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1. 发明授权

US07790049B2 Production process of structure 失效
标题翻译：结构生产过程
公开(公告)号：US07790049B2
公开(公告)日：2010-09-07
申请号：US11843873
申请日：2007-08-23
申请人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
发明人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/02126 , C03C17/42 , C03C2218/33 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/02356 , H01L21/31144 , H01L21/3121 , H01L21/316
摘要： A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.
摘要翻译：制造含有氧化硅的结构体的方法包括在基材上形成第一层有机旋涂玻璃的步骤和在第一层上形成第二层无机旋涂玻璃的步骤。此后，通过使用形成在第二层上的图案作为掩模来蚀刻第一层，然后将第一层和第二层煅烧以制备含有氧化硅的结构。

2. 发明申请

US20100200544A1 PRODUCTION PROCESS OF STRUCTURE 审中-公开
标题翻译：生产过程结构
公开(公告)号：US20100200544A1
公开(公告)日：2010-08-12
申请号：US12767881
申请日：2010-04-27
申请人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
发明人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
IPC分类号： C03C15/00
CPC分类号： H01L21/02126 , C03C17/42 , C03C2218/33 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/02356 , H01L21/31144 , H01L21/3121 , H01L21/316
摘要： A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.
摘要翻译：制造含有氧化硅的结构的方法包括在基材上形成第一层有机旋涂玻璃的步骤和在第一层上形成第二层无机旋涂玻璃的步骤。此后，通过使用形成在第二层上的图案作为掩模来蚀刻第一层，然后将第一层和第二层煅烧以制备含有氧化硅的结构。

3. 发明申请

US20080047932A1 PRODUCTION PROCESS OF STRUCTURE 失效
标题翻译：生产过程结构
公开(公告)号：US20080047932A1
公开(公告)日：2008-02-28
申请号：US11843873
申请日：2007-08-23
申请人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
发明人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
IPC分类号： C03C15/00
CPC分类号： H01L21/02126 , C03C17/42 , C03C2218/33 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/02356 , H01L21/31144 , H01L21/3121 , H01L21/316
摘要： A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.
摘要翻译：制造含有氧化硅的结构的方法包括在基材上形成第一层有机旋涂玻璃的步骤和在第一层上形成第二层无机旋涂玻璃的步骤。此后，通过使用形成在第二层上的图案作为掩模来蚀刻第一层，然后将第一层和第二层煅烧以制备含有氧化硅的结构。

4. 发明授权

US08361336B2 Imprint method for imprinting a pattern of a mold onto a resin material of a substrate and related substrate processing method 有权
标题翻译：用于将模具图案压印到基板的树脂材料上的印刷方法和相关的基板处理方法
公开(公告)号：US08361336B2
公开(公告)日：2013-01-29
申请号：US12282454
申请日：2008-08-01
申请人： Shingo Okushima , Junichi Seki , Haruhito Ono , Nao Nakatsuji , Atsunori Terasaki
发明人： Shingo Okushima , Junichi Seki , Haruhito Ono , Nao Nakatsuji , Atsunori Terasaki
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B29C33/424 , B82Y10/00 , B82Y40/00
摘要： An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed.
摘要翻译：用于将模具图案压印在基板上的树脂材料上的压印方法。压印方法包括通过使模具与形成的树脂材料接触来形成其中形成与模具的图案相对应的压印图案的处理区域和由处理区域的周边形成的外部区域的步骤在基板上，使得一部分树脂材料从处理区域挤出到外部区域中，形成用于保护加工区域的保护层的步骤，以及在外部去除树脂材料层的步骤区域，而在处理区域中形成在树脂材料层上的印模图案被保护层保护，以便不被去除。

