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51. 发明申请

US20060020098A1 Polysiloxane having phosphorylcholine group and process for producing the same 失效
标题翻译：具有磷酸胆碱基团的聚硅氧烷及其制造方法
公开(公告)号：US20060020098A1
公开(公告)日：2006-01-26
申请号：US10534399
申请日：2003-11-20
申请人： Kazuyuki Miyazawa , Takashi Oka
发明人： Kazuyuki Miyazawa , Takashi Oka
IPC分类号： C08G77/04 , C08G77/26 , C08G77/30 , C08L83/04
CPC分类号： C08L83/08 , A61K8/896 , A61Q19/00 , C08G77/30 , C08G77/395
摘要： A polysiloxane having a phosphorylcholine group represented by the following general formula (1). To develop a method to obtain a polysiloxane having a phosphorylcholine group with ease and great versatility and provide a polysiloxane having a phosphorylcholine group in order to obtain a polysiloxane that has a wide range of application as a biocompatible material and a cosmetic material.
摘要翻译：具有由以下通式（1）表示的磷酸胆碱基的聚硅氧烷。为了开发获得具有磷酸胆碱基团的聚硅氧烷的方法，并且具有广泛性，并提供具有磷酸胆碱基团的聚硅氧烷，以获得作为生物相容性材料和化妆品材料具有广泛应用的聚硅氧烷。

52. 发明授权

US06496411B2 Non-volatile multi-level semiconductor flash memory device and method of driving same 有权
公开(公告)号：US06496411B2
公开(公告)日：2002-12-17
申请号：US10024722
申请日：2001-12-21
申请人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
发明人： Naoki Yamada , Hiroshi Sato , Tetsuya Tsujikawa , Kazuyuki Miyazawa
IPC分类号： G11C1134
CPC分类号： G11C16/0483 , G11C7/1006 , G11C8/00 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/26 , G11C2211/5621
摘要： In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.

53. 发明授权

US06335884B1 Semiconductor memory device and defect remedying method thereof 有权
标题翻译：半导体存储器件及其缺陷补救方法
公开(公告)号：US06335884B1
公开(公告)日：2002-01-01
申请号：US09714268
申请日：2000-11-17
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C1300
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. Thanks to this structure in which the peripheral circuits are arranged at the center portion of the chip, the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.
摘要翻译：这里公开了一种半导体存储器件，其中外围电路布置在由纵向中心部分和横向中心部分组成的半导体芯片的交叉区域中，并且其中存储器阵列布置在由交叉区域。由于外围电路布置在芯片的中心部分的这种结构，最长的信号传输路径可以缩短到芯片尺寸的大约一半，以加快DRAM的大容量。

54. 发明授权

US06326011B1 Copolymer containing reactive silyl groups, composition containing the same and method of treatment with the same 有权
标题翻译：含有反应性甲硅烷基的共聚物，含有相同的组成和与之相同的处理方法
公开(公告)号：US06326011B1
公开(公告)日：2001-12-04
申请号：US09230582
申请日：1999-01-28
申请人： Kazuyuki Miyazawa , Toshio Yanaki , Fumiaki Matsuzaki
发明人： Kazuyuki Miyazawa , Toshio Yanaki , Fumiaki Matsuzaki
IPC分类号： A61K600
摘要： A copolymer having silyl groups with at least one reactive functional group bonded thereto. The copolymer comprises a monomer (A) shown by the following Formula (I): wherein R1 is hydrogen atom or methyl; R2 is alkylene group having 1-6 carbon atoms; and R3, R4 and R5 each is a reactive functional group which can cross-link molecules of the copolymer by hydrolyzing. Further, the copolymer preferably comprises, as a constituent monomer, an alkyl (meth)acrylate and a siloxane-containing (meth)acrylate. A coating-forming method comprises hydrolyzing the composition on a material to be treated to cross-link molecules of the copolymer when on the material. A coating of the cross-linked copolymer has resistance to washing. This coating can modify the nature of hair, improve make-up retention, and provide skin-protecting. It can impart water-repellency, resistance to fouling, suitability as a sizing and crease resistance to fibers. Further, it can improve a skin-cleaning effect, applicability, strippability and coating-strength of a peeling-off type cosmetic pack.
摘要翻译：具有与其键合有至少一个反应性官能团的甲硅烷基的共聚物。共聚物包含由下式（I）表示的单体（A）：其中R 1 是氢原子或甲基; R 2 是具有1-6个碳原子的亚烷基; 和R 3 ，R 4 和R 5 各自是可通过水解将共聚物分子交联的反应性官能团。此外，共聚物优选包含（甲基）丙烯酸烷基酯和含硅氧烷的（甲基）丙烯酸酯作为构成单体。涂覆形成方法包括在待处理的材料上水解组合物以在材料上交联共聚物的分子。交联共聚物的涂层具有耐洗涤性。这种涂层可以改变头发的性质，改善补妆保持性，并提供皮肤保护。它可以赋予防水性，耐污垢性，适合性作为纤维的上胶和抗折皱性。此外，它可以改善剥离型化妆品包装的皮肤清洁效果，适用性，剥离性和涂布强度。

