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41. 发明申请

US20130089984A1 SIDEWALL IMAGE TRANSFER PROCESS WITH MULTIPLE CRITICAL DIMENSIONS 有权
标题翻译：具有多重关键尺寸的边框图像传输过程
公开(公告)号：US20130089984A1
公开(公告)日：2013-04-11
申请号：US13267198
申请日：2011-10-06
申请人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H. Gabor , Sean D. Burns , Erin Catherine Mclellan
发明人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H. Gabor , Sean D. Burns , Erin Catherine Mclellan
IPC分类号： H01L21/311
CPC分类号： H01L21/0338 , H01L21/0337
摘要： Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.
摘要翻译：本发明的实施例提供了一种在具有多个关键尺寸的侧壁图像转印工艺中形成半导体器件的方法。该方法包括在多个心轴上形成多层介质层，多层介质层具有覆盖多个心轴的多个区域，多层介质层的多个区域具有不同的厚度; 通过施加定向蚀刻工艺将多层电介质层的多个区域蚀刻成间隔物，间隔物形成在多个心轴的侧壁旁边，并且具有对应于多个区域的多个区域的不同厚度的不同宽度电介质层; 去除间隔件之间的多个心轴; 并将间隔物的底部图像转移到间隔物下面的一个或多个层中。

42. 发明申请

US20130041494A1 ALIGNMENT DATA BASED PROCESS CONTROL SYSTEM 有权
标题翻译：基于对准数据的过程控制系统
公开(公告)号：US20130041494A1
公开(公告)日：2013-02-14
申请号：US13204955
申请日：2011-08-08
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
IPC分类号： G06F19/00
CPC分类号： G05B19/401 , G05B2219/2602 , G05B2219/45031
摘要： Deformation of a substrate due to one or more processing steps is determined by measuring substrate alignment data at lithographic processing steps before and after the one or more processing steps. Any abnormal pattern in the alignment data differential is identified by comparing the calculated alignment data differential with previous data accumulated in a database. By comparing the abnormal pattern with previously identified tool-specific patterns for alignment data differential, a processing step that introduces the abnormal pattern and/or the nature of the abnormal processing can be identified, and appropriate process control measures can be taken to rectify any anomaly in the identified processing step.
摘要翻译：通过在一个或多个处理步骤之前和之后的光刻处理步骤中测量衬底对准数据来确定由于一个或多个处理步骤导致的衬底的变形。通过将计算的对准数据差异与在数据库中累积的先前数据进行比较来识别对准数据差异中的任何异常模式。通过将异常模式与先前识别的针对对准数据差异的工具特定模式进行比较，可以识别引入异常模式和/或异常处理性质的处理步骤，并且可以采取适当的过程控制措施来纠正任何异常在所识别的处理步骤中。

43. 发明授权

US07968270B2 Process of making a semiconductor device using multiple antireflective materials 有权
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US07968270B2
公开(公告)日：2011-06-28
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/11 , G03F7/40
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

44. 发明授权

US07914975B2 Multiple exposure lithography method incorporating intermediate layer patterning 失效
标题翻译：结合中间层图案的多次曝光光刻方法
公开(公告)号：US07914975B2
公开(公告)日：2011-03-29
申请号：US11733412
申请日：2007-04-10
申请人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
发明人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
IPC分类号： G03F7/26
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an organic underlayer, both the first and second sets of patterned features, wherein the first and second sets of patterned features are combined into a composite set of patterned features that are transferable into the substrate by using the organic underlayer as a mask.
摘要翻译：图案化半导体衬底的方法包括在第一无机层中形成第一组图案化特征; 在所述第一无机层和第二无机层之一中产生第二组图案特征; 以及将第一组和第二组图案特征转移到有机底层中，其中第一组和第二组图案化特征被组合成通过使用有机底层作为掩模可转移到衬底中的图案化特征的复合组合。

