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41. 发明申请

US20060054854A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20060054854A1
公开(公告)日：2006-03-16
申请号：US11068970
申请日：2005-03-02
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： F16K3/00
CPC分类号： H01L21/67196 , F16K51/02 , H01L21/67126 , H01L21/6719
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel 509 having its inside decompressed, an opening 1201 disposed on a wall of the vacuum vessel for communicating the inside with the outside and through which a sample to be processed is taken in and out, a valve body 1001 disposed outside the wall for airtightly sealing or opening the opening 1201, a seal member 1002 disposed on the side of the valve body that comes into contact with the wall surrounding the opening for sealing the inside of the opening by being in contact with the wall and the valve body 1001 when the valve body seals the opening 1201, a first projection having a projected curved surface that comes into contact with the wall, and an overhang extending from this projection which is engaged with and attached to the inside of the valve body 1001, which constitute the seal member, and a cover 1003 disposed on the side of the valve body 1001 that comes into contact with the wall for pressing at least a portion of the overhang onto the valve body and determining the position thereof.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器509，设置在真空容器的壁上的开口1201，用于将内部与外部连通并且待处理样品通过其吸入和排出;阀体1001 设置在壁外侧用于气密地密封或打开开口1201;密封构件1002，其设置在阀体的与围绕开口的壁相接触的侧面上，用于通过与壁接触来密封开口的内部; 当阀体密封开口1201时的阀体1001，具有与壁接触的突出弯曲表面的第一突出部和从该突起延伸的突出部，该突出部与阀体1001的内部接合并附接构成密封构件的盖体1003，以及设置在阀体1001的与壁接触的一侧的盖1003，用于将t的至少一部分按压他突出到阀体上并确定其位置。

42. 发明申请

US20060027324A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060027324A1
公开(公告)日：2006-02-09
申请号：US11068805
申请日：2005-03-02
申请人： Akitaka Makino , Koichi Mishima , Takashi Kaneko , Toyoharu Okumoto
发明人： Akitaka Makino , Koichi Mishima , Takashi Kaneko , Toyoharu Okumoto
IPC分类号： H01L21/306 , G01L21/30
CPC分类号： H01L21/67253 , G01N21/68 , H01J37/32935 , H01J37/32972
摘要： The present invention provides a plasma processing apparatus that can accomplish fine and precise processing of a sample over a wide area of the surface thereof. A plasma processing apparatus 100 has a processing chamber 101, a sample stage 102 that is supplied with different amounts of coolants at the middle part and the circumference part thereof, and a shower plate 109 that is supplied with different amounts of gases at the middle part and the circumference part thereof. The plasma processing apparatus 100 further has a light-receiving section 125 that receives plasma light emission in the processing chamber 101, a light emission spectrometer 124, a mass spectrometer 129 that analyzes the mass of a gas in a lower space of the processing chamber and a control device 130 and controls flow controllers 120, 121 for controlling the flow rates of the gases supplied into the processing chamber and a coolant flow controller 131 for controlling the flow rates of the coolants supplied to the sample stage 102 using both the data about the light emission analysis and the mass analysis.
摘要翻译：本发明提供一种等离子体处理装置，其能够在其表面的广泛区域上实现样品的精细和精确的处理。等离子体处理装置100具有处理室101，在其中间部分和周围部分处供应不同量的冷却剂的样品台102和在中间部分供应不同量的气体的喷淋板109 及其圆周部分。等离子体处理装置100还具有接收处理室101内的等离子体发光的光接收部125，发光光谱仪124，分析处理室下部空间的气体质量的质谱仪129和控制装置130，并且控制流量控制器120,121，用于控制供应到处理室中的气体的流量;以及冷却剂流量控制器131，用于控制供应给样品台102的冷却剂的流量，光散射分析和质量分析。

43. 发明申请

US20050193953A1 Plasma processing apparatus 有权
公开(公告)号：US20050193953A1
公开(公告)日：2005-09-08
申请号：US10929439
申请日：2004-08-31
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/3065 , C23C16/00 , H01L21/02
CPC分类号： H01L21/6719 , H01J37/32513 , H01J37/32522 , H01J37/32807 , H01J37/32816 , H01J37/32908 , Y10S156/916
摘要： The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof. The vacuum processing apparatus further includes a connector portion which is mounted on the bed portion in a state that the connector portion faces a lower portion of the transport chamber, wherein the bed portion is configured to be detachably mounted on the vacuum processing apparatus in a state that the bed portion performs the connection and the disconnection at the connector portion.

44. 发明申请

US20050051093A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20050051093A1
公开(公告)日：2005-03-10
申请号：US10812087
申请日：2004-03-30
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.
摘要翻译：真空处理装置包括具有用于支撑待处理物体的处理台和使用气体进行处理的真空处理室。真空处理室具有轴对称结构，包括双壁结构，以及用于密封物体进入处理室的开口的闸阀。

45. 发明申请

US20050051092A1 Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20050051092A1
公开(公告)日：2005-03-10
申请号：US10812086
申请日：2004-03-30
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.
摘要翻译：一种真空处理装置，包括传送室，其内部传送有待处理的物体晶片，以及设置在传送室外部并以可拆卸的方式附接到传送室的两个处理室。每个处理室的内部被减压以便使用从供给的处理气体产生的等离子体处理放置在其中的晶片，并且两个供应单元分别将处理气体供应到两个处理室。两个供应单元垂直设置在传送室外部和两个处理室之间。

46. 发明申请

US20050051091A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20050051091A1
公开(公告)日：2005-03-10
申请号：US10656334
申请日：2003-09-08
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus comprising a transfer unit 112 disposed at a center thereof, plural processing chambers 103, 104, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit 107 interposed between two processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元112，多个处理室103,104，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理; 以及插入在用于向所述室供给气体的两个处理室之间的质量流量控制器单元107。

47. 发明授权

US08740011B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08740011B2
公开(公告)日：2014-06-03
申请号：US13282561
申请日：2011-10-27
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D53/02 , B65D43/04
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： A vacuum processing apparatus that includes a vacuum vessel; an opening disposed in a wall of the vacuum vessel, through which a sample to be processed is taken in and out; a valve body disposed outside the wall for airtightly sealing the opening; and a drive unit driving the valve body to carry out a sealing or opening operation. The drive unit includes a first member coupled to an actuator that moves along a substantially linear first direction as a result of operation of the actuator, and a second member coupled to the first member that moves along a substantially linear second direction that intersects with the first direction. The valve body, coupled to the second member, seals the opening as a result of movement of the second member.
摘要翻译：一种包括真空容器的真空处理装置; 设置在真空容器的壁中的开口，待处理的样品通过该开口被取出; 阀体，其设置在所述壁的外侧，用于气密地密封所述开口; 以及驱动单元驱动阀体进行密封或打开操作。所述驱动单元包括联接到致动器的第一构件，所述致动器由于所述致动器的操作而沿着基本线性的第一方向移动，以及联接到所述第一构件的第二构件，所述第二构件沿着与所述第一构件相交的基本上线性的第二方向移动方向。联接到第二构件的阀体由于第二构件的移动而密封开口。

48. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

49. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

50. 发明授权

US07828928B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07828928B2
公开(公告)日：2010-11-09
申请号：US12199876
申请日：2008-08-28
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.
摘要翻译：一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

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