专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20100252933A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100252933A1
公开(公告)日：2010-10-07
申请号：US12815976
申请日：2010-06-15
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L23/522
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductor layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

32. 发明申请

US20070262708A1 Organic light emitting diode display with insulation film which contains SiO 有权
标题翻译：带有绝缘膜的有机发光二极管显示屏，含有SiO
公开(公告)号：US20070262708A1
公开(公告)日：2007-11-15
申请号：US11826959
申请日：2007-07-19
申请人： Jun Tanaka , Kiyoshi Ogata , Masaya Adachi , Miharu Otani
发明人： Jun Tanaka , Kiyoshi Ogata , Masaya Adachi , Miharu Otani
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L51/5262 , H01L51/5268
摘要： An active matrix type organic light emitting diode display serving as a bottom emission type device coupling out emission of an organic electroluminescence layer from a substrate where thin film transistors are formed or as a top emission type device coupling out the emission on the opposite side to the substrate. In a suitable layer (102, 106, 107) in each device, an insulating film containing SiO is formed. The insulating film is porous with nano pores in the film. The porous insulating film is controlled as to film density, film refractive index, nano pore diameter in film, average nano pore diameter in film and maximum nano pore diameter in film so that the refractive index is lower than that of a transparent electrode or a transparent substrate of the display holding the organic electroluminescence layer therebetween, and nano pores are present in the film. Light scattering effect can be obtained so that emission from the organic electroluminescence layer (110) can be coupled out to the outside efficiently.
摘要翻译：用作底部发射型器件的有源矩阵型有机发光二极管显示器，其从形成薄膜晶体管的衬底耦合出有机电致发光层的发射，或者作为顶部发射型器件将在相反侧的发射耦合到基质。在每个器件中的合适的层（102,106,107）中，形成含有SiO的绝缘膜。绝缘膜在膜中具有多孔的纳米孔。多孔绝缘膜的膜密度，膜折射率，膜中的纳米孔径，膜中的平均纳米孔径和膜中的最大纳米孔径被控制，使得折射率低于透明电极或透明电极的折射率在其间保持有机电致发光层的显示器的基板，并且在膜中存在纳米孔。可以获得光散射效果，使得有机电致发光层（110）的发射能够有效地耦合到外部。

33. 发明授权

US07232716B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07232716B2
公开(公告)日：2007-06-19
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： H01L21/66 , H01L21/268
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

34. 发明授权

US07064368B2 Resin-encapsulated semiconductor apparatus and process for its fabrication 失效
公开(公告)号：US07064368B2
公开(公告)日：2006-06-20
申请号：US10964637
申请日：2004-10-15
申请人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
发明人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
IPC分类号： H01L23/28 , H01L23/29
CPC分类号： C08L79/08 , H01L23/293 , H01L23/3171 , H01L23/4951 , H01L24/45 , H01L24/48 , H01L31/0203 , H01L2224/32245 , H01L2224/45144 , H01L2224/4826 , H01L2224/73215 , H01L2924/01019 , H01L2924/01039 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.

35. 发明授权

US06962751B2 Amorphous carbon coated tools and method of producing the same 有权
标题翻译：无定形碳涂层工具及其制造方法
公开(公告)号：US06962751B2
公开(公告)日：2005-11-08
申请号：US10167751
申请日：2002-06-11
申请人： Haruyo Fukui , Yoshiharu Utsumi , Miki Irie , Hisanori Ohara , Hideki Moriguchi , Satoru Kukino , Makoto Setoyama , Satoshi Ohtani , Naoto Okazaki , Kiyoshi Ogata
发明人： Haruyo Fukui , Yoshiharu Utsumi , Miki Irie , Hisanori Ohara , Hideki Moriguchi , Satoru Kukino , Makoto Setoyama , Satoshi Ohtani , Naoto Okazaki , Kiyoshi Ogata
IPC分类号： C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , C23C14/06 , B23B27/14
CPC分类号： C04B41/009 , C04B41/5001 , C04B41/52 , C04B41/85 , C04B41/89 , C04B2111/00405 , C23C14/0605 , Y10T407/27 , Y10T428/24479 , Y10T428/24628 , Y10T428/24942 , Y10T428/24975 , Y10T428/252 , Y10T428/265 , Y10T428/30 , C04B41/4529 , C04B41/455 , C04B41/5057 , C04B41/5133 , C04B41/522 , C04B35/117 , C04B35/584 , C04B35/581 , C04B35/52
摘要： Amorphous carbon coated tools include substrates formed from a cubic boron nitride sintered body, a diamond sintered body, a silicon nitride sintered body, or an aluminum oxide-titanium carbide sintered body, and amorphous carbon films thereon to make the cutting edges of the tools. The amorphous carbon films contain hydrogen at 5 atomic percent or below and have a maximum thickness of 0.05 μm to 0.5 μm on the cutting edges. The amorphous carbon films are most suitable for applications to cutting tools exemplified by cutters, knives, and slitters, and to indexable inserts used for example in turning tools including drills, endmills, and reamers, and milling cutters.
摘要翻译：无定形碳涂覆工具包括由立方氮化硼烧结体，金刚石烧结体，氮化硅烧结体或氧化铝 - 碳化钛烧结体形成的衬底，以及用于制造工具的切削刃的无定形碳膜。无定形碳膜含有5原子％以下的氢，切削刃的最大厚度为0.05〜0.5μm。无定形碳膜最适合用于切割机，刀具和切割机所示的切割工具，以及用于例如用于包括钻头，端铣刀和铰刀的车削刀具的可转位刀片和铣刀。