55. 发明授权

US06121681A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06121681A
公开(公告)日：2000-09-19
申请号：US856145
申请日：1997-05-14
申请人： Shigeru Tanaka , Yasuhiro Nakamura , Hitoshi Miwa , Kazuyuki Miyazawa
发明人： Shigeru Tanaka , Yasuhiro Nakamura , Hitoshi Miwa , Kazuyuki Miyazawa
IPC分类号： H01L25/10 , H01L23/495 , H01L25/18 , H05K1/18 , H05K5/02 , H01L23/34
CPC分类号： H05K5/0269 , H01L23/49541 , H01L24/49 , H05K1/181 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01055 , H01L2924/01058 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3011 , H01L2924/30111 , H05K2201/09236 , H05K2201/09772 , H05K2201/10689 , Y02P70/611
摘要： A resin-encapsulated semiconductor package and a packaging structure, make it possible to provide for a high density mounting arrangement. Specifically, outer leads protrude from the two long sides of a rectangular package. The inner leads in the package, connected to the outer leads protruding from one long side, are connected through wires to the bonding pads of a semiconductor chip encapsulated in the package, whereas the inner leads in the package, connected to the outer leads protruding from the other long side, are in an electrically floating state in the package. The semiconductor packages are arranged in a direction on a card-shaped mounting board, and the opposed outer leads of adjoining semiconductor packages are electrically connected by wiring on the mounting board. The wirings are laid below the semiconductor packages so that they extend generally linearly.
摘要翻译：树脂封装的半导体封装和封装结构使得可以提供高密度的安装布置。具体地说，外引线从矩形封装的两个长边突出。封装中的内引线，连接到从一个长边突出的外引线，通过导线连接到封装在封装中的半导体芯片的焊盘，而封装中连接到外引线的内引线从另一个长边在封装中处于电浮动状态。半导体封装沿着卡形安装板的方向排列，相邻的半导体封装的外引线通过安装板上的布线电连接。布线布置在半导体封装的下方，使得它们大致线性地延伸。

56. 发明授权

US5670409A Method of fabricating a semiconductor IC DRAM device enjoying enhanced focus margin 失效
标题翻译：制造具有增强的聚焦余量的半导体IC DRAM器件的方法
公开(公告)号：US5670409A
公开(公告)日：1997-09-23
申请号：US511810
申请日：1995-08-07
申请人： Hiroshi Otori , Kazuhiko Kajigaya , Kazuyuki Miyazawa , Masaharu Kubo , Atsuyoshi Koike , Fumiyuki Kanai
发明人： Hiroshi Otori , Kazuhiko Kajigaya , Kazuyuki Miyazawa , Masaharu Kubo , Atsuyoshi Koike , Fumiyuki Kanai
IPC分类号： H01L21/304 , H01L21/8239 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10844 , H01L27/1052
摘要： A method of fabricating a semiconductor integrated circuit device includes: recessing a second surface portion of a semiconductor substrate; forming elements of a first circuit region capable of performing a first function at a first surface portion of the semiconductor substrate and elements of a second circuit region capable of performing a second function at the recessed second surface portion of the semiconductor substrate, the elements of the first circuit region and those of the second circuit region having relatively small and large sizes as generally measured in a direction perpendicular to the surface portions of the semiconductor substrate, respectively; forming an insulating film to cover the first and second circuit regions, with a result that a level difference is caused between first and second portions of the insulating film on the first and second circuit regions at a relatively lower level and at a relatively higher level, respectively; effecting chemical-mechanical planarization of the insulating film to suppress the level difference in the insulating film for enhancing a focus margin for successive photolithographic steps; and forming wiring conductors on the insulating film with the suppressed level difference, enjoying the enhanced focus margin.
摘要翻译：一种制造半导体集成电路器件的方法包括：使半导体衬底的第二表面部分凹陷; 形成能够在半导体衬底的第一表面部分处执行第一功能的第一电路区域的元件和能够在半导体衬底的凹入的第二表面部分执行第二功能的第二电路区域的元件，第一电路区域和第二电路区域的第一电路区域分别具有通常在垂直于半导体衬底的表面部分的方向上测量的相对较小和大的尺寸; 形成绝缘膜以覆盖第一和第二电路区域，结果是在第一和第二电路区域上的绝缘膜的第一和第二部分之间在相对较低的电平和相对较高的水平上产生电平差，分别; 实现绝缘膜的化学机械平面化，以抑制绝缘膜中的水平差，以提高连续光刻步骤的聚焦余量; 并且在绝缘膜上形成具有抑制的电平差的布线导体，享受增强的聚焦余量。

