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1. 发明申请

US20100028529A1 SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：US20100028529A1
公开(公告)日：2010-02-04
申请号：US12502328
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： B05D3/06 , C23C16/452
CPC分类号： G11B5/8404
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括：将离子束施加到要被处理的基板的一个表面的第一离子束发生器，以及将离子束施加到待处理的另一表面的第二离子束发生器，其经由衬底彼此相对布置，并且第一离子束发生器中的第一栅极和第二离子束发生器中的第二栅极被配置为彼此不对称。

2. 发明授权

US08281740B2 Substrate processing apparatus, and magnetic recording medium manufacturing method 有权
标题翻译：基板处理装置和磁记录介质的制造方法
公开(公告)号：US08281740B2
公开(公告)日：2012-10-09
申请号：US12502344
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23C16/00
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

3. 发明申请

US20100025363A1 SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD 有权
标题翻译：基板加工设备和磁记录介质制造方法
公开(公告)号：US20100025363A1
公开(公告)日：2010-02-04
申请号：US12502344
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： G11B5/8404 , H01J27/024 , H01J37/04 , H01J37/09 , H01J37/3053 , H01J37/32422 , H01J2237/022 , H01J2237/0453 , H01J2237/0822 , H01J2237/0825
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

4. 发明授权

US08601978B2 Substrate processing apparatus, and magnetic recording medium manufacturing method 有权
标题翻译：基板处理装置和磁记录介质的制造方法
公开(公告)号：US08601978B2
公开(公告)日：2013-12-10
申请号：US12502328
申请日：2009-07-14
申请人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
发明人： Kazuto Yamanaka , Masahiro Shibamoto , Ayumu Miyoshi , Satoshi Hitomi , David Djulianto Djayaprawira
IPC分类号： C23C16/00
CPC分类号： G11B5/8404
摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.
摘要翻译：本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。根据本发明实施例的基板处理装置包括：第一离子束发生器，其将离子束施加到待处理的基板的一个表面;以及第二离子束发生器，其将离子束施加到待处理的另一表面，其经由衬底彼此相对布置，并且第一离子束发生器中的第一栅极和第二离子束发生器中的第二栅极被配置为彼此不对称。

5. 发明申请

US20090134010A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20090134010A1
公开(公告)日：2009-05-28
申请号：US12274022
申请日：2008-11-19
申请人： Masahiro Shibamoto , Kazuto Yamanaka , Hitoshi Jimba , David Djulianto Djayaprawira
发明人： Masahiro Shibamoto , Kazuto Yamanaka , Hitoshi Jimba , David Djulianto Djayaprawira
IPC分类号： C23C16/44
CPC分类号： C23C14/34 , C23C14/505 , C23C14/568
摘要： A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.
摘要翻译：根据本发明的溅射装置包括用于保持基板的基板保持装置和布置在围绕基板的多个位置处的多个气体喷射口的气体引入路径，其特征在于，至少一个气体导入路径是设置有气体导入连接口，并且设置在至少一个气体导入路径中的气体引入连接口的气体喷射口的数量小于在没有气体的其他气体导入路径中设置的气体喷射口的数量引入连接端口，或者在至少一个气体引入路径中设置有气体引入连接口的每个气体喷射口的孔径小于设置在另一个气体引入路径中的每个气体喷射口的孔径，而没有气体引入连接口。

