专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5225684A Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
标题翻译：带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法
公开(公告)号：US5225684A
公开(公告)日：1993-07-06
申请号：US948475
申请日：1992-09-22
申请人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
发明人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/1504 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).
摘要翻译：带电粒子束曝光系统朝向连续移动的曝光物体（18）发射并偏转电子束（11a），并将半导体集成电路图案拉到物体上。该系统包括带电粒子束产生单元（11），用于偏转电子束（11a）的第一和第二偏转器（12和13），第一和第二偏转器驱动器（14和15），用于控制第一和第二偏转器（12和13），用于控制物体（18）的移动的平台驱动和控制单元（16），以及用于控制各个部件的输入和输出的控制器（17）。第二偏转器驱动器（15）至少包括用于接收主偏转器数据（MD1）和平台位置数据（STD）并提供校正的主偏转器数据（MD2）的数据校正单元（15A），偏转信号输出单元（15B）用于根据主偏转器数据（MD2）提供主偏转器设定信号（S1），用于根据主偏转器数据（MD2）产生第一脉冲信号（PS1）的第一等待时间发生器（15C），第二等待用于与第一脉冲信号（PS1）同步地产生第二脉冲信号（PS2）的时间发生器（15D）和用于将第一和第二脉冲信号（PS1和PS2）彼此比较的比较器（15E）绘图开始信号（S3）。

2. 发明授权

US5134300A Method and apparatus for controlling charged particle beams in charged particle beam exposure system 失效
标题翻译：用于控制带电粒子束曝光系统中带电粒子束的方法和装置
公开(公告)号：US5134300A
公开(公告)日：1992-07-28
申请号：US751588
申请日：1991-08-22
申请人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki
发明人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki
IPC分类号： H01J37/302
CPC分类号： H01J37/3026
摘要： A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.
摘要翻译：带电粒子束曝光系统采用连续移动平台技术和双偏转技术。系统稳定地偏转带电粒子束，并将样品可靠地暴露于没有溢流的光束。该系统将一个主偏转器从样本上的另一个子场的一个子场的正确位置移动到对应于主偏转器的子场到子场跳跃通常需要的建立时间的时间段，然后将样本曝光梁。

3. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

4. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

5. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

6. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

7. 发明授权

US5434795A Method of forming pattern having optical angle in charged particle exposure system 失效
标题翻译：在带电粒子曝光系统中形成具有光学角度的图案的方法
公开(公告)号：US5434795A
公开(公告)日：1995-07-18
申请号：US286254
申请日：1994-08-08
申请人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Kenichi Miyazawa
发明人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Kenichi Miyazawa
IPC分类号： H01J37/302
CPC分类号： H01J37/3026 , H01J2237/31764
摘要： A charged particle exposure system uses a method for accurately and efficiently generating a required pattern having an optional angle .theta.. The method uses a reference isosceles right triangle. According to the reference triangle, a plurality of rectangular beams are formed. Each of the rectangular beams is multiplied by tan .theta. of the optional angle .theta., thereby preparing data of beams necessary for forming the required pattern.
摘要翻译：带电粒子曝光系统使用准确且有效地产生具有任选角度θ的所需图案的方法。该方法使用参考等腰直角三角形。根据参考三角形，形成多个矩形梁。每个矩形光束乘以可选角度θ的tanθ，从而准备形成所需图案所需的光束数据。

8. 发明授权

US5329130A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5329130A
公开(公告)日：1994-07-12
申请号：US924638
申请日：1992-08-04
申请人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Mitsuhiro Nakano
发明人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Mitsuhiro Nakano
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30455 , H01J2237/30488 , H01J2237/31766
摘要： A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.
摘要翻译：使用带电粒子束曝光方法通过偏转带电粒子束在连续移动的台上承载的基板上绘制图案。该方法包括在平行于基板的坐标系的轴的方向上移动平台; 通过获得包括相对于舞台的目标位置的要绘制的图案的图案区域的基准位置的位置坐标，并且获得坐标系的第二偏转数据D2，从而在舞台的坐标系中产生第一偏转数据D1 描述从图案所属的图案区域的参考位置绘制的图案的位置坐标的基板的系统; 对于第一偏转数据D1执行包括对带电粒子束曝光装置固有的图案失真的校正的第一校正操作，并且在进行第一校正操作和关于第二偏转数据D2的第二校正操作之后坐标转换到舞台的坐标系，其中第二校正操作校正相对于由衬底的移动引起的舞台的旋转误差分量; 获得第三偏转数据D3'，其通过加上校正的第一偏转数据D1'和校正的第二偏转数据D2'来描述从舞台的当前位置绘制的图案的位置坐标; 以及基于第三偏转数据D3'控制偏转器。

9. 发明授权

US5719402A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5719402A
公开(公告)日：1998-02-17
申请号：US626906
申请日：1996-04-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/12 , H01J37/141
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

10. 发明授权

US4980567A Charged particle beam exposure system using line beams 失效
标题翻译：使用线束的带电粒子束曝光系统
公开(公告)号：US4980567A
公开(公告)日：1990-12-25
申请号：US329833
申请日：1989-03-28
申请人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： In a charged particle beam exposure system, a line of individual blanking apertures (39.sub.0 to 39.sub.255) is provided to form a line of beams which are individually blanked and unblanked by applying voltages to electrodes within the blanking apertures.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式