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1. 发明授权

US08716133B2 Three photomask sidewall image transfer method 失效
标题翻译：三光掩模侧壁图像传输方法
公开(公告)号：US08716133B2
公开(公告)日：2014-05-06
申请号：US13592683
申请日：2012-08-23
申请人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
发明人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
摘要翻译：三个光掩模图像传输方法。该方法包括使用第一光掩模，在衬底上的硬掩模层上限定一组心轴; 在所述心轴的侧壁上形成侧壁间隔件，所述侧壁间隔物间隔开; 去除一组心轴; 使用第二光掩模，去除侧壁间隔物的区域，形成修剪的侧壁间隔物并限定第一特征的图案; 在修剪的侧壁间隔物和未被修剪的侧壁间隔物覆盖的硬掩模层上形成图案转移层; 使用第三光掩模，限定所述转移层中的第二特征的图案，所述第二特征中的至少一个邻接所述第一特征图案的至少一个特征; 同时将第一特征的图案和第二特征的图案转移到硬掩模层中，从而形成图案化的硬掩模层。

2. 发明申请

US20140024219A1 IMAGE TRANSFER PROCESS EMPLOYING A HARD MASK LAYER 失效
公开(公告)号：US20140024219A1
公开(公告)日：2014-01-23
申请号：US13552992
申请日：2012-07-19
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： H01L21/306
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10T428/24802
摘要： At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.

3. 发明申请

US20140057436A1 THREE PHOTOMASK SIDEWALL IMAGE TRANSFER METHOD 失效
标题翻译：三光子图像传输方法
公开(公告)号：US20140057436A1
公开(公告)日：2014-02-27
申请号：US13592683
申请日：2012-08-23
申请人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
发明人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
IPC分类号： H01L21/768
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
摘要翻译：三个光掩模图像传输方法。该方法包括使用第一光掩模，在衬底上的硬掩模层上限定一组心轴; 在所述心轴的侧壁上形成侧壁间隔件，所述侧壁间隔物间隔开; 去除一组心轴; 使用第二光掩模，去除侧壁间隔物的区域，形成修剪的侧壁间隔物并限定第一特征的图案; 在修剪的侧壁间隔物和未被修剪的侧壁间隔物覆盖的硬掩模层上形成图案转移层; 使用第三光掩模，限定所述转移层中的第二特征的图案，所述第二特征中的至少一个邻接所述第一特征图案的至少一个特征; 同时将第一特征的图案和第二特征的图案转移到硬掩模层中，从而形成图案化的硬掩模层。

4. 发明授权

US08637406B1 Image transfer process employing a hard mask layer 失效
标题翻译：使用硬掩模层的图像转印过程
公开(公告)号：US08637406B1
公开(公告)日：2014-01-28
申请号：US13552992
申请日：2012-07-19
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： H01L21/311
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10T428/24802
摘要： At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.
摘要翻译：在衬底上形成的至少一个掩模层包括电介质材料和金属材料中的至少一种。通过在所述至少一个掩模层之一中形成第一图案，形成包括所述第一图案的图案化掩模层。在所述图案化掩模层上形成包括包括至少一个阻挡区域的第二图案的覆盖结构。除去不在所述阻挡区域下面的所述图案化掩模层的部分被去除。图案化掩模层的其余部分包括作为第一图案和第二图案的交叉的复合图案。图案化掩模层包括电介质材料或金属材料，因此能够将高保真图案转移到下面的材料层中。

5. 发明授权

US08735296B2 Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer 有权
标题翻译：使用侧壁转移同时形成具有不同临界尺寸的多个结构的方法
公开(公告)号：US08735296B2
公开(公告)日：2014-05-27
申请号：US13552035
申请日：2012-07-18
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy
IPC分类号： H01L21/311
CPC分类号： H01L21/28132 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L21/76224 , H01L21/823456 , H01L29/66575 , H01L29/78
摘要： A method of forming multiple different width dimension features simultaneously. The method includes forming multiple sidewall spacers of different widths formed from different combinations of conformal layers on different mandrels, removing the mandrels, and simultaneously transferring the pattern of the different sidewall spacers into an underlying layer.
摘要翻译：同时形成多个不同宽度尺寸特征的方法。该方法包括形成由不同心轴上的适形层的不同组合形成的不同宽度的多个侧壁间隔物，去除心轴，以及同时将不同侧壁间隔物的图案转移到下面的层中。

