专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US5376802A Stencil mask and charge particle beam exposure method and apparatus using the stencil mask 失效
标题翻译：模板掩模和带电粒子束曝光方法和使用模板掩模的装置
公开(公告)号：US5376802A
公开(公告)日：1994-12-27
申请号：US62573
申请日：1993-05-18
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
摘要翻译：使用模板掩模来使用透射通过模板掩模的带电粒子束将晶片上的图案曝光。模板掩模由板形成，并且至少形成在板上的块图案区域。块图案区域包括任意形状的孔，用于传送在带电粒子束的一个镜头中照射块图案区域内的孔的带电粒子束。块图案区域形成块掩模，其中相对于孔中的至少预定孔设置一对相对的消隐电极。

32. 发明授权

US5225684A Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
标题翻译：带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法
公开(公告)号：US5225684A
公开(公告)日：1993-07-06
申请号：US948475
申请日：1992-09-22
申请人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
发明人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/1504 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).
摘要翻译：带电粒子束曝光系统朝向连续移动的曝光物体（18）发射并偏转电子束（11a），并将半导体集成电路图案拉到物体上。该系统包括带电粒子束产生单元（11），用于偏转电子束（11a）的第一和第二偏转器（12和13），第一和第二偏转器驱动器（14和15），用于控制第一和第二偏转器（12和13），用于控制物体（18）的移动的平台驱动和控制单元（16），以及用于控制各个部件的输入和输出的控制器（17）。第二偏转器驱动器（15）至少包括用于接收主偏转器数据（MD1）和平台位置数据（STD）并提供校正的主偏转器数据（MD2）的数据校正单元（15A），偏转信号输出单元（15B）用于根据主偏转器数据（MD2）提供主偏转器设定信号（S1），用于根据主偏转器数据（MD2）产生第一脉冲信号（PS1）的第一等待时间发生器（15C），第二等待用于与第一脉冲信号（PS1）同步地产生第二脉冲信号（PS2）的时间发生器（15D）和用于将第一和第二脉冲信号（PS1和PS2）彼此比较的比较器（15E）绘图开始信号（S3）。

33. 发明授权

US5051556A Charged particle beam lithography system and a method thereof 失效
标题翻译：带电粒子束光刻系统及其方法
公开(公告)号：US5051556A
公开(公告)日：1991-09-24
申请号：US429500
申请日：1989-10-31
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/15 , H01J2237/30411 , H01J2237/31776
摘要： A charged particle beam lithography system comprises a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is moved over the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask, wherein the addressing system comprises an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through selected one of the plurality of apertures except for the predetermined aperture.
摘要翻译：带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的束形成孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交叉点光轴，第二聚焦系统，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间，用于偏转电子束的光束偏转系统，使得光束在该光轴上移动物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束通过掩模上的选定孔径，其中寻址系统包括用于可变成形带电粒子束和电磁体的静电偏转器用于偏转带电粒子束，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的选定的一个孔。

34. 发明授权

US5023462A Photo-cathode image projection apparatus for patterning a semiconductor device 失效
标题翻译：用于图案化半导体器件的光阴图像投影设备
公开(公告)号：US5023462A
公开(公告)日：1991-06-11
申请号：US327728
申请日：1989-03-23
申请人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
发明人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70375 , G03F7/70725 , H01J37/3175 , H01J2237/0206 , H01J2237/0262 , H01J2237/153 , H01J2237/303 , H01J2237/30455 , H01J2237/31779
摘要： A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

35. 发明授权

US4980567A Charged particle beam exposure system using line beams 失效
标题翻译：使用线束的带电粒子束曝光系统
公开(公告)号：US4980567A
公开(公告)日：1990-12-25
申请号：US329833
申请日：1989-03-28
申请人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： In a charged particle beam exposure system, a line of individual blanking apertures (39.sub.0 to 39.sub.255) is provided to form a line of beams which are individually blanked and unblanked by applying voltages to electrodes within the blanking apertures.

36. 发明授权

US08536002B2 Bipolar transistor in bipolar-CMOS technology 有权
标题翻译：双极晶体管在双极CMOS技术
公开(公告)号：US08536002B2
公开(公告)日：2013-09-17
申请号：US13567552
申请日：2012-08-06
申请人： Hiroshi Yasuda , Berthold Staufer
发明人： Hiroshi Yasuda , Berthold Staufer
IPC分类号： H01L21/8238
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/1004 , H01L29/66287 , H01L29/732 , H01L29/7833
摘要： A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.
摘要翻译：通过使用非选择性外延工艺形成双极型晶体管的基极层，使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层，形成包含双极晶体管和MOS晶体管的集成电路的工艺区域，并且同时注入基极层的MOS栅极层和多晶区域，使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中，并且垂直累积掺杂基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80％至125％之间。包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

37. 发明授权

US08450179B2 Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication 有权
标题翻译：具有第一双极器件和第二双极器件的半导体器件及其制造方法
公开(公告)号：US08450179B2
公开(公告)日：2013-05-28
申请号：US11670729
申请日：2007-02-02
申请人： Badih El-Kareh , Hiroshi Yasuda , Scott Balster
发明人： Badih El-Kareh , Hiroshi Yasuda , Scott Balster
IPC分类号： H01L21/331
CPC分类号： H01L29/7378 , H01L21/8222 , H01L21/8249 , H01L27/0825 , H01L29/66242
摘要： A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.
摘要翻译：一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括：在半导体层上沉积介电层，在电介质层上沉积栅极导体层，限定两个双极器件的基极区域，栅极导体层和电介质层，在栅极导体层和基极区域的暴露的半导体层上沉积基底层，在基底层上沉积绝缘层，形成光致抗蚀剂层并限定两者的发射极区域去除发射极区域中的光致抗蚀剂层，从而形成两个发射器窗口，掩蔽第一双极器件的发射极窗口，并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入。

38. 发明授权

US08222619B2 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
标题翻译：多列电子束曝光装置和多列电子束曝光方法
公开(公告)号：US08222619B2
公开(公告)日：2012-07-17
申请号：US12586717
申请日：2009-09-25
申请人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
发明人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542
摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要翻译：多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质细胞可以大致相同。电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

39. 发明申请

US20110226967A1 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US20110226967A1
公开(公告)日：2011-09-22
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

40. 发明申请

US20110057289A1 Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing 有权
标题翻译：使用ALD和高温短时退火的超短发射体形成
公开(公告)号：US20110057289A1
公开(公告)日：2011-03-10
申请号：US12718142
申请日：2010-03-05
申请人： Rick L. Wise , Hiroshi Yasuda
发明人： Rick L. Wise , Hiroshi Yasuda
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/36 , H01L21/02063 , H01L21/2254 , H01L29/66242 , H01L29/66272 , H01L29/73 , H01L29/7325
摘要： An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.
摘要翻译：一种包含双极晶体管的集成电路，其包括具有高于1×1020原子/ cm3的峰值掺杂密度的发射极扩散区域，以及在基极层中小于40纳米深的发射极 - 基极结。一种形成双极晶体管的工艺，其包括在基极层和发射极层之间形成发射极掺杂剂原子层，随后进行闪光或激光退火步骤，以将掺杂剂原子从发射极掺杂剂原子层扩散到基底层中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式