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1. 发明授权

US10629804B2 Method of manufacturing magnetoresistive device 有权
公开(公告)号：US10629804B2
公开(公告)日：2020-04-21
申请号：US12224646
申请日：2007-02-26
申请人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
发明人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
IPC分类号： G11B5/39 , H01L43/08 , H01L43/12 , H01J37/34 , C23C14/56 , H01J37/32 , C23C14/16 , C23C14/08
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

2. 发明授权

US08281740B2 Substrate processing apparatus, and magnetic recording medium manufacturing method 有权
标题翻译：基板处理装置和磁记录介质的制造方法
公开(公告)号：US08281740B2
公开(公告)日：2012-10-09
申请号：US12502344
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23C16/00
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

3. 发明申请

US20100025363A1 SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：US20100025363A1
公开(公告)日：2010-02-04
申请号：US12502344
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

4. 发明申请

US20100189532A1 INLINE-TYPE WAFER CONVEYANCE DEVICE 审中-公开
标题翻译：在线式波浪输送装置
公开(公告)号：US20100189532A1
公开(公告)日：2010-07-29
申请号：US12720372
申请日：2010-03-09
申请人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
发明人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
IPC分类号： H01L21/677
CPC分类号： H01L21/67748 , H01L21/67173 , H01L21/67184 , H01L21/67201 , H01L21/67742
摘要： A structure is provided in which a load lock chamber (51) for carrying in and out a wafer, a first conveyance module (53a) having a first conveyance mechanism (54a), a first process module (52a), a second conveyance module (53b) having a second conveyance mechanism (54b), and a second process module (52b) are sequentially connected in series. A wafer (55) is conveyed between the load lock chamber and the first process module by the first conveyance mechanism and conveyed between the first process module and the second process module by the second conveyance mechanism.
摘要翻译：提供一种结构，其中用于携带和离开晶片的装载锁定室（51），具有第一输送机构（54a）的第一输送模块（53a），第一处理模块（52a），第二输送模块 53b）和第二处理模块（52b）串联连接。晶片（55）通过第一传送机构在装载锁定室和第一处理模块之间传送，并通过第二传送机构在第一处理模块和第二处理模块之间传送。

5. 发明申请

US20100028529A1 SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：US20100028529A1
公开(公告)日：2010-02-04
申请号：US12502328
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： B05D3/06 , C23C16/452
CPC分类号： G11B5/8404
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括：将离子束施加到要被处理的基板的一个表面的第一离子束发生器，以及将离子束施加到待处理的另一表面的第二离子束发生器，其经由衬底彼此相对布置，并且第一离子束发生器中的第一栅极和第二离子束发生器中的第二栅极被配置为彼此不对称。

6. 发明申请

US20080202917A1 Method for Manufacturing a Magnetoresistive Multilayer Film 审中-公开
标题翻译：制造磁阻多层膜的方法
公开(公告)号：US20080202917A1
公开(公告)日：2008-08-28
申请号：US12111861
申请日：2008-04-29
申请人： David Djulianto DJAYAPRAWIRA , Koji TSUNEKAWA , Motonobu NAGAI
发明人： David Djulianto DJAYAPRAWIRA , Koji TSUNEKAWA , Motonobu NAGAI
IPC分类号： C23C14/34
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/39 , G11C11/16 , H01F10/30 , H01F10/3254 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/12 , Y10T29/49025 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.
摘要翻译：本申请公开了一种用于制造具有这样的结构的磁阻多层膜的方法和装置，其中反铁磁性层，钉扎磁化层，非磁性间隔层和自由磁化层依次层压在基板上。用于溅射的气体中加入氧气，通过溅射沉积反铁磁层的膜。当用于溅射的气体中加入氧气时，通过溅射沉积介于衬底和反铁磁性层之间的额外层的膜。用于反铁磁层的膜通过溅射沉积为氩气的气体混合物，并且使用比氩气更大原子序数的另一种气体。