6. 发明申请

US20130089984A1 SIDEWALL IMAGE TRANSFER PROCESS WITH MULTIPLE CRITICAL DIMENSIONS 有权
标题翻译：具有多重关键尺寸的边框图像传输过程
公开(公告)号：US20130089984A1
公开(公告)日：2013-04-11
申请号：US13267198
申请日：2011-10-06
申请人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H. Gabor , Sean D. Burns , Erin Catherine Mclellan
发明人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H. Gabor , Sean D. Burns , Erin Catherine Mclellan
IPC分类号： H01L21/311
CPC分类号： H01L21/0338 , H01L21/0337
摘要： Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.
摘要翻译：本发明的实施例提供了一种在具有多个关键尺寸的侧壁图像转印工艺中形成半导体器件的方法。该方法包括在多个心轴上形成多层介质层，多层介质层具有覆盖多个心轴的多个区域，多层介质层的多个区域具有不同的厚度; 通过施加定向蚀刻工艺将多层电介质层的多个区域蚀刻成间隔物，间隔物形成在多个心轴的侧壁旁边，并且具有对应于多个区域的多个区域的不同厚度的不同宽度电介质层; 去除间隔件之间的多个心轴; 并将间隔物的底部图像转移到间隔物下面的一个或多个层中。

7. 发明授权

US08673165B2 Sidewall image transfer process with multiple critical dimensions 有权
标题翻译：具有多个关键尺寸的侧壁图像传输过程
公开(公告)号：US08673165B2
公开(公告)日：2014-03-18
申请号：US13267198
申请日：2011-10-06
申请人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H Gabor , Sean D. Burns , Erin Catherine McLellan
发明人： Sudharshanan Raghunathan , Sivananda Kanakasabapathy , Ryan O. Jung , Allen H Gabor , Sean D. Burns , Erin Catherine McLellan
IPC分类号： H01L21/311
CPC分类号： H01L21/0338 , H01L21/0337
摘要： Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.
摘要翻译：本发明的实施例提供了一种在具有多个关键尺寸的侧壁图像转印工艺中形成半导体器件的方法。该方法包括在多个心轴上形成多层介质层，多层介质层具有覆盖多个心轴的多个区域，多层介质层的多个区域具有不同的厚度; 通过施加定向蚀刻工艺将多层电介质层的多个区域蚀刻成间隔物，间隔物形成在多个心轴的侧壁旁边，并且具有对应于多个区域的多个区域的不同厚度的不同宽度电介质层; 去除间隔件之间的多个心轴; 并将间隔物的底部图像转移到间隔物下面的一个或多个层中。

8. 发明申请

US20140024209A1 METHOD OF SIMULTANEOUSLY FORMING MULTIPLE STRUCTURES HAVING DIFFERENT CRITICAL DIMENSIONS USING SIDEWALL TRANSFER 有权
标题翻译：同时形成具有不同关键尺寸的多个结构的方法
公开(公告)号：US20140024209A1
公开(公告)日：2014-01-23
申请号：US13552035
申请日：2012-07-18
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy
IPC分类号： H01L21/28
CPC分类号： H01L21/28132 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L21/76224 , H01L21/823456 , H01L29/66575 , H01L29/78
摘要： A method of forming multiple different width dimension features simultaneously. The method includes forming multiple sidewall spacers of different widths formed from different combinations of conformal layers on different mandrels, removing the mandrels, and simultaneously transferring the pattern of the different sidewall spacers into an underlying layer.
摘要翻译：同时形成多个不同宽度尺寸特征的方法。该方法包括形成由不同心轴上的适形层的不同组合形成的不同宽度的多个侧壁间隔物，去除心轴，以及同时将不同侧壁间隔物的图案转移到下面的层中。

9. 发明申请

US20140023834A1 IMAGE TRANSFER PROCESS EMPLOYING A HARD MASK LAYER 审中-公开
标题翻译：使用硬掩模层的图像传输过程
公开(公告)号：US20140023834A1
公开(公告)日：2014-01-23
申请号：US13571496
申请日：2012-08-10
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： B32B3/10
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10T428/24802
摘要： At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.
摘要翻译：在衬底上形成的至少一个掩模层包括电介质材料和金属材料中的至少一种。通过在所述至少一个掩模层之一中形成第一图案，形成包括所述第一图案的图案化掩模层。在所述图案化掩模层上形成包括包括至少一个阻挡区域的第二图案的覆盖结构。除去不在所述阻挡区域下面的所述图案化掩模层的部分被去除。图案化掩模层的其余部分包括作为第一图案和第二图案的交叉的复合图案。图案化掩模层包括电介质材料或金属材料，因此能够将高保真图案转移到下面的材料层中。

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