57. 发明授权

US5579256A Semiconductor memory device and defect remedying method thereof 失效
公开(公告)号：US5579256A
公开(公告)日：1996-11-26
申请号：US455411
申请日：1995-05-31
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C5/00 , G11C5/02 , G11C11/406 , H01L23/485
CPC分类号： H01L24/05 , G11C11/406 , G11C5/025 , H01L24/06 , H01L24/48 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01087 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , Y10S257/908
摘要： Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. Thanks to this structure in which the peripheral circuits are arranged at the center portion of the chip, the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

58. 发明授权

US5304868A Non-inverting buffer circuit device and semiconductor memory circuit device 失效
标题翻译：同相缓冲电路器件和半导体存储器电路器件
公开(公告)号：US5304868A
公开(公告)日：1994-04-19
申请号：US783781
申请日：1991-10-29
申请人： Yuji Yokoyama , Kazuyuki Miyazawa , Hitoshi Miwa , Shoji Wada
发明人： Yuji Yokoyama , Kazuyuki Miyazawa , Hitoshi Miwa , Shoji Wada
IPC分类号： G11C11/409 , G11C7/10 , G11C8/06 , G11C11/417 , H03K19/013 , H03K19/0175 , H03K19/0944 , H03K19/02 , G11C8/00
CPC分类号： H03K19/0136 , G11C7/1051 , G11C8/06 , H03K19/09448
摘要： A non-inverting buffer circuit device suited for an input buffer circuit of a semiconductor memory is provided so that the number of logic gate stages can be reduced to realize a high speed operation. The circuit is designed in such a way that an MOS transistor at an input stage drives a bipolar transistor at an output stage to produce an output. An n-channel MOS transistor and a p-channel MOS transistor connected in parallel between the base and the collector of the bipolar transistor are on/off controlled by an inverted signal of the input digital signal and a non-inverted signal thereof, respectively. In another aspect, the input buffer circuit includes an inverted signal outputting circuit, and a non-inverted signal outputting circuit in the set mode the input signal in the non-inverted state and outputting in the reset mode the signal at the prescribed potential. The inverted signal outputting circuit includes a bipolar transistor producing an output signal at its collector potential, a first switching circuit for controlling supply of a collector current to the bipolar transistor, an n-channel MOS transistor, connected in parallel between the base and the collector of the bipolar transistor, for supplying a base current to the bipolar transistor in accordance with the input signal, and a second switching circuit for controlling supply of the base current to the bipolar transistor, wherein the first switching circuit and the second switching circuit are selectively on-off controlled.
摘要翻译：提供了适用于半导体存储器的输入缓冲电路的非反相缓冲电路装置，可以减少逻辑门级的数量，实现高速运算。该电路被设计成使得输入级的MOS晶体管在输出级驱动双极晶体管以产生输出。并联连接在双极型晶体管的基极和集电极之间的n沟道MOS晶体管和p沟道MOS晶体管分别通过输入数字信号的反相信号和非反相信号进行开/关控制。在另一方面，输入缓冲电路包括反相信号输出电路和非反相信号输出电路，在设定模式下输入处于非反相状态的输入信号，并以复位模式输出处于规定电位的信号。反相信号输出电路包括产生其集电极电位的输出信号的双极晶体管，用于控制向双极晶体管供给集电极电流的第一开关电路，并联在基极和集电极之间的n沟道MOS晶体管用于根据输入信号向双极晶体管提供基极电流;以及第二开关电路，用于控制对双极晶体管的基极电流的供应，其中第一开关电路和第二开关电路选择性地开关控制。

