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1. 发明授权

US06839126B2 Photolithography process with multiple exposures 有权
标题翻译：具有多次曝光的光刻工艺
公开(公告)号：US06839126B2
公开(公告)日：2005-01-04
申请号：US10033891
申请日：2002-01-03
申请人： Yeong-Song Yen , I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
发明人： Yeong-Song Yen , I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
IPC分类号： G03F7/20 , G03B27/74 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70141 , G03F7/70425 , G03F7/70466
摘要： A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.

2. 发明授权

US06337269B1 Method of fabricating a dual damascene structure 有权
标题翻译：制造双镶嵌结构的方法
公开(公告)号：US06337269B1
公开(公告)日：2002-01-08
申请号：US09885042
申请日：2001-06-21
申请人： I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung
发明人： I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/76804 , H01L21/76813
摘要： The present invention fabricates a dual damascene structure. A passivation layer, a first dielectric layer, a second passivation layer, a second dielectric layer, a third passivation layer and a third dielectric layer are formed on the surface of the semiconductor wafer followed by etching the third dielectric layer to form a pattern of an upper trench of the dual damascene structure. Then the third passivation layer and the second dielectric layer are etched down to the surface of the second passivation layer so as to form a pattern of a via hole of the dual damascene structure. Thereafter, the third passivation layer and the second passivation layer not covered by the third dielectric layer and the second dielectric layer are removed. The third dielectric layer and the second passivation layer are used as hard masks to remove the second dielectric layer and the first dielectric layer until the surface of the first passivation layer. Finally, the second passivation layer and the first passivation layer not covered by the second dielectric layer and the first dielectric layer are removed to the surface of the conductive layer so completing the process of fabricating the dual damascene structure.
摘要翻译：本发明制造双镶嵌结构。在半导体晶片的表面上形成钝化层，第一介电层，第二钝化层，第二介电层，第三钝化层和第三介电层，然后蚀刻第三介电层，形成图案双层镶嵌结构的上沟槽。然后，将第三钝化层和第二介电层向下蚀刻到第二钝化层的表面，以形成双镶嵌结构的通孔的图案。此后，除去未被第三电介质层和第二电介质层覆盖的第三钝化层和第二钝化层。第三介电层和第二钝化层用作硬掩模以去除第二介电层和第一介电层直到第一钝化层的表面。最后，将第二钝化层和未被第二介电层和第一介电层覆盖的第一钝化层除去到导电层的表面，从而完成制造双镶嵌结构的工艺。

3. 发明申请

US20050277301A1 Method for forming a plane structure 审中-公开
标题翻译：用于形成平面结构的方法
公开(公告)号：US20050277301A1
公开(公告)日：2005-12-15
申请号：US11196275
申请日：2005-08-04
申请人： Jui-Tsen Huang , Kuei-Chun Hung
发明人： Jui-Tsen Huang , Kuei-Chun Hung
IPC分类号： H01L21/311 , H01L21/3115 , H01L21/312 , H01L21/461
CPC分类号： H01L21/02282 , H01L21/02118 , H01L21/31133 , H01L21/31155 , H01L21/312
摘要： A method for forming a plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying a solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.
摘要翻译：一种用于形成平面结构的方法。它包括以下步骤：在基板上形成厚度较厚的液体材料，使液体材料和基板围绕基板的轴线旋转，在旋转的液体材料上施加溶剂以除去部分液体材料。它还包括以下步骤：在基底上形成较厚的可移除材料，并部分地去除可移除材料的表面部分。

4. 发明授权

US06589881B2 Method of forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06589881B2
公开(公告)日：2003-07-08
申请号：US09997339
申请日：2001-11-27
申请人： I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
发明人： I-Hsiung Huang , Jiunn-Ren Hwang , Kuei-Chun Hung , Ching-Hsu Chang
IPC分类号： H01L21302
CPC分类号： H01L21/76835 , H01L21/76807 , H01L21/76813
摘要： A method of forming a dual damascene structure. A substrate having a conductive layer thereon is provided. A passivation layer, a first dielectric layer, an etching stop layer, a second dielectric layer and cap layer serving as a base anti-reflection coating are sequentially formed over the substrate. The cap layer and the second dielectric layer are patterned to form a first opening that exposes a portion of the etching stop layer. A patterned negative photoresist layer having a second opening therein is formed above the cap layer. The cap layer exposed by the second opening and the second dielectric layer exposed by the first opening are removed. Thereafter, the second dielectric layer exposed by the second opening is removed to form a trench and the first dielectric layer exposed by the first opening is removed to form a via opening. The passivation layer exposed by via opening and then the negative photoresist layer is removed. A conformal barrier layer and a conductive layer are sequentially formed over the trench and the via opening with the conductive layer, completely filling the trench and the via opening.
摘要翻译：形成双镶嵌结构的方法。提供其上具有导电层的基板。在衬底上顺序形成钝化层，第一介电层，蚀刻停止层，第二电介质层和用作基底防反射涂层的覆盖层。将盖层和第二介电层图案化以形成暴露蚀刻停止层的一部分的第一开口。在其上方形成了具有第二开口的图案化的负性光致抗蚀剂层。除去由第二开口暴露的盖层和由第一开口露出的第二介质层。此后，除去由第二开口露出的第二电介质层以形成沟槽，并且去除由第一开口暴露的第一电介质层以形成通孔。去除通过开口暴露的钝化层，然后去除负的光致抗蚀剂层。在沟槽和通孔开口上依次形成保形阻挡层和导电层，导电层完全填充沟槽和通孔。

