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    • 5. 发明授权
    • Fluidic structure with nanopore array
    • 具有纳米孔阵列的流体结构
    • US09057719B2
    • 2015-06-16
    • US13771929
    • 2013-02-20
    • International Business Machines Corporation
    • Chengwen PeiZhengwen Li
    • B32B3/26G01N33/487B81C1/00C30B33/10
    • G01N33/48721B32B3/266B81B2201/058B81B2203/0384B81C1/00087C30B33/10Y10T428/249975
    • A method of fabricating a material having nanoscale pores is provided. In one embodiment, the method of fabricating a material having nanoscale pores may include providing a single crystal semiconductor. The single crystal semiconductor layer is then patterned to provide an array of exposed portions of the single crystal semiconductor layer having a width that is equal to the minimum lithographic dimension. The array of exposed portion of the single crystal semiconductor layer is then etched using an etch chemistry having a selectivity for a first crystal plane to a second crystal plane of 100% or greater. The etch process forms single or an array of trapezoid shaped pores, each of the trapezoid shaped pores having a base that with a second width that is less than the minimum lithographic dimension.
    • 提供了制造具有纳米尺度孔的材料的方法。 在一个实施例中,制造具有纳米尺度孔的材料的方法可以包括提供单晶半导体。 然后对单晶半导体层进行构图以提供具有等于最小光刻尺寸的宽度的单晶半导体层的暴露部分的阵列。 然后使用具有对第一晶面的选择性至100%或更大的第二晶体面的蚀刻化学品蚀刻单晶半导体层的暴露部分的阵列。 蚀刻工艺形成单个或一组梯形形孔,每个梯形孔具有基部,其具有小于最小光刻尺寸的第二宽度。