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    • 8. 发明授权
    • Charged particle beam lithography system and method
    • 带电粒子束光刻系统及方法
    • US5173582A
    • 1992-12-22
    • US585777
    • 1990-09-20
    • Kiichi SakamotoHiroshi YasudaAkio Yamada
    • Kiichi SakamotoHiroshi YasudaAkio Yamada
    • H01J37/317
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/15H01J2237/30411H01J2237/31776
    • A charged particle beam lithography system includes a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is displaced on the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and an addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask. The addressing system includes an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through a selected one of the plurality of apertures except for the predetermined aperture.
    • 带电粒子束光刻系统包括带电粒子束的束源,用于向带电粒子束提供预定横截面的光束整形孔;第一聚焦系统,用于将带电粒子束聚焦在位于所述带电粒子束上的第一交越点 光轴,设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间的第二聚焦系统,用于偏转电子束的光束偏转系统,使得光束在 物体的表面,用于支撑物体的台,设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统,使得带电粒子束穿过掩模上的选定孔径 。 寻址系统包括用于带电粒子束的可变成形的静电偏转器和用于偏转带电粒子束的电磁偏转器,使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的所选择的孔中。