专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20060264060A1 Low temperature plasma deposition process for carbon layer deposition 失效
标题翻译：用于碳层沉积的低温等离子体沉积工艺
公开(公告)号：US20060264060A1
公开(公告)日：2006-11-23
申请号：US11131941
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

42. 发明申请

US20060260545A1 Low temperature absorption layer deposition and high speed optical annealing system 审中-公开
标题翻译：低温吸收层沉积和高速光学退火系统
公开(公告)号：US20060260545A1
公开(公告)日：2006-11-23
申请号：US11131900
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/507 , C23C16/26 , C23C16/56 , H01J37/32082 , H01L21/3146 , H01L21/67115 , H01L21/67207
摘要： An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.
摘要翻译：一种用于处理半导体晶片的集成系统包括用于沉积吸热层的环形源等离子体反应器，所述反应器包括晶片支架，反应室，与其大致相对的侧面上的所述室耦合的外部折入环形导管，RF源用于将功率耦合到所述外部折返导管的一部分的电源施加器和包含吸热材料前体气体的处理气体源。集成系统还包括光学退火室。

43. 发明申请

US20060238953A1 Electrostatic chuck with smart lift-pin mechanism for a plasma reactor 有权
标题翻译：用于等离子体反应器的具有智能举升机构的静电卡盘
公开(公告)号：US20060238953A1
公开(公告)日：2006-10-26
申请号：US11115951
申请日：2005-04-26
申请人： Hiroji Hanawa , Andrew Nguyen , Kenneth Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
发明人： Hiroji Hanawa , Andrew Nguyen , Kenneth Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
IPC分类号： H01T23/00
CPC分类号： H01L21/68742 , H01L21/6831
摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.
摘要翻译：用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。升降台面向销的底端，并可在与升降方向大致平行的方向上平移。小力检测器感测由提升销施加的力足够大以指示夹紧晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内晶圆。

44. 发明申请

US20050214477A1 Chemical vapor deposition plasma process using an ion shower grid 有权
标题翻译：使用离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US20050214477A1
公开(公告)日：2005-09-29
申请号：US10873485
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C16/00 , C23C16/40 , C23C16/452 , C23C16/517
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.
摘要翻译：在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口离子淋浴网格的表面。工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力发生区域至少是过程区域压力的几倍。通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格以从等离子体中产生离子通过网格并进入过程区域。

45. 发明申请

US20050211546A1 Reactive sputter deposition plasma process using an ion shower grid 审中-公开
标题翻译：使用离子淋浴网格的反应溅射沉积等离子体工艺
公开(公告)号：US20050211546A1
公开(公告)日：2005-09-29
申请号：US10873602
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C14/34 , C23C14/35 , C23C16/04 , C23C16/507 , H01J37/32
CPC分类号： C23C14/358 , C23C16/045 , C23C16/507 , H01J37/32357 , H01J37/32449
摘要： A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.
摘要翻译：反应性溅射沉积工艺在具有将腔室分成上离子产生区域和较低工艺区域的离子喷淋栅格的反应室中进行，离子喷淋栅格具有相对于离子淋浴网格的表面。工件被放置在处理区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以便从沉淀前体物质溅射出靶，产生栅电位到离子淋浴网格以产生通过栅格的离子通量，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

46. 发明申请

US20050133166A1 Tuned potential pedestal for mask etch processing apparatus 审中-公开
标题翻译：用于掩模蚀刻处理装置的调谐电位基座
公开(公告)号：US20050133166A1
公开(公告)日：2005-06-23
申请号：US10782300
申请日：2004-02-18
申请人： Peter Satitpunwaycha , Khiem Nguyen , Alfred Mak , Kenneth Collins , Turgut Sahin
发明人： Peter Satitpunwaycha , Khiem Nguyen , Alfred Mak , Kenneth Collins , Turgut Sahin
IPC分类号： C23C16/458 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/321 , H01J2237/2001 , H01L21/67069 , H01L21/68785
摘要： The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.
摘要翻译：本发明通常提供一种用于支撑基底的改进的基座。基座在等离子体蚀刻过程中具有最大的应用，例如石英光掩模或“掩模版”。基座限定主体，以及沿着主体的上表面的基板支撑基座。基板支撑基座具有外边缘，以及用于接收和支撑基板的中间基板支撑脊。中间基板支撑脊外侧的基板支撑基座的至少一部分由电介质材料制成。目的是通过光罩耦合更大的RF功率，以增强等离子体蚀刻工艺。

