专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110176570A1 Semiconductor light emitting device 有权
公开(公告)号：US20110176570A1
公开(公告)日：2011-07-21
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

2. 发明授权

US07965750B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07965750B2
公开(公告)日：2011-06-21
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

3. 发明申请

US20110064109A1 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US20110064109A1
公开(公告)日：2011-03-17
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/323 , H01S5/00 , H01S5/183
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前缩窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

4. 发明授权

US08514905B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08514905B2
公开(公告)日：2013-08-20
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入到有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前变窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

5. 发明授权

US08102890B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08102890B2
公开(公告)日：2012-01-24
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/091 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

6. 发明申请

US20090285253A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20090285253A1
公开(公告)日：2009-11-19
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

7. 发明授权

US08761221B2 Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08761221B2
公开(公告)日：2014-06-24
申请号：US12078681
申请日：2008-04-03
申请人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要翻译：发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

8. 发明授权

US08035187B2 Semiconductor light receiving element and optical communication system 有权
标题翻译：半导体光接收元件和光通信系统
公开(公告)号：US08035187B2
公开(公告)日：2011-10-11
申请号：US12362066
申请日：2009-01-29
申请人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
发明人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/00
CPC分类号： H01L31/1055 , G02B6/42 , G02B6/4206 , G02B6/4246
摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.
摘要翻译：本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

9. 发明申请

US20090194837A1 SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT, AND OPTICAL COMMUNICATION SYSTEM 有权
标题翻译：半导体光接收元件和制造半导体光接收元件的方法和光通信系统
公开(公告)号：US20090194837A1
公开(公告)日：2009-08-06
申请号：US12362066
申请日：2009-01-29
申请人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
发明人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/1055 , G02B6/42 , G02B6/4206 , G02B6/4246
摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.
摘要翻译：本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

10. 发明授权

US07873092B2 Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US07873092B2
公开(公告)日：2011-01-18
申请号：US11980459
申请日：2007-10-31
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01L31/101 , H01S5/0683 , H01S5/18311 , H01S2301/02
摘要： The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.
摘要翻译：本发明提供一种实现改进的光检测精度的激光二极管。激光二极管包括其中依次包括第一导电类型，有源层和第二导电类型的第二半导体层的第一半导体层的堆叠结构; 光电检测层; 以及设置在从有源层输出的光的驻波的波腹或节点的对应位置上的多个光吸收层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式