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1. 发明授权

US09671685B2 Lithographic plane check for mask processing 有权
公开(公告)号：US09671685B2
公开(公告)日：2017-06-06
申请号：US12976646
申请日：2010-12-22
申请人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G06F17/50 , G03F1/72 , G03F1/86
CPC分类号： G03F1/72 , G03F1/86
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.

2. 发明申请

US20110159410A1 COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION 有权
标题翻译：用于极端超紫外线（EUV）掩蔽生产的成本有效的方法
公开(公告)号：US20110159410A1
公开(公告)日：2011-06-30
申请号：US12650985
申请日：2009-12-31
申请人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供空白掩模和要在空白掩模上图案化的设计布局，所述设计布局包括临界区域; 检查空白掩模的缺陷并产生与空白掩模相关联的缺陷分布图; 将缺陷分布图映射到设计布局; 进行面膜制作过程; 以及基于所述映射执行掩模缺陷修复处理。

3. 发明授权

US08592102B2 Cost-effective method for extreme ultraviolet (EUV) mask production 有权
标题翻译：用于极紫外（EUV）掩模生产的成本效益高的方法
公开(公告)号：US08592102B2
公开(公告)日：2013-11-26
申请号：US12650985
申请日：2009-12-31
申请人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G03F1/24 , G03F1/72 , G03F1/84
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供空白掩模和要在空白掩模上图案化的设计布局，所述设计布局包括临界区域; 检查空白掩模的缺陷并产生与空白掩模相关联的缺陷分布图; 将缺陷分布图映射到设计布局; 进行面膜制作过程; 以及基于所述映射执行掩模缺陷修复处理。

4. 发明申请

US20110161893A1 LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING 有权
标题翻译：用于掩模加工的平版印刷机检查
公开(公告)号：US20110161893A1
公开(公告)日：2011-06-30
申请号：US12976646
申请日：2010-12-22
申请人： CHIN-HSIANG LIN , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： CHIN-HSIANG LIN , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G06F17/50
CPC分类号： G03F1/72 , G03F1/86
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供根据设计图案制造的掩模; 从掩模中提取掩模图案; 将掩模图案转换成渲染的掩模图案，其中模拟设计图案包括设计图案和掩模中的任何缺陷; 使用所渲染的掩模图案来模拟光刻工艺以产生虚拟晶片图案; 以及基于所述虚拟晶片图案确定所述掩模中的任何缺陷是否是关键的。面罩中的关键缺陷可以修复。

5. 发明授权

US08818072B2 Rendered database image-to-inspection image optimization for inspection 有权
标题翻译：渲染数据库图像到检查图像优化进行检查
公开(公告)号：US08818072B2
公开(公告)日：2014-08-26
申请号：US12868483
申请日：2010-08-25
申请人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
发明人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G06T7/001 , G06T2207/30148
摘要： The present disclosure provides a method of inspecting a photolithographic mask wherein a design database is received, and a feature of the design database is adjusted by a bias factor to produce a biased database. Image rendering is performed on the biased database to produce a biased image. A mask is also created using the design database, and the mask is imaged to produce a mask image. The biased image is compared to the mask image, and a new value for the bias factor may be determined based on the comparison.
摘要翻译：本公开提供了一种检查其中接收到设计数据库的光刻掩模的方法，并且通过偏置因子来调整设计数据库的特征以产生偏置的数据库。在偏置数据库上执行图像渲染以产生偏置图像。还使用设计数据库创建掩模，并对掩模进行成像以产生掩模图像。将偏置图像与掩模图像进行比较，并且可以基于比较来确定偏置因子的新值。

6. 发明申请

US20120051621A1 RENDERED DATABASE IMAGE-TO-INSPECTION IMAGE OPTIMIZATION FOR INSPECTION 有权
标题翻译：用于检查的渲染数据库图像到检查图像优化
公开(公告)号：US20120051621A1
公开(公告)日：2012-03-01
申请号：US12868483
申请日：2010-08-25
申请人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
发明人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G06T7/001 , G06T2207/30148
摘要： The present disclosure provides a method of inspecting a photolithographic mask wherein a design database is received, and a feature of the design database is adjusted by a bias factor to produce a biased database. Image rendering is performed on the biased database to produce a biased image. A mask is also created using the design database, and the mask is imaged to produce a mask image. The biased image is compared to the mask image, and a new value for the bias factor may be determined based on the comparison.
摘要翻译：本公开提供了一种检查其中接收到设计数据库的光刻掩模的方法，并且通过偏置因子来调整设计数据库的特征以产生偏置的数据库。在偏置数据库上执行图像渲染以产生偏置图像。还使用设计数据库创建掩模，并对掩模进行成像以产生掩模图像。将偏置图像与掩模图像进行比较，并且可以基于比较来确定偏置因子的新值。

