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41. 发明申请

US20160351767A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE 有权
标题翻译：半导体发光器件封装
公开(公告)号：US20160351767A1
公开(公告)日：2016-12-01
申请号：US15056117
申请日：2016-02-29
申请人： Pun Jae CHOI , Geun Woo KO , Yong Min KWON , Ah Young WOO , Jun Ho LEE , Jin Wook CHUNG
发明人： Pun Jae CHOI , Geun Woo KO , Yong Min KWON , Ah Young WOO , Jun Ho LEE , Jin Wook CHUNG
IPC分类号： H01L33/62 , H01L33/38 , H01L27/15 , H01L33/54
CPC分类号： H01L33/62 , H01L25/0753 , H01L25/167 , H01L33/486 , H01L33/56 , H01L33/60
摘要： A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.
摘要翻译：一种半导体发光器件封装，包括：发光结构，具有第一表面，与第一表面相对的第二表面和设置在第一和第二表面之间的侧表面，发光结构包括第一发光层叠体和第二发光层叠体，第一发光层叠体和第二发光层叠体各自包括：第一导电型半导体层; 有源层和第二导电型半导体层，设置在发光结构的第二表面上并被配置为电连接第一和第二发光层压板的互连器; 围绕发光结构的侧表面的金属引导件; 以及围绕所述金属引导件和所述发光结构的所述第二侧面和所述侧表面的密封剂，并且暴露所述发光结构的所述第一表面。

42. 发明授权

US09312249B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09312249B2
公开(公告)日：2016-04-12
申请号：US14338225
申请日：2014-07-22
申请人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
摘要翻译：在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。第二导电型电极包括导电孔和电连接部。导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。电连接部分从导电通孔延伸并暴露于发光结构的外部。绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。在从有源层发射的光的路径上形成不均匀结构。

43. 发明申请

US20150221843A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法和使用其的半导体发光器件封装
公开(公告)号：US20150221843A1
公开(公告)日：2015-08-06
申请号：US14615116
申请日：2015-02-05
申请人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
发明人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
IPC分类号： H01L33/62 , H01L33/56 , H01L33/44 , H01L33/10 , H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

44. 发明申请

US20150147835A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20150147835A1
公开(公告)日：2015-05-28
申请号：US14612244
申请日：2015-02-02
申请人： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
发明人： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
IPC分类号： H01L33/00 , H01L33/42 , H01L33/40
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

45. 发明授权

US08716043B2 Method for manufacturing semiconductor light emitting diode 有权
标题翻译：制造半导体发光二极管的方法
公开(公告)号：US08716043B2
公开(公告)日：2014-05-06
申请号：US12881440
申请日：2010-09-14
申请人： Pun Jae Choi , Sang Yeob Song , Suk Youn Hong
发明人： Pun Jae Choi , Sang Yeob Song , Suk Youn Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/24
摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.
摘要翻译：提供一种高效半导体发光二极管及其制造方法。半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型氮化物半导体层，其依次形成在导电基板上。在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

46. 发明授权

US08686454B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08686454B2
公开(公告)日：2014-04-01
申请号：US13125256
申请日：2009-10-22
申请人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
发明人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

47. 发明授权

US08593063B2 White light emitting device 失效
标题翻译：白色发光装置
公开(公告)号：US08593063B2
公开(公告)日：2013-11-26
申请号：US13474240
申请日：2012-05-17
申请人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
发明人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.
摘要翻译：白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。该装置还包括用于发射红色波长的光的装置。

48. 发明授权

US08188496B2 Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same 有权
标题翻译：包括具有保护层的基板的半导体发光器件及其制造方法
公开(公告)号：US08188496B2
公开(公告)日：2012-05-29
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

49. 发明申请

US20120056150A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN 审中-公开
标题翻译：具有电极图案的氮化物半导体发光器件
公开(公告)号：US20120056150A1
公开(公告)日：2012-03-08
申请号：US13292774
申请日：2011-11-09
申请人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
发明人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
IPC分类号： H01L33/04
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.
摘要翻译：提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

50. 发明申请

US20120018764A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120018764A1
公开(公告)日：2012-01-26
申请号：US13127847
申请日：2009-11-16
申请人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/62
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.
摘要翻译：本发明涉及一种用于半导体的垂直/水平发光二极管。本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

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