47. 发明申请

US20050051272A1 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电感耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US20050051272A1
公开(公告)日：2005-03-10
申请号：US10646467
申请日：2003-08-22
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域，以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

48. 发明授权

US06514376B1 Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
标题翻译：具有架空螺线管天线的电感耦合射频等离子体反应器的热控制装置
公开(公告)号：US06514376B1
公开(公告)日：2003-02-04
申请号：US09520623
申请日：2000-03-07
申请人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
发明人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
IPC分类号： C23C1600
CPC分类号： C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.
摘要翻译：本发明体现在等离子体反应器中，该等离子体反应器包括等离子体反应器室和工件支撑件，用于在加工期间将工件保持在室内的支撑平面附近，该室具有面向支撑件的反应器外壳部分，覆盖反应器外壳部分的冷体，反应器外壳部分和冷体之间的等离子体源功率施加器和在冷体和反应器外壳之间并与其接触的导热体。热导体和冷却槽在它们之间限定冷沉接口，反应器优选地还包括在冷沉接口内的导热物质，以降低冷接口接口上的热阻。导热物质可以是填充冷体界面的导热气体。或者，导热物质可以是导热固体材料。反应器可以包括在冷体中的气体歧管，其与导热气体源连通，通过来自气体歧管的冷体和通向冷体界面的入口。反应器还可以包括夹在冷体和热导体之间的O形环装置，并且在与冷体的入口连通的几乎无穷小的厚度的冷体界面中限定含气体体积。更一般地，反应器可以包括促进热和/或冷沉之间的界面和暴露于反应室内部大气的任何部分（例如天花板，壁或聚合物硬化前体环）之间的热传递，例如，通过插入该导热气体或物质的界面。

49. 发明授权

US06454898B1 Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners 失效
标题翻译：电感耦合RF等离子体反应器，具有架空螺线管天线和模块化限制磁铁衬垫
公开(公告)号：US06454898B1
公开(公告)日：2002-09-24
申请号：US09482261
申请日：2000-01-11
申请人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
发明人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
IPC分类号： C23C1434
CPC分类号： H01J37/32522 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.
摘要翻译：根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体限制磁体在壳体内。其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。优选地，第一和第二模块位于通道的相对侧上。此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。优选地，模块壳体包括诸如铝的相对非磁性的热导体，并且与所述室主体热接触。冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。此外，通道可以是晶片狭缝阀或气体进料口。这种气体进料口可以是通过室的天花板的中心气体进料。模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

50. 发明授权

US6036878A Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna 失效
公开(公告)号：US6036878A
公开(公告)日：2000-03-14
申请号：US023365
申请日：1998-02-13
申请人： Kenneth Collins
发明人： Kenneth Collins
IPC分类号： H01J37/32 , H01L21/683 , H05H1/00 , H01L21/00
CPC分类号： H01L21/6831 , H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522
摘要： The present invention is embodied in a method of operating an inductively coupled plasma reactor for processing a semiconductor wafer, the reactor including a vacuum chamber for containing the wafer, a process gas source, a semiconductor window electrode facing an interior portion of the chamber, an inductive power radiator on an exterior side of the semiconductor window electrode, the inductive field having a skin depth generally decreasing with the frequency of the RF inductive field and with the density of the plasma in the chamber and generally increasing with the pressure inside the vacuum chamber, the inductive coupling of the RF field tending to approach extinguishment as the skin depth approaches the spacing between the wafer and the window electrode, a method for maintaining an intermediate plasma density inside the chamber without extinguishing the inductive coupling of the RF field, the method including operating the reactor at a selected flow rate of the process gas, a selected chamber pressure and a selected plasma source power level corresponding to the reduced plasma density, and maintaining the frequency of the RF field at least at a level sufficient to limit the skin depth to a depth less than the electrode-to-wafer spacing, whereby to maintain the inductive coupling of the RF field.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式