45. 发明申请

US20090284722A1 METHOD FOR MONITORING FOCUS ON AN INTEGRATED WAFER 有权
标题翻译：用于监测聚合波的聚焦方法
公开(公告)号：US20090284722A1
公开(公告)日：2009-11-19
申请号：US12122929
申请日：2008-05-19
申请人： Allen H. Gabor , Wai-Kin Li
发明人： Allen H. Gabor , Wai-Kin Li
IPC分类号： G03B27/42 , G06K9/00
CPC分类号： G03F7/70333 , G03F7/70508 , G03F7/70641
摘要： A method and apparatus are provided for improving the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention is particularly useful for step-and-scan system and the CD of two features in each exposure field are measured in fields exposed at varying focus to form at least two Bossung curves. Exposure focus instructions are calculated based on the intersection point of the curves and the wafer is then scanned and imaged based on the calculated exposure focus instructions. In another aspect of the invention, when multiple wafers are being processed operational variances may cause a drift in the focus. The focus drift can be easily corrected by measuring the critical dimension of each of the features and comparing the difference to determine if any focus offset is needed to return the focus to the original calculated focus value.
摘要翻译：提供了一种用于在半导体制造工艺的光刻成像过程期间改善诸如晶片之类的衬底的聚焦的方法和装置。本发明对于步进扫描系统特别有用，并且每个曝光场中的两个特征的CD在以不同焦点曝光的场中测量以形成至少两个Bossung曲线。基于曲线的交点，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像，计算曝光对焦指令。在本发明的另一方面，当正在处理多个晶片时，操作方差可能导致焦点漂移。可以通过测量每个特征的临界尺寸并比较差异来确定是否需要任何聚焦偏移以将焦点返回到原始计算的聚焦值，从而容易地校正聚焦漂移。

46. 发明申请

US20090081563A1 Integrated Circuits and Methods of Design and Manufacture Thereof 有权
标题翻译：集成电路及其设计和制造方法
公开(公告)号：US20090081563A1
公开(公告)日：2009-03-26
申请号：US12126741
申请日：2008-05-23
申请人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
发明人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
IPC分类号： G03F1/14 , G03F7/26
CPC分类号： H01L21/32139 , G03F1/36 , G03F1/70 , H01L21/0274 , H01L21/28123 , H01L21/823437 , Y10S438/942
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes depositing a gate material over a semiconductor substrate, and depositing a first resist layer over the gate material. A first mask is used to pattern the first resist layer to form first and second resist features. The first resist features include pattern for gate lines of the semiconductor device and the second resist features include printing assist features. A second mask is used to form a resist template; the second mask removes the second resist features.
摘要翻译：公开了集成电路及其制造和设计方法。例如，制造方法包括在半导体衬底上沉积栅极材料，并且在栅极材料上沉积第一抗蚀剂层。使用第一掩模来图案化第一抗蚀剂层以形成第一和第二抗蚀剂特征。第一抗蚀剂特征包括半导体器件的栅极线的图案，第二抗蚀剂特征包括印刷辅助特征。使用第二掩模形成抗蚀剂模板; 第二掩模移除第二抗蚀剂特征。

47. 发明申请

US20090068837A1 LINE ENDS FORMING 有权
标题翻译：线端形成
公开(公告)号：US20090068837A1
公开(公告)日：2009-03-12
申请号：US11853353
申请日：2007-09-11
申请人： Matthew E. Colburn , Allen H. Gabor , Scott D. Halle , Donald J. Samuels
发明人： Matthew E. Colburn , Allen H. Gabor , Scott D. Halle , Donald J. Samuels
IPC分类号： H01L21/44
CPC分类号： G11C11/412 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/115
摘要： Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.
摘要翻译：公开了形成线端的方法和包括线端的相关存储单元。在一个实施例中，该方法包括通过空间形成与第一器件元件分离的第一器件元件和第二器件元件; 以及形成从所述第一装置元件延伸的第一线，所述第一线包括在所述空间上并与所述第一装置元件间隔开的球形线端，以及从所述第二装置元件延伸的第二线，所述第二线包括球根线端并且与第二设备元件分开。

48. 发明申请

US20090061355A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20090061355A1
公开(公告)日：2009-03-05
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , C08G77/04 , G03F7/20 , B32B27/00
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

49. 发明申请

US20080311508A1 PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用多种抗反射材料制备半导体器件的工艺
公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/20 , C23C16/00 , G03C1/735 , G03C1/73
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

50. 发明授权

US07001693B2 Binary OPC for assist feature layout optimization 失效
公开(公告)号：US07001693B2
公开(公告)日：2006-02-21
申请号：US10378575
申请日：2003-02-28
申请人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
发明人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.

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