage through the length of the cap. This cap is received by the upper panels of a body. The embodiments of this fastening apparatus may have two or more upper panels that form a recess. The body also has a lower region with a passage. The upper panels are flexible and can translate to retain the cap within the recess. A threaded member is disposed in the passage of the body. This cap may be fabricated of graphite in one instance.
摘要翻译：该紧固装置的一个实施例包括具有穿过盖的长度的通道的盖。这个帽子被身体的上部面板所接收。该紧固装置的实施例可以具有形成凹部的两个或更多个上面板。身体也有一个较低的区域与通道。上面板是柔性的并且可以平移以将盖保持在凹部内。螺纹构件设置在主体的通道中。在一种情况下，该盖可以由石墨制成。

59. 发明授权

US08003500B2 Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking 有权
标题翻译：等离子体浸没离子注入工艺与室内调料和调味料层等离子体放电用于晶圆脱扣
公开(公告)号：US08003500B2
公开(公告)日：2011-08-23
申请号：US12503697
申请日：2009-07-15
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/42
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

60. 发明授权

US07994487B2 Control of particles on semiconductor wafers when implanting boron hydrides 有权
标题翻译：在植入硼氢化物时控制半导体晶片上的颗粒
公开(公告)号：US07994487B2
公开(公告)日：2011-08-09
申请号：US12474786
申请日：2009-05-29
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/022
摘要： A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.
摘要翻译：用于在离子注入期间减少颗粒污染的方法包括提供用于通过离子束将离子注入工件的注入系统，其中一个或多个组分处于选择性真空下并且在其上设置有第一状态的一种或多种污染物。气体被引入到植入系统中，其中气体通常与至少一部分一种或多种污染物反应，其中将一种或多种污染物的至少一部分转化为第二状态。至少一部分处于第二状态的一个或多个污染物保持设置在一个或多个部件上，并且其中一个或多个污染物的第二状态的至少一部分通常不会在一个或多个工件上产生颗粒污染。

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