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41. 发明授权

US08183074B2 Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly 失效
标题翻译：发光元件，制造发光元件的方法，发光元件组件以及发光元件组件的制造方法
公开(公告)号：US08183074B2
公开(公告)日：2012-05-22
申请号：US12013748
申请日：2008-01-14
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01L21/479
CPC分类号： H01S5/18311 , H01L33/145 , H01S5/18338
摘要： A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.
摘要翻译：制造发光元件的方法包括以下步骤：（A）在基板上依次形成具有第一导电类型，有源层和第二导电类型的第二化合物半导体层的第一化合物半导体层，（B）在位于设置有电流限制区域的区域外的第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部，（C）通过使一部分所述第二化合物半导体层从所述孔部分的侧壁进行绝缘处理，以便产生由所述第二化合物半导体层中的所述绝缘区围绕的所述电流限制区域。

42. 发明申请

US20120009704A1 Vertical cavity surface emitting laser and method of manufacturing thereof 审中-公开
标题翻译：垂直腔面发射激光器及其制造方法
公开(公告)号：US20120009704A1
公开(公告)日：2012-01-12
申请号：US13137851
申请日：2011-09-19
申请人： Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
IPC分类号： H01L33/60
CPC分类号： H01S5/18344 , H01S5/06226 , H01S5/18311 , H01S5/1835
摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.
摘要翻译：提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形第二多层反射器的截面积。

43. 发明申请

US20120002696A1 ALIGNMENT METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER AND LIGHT OUTPUT DEVICE 有权
标题翻译：半导体光放大器和光输出装置的对准方法
公开(公告)号：US20120002696A1
公开(公告)日：2012-01-05
申请号：US13163251
申请日：2011-06-17
申请人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/026
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译：提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。

44. 发明授权

US08022424B2 Semiconductor device and method of manufacturing it 有权
公开(公告)号：US08022424B2
公开(公告)日：2011-09-20
申请号：US11806884
申请日：2007-06-05
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号： H01L33/14
CPC分类号： H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

45. 发明申请

US20090001386A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090001386A1
公开(公告)日：2009-01-01
申请号：US12081354
申请日：2008-04-15
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18375
摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.
摘要翻译：本发明提供一种半导体装置，其能够实现在使元件彼此粘合时减少诸如裂纹的缺陷的发生。半导体器件包括彼此粘附的第一元件和第二元件。第一元件和第二元件中的至少一个元件在面向第一元件和第二元件中的另一元件的一侧具有压力松弛层，并且压力松弛层包括具有突起/凹部的半导体部件，该突起/凹部包括朝向另一元件突出的突起以及填充在突起/凹部中的凹部中的树脂部件。

46. 发明申请

US20080232414A1 LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ASSEMBLY, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT ASSEMBLY 失效
标题翻译：发光元件，制造发光元件的方法，发光元件组件以及制造发光元件组件的方法
公开(公告)号：US20080232414A1
公开(公告)日：2008-09-25
申请号：US12013748
申请日：2008-01-14
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/18311 , H01L33/145 , H01S5/18338
摘要： A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.
摘要翻译：制造发光元件的方法包括以下步骤：（A）在基板上依次形成具有第一导电类型，有源层和第二导电类型的第二化合物半导体层的第一化合物半导体层，（B）在位于设置有电流限制区域的区域外的第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部，（C）通过使一部分所述第二化合物半导体层从所述孔部分的侧壁进行绝缘处理，以便产生由所述第二化合物半导体层中的所述绝缘区围绕的所述电流限制区域。

47. 发明授权

US08792160B2 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08792160B2
公开(公告)日：2014-07-29
申请号：US13614646
申请日：2012-09-13
申请人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
发明人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.
摘要翻译：提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c）第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。第一化合物半导体层的厚度大于0.6μm。在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

48. 发明授权

US08786941B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08786941B2
公开(公告)日：2014-07-22
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

49. 发明授权

US08514905B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08514905B2
公开(公告)日：2013-08-20
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入到有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前变窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

50. 发明申请

US20120201259A1 SUBMOUNT, SUBMOUNT ASSEMBLY, AND SUBMOUNT ASSEMBLING METHOD 有权
标题翻译： SUBMOUNT，SUBMOUNT ASSEMBLY和SUBMOUNT组装方法
公开(公告)号：US20120201259A1
公开(公告)日：2012-08-09
申请号：US13364957
申请日：2012-02-02
申请人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译：提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。

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