5. 发明授权

US06458705B1 Method for forming via-first dual damascene interconnect structure 有权
标题翻译：用于形成通孔第一双镶嵌互连结构的方法
公开(公告)号：US06458705B1
公开(公告)日：2002-10-01
申请号：US09874522
申请日：2001-06-06
申请人： Kuei-Chun Hung , Vencent Chang , I-Hsiung Huang , Ya-Hui Chang
发明人： Kuei-Chun Hung , Vencent Chang , I-Hsiung Huang , Ya-Hui Chang
IPC分类号： H01L2100
CPC分类号： H01L21/76808
摘要： In accordance with the present invention, a method for forming a via-first dual damascene interconnect structure by using gap-filling material whose thickness is easily controlled by a developer is provided. The essential part of the present invention is the application of gap-filling materials such as novolak, PHS, acrylate, methacrylate, and COMA to fill vias. Filling vias with these materials can get a greater planar topography for trench patterning due to its excellent gap-filling capacity, protect the bottom of vias from damage during the trench etch, and prevent the fence problem by using a developer to control its thickness in vias.
摘要翻译：根据本发明，提供了一种通过使用其厚度容易由显影剂控制的间隙填充材料形成通孔 - 第一双镶嵌互连结构的方法。本发明的主要部分是填充空隙填充材料如酚醛清漆，PHS，丙烯酸酯，甲基丙烯酸酯和COMA以填充通孔。这些材料的填充通孔可以获得更大的平面形状，用于沟槽图案化，由于其优异的间隙填充能力，保护通孔的底部不受沟槽蚀刻期间的损坏，并通过使用显影剂来控制其通孔中的厚度来防止栅栏问题。

6. 发明授权

US06638664B2 Optical mask correction method 有权
公开(公告)号：US06638664B2
公开(公告)日：2003-10-28
申请号：US09954933
申请日：2001-09-18
申请人： Chang-Jyh Hsieh , Jiunn-Ren Hwang , Kuei-Chun Hung , Chien-Ming Wang
发明人： Chang-Jyh Hsieh , Jiunn-Ren Hwang , Kuei-Chun Hung , Chien-Ming Wang
IPC分类号： G03F900
CPC分类号： G03F1/36
摘要： A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.

7. 发明授权

US07101796B2 Method for forming a plane structure 失效
标题翻译：用于形成平面结构的方法
公开(公告)号：US07101796B2
公开(公告)日：2006-09-05
申请号：US10410255
申请日：2003-04-10
申请人： Jui-Tsen Huang , Kuei-Chun Hung
发明人： Jui-Tsen Huang , Kuei-Chun Hung
IPC分类号： H01L21/302
CPC分类号： H01L21/02282 , H01L21/02118 , H01L21/31133 , H01L21/31155 , H01L21/312
摘要： A method for forming a plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying a solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.
摘要翻译：一种用于形成平面结构的方法。它包括以下步骤：在基板上形成厚度较厚的液体材料，使液体材料和基板围绕基板的轴线旋转，在旋转的液体材料上施加溶剂以除去部分液体材料。它还包括以下步骤：在基底上形成较厚的可移除材料，并部分地去除可移除材料的表面部分。

8. 发明授权

US06624055B1 Method for forming a plane structure 失效
标题翻译：用于形成平面结构的方法
公开(公告)号：US06624055B1
公开(公告)日：2003-09-23
申请号：US10217471
申请日：2002-08-14
申请人： Jui-Tsen Huang , Kuei-Chun Hung
发明人： Jui-Tsen Huang , Kuei-Chun Hung
IPC分类号： H01L213205
CPC分类号： H01L21/31155
摘要： A method for forming plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.
摘要翻译：一种形成平面结构的方法。它包括以下步骤：在基板上形成厚度较厚的液体材料，使液体材料和基板围绕基板的轴线旋转，将溶剂施加在旋转液体材料上以除去部分液体材料。它还包括以下步骤：在基底上形成较厚的可移除材料，并部分地去除可移除材料的表面部分。

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