会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明申请
    • PATTERN FORMING METHOD
    • 图案形成方法
    • US20090311633A1
    • 2009-12-17
    • US11913922
    • 2007-10-10
    • Toshiki Ito
    • Toshiki Ito
    • G03F7/20
    • G03F7/265G03F7/022G03F7/0755
    • A pattern forming method includes a step of forming a photosensitive organic material layer by providing, on a substrate, a photosensitive organic material which is protected by a hydrophobic photodegradable group and is capable of generating a hydrophilic group selected from the group consisting of amino group, hydroxyl group, carboxyl group, and sulfo group by light irradiation; a step of selectively exposing the photosensitive organic material layer to light in a pattern to generate the hydrophilic group at an exposed portion; a step of providing a block polymer having a hydrophilic segment and a hydrophobic segment, on the photosensitive organic material layer after the exposure, to separate segments of the block polymer into the hydrophilic segment at a portion where the hydrophilic group generated by the exposure is present and the hydrophobic segment at a portion where the hydrophilic group is not present; and a step of removing one of the separated segments to form a pattern of the other segment.
    • 图案形成方法包括通过在基板上设置受疏水性光降解性基团保护的感光性有机材料并且能够产生选自氨基, 羟基,羧基和磺基; 将感光有机材料层选择性地暴露于图案中的光以在暴露部分产生亲水基团的步骤; 在曝光后的光敏有机材料层上提供具有亲水性链段和疏水链段的嵌段聚合物的步骤,在存在通过曝光产生的亲水基团的部分将嵌段聚合物的片段分离成亲水链段 和亲水基团不存在部分的疏水链段; 以及去除分离的片段之一以形成另一片段的图案的步骤。
    • 46. 发明申请
    • Photosensitive element, resist pattern formation method and printed wiring board production method
    • 感光元件,抗蚀剂图案形成方法和印刷线路板制造方法
    • US20070105036A1
    • 2007-05-10
    • US10572859
    • 2004-09-17
    • Takashi KumakiMasahiro MiyasakaYasuhisa IchihashiToshiki ItoMakoto Kaji
    • Takashi KumakiMasahiro MiyasakaYasuhisa IchihashiToshiki ItoMakoto Kaji
    • G03C1/00
    • G03F7/029C08F2/50G03F7/031Y10S430/106Y10S430/114Y10S430/115
    • The present invention is a photosensitive element including a support and a photosensitive resin composition layer composed of a photosensitive resin composition containing (A) a binder polymer, (B) a photopolymerizable compound, and (C) a photopolymerization initiator, wherein, the photosensitive resin composition contains a thioxanthone-based compound represented by the following general formula (I) as the component (C), and when the parts by weight of the thioxanthone-based compound relative to 100 parts by weight for the total weight of the component (A) and the component (B) is taken to be P, and the film thickness of the photosensitive resin composition layer is taken to be Q (μm), then R, which is the product of P and Q, satisfies the condition of the following formula (1). In the following general formula (I), R1 to R8 represent a hydrogen atom, halogen atom or hydrocarbon group. 25.5≦R≦79.0  (1) [Chemical Formula I]
    • 本发明是一种感光性元件,其特征在于,包含支持体和感光性树脂组合物层,所述感光性树脂组合物含有(A)粘合剂聚合物,(B)光聚合性化合物和(C)光聚合引发剂, 组合物含有作为组分(C)的由以下通式(I)表示的噻吨酮基化合物,并且当相对于组分(A)的总重量相对于100重量份的噻吨酮系化合物的重量份 ),成分(B)为P,感光性树脂组合物层的膜厚取为Q(母体),则P和Q的乘积R满足以下条件 公式1)。 在下列通式(I)中,R 1至R 8表示氢原子,卤素原子或烃基。 <?in-line-formula description =“In-line Formulas”end =“lead”?> 25.5 <= R <= 79.0(1)<?in-line-formula description =“In-line Formulas”end = 尾“?> [化学式I]
    • 48. 发明授权
    • Near-field exposure method
    • 近场曝光法
    • US07923201B2
    • 2011-04-12
    • US12048767
    • 2008-03-14
    • Akira TeraoToshiki Ito
    • Akira TeraoToshiki Ito
    • G03F7/20
    • G03F7/70325G03F1/50G03F7/2014
    • A near-field exposure method in which an exposure mask having a light blocking film with an opening smaller than a wavelength of light from an exposure light source is used, and an object is exposed by near-field light produced at the opening of the exposure mask based on the exposure light from the exposure light source. A width of the opening is determined to satisfy equations (1), (2) and (3) below, wherein the width of the opening of the exposure mask is denoted by s (nm), a processing pitch of the object to be exposed is denoted by p (nm) and coefficients are denoted by a and b: s=ap−b  (1) 0.46≦a≦0.58  (2) 3≦b≦13  (3) The exposure mask having the opening with the determined width is provided, and the exposure light is projected to the exposure mask to thereby expose the object to be exposed.
    • 使用具有开口小于来自曝光光源的光的波长的遮光膜的曝光掩模的近场曝光方法,并且通过在曝光开始时产生的近场光曝光物体 基于来自曝光光源的曝光光的掩模。 确定开口的宽度以满足下面的等式(1),(2)和(3),其中曝光掩模的开口的宽度由s(nm)表示,被曝光物体的处理间距 由p(nm)表示,系数由a和b表示:s = ap-b(1)0.46&nlE; a&nlE; 0.58(2)3&nlE; b&nlE; 13(3)曝光掩模具有确定的开口 提供宽度,并且曝光光被投射到曝光掩模,从而暴露待曝光的物体。