7. 发明授权

US08981557B2 Method for forming photovoltaic cell, and resulting photovoltaic cell 有权
标题翻译：用于形成光伏电池的方法，以及所得到的光伏电池
公开(公告)号：US08981557B2
公开(公告)日：2015-03-17
申请号：US13621318
申请日：2012-09-17
申请人： Chih-Chiang Tu , Chun-Lang Chen
发明人： Chih-Chiang Tu , Chun-Lang Chen
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , G03F7/00 , B82Y10/00 , B82Y40/00 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L31/022425 , H01L31/022441 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.
摘要翻译：公开了一种光伏电池的制造方法。方法包括利用纳米压印技术制造具有选择性发射极和埋入接触（电极）结构的光伏电池。所述方法包括提供具有第一表面和与第一表面相对的第二表面的半导体衬底; 在所述半导体衬底中邻近所述第一表面形成第一掺杂区; 执行纳米压印工艺和蚀刻工艺以在半导体衬底中形成沟槽，沟槽从第一表面延伸到半导体衬底中; 在所述沟槽内的所述半导体衬底中形成第二掺杂区域，所述第二掺杂区域具有比所述第一掺杂区域更大的掺杂浓度; 并用导电材料填充沟槽。纳米压印工艺使用模具来定义电极线布局的位置。

8. 发明申请

US20130323625A1 Systems and Methods for Lithography Masks 有权
标题翻译：光刻面具的系统和方法
公开(公告)号：US20130323625A1
公开(公告)日：2013-12-05
申请号：US13486015
申请日：2012-06-01
申请人： Chih-Chiang Tu , Hsin-Chang Lee , Jong-Yuh Chang , Chia-Jen Chen , Chun-Lang Chen
发明人： Chih-Chiang Tu , Hsin-Chang Lee , Jong-Yuh Chang , Chia-Jen Chen , Chun-Lang Chen
IPC分类号： G03F1/00 , G03F1/26 , G03F1/36 , G03F1/50
CPC分类号： G03F1/36 , G03F1/50 , G03F1/58 , G03F1/80
摘要： Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.
摘要翻译：公开了掩模毛坯和掩模的结构，以及制造掩模的方法。当过程经过蚀刻步骤三次时，新的掩模坯料和掩模包括三层蚀刻停止层，以防止损坏石英基板。三重蚀刻停止层可以包括含有氮（TaN）的钽的第一子层，含有氧（TaO）的钽的第二子层和TaN的第三子层。或者，三重蚀刻停止层可以包括SiON材料的第一子层，TaO材料的第二子层和SiON材料的第三子层。另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料，当该工艺经过蚀刻步骤三次时，其可以防止对石英衬底的损坏。通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。

9. 发明申请

US20120261563A1 CONTAMINATION INSPECTION 有权
标题翻译：污染检查
公开(公告)号：US20120261563A1
公开(公告)日：2012-10-18
申请号：US13085731
申请日：2011-04-13
申请人： Chien-Hung Lai , Biow-Hiem Ong , Chia-Shih Lin , Jong-Yuh Chang , Chih-Chiang Tu
发明人： Chien-Hung Lai , Biow-Hiem Ong , Chia-Shih Lin , Jong-Yuh Chang , Chih-Chiang Tu
IPC分类号： G01D18/00 , B05C13/02 , H01L21/66
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.
摘要翻译：提供了一种形成用于检查系统的标准掩模的方法，所述方法包括在室内提供衬底，并在室内提供原硅酸四乙酯（TEOS）前体。该方法还包括使TEOS前体与电子束反应，以在衬底上的一个或多个受控位置处形成受控尺寸的氧化硅颗粒，氧化硅颗粒被设置为模拟的污染缺陷。

10. 发明授权

US08133661B2 Superimpose photomask and method of patterning 有权
标题翻译：叠加光掩模和图案化方法
公开(公告)号：US08133661B2
公开(公告)日：2012-03-13
申请号：US12582959
申请日：2009-10-21
申请人： Hsiao Chih Chang , Dong-Hsu Cheng , Chih-Chiang Tu
发明人： Hsiao Chih Chang , Dong-Hsu Cheng , Chih-Chiang Tu
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/50 , G03F7/70283 , G03F7/70433
摘要： Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process.
摘要翻译：提供一种光掩模，其包括具有第一区域和第二区域的基板，设置在基板的第一区域中的第一图案和设置在基板的第二区域中的第二图案。第一和第二图案是在光刻工艺中转移到晶片上的设计图案的分解。

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