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1. 发明申请

US20120032218A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120032218A1
公开(公告)日：2012-02-09
申请号：US13125256
申请日：2009-10-22
申请人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
发明人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

2. 发明授权

US08809893B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08809893B2
公开(公告)日：2014-08-19
申请号：US13127847
申请日：2009-11-16
申请人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/62
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.
摘要翻译：本发明涉及一种用于半导体的垂直/水平发光二极管。本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

3. 发明授权

US09312249B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09312249B2
公开(公告)日：2016-04-12
申请号：US14338225
申请日：2014-07-22
申请人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
摘要翻译：在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。第二导电型电极包括导电孔和电连接部。导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。电连接部分从导电通孔延伸并暴露于发光结构的外部。绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。在从有源层发射的光的路径上形成不均匀结构。

4. 发明授权

US08686454B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08686454B2
公开(公告)日：2014-04-01
申请号：US13125256
申请日：2009-10-22
申请人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
发明人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

5. 发明申请

US20120018764A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120018764A1
公开(公告)日：2012-01-26
申请号：US13127847
申请日：2009-11-16
申请人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/62
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.
摘要翻译：本发明涉及一种用于半导体的垂直/水平发光二极管。本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

6. 发明授权

US08008683B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08008683B2
公开(公告)日：2011-08-30
申请号：US12406568
申请日：2009-03-18
申请人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
发明人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.
摘要翻译：本发明提供了一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，其中区域其中第一电极层和第一半导体层彼此接触的是其半导体发光器件的面积的3至13％。

7. 发明授权

US07968893B2 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07968893B2
公开(公告)日：2011-06-28
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
发明人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
IPC分类号： H01L31/0256 , H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

8. 发明授权

US08658329B2 Advanced membrane electrode assemblies for fuel cells 有权
标题翻译：用于燃料电池的先进膜电极组件
公开(公告)号：US08658329B2
公开(公告)日：2014-02-25
申请号：US13528457
申请日：2012-06-20
申请人： Yu Seung Kim , Byran S. Pivovar
发明人： Yu Seung Kim , Byran S. Pivovar
IPC分类号： H01M8/10 , B01J49/00 , C08J5/20
CPC分类号： B01D69/12 , H01M4/881
摘要： A method of preparing advanced membrane electrode assemblies (MEA) for use in fuel cells. A base polymer is selected for a base membrane. An electrode composition is selected to optimize properties exhibited by the membrane electrode assembly based on the selection of the base polymer. A property-tuning coating layer composition is selected based on compatibility with the base polymer and the electrode composition. A solvent is selected based on the interaction of the solvent with the base polymer and the property-tuning coating layer composition. The MEA is assembled by preparing the base membrane and then applying the property-tuning coating layer to form a composite membrane. Finally, a catalyst is applied to the composite membrane.
摘要翻译：一种制备用于燃料电池的先进膜电极组件（MEA）的方法。选择基础聚合物用于基膜。选择电极组合物以根据基础聚合物的选择来优化膜电极组件所表现出的性能。基于与基础聚合物和电极组成的相容性来选择性质调节涂层组合物。基于溶剂与基础聚合物和性能调节涂层组合物的相互作用来选择溶剂。通过制备基膜，然后施加性能调节涂层以形成复合膜来组装MEA。最后，将催化剂应用于复合膜。

9. 发明授权

US08236207B2 Non-aqueous liquid compositions comprising ion exchange polymers reference to related application 有权
标题翻译：包含离子交换聚合物的非水液体组合物参考相关申请
公开(公告)号：US08236207B2
公开(公告)日：2012-08-07
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
IPC分类号： H01B1/00 , H01B1/12 , H01B1/02 , H01B1/22 , H01M4/02 , H01M4/88 , H01M4/36 , H01M4/92 , H01M8/00 , C09K3/00 , B01J31/00 , B01J37/00 , B01J23/40 , B01J23/74 , B01J23/00 , C08F4/02 , C08F4/60
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

10. 发明申请

US20110049441A1 NON-AQUEOUS LIQUID COMPOSITIONS COMPRISING ION EXCHANGE POLYMERS CROSS REFERENCE TO RELATED APPLICATION 有权
标题翻译：包含离子交换聚合物的非水性液体组合物相关申请的交叉引用
公开(公告)号：US20110049441A1
公开(公告)日：2011-03-03
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
IPC分类号： H01B1/22 , H01B1/12
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

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