专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06312855B1 Three-phase phase shift mask 有权
标题翻译：三相相移掩模
公开(公告)号：US06312855B1
公开(公告)日：2001-11-06
申请号：US09444466
申请日：1999-11-22
申请人： Jiunn-Ren Hwang , I-Hsiung Huang , Anseime Chen
发明人： Jiunn-Ren Hwang , I-Hsiung Huang , Anseime Chen
IPC分类号： G03F900
CPC分类号： G03F1/28
摘要： A three-phase phase shift mask. On a transparent substrate, a non-transparent pattern covering a portion of the transparent substrate is formed, while the other portion of the substrate is remained exposed. A proximity region around a comer of the non-transparent pattern is equally partitioned three phase-shift areas different from each other with a phase shift of 120°. The formation of these three phase-shift areas uses two etching steps to form a first and a second phase-shift areas, while a portion of the exposed substrate is etched twice as a third phase-shift area.
摘要翻译：三相相移掩模。在透明基板上，形成覆盖透明基板的一部分的不透明图案，同时基板的另一部分保持露出。不透明图案的周围的邻近区域被相等地划分为相位相差120°的三个相移区域。这三个相移区域的形成使用两个蚀刻步骤来形成第一和第二相移区域，而暴露的衬底的一部分被蚀刻两次作为第三相移区域。

42. 发明授权

US6080527A Optical proximity correction of L and T shaped patterns on negative photoresist 有权
标题翻译：负光致抗蚀剂上L和T形图案的光学邻近校正
公开(公告)号：US6080527A
公开(公告)日：2000-06-27
申请号：US442861
申请日：1999-11-18
申请人： I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
发明人： I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/36
摘要： An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.
摘要翻译：一种用于在负光致抗蚀剂上整流图案的光学邻近校正方法。集成电路的线路图案分为L形区域或T形区域。 L形或T形区域进一步分解成矩形斑块。每个矩形贴片的面积被适当地减小并再现到光掩模上。光掩模用于形成校正的光致抗蚀剂图案。

43. 发明授权

US08609545B2 Method to improve mask critical dimension uniformity (CDU) 有权
标题翻译：改善掩模临界尺寸均匀性（CDU）的方法
公开(公告)号：US08609545B2
公开(公告)日：2013-12-17
申请号：US12031501
申请日：2008-02-14
申请人： I-Hsiung Huang , Chi-Lin Lu , Heng-Jen Lee , Sheng-Chi Chin , Yao-Ching Ku
发明人： I-Hsiung Huang , Chi-Lin Lu , Heng-Jen Lee , Sheng-Chi Chin , Yao-Ching Ku
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F1/32 , G03F1/36 , G03F1/80 , H01J37/32422 , H01L21/67167 , H01L21/67207 , H01L21/67236
摘要： A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.
摘要翻译：公开了一种用于制造衬底的方法和系统。首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。从等离子体过滤板文库中选择并除去等离子体过滤板。然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。随后，在衬底中进行蚀刻处理。

44. 发明授权

US08592102B2 Cost-effective method for extreme ultraviolet (EUV) mask production 有权
标题翻译：用于极紫外（EUV）掩模生产的成本效益高的方法
公开(公告)号：US08592102B2
公开(公告)日：2013-11-26
申请号：US12650985
申请日：2009-12-31
申请人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G03F1/24 , G03F1/72 , G03F1/84
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供空白掩模和要在空白掩模上图案化的设计布局，所述设计布局包括临界区域; 检查空白掩模的缺陷并产生与空白掩模相关联的缺陷分布图; 将缺陷分布图映射到设计布局; 进行面膜制作过程; 以及基于所述映射执行掩模缺陷修复处理。

45. 发明申请

US20130285264A1 WAFER ASSEMBLY WITH CARRIER WAFER 有权
标题翻译：带载波的WAFER装配
公开(公告)号：US20130285264A1
公开(公告)日：2013-10-31
申请号：US13539243
申请日：2012-06-29
申请人： I-Hsiung HUANG , Heng-Hsin LIU , Heng-Jen LEE , Chin-Hsiang LIN
发明人： I-Hsiung HUANG , Heng-Hsin LIU , Heng-Jen LEE , Chin-Hsiang LIN
IPC分类号： H01L23/544 , H01L21/02
CPC分类号： H01L21/0201 , H01L21/6835 , H01L2221/6834 , H01L2221/68381
摘要： A wafer assembly includes a process wafer and a carrier wafer. Integrated circuits are formed on the process wafer. The carrier wafer is bonded to the process wafer. The carrier wafer has at least one alignment mark.
摘要翻译：晶片组件包括处理晶片和载体晶片。集成电路形成在处理晶片上。载体晶片结合到工艺晶片。载体晶片具有至少一个对准标记。