5. 发明授权

US08178026B2 Nanoimprinting method and mold for use in nanoimprinting 有权
标题翻译：用于纳米压印的纳米印刷方法和模具
公开(公告)号：US08178026B2
公开(公告)日：2012-05-15
申请号：US12405847
申请日：2009-03-17
申请人： Motoki Okinaka , Junichi Seki , Atsunori Terasaki , Shingo Okushima
发明人： Motoki Okinaka , Junichi Seki , Atsunori Terasaki , Shingo Okushima
IPC分类号： B29C35/08 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A nanoimprinting method includes: forming at a region for performing a first nanoimprinting process on a substrate, a first patterning region with a first affinity to resin; forming at a region for performing a second nanoimprinting process on the substrate, a second patterning region with a second affinity to resin, the second affinity being lower than the first affinity; applying the resin to the first patterning region and transferring a pattern of a mold to the resin by the first nanoimprinting process; and modifying the second patterning region to a region with affinity to resin that is higher than the second affinity, then applying the resin to the modified region, and performing the second nanoimprinting process to process the second patterning region thereby connecting patterns formed at the first patterning region and the second patterning region to each other.
摘要翻译：纳米压印方法包括：在用于在衬底上进行第一纳米压印过程的区域上形成第一图案化区域，其对树脂具有第一亲和力; 在用于在所述基板上进行第二纳米压印处理的区域上形成第二图案化区域，所述第二图案形成区域对树脂具有第二亲和力，所述第二亲和力低于所述第一亲和力; 将所述树脂施加到所述第一图案形成区域并通过所述第一纳米压印工艺将模具的图案转移到所述树脂; 并且将所述第二图案形成区域修饰为与所述第二亲和力高于树脂的区域，然后将所述树脂施加到所述改性区域，并进行所述第二纳米压印处理以处理所述第二图案化区域，从而将形成在所述第一图案形成区域和第二图案形成区域彼此。

6. 发明授权

US07981304B2 Process for producing a chip using a mold 有权
标题翻译：使用模具制造芯片的工艺
公开(公告)号：US07981304B2
公开(公告)日：2011-07-19
申请号：US12388179
申请日：2009-02-18
申请人： Atsunori Terasaki , Junichi Seki , Nobuhito Suehira , Hideki Ina , Shingo Okushima
发明人： Atsunori Terasaki , Junichi Seki , Nobuhito Suehira , Hideki Ina , Shingo Okushima
IPC分类号： C03C15/00
CPC分类号： B29C59/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F9/7042
摘要： A mold capable of a highly accurate alignment with a member to be processed in such a state that a photocurable resin material is disposed between the mold and the member to be processed, and is constituted by a substrate 2010 formed of a first material and an alignment mark 2102 formed of a second material different from the first material. The first material and the second material have transmissivities to light in a part of an ultraviolet wavelength range. The second material has a refractive index of not less than 1.7.
摘要翻译：该模具能够在将待固化的树脂材料设置在模具和待加工构件之间的状态下与要处理的构件高度准确地对准，并且由第一材料和对准构成的基板2010构成标记2102由与第一材料不同的第二材料形成。第一材料和第二材料在紫外线波长范围的一部分中具有透光性。第二种材料的折射率不小于1.7。

7. 发明授权

US07598172B2 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole 有权
标题翻译：通过使用双镶嵌工艺制造半导体器件的方法和用于制造具有连通孔的制品的方法
公开(公告)号：US07598172B2
公开(公告)日：2009-10-06
申请号：US12186468
申请日：2008-08-05
申请人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
发明人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76835 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76808 , H01L21/76817
摘要： A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film.
摘要翻译：提供一种制造半导体器件的方法，其中容易控制布线沟槽和通孔在深度方向上的长度。在基板上制备具有第一绝缘膜的部件，在上述第一绝缘膜上设置有层。具有图案的模具被印刷在上述层上，以形成具有布线沟槽和第一通孔的第二绝缘膜，该图案对应于布线沟槽和第一通孔。此后，通过使用上述第二绝缘膜作为掩模来蚀刻上述第一绝缘膜，以便在第一绝缘膜中形成连接到第一通孔的第二通孔。