7. 发明授权

US08092139B2 Inline-type wafer conveyance device 有权
标题翻译：直列型晶片输送装置
公开(公告)号：US08092139B2
公开(公告)日：2012-01-10
申请号：US12728588
申请日：2010-03-22
申请人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
发明人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
IPC分类号： H01L21/677
CPC分类号： H01L21/67742 , H01L21/67173 , H01L21/67184 , H01L21/67745 , H01L21/67748 , Y10S414/139
摘要： There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).
摘要翻译：包括用于从外部承载晶片的负载室（51），用于将晶片运送到外部的卸载室（53）和多个输送室（54a，54b，54c）和多个处理模块（52a，52b）串联连接在负载室和卸载室之间。传送室和处理模块交替连接，多个传送室包括连接到装载室的第一端部传送室（54a），连接到卸载室的第二端部传送室（54c），以及另一个或多个中间输送室（54b）。

8. 发明申请

US20100239394A1 INLINE-TYPE WAFER CONVEYANCE DEVICE 有权
标题翻译：在线式波浪输送装置
公开(公告)号：US20100239394A1
公开(公告)日：2010-09-23
申请号：US12728588
申请日：2010-03-22
申请人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
发明人： Naoki Watanabe , Einstein Noel Abarra , David Djulianto Djayaprawira , Yasumi Kurematsu
IPC分类号： H01L21/677
CPC分类号： H01L21/67742 , H01L21/67173 , H01L21/67184 , H01L21/67745 , H01L21/67748 , Y10S414/139
摘要： There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).
摘要翻译：包括用于从外部承载晶片的负载室（51），用于将晶片输送到外部的卸载室（53）和多个输送室（54a，54b，54c）和多个处理模块（52a，52b）串联连接在负载室和卸载室之间。传送室和处理模块交替连接，多个传送室包括连接到装载室的第一端部传送室（54a），连接到卸载室的第二端部传送室（54c），以及另一个或多个中间输送室（54b）。

9. 发明申请

US20090134010A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20090134010A1
公开(公告)日：2009-05-28
申请号：US12274022
申请日：2008-11-19
申请人： Masahiro Shibamoto , Kazuto Yamanaka , Hitoshi Jimba , David Djulianto Djayaprawira
发明人： Masahiro Shibamoto , Kazuto Yamanaka , Hitoshi Jimba , David Djulianto Djayaprawira
IPC分类号： C23C16/44
CPC分类号： C23C14/34 , C23C14/505 , C23C14/568
摘要： A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.
摘要翻译：根据本发明的溅射装置包括用于保持基板的基板保持装置和布置在围绕基板的多个位置处的多个气体喷射口的气体引入路径，其特征在于，至少一个气体导入路径是设置有气体导入连接口，并且设置在至少一个气体导入路径中的气体引入连接口的气体喷射口的数量小于在没有气体的其他气体导入路径中设置的气体喷射口的数量引入连接端口，或者在至少一个气体引入路径中设置有气体引入连接口的每个气体喷射口的孔径小于设置在另一个气体引入路径中的每个气体喷射口的孔径，而没有气体引入连接口。

10. 发明授权

US08367156B2 Method of manufacturing magnetoresistive device and apparatus for manufacturing the same 有权
标题翻译：制造磁阻装置的方法及其制造装置
公开(公告)号：US08367156B2
公开(公告)日：2013-02-05
申请号：US13177237
申请日：2011-07-06
申请人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
发明人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.
摘要翻译：磁阻器件具有设置在第一铁磁层和第二铁磁层之间的MgO（氧化镁）层。该器件通过在成膜室中形成MgO层的膜来制造。对于氧化气体的吸气剂效果大的物质粘附到设置在用于形成MgO层的室中的部件的表面上。具有较大吸气效果的物质是其氧气吸附能值为145kcal / mol以上的物质。特别地，Ta（钽）作为构成磁阻器件的物质是优选的。

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