46. 发明申请

US20110161893A1 LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING 有权
标题翻译：用于掩模加工的平版印刷机检查
公开(公告)号：US20110161893A1
公开(公告)日：2011-06-30
申请号：US12976646
申请日：2010-12-22
申请人： CHIN-HSIANG LIN , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： CHIN-HSIANG LIN , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G06F17/50
CPC分类号： G03F1/72 , G03F1/86
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供根据设计图案制造的掩模; 从掩模中提取掩模图案; 将掩模图案转换成渲染的掩模图案，其中模拟设计图案包括设计图案和掩模中的任何缺陷; 使用所渲染的掩模图案来模拟光刻工艺以产生虚拟晶片图案; 以及基于所述虚拟晶片图案确定所述掩模中的任何缺陷是否是关键的。面罩中的关键缺陷可以修复。

47. 发明申请

US20100321660A1 METHOD AND APPARATUS FOR REDUCING DOWN TIME OF A LITHOGRAPHY SYSTEM 有权
标题翻译：降低刻蚀系统下降时间的方法和装置
公开(公告)号：US20100321660A1
公开(公告)日：2010-12-23
申请号：US12486565
申请日：2009-06-17
申请人： Jui-Chun Peng , Heng-Jen Lee , Tung-Li Wu , I-Hsiung Huang
发明人： Jui-Chun Peng , Heng-Jen Lee , Tung-Li Wu , I-Hsiung Huang
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70033 , G03F7/70916 , H05G2/005 , H05G2/008
摘要： An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.
摘要翻译：一种装置包括辐射源，辐射源发射基本上所有的一定量物质蒸发的辐射束; 以及具有第一和第二表面部分的结构，第一操作模式，其中更大量的蒸发副产物撞击在第一表面部分上，以及第二操作模式，其中较大量的副产物撞击在第二表面部分上。不同的方面涉及朝向一定数量的材料发射辐射束，所述辐射束导致基本上所有量的材料蒸发; 在第一操作模式中操作具有第一和第二表面部分的结构，其中更大量的蒸发副产物撞击在第一表面部分上; 然后以第二操作模式操作该结构，其中较大量的副产物撞击在第二表面部分上。

48. 发明申请

US20100013105A1 METHOD OF MANUFACTURING PHOTOMASK AND METHOD OF REPAIRING OPTICAL PROXIMITY CORRECTION 有权
标题翻译：制造光电子的方法和修复光学近似校正的方法
公开(公告)号：US20100013105A1
公开(公告)日：2010-01-21
申请号：US12568027
申请日：2009-09-28
申请人： Ling-Chieh Lin , Chien-Fu Lee , I-Hsiung Huang
发明人： Ling-Chieh Lin , Chien-Fu Lee , I-Hsiung Huang
IPC分类号： H01L23/48
CPC分类号： G03F1/36
摘要： A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.
摘要翻译：描述制造光掩模的方法。提供光掩模的图形数据，并且对图形数据进行光学邻近校正。然后使用光学邻近校正对图形数据执行处理规则检查。当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。然后根据校正和修复的图形数据形成光掩模的图案。

49. 发明申请

US20070053077A1 Customer illumination aperture structure 审中-公开
标题翻译：客户照明光圈结构
公开(公告)号：US20070053077A1
公开(公告)日：2007-03-08
申请号：US11218454
申请日：2005-09-02
申请人： Ling-Chieh Lin , I-Hsiung Huang , Te-Hung Wu , Chin-Lung Lin
发明人： Ling-Chieh Lin , I-Hsiung Huang , Te-Hung Wu , Chin-Lung Lin
IPC分类号： G02B9/00 , G02B9/08
CPC分类号： G03F7/701 , G02B5/005 , G03F7/70091
摘要： A customer illumination aperture (CIA) structure for lithographic exposure is disclosed, including a central part and at least one off-axis part around the central part. The off-axis part of the CIA is disposed in a symmetric manner with respect to the central part.
摘要翻译：公开了一种用于光刻曝光的客户照明孔径（CIA）结构，包括中心部分和围绕中心部分的至少一个离轴部分。 CIA的离轴部分相对于中心部分以对称的方式设置。

50. 发明授权

US06839126B2 Photolithography process with multiple exposures 有权
标题翻译：具有多次曝光的光刻工艺
公开(公告)号：US06839126B2
公开(公告)日：2005-01-04
申请号：US10033891
申请日：2002-01-03
申请人： Yeong-Song Yen , I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
发明人： Yeong-Song Yen , I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
IPC分类号： G03F7/20 , G03B27/74 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70141 , G03F7/70425 , G03F7/70466
摘要： A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式