6. 发明申请

US20080217170A1 SPUTTERING SYSTEM 审中-公开
标题翻译：喷射系统
公开(公告)号：US20080217170A1
公开(公告)日：2008-09-11
申请号：US12103725
申请日：2008-04-16
申请人： Masahiro Shibamoto , Kazuto Yamanaka , Naoki Watanabe
发明人： Masahiro Shibamoto , Kazuto Yamanaka , Naoki Watanabe
IPC分类号： C25B9/00
CPC分类号： H01J37/3244 , C23C14/0063 , H01J37/34
摘要： A sputtering system including a vacuum chamber, at least one cathode located in said vacuum chamber, a first gas introduction mechanism for supplying a gas along a surface of the cathode, which first gas introduction mechanism is located in the vacuum chamber and provided through the at least one cathode, a second gas introduction mechanism for supplying a gas along a surface of the at least one cathode, which second gas introduction mechanism is located in the vacuum chamber and provided around the at least one cathode, a third gas introduction mechanism for supplying a gas into the vacuum chamber, which third gas introduction mechanism has gas supply inlets positioned at a location radially outside of said second gas introduction mechanism and above said at least one cathode, and a vacuum evacuation unit for evacuating the inside of said vacuum chamber.
摘要翻译：一种溅射系统，包括真空室，位于所述真空室中的至少一个阴极，用于沿阴极表面供应气体的第一气体引入机构，所述第一气体引入机构位于真空室中，至少一个阴极，用于沿着所述至少一个阴极的表面供应气体的第二气体引入机构，所述第二气体引入机构位于所述真空室中并设置在所述至少一个阴极周围;第三气体引入机构，用于供应进入真空室的气体，所述第三气体导入机构具有位于所述第二气体导入机构的径向外侧的位置和所述至少一个阴极上方的气体供给入口，以及用于抽真空所述真空室的真空抽气单元。

7. 发明申请

US20050011756A1 Sputtering system 审中-公开
标题翻译：溅射系统
公开(公告)号：US20050011756A1
公开(公告)日：2005-01-20
申请号：US10852148
申请日：2004-05-25
申请人： Masahiro Shibamoto , Kazuto Yamanaka , Naoki Watanabe
发明人： Masahiro Shibamoto , Kazuto Yamanaka , Naoki Watanabe
IPC分类号： C23C14/34 , C23C14/00 , C23C14/32 , G11B5/84 , G11B5/851 , H01J37/32 , H01J37/34
CPC分类号： H01J37/3244 , C23C14/0063 , H01J37/34
摘要： A sputtering system provided with a vacuum chamber into which a substrate is loaded, a cathode unit provided in the vacuum chamber so as to face the substrate and including a cathode with a target, a power source for supplying power to the cathode of the cathode unit, a vacuum evacuation system for evacuating the inside of the vacuum chamber to a vacuum, and a gas introduction mechanism for making reactive gas flow from a center of the cathode unit along the surface of the target to the outsides, wherein reactive gas fed from a reactive gas feed system flows from the center part of the cathode unit along the surface of the target to the outsides due to the center gas introduction mechanism.
摘要翻译：一种设置有真空室的溅射系统，其中装载有基板，设置在真空室中以面对基板并且包括具有目标的阴极的阴极单元，用于向阴极单元的阴极供电的电源，用于将真空室内部抽真空的真空排气系统，以及用于使反应性气体从阴极单元的中心沿着靶的表面向外部流动的气体导入机构，其中，从反应性气体供给系统由于中心气体引入机构而从阴极单元的中心部分沿着靶的表面流到外部。

8. 发明授权

US08658048B2 Method of manufacturing magnetic recording medium 有权
标题翻译：磁记录介质的制造方法
公开(公告)号：US08658048B2
公开(公告)日：2014-02-25
申请号：US13285304
申请日：2011-10-31
申请人： Kazuto Yamanaka , Shogo Hiramatsu
发明人： Kazuto Yamanaka , Shogo Hiramatsu
IPC分类号： B44C1/22
CPC分类号： G11B5/855
摘要： The present invention aims to prevent decreases in etching rate due to adhesion of an etched film to a substrate holder. A method of manufacturing a magnetic recording medium includes: forming a first film on a substrate holder not yet having a substrate mounted thereon; mounting a substrate on the substrate holder having the first film formed thereon, the substrate having a resist layer formed on a multilayer film including a magnetic film layer, the resist layer having a predetermined pattern; and processing the magnetic film layer into a shape based on the predetermined pattern by performing dry etching on the substrate. The first film is a film that is not etched as easily as the films in the multilayer film to be removed by the dry etching.
摘要翻译：本发明旨在防止由于蚀刻膜粘附到衬底保持器而导致的蚀刻速率的降低。制造磁记录介质的方法包括：在不具有安装在其上的基板的基板保持架上形成第一膜; 将基板安装在其上形成有第一膜的基板保持器上，所述基板具有形成在包括磁性膜层的多层膜上的抗蚀剂层，所述抗蚀剂层具有预定图案; 以及通过对所述基板进行干法蚀刻，将所述磁性膜层加工成基于所述规定图案的形状。第一膜是不像通过干蚀刻除去的多层膜中的膜那样容易地蚀刻的膜。

