专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150221843A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法和使用其的半导体发光器件封装
公开(公告)号：US20150221843A1
公开(公告)日：2015-08-06
申请号：US14615116
申请日：2015-02-05
申请人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
发明人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
IPC分类号： H01L33/62 , H01L33/56 , H01L33/44 , H01L33/10 , H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

2. 发明申请

US20160149086A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS HAVING THE SAME 有权
标题翻译：半导体发光器件及其半导体发光器件
公开(公告)号：US20160149086A1
公开(公告)日：2016-05-26
申请号：US14799675
申请日：2015-07-15
申请人： Jae In SIM , Sang Yeob SONG , Jong Hoon HA , Gi Bum KIM , Seung Woo CHOI
发明人： Jae In SIM , Sang Yeob SONG , Jong Hoon HA , Gi Bum KIM , Seung Woo CHOI
IPC分类号： H01L33/46 , H01L33/50 , H01L33/62 , H01L33/52 , H01L33/38 , H01L33/44
CPC分类号： H01L33/46 , H01L33/38 , H01L33/62 , H01L2224/16245
摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.
摘要翻译：提供了一种半导体发光器件。半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式