59. 发明授权

US08426627B2 Phosphorylcholine group-containing compound and surface modifying agent composed of such compound 有权
标题翻译：含有这些化合物的含有磷酰胆碱的化合物和表面改性剂
公开(公告)号：US08426627B2
公开(公告)日：2013-04-23
申请号：US12955086
申请日：2010-11-29
申请人： Yousuke Toujo , Kazuyuki Miyazawa , Taketoshi Kanda , Hiroshi Kutsuna , Kenichi Sakuma , Masayoshi Wada , Yukimitsu Suda
发明人： Yousuke Toujo , Kazuyuki Miyazawa , Taketoshi Kanda , Hiroshi Kutsuna , Kenichi Sakuma , Masayoshi Wada , Yukimitsu Suda
IPC分类号： C07F9/02
CPC分类号： B01J20/286 , B01J20/28004 , B01J20/28019 , B01J20/28057 , B01J20/28078 , B01J20/289 , B01J20/3092 , B01J20/3204 , B01J20/3246 , B01J20/3257 , B01J20/3259 , B01J2220/54 , B01J2220/58 , B01L3/569 , B01L2300/163 , C07F9/091
摘要： A phosphorylcholine group-containing chemical compound represented by the following formula (1): wherein, m denotes 2-6 and n denotes 1-4, X1, X2, and X3, are independent of each other, and denote a methoxy group, ethoxy group, or halogen; up to two of X1, X2, and X3 can be any of the following groups: a methyl group, ethyl group, propyl group, isopropyl group, butyl group, or isobutyl group: R is a structure represented by the following formula (2) (the chemical compound of formula (1) in the structure of formula (2) being expressed as A-R—B): A-(CH2)L—B (2) wherein, in formula formulas (2), L is 1-6.
摘要翻译：由下式（1）表示的含磷酰胆碱基的化合物：其中，m表示2-6，n表示1-4，X1，X2和X3彼此独立地表示甲氧基，乙氧基基团或卤素; X 1，X 2和X 3中的至多2个可以是下列基团中的任何一个：甲基，乙基，丙基，异丙基，丁基或异丁基：R是由下式（2）表示的结构，（式（2）的式（1）化合物表示为ARB）：A-（CH2）LB（2）式中，式（2）中L为1-6。

60. 发明授权

US08367082B2 Microgel and external compositions containing the same 有权
标题翻译：微凝胶和含有它们的外用组合物
公开(公告)号：US08367082B2
公开(公告)日：2013-02-05
申请号：US12082130
申请日：2008-04-09
申请人： Kazuyuki Miyazawa , Isamu Kaneda , Toshio Yanaki , Tadashi Nakamura , Masatoshi Ochiai , Tomoyuki Kawasoe
发明人： Kazuyuki Miyazawa , Isamu Kaneda , Toshio Yanaki , Tadashi Nakamura , Masatoshi Ochiai , Tomoyuki Kawasoe
IPC分类号： A61K8/02 , A61Q5/00
CPC分类号： A61K8/042 , A61K8/0212 , A61K8/44 , A61K8/65 , A61K8/676 , A61K8/73 , A61K8/733 , A61K8/8147 , A61K8/8152 , A61K8/8158 , A61K8/86 , A61K8/97 , A61K8/982 , A61K9/0014 , A61K47/36 , A61K47/42 , A61K2800/412 , A61Q5/06 , A61Q5/065 , A61Q19/00 , A61Q19/02 , C08L5/00 , C08L5/04 , C08L5/12 , C08L89/06 , C08L2666/02
摘要： The present invention provides a microgel having a mean particle size of 0.1-1,000 μm, the microgel being produced from a gel which is formed by use of a hydrophilic compound capable of forming a gel. An external composition containing the microgel provides an excellent sensation during use; i.e., the composition provides neither sticky sensation during use nor frictional sensation. Furthermore, even when a large amount of a pharmaceutical ingredient, such as a whitening ingredient, or a salt is incorporated into the composition, the viscosity of the composition is not lowered, and the composition exhibits excellent viscosity increasing property. In addition, the composition exhibits long-term stability, without inviting separation of water.
摘要翻译：本发明提供了一种平均粒度为0.1-1,000μm的微凝胶，该微凝胶由凝胶制成，其通过使用能形成凝胶的亲水性化合物形成。含有微凝胶的外用组合物在使用过程中提供极好的感觉; 即，该组合物在使用期间既不提供粘性感，也不提供摩擦感。此外，即使在组合物中加入大量的增白成分或者盐等药物成分，也不会降低组合物的粘度，而且显示出优异的增粘性。此外，该组合物长期稳定，不会引起水分离。

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