9. 发明申请

US20110284497A1 PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM 有权
标题翻译：等离子体处理装置和制造磁记录介质的方法
公开(公告)号：US20110284497A1
公开(公告)日：2011-11-24
申请号：US13197278
申请日：2011-08-03
申请人： Kazuto Yamanaka , Akio Sato
发明人： Kazuto Yamanaka , Akio Sato
IPC分类号： G11B5/84 , C23F1/00 , H05H1/24 , C23C16/50
CPC分类号： G11B5/855 , G11B5/84 , H01J37/321 , H01J37/32357 , H01J37/32651 , H01J2237/3341
摘要： A plasma processing apparatus includes a discharge window made of a dielectric material, a discharge chamber which is grounded and includes an opening formed at its one end and the discharge window provided at its other end facing the opening, a gas supply system which supplies a gas into the discharge chamber, a high-frequency power application mechanism which applies a high-frequency power to the gas to generate a plasma inside the discharge chamber, a substrate holder which can hold a substrate while facing the discharge window on the outer side of the discharge chamber, a shielding member which partially shields the plasma that impinges on the substrate, and a supporting member which supports the shielding member. The supporting member is grounded and fixed on the shielding member at a position which is farther from the substrate than the shielding member and different from that of the discharge window.
摘要翻译：等离子体处理装置包括由电介质材料制成的放电窗，接地的放电室，其一端形成有开口，在其另一端设置有面向开口的排出窗，供给气体进入放电室的高频电力施加机构，其向所述气体施加高频电力以在所述放电室内产生等离子体;衬底保持器，其可以在面向所述放电室的外侧上的所述放电窗口的同时保持衬底放电室，部分屏蔽冲击基板的等离子体的屏蔽部件和支撑该屏蔽部件的支撑部件。支撑构件在屏蔽构件上接地并固定在比屏蔽构件更远离衬底的位置处并且不同于排出窗口的位置处。

10. 发明授权

US08317971B2 Plasma processing apparatus and method of manufacturing magnetic recording medium 有权
标题翻译：等离子体处理装置及制造磁记录介质的方法
公开(公告)号：US08317971B2
公开(公告)日：2012-11-27
申请号：US13197278
申请日：2011-08-03
申请人： Kazuto Yamanaka , Akio Sato
发明人： Kazuto Yamanaka , Akio Sato
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： G11B5/855 , G11B5/84 , H01J37/321 , H01J37/32357 , H01J37/32651 , H01J2237/3341
摘要： A plasma processing apparatus includes a discharge window made of a dielectric material, a discharge chamber which is grounded and includes an opening formed at its one end and the discharge window provided at its other end facing the opening, a gas supply system which supplies a gas into the discharge chamber, a high-frequency power application mechanism which applies a high-frequency power to the gas to generate a plasma inside the discharge chamber, a substrate holder which can hold a substrate while facing the discharge window on the outer side of the discharge chamber, a shielding member which partially shields the plasma that impinges on the substrate, and a supporting member which supports the shielding member. The supporting member is grounded and fixed on the shielding member at a position which is farther from the substrate than the shielding member and different from that of the discharge window.
摘要翻译：等离子体处理装置包括由电介质材料制成的放电窗，接地的放电室，其一端形成有开口，在其另一端设置有面向开口的排出窗，供给气体进入放电室的高频电力施加机构，其向所述气体施加高频电力以在所述放电室内产生等离子体;衬底保持器，其可以在面向所述放电室的外侧上的所述放电窗口的同时保持衬底放电室，部分屏蔽冲击基板的等离子体的屏蔽部件和支撑该屏蔽部件的支撑部件。支撑构件在屏蔽构件上接地并固定在比屏蔽构件更远离衬底的位置处并且不同于排出窗口的位置处。

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