36. 发明申请

US20050202612A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050202612A1
公开(公告)日：2005-09-15
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

37. 发明申请

US20050156520A1 Organic light emitting diode display and method for manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20050156520A1
公开(公告)日：2005-07-21
申请号：US10898593
申请日：2004-07-26
申请人： Jun Tanaka , Kiyoshi Ogata , Masaya Adachi , Miharu Otani
发明人： Jun Tanaka , Kiyoshi Ogata , Masaya Adachi , Miharu Otani
IPC分类号： H05B33/22 , C09K11/00 , C09K11/06 , G09F9/30 , H01L27/32 , H01L51/52 , H05B33/00 , H05B33/06 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/26
CPC分类号： H01L27/3244 , H01L51/5262 , H01L51/5268
摘要： An active matrix type organic light emitting diode display serving as a bottom emission type device coupling out emission of an organic electroluminescence layer from a substrate where thin film transistors are formed or as a top emission type device coupling out the emission on the opposite side to the substrate. In a suitable layer (102, 106, 107) in each device, an insulating film containing SiO is formed. The insulating film is porous with nano pores in the film. The porous insulating film is controlled as to film density, film refractive index, nano pore diameter in film, average nano pore diameter in film and maximum nano pore diameter in film so that the refractive index is lower than that of a transparent electrode or a transparent substrate of the display holding the organic electroluminescence layer therebetween, and nano pores are present in the film. Light scattering effect can be obtained so that emission from the organic electroluminescence layer (110) can be coupled out to the outside efficiently.
摘要翻译：用作底部发射型器件的有源矩阵型有机发光二极管显示器，其从形成有薄膜晶体管的基板耦合出有机电致发光层的发射，或者作为顶部发射型器件将在相对侧的发射耦合到基质。在每个器件中的合适的层（102,106,107）中，形成含有SiO的绝缘膜。绝缘膜在膜中具有多孔的纳米孔。多孔绝缘膜的膜密度，膜折射率，膜中的纳米孔径，膜中的平均纳米孔径和膜中的最大纳米孔径被控制，使得折射率低于透明电极或透明电极的折射率在其间保持有机电致发光层的显示器的基板，并且在膜中存在纳米孔。可以获得光散射效果，使得有机电致发光层（110）的发射能够有效地耦合到外部。

38. 发明授权

US06867446B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US06867446B2
公开(公告)日：2005-03-15
申请号：US10268709
申请日：2002-10-11
申请人： Miharu Otani , Jun Tanaka , Kazufumi Suenaga , Kiyoshi Ogata
发明人： Miharu Otani , Jun Tanaka , Kazufumi Suenaga , Kiyoshi Ogata
IPC分类号： H01L21/768 , H01L21/02 , H01L21/312 , H01L21/316 , H01L21/8246 , H01L23/522 , H01L27/105 , H01L31/062
CPC分类号： H01L28/57 , H01L21/02118 , H01L21/02164 , H01L21/02175 , H01L21/02197 , H01L21/022 , H01L21/312 , H01L21/31604 , H01L21/31612 , H01L28/55 , H01L2224/45144 , H01L2224/48247 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material. This makes it possible to prevent thin film comprised of a dielectric material or a ferroelectric material from any deterioration caused by the hydrogen and water contained in the interlayer insulation film and passivation film of the semiconductor memory device and also by the stress of these films.
摘要翻译：在具有电介质膜或铁电体膜的电容器层的半导体存储器件中，作为形成在电容器和形成于其上部的布线层之间的层间绝缘膜或覆盖布线层的绝缘膜，具有多层膜被使用，其由第一绝缘膜和彼此叠置的第二绝缘膜组成; 前者为下层，由有机膜形成，后者为上层，由硬掩模材料形成。这使得可以防止由介电材料或铁电材料构成的薄膜由于半导体存储器件的层间绝缘膜和钝化膜中所含的氢和水引起的任何劣化，以及这些膜的应力。

39. 发明申请

US20050046047A1 Resin-encapsulated semiconductor apparatus and process for its fabrication 失效
公开(公告)号：US20050046047A1
公开(公告)日：2005-03-03
申请号：US10964637
申请日：2004-10-15
申请人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
发明人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
IPC分类号： C08L79/08 , H01L23/29 , H01L23/31 , H01L23/495 , H01L29/76 , H01L31/0203 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： C08L79/08 , H01L23/293 , H01L23/3171 , H01L23/4951 , H01L24/45 , H01L24/48 , H01L31/0203 , H01L2224/32245 , H01L2224/45144 , H01L2224/4826 , H01L2224/73215 , H01L2924/01019 , H01L2924/01039 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.

40. 发明授权

US06525359B2 Resin-encapsulated semiconductor apparatus and process for its fabrication 失效
公开(公告)号：US06525359B2
公开(公告)日：2003-02-25
申请号：US09969848
申请日：2001-10-04
申请人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
发明人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
IPC分类号： H01L2976
CPC分类号： C08L79/08 , H01L23/293 , H01L23/3171 , H01L23/4951 , H01L24/45 , H01L24/48 , H01L31/0203 , H01L2224/32245 , H01L2224/45144 , H01L2224/4826 , H01L2224/73215 , H01L2924/01019 , H01L2924/01039 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式