8. 发明授权

US07510388B2 Mold, imprint method, and process for producing chip 有权
标题翻译：模具，压印方法和生产芯片的工艺
公开(公告)号：US07510388B2
公开(公告)日：2009-03-31
申请号：US11468876
申请日：2006-08-31
申请人： Atsunori Terasaki , Junichi Seki , Nobuhito Suehira , Hideki Ina , Shingo Okushima
发明人： Atsunori Terasaki , Junichi Seki , Nobuhito Suehira , Hideki Ina , Shingo Okushima
IPC分类号： B29C59/00
CPC分类号： B29C59/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F9/7042
摘要： A mold capable of effecting alignment of the mold and the member to be processed with high accuracy even in such a state that a photocurable resin material is disposed between the mold and the member to be processed is constituted by a substrate 2010 formed of a first material and an alignment mark 2102 formed of a second material different from the first material. The first material and the second material have transmittivities to light in a part of an ultraviolet wavelength range of the ultraviolet light. The second material has a refractive index of not less than 1.7.
摘要翻译：即使在光固化树脂材料配置在模具和待加工构件之间的状态下，能够高精度地进行模具和被处理部件的对准的模具由基板2010构成，基板2010由第一材料以及由不同于第一材料的第二材料形成的对准标记2102。第一材料和第二材料在紫外线的紫外线波长范围的一部分中具有透光性。第二种材料的折射率不小于1.7。

9. 发明申请

US20070128850A1 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole 有权
标题翻译：通过使用双镶嵌工艺制造半导体器件的方法和用于制造具有连通孔的制品的方法
公开(公告)号：US20070128850A1
公开(公告)日：2007-06-07
申请号：US11606874
申请日：2006-12-01
申请人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
发明人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76835 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76808 , H01L21/76817
摘要： A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film.
摘要翻译：提供一种制造半导体器件的方法，其中容易控制布线沟槽和通孔在深度方向上的长度。在基板上制备具有第一绝缘膜的部件，在上述第一绝缘膜上设置有层。具有图案的模具被印刷在上述层上，以形成具有布线沟槽和第一通孔的第二绝缘膜，该图案对应于布线沟槽和第一通孔。此后，通过使用上述第二绝缘膜作为掩模来蚀刻上述第一绝缘膜，以便在第一绝缘膜中形成连接到第一通孔的第二通孔。

10. 发明授权

US08770958B2 Pattern forming method and pattern forming apparatus in which a substrate and a mold are aligned in an in-plane direction 有权
标题翻译：图案形成方法和图案形成装置，其中基板和模具在面内方向上对齐
公开(公告)号：US08770958B2
公开(公告)日：2014-07-08
申请号：US12842118
申请日：2010-07-23
申请人： Nobuhito Suehira , Junichi Seki , Masao Majima , Atsunori Terasaki , Hideki Ina
发明人： Nobuhito Suehira , Junichi Seki , Masao Majima , Atsunori Terasaki , Hideki Ina
IPC分类号： B28B17/00
CPC分类号： G03F9/7084 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7076
摘要： A pattern forming method for forming an imprinted pattern on a coating material disposed on a substrate with a pattern provided to a mold. The method includes preparing a mold provided with a first surface including a pattern area, a second surface located opposite from the first surface, and an alignment mark provided at a position at which the alignment mark is away from the first surface, contacting the pattern area of the mold with the coating material disposed on the substrate, obtaining information about positions of the mold and the substrate by using the alignment mark and a mark provided to the substrate in a state in which the coating material is disposed on the substrate at a portion where the alignment mark and the substrate are opposite to each other, and effecting alignment of the substrate with the mold in an in-plane direction of the pattern area, on the basis of the information in a state in which the pattern area and the coating material contact each other.
摘要翻译：一种图案形成方法，用于在设置在模具上的图案的基板上的涂料上形成印刷图案。该方法包括制备模具，其具有包括图案区域的第一表面，与第一表面相对的第二表面和设置在对准标记远离第一表面的位置处的对准标记，的模具，其中涂覆材料设置在基板上，通过使用对准标记和设置在基板上的标记获得关于模具和基板的位置的信息，其中涂布材料设置在基板上的部分其中所述对准标记和所述基板彼此相对，并且基于所述图案区域和所述涂层的状态的信息，在所述图案区域的面内方向上进行所述基板与所述模具的对准材料相互接触。

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