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31. 发明授权

US5180919A Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam 失效
标题翻译：具有检查用于成形电子束的电子掩模的图案的能力的电子束曝光系统
公开(公告)号：US5180919A
公开(公告)日：1993-01-19
申请号：US761454
申请日：1991-09-18
申请人： Yoshihisa Oae , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Yoshihisa Oae , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/0451 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of the aperture of the beam shaping means through which the electron beam has passed is projected on the screen when checking the pattern of the apertures on the block mask, and a detection unit for detecting the image of the aperture that is projected on the screen.
摘要翻译：具有检查要写在物体上的图案的能力的电子束曝光系统包括用于沿着光轴向物体产生电子束的电子束源，设置在光轴上并具有可选孔径图案的块掩模为了对应地形成电子束，用于选择性地使电子束通过块掩模上的所需孔的寻址偏转器固定装置，用于将由掩模掩模形成的电子束聚焦在物体上的电子光学系统，使得孔径的图像块屏蔽物投影在物体上，当电子束偏离与光轴对准时，沿着光轴设置在屏蔽掩模和物体之间的屏幕，用于中断电子束，屏幕具有通孔与用于使电子束通过的光轴对准用于控制电子光学系统的控制器使得当检查块掩模上的孔的图案时，电子束已经通过的光束整形装置的孔径的图像被投影在屏幕上;以及检测单元，用于检测投影的光圈的图像屏幕上。

32. 发明授权

US5175435A Electron beam exposure system with increased efficiency of exposure operation 失效
标题翻译：电子束曝光系统具有更高的曝光效率
公开(公告)号：US5175435A
公开(公告)日：1992-12-29
申请号：US782251
申请日：1991-10-25
申请人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30422 , H01J2237/31776
摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.
摘要翻译：电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据，第一和第二图案数据的时间顺序混合。将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径模式数据，传输到另一个输出路径。由此，第一和第二图案数据形成并行数据。这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

33. 发明授权

US5376802A Stencil mask and charge particle beam exposure method and apparatus using the stencil mask 失效
标题翻译：模板掩模和带电粒子束曝光方法和使用模板掩模的装置
公开(公告)号：US5376802A
公开(公告)日：1994-12-27
申请号：US62573
申请日：1993-05-18
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
摘要翻译：使用模板掩模来使用透射通过模板掩模的带电粒子束将晶片上的图案曝光。模板掩模由板形成，并且至少形成在板上的块图案区域。块图案区域包括任意形状的孔，用于传送在带电粒子束的一个镜头中照射块图案区域内的孔的带电粒子束。块图案区域形成块掩模，其中相对于孔中的至少预定孔设置一对相对的消隐电极。

34. 发明授权

US5225684A Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
标题翻译：带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法
公开(公告)号：US5225684A
公开(公告)日：1993-07-06
申请号：US948475
申请日：1992-09-22
申请人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
发明人： Kazutaka Taki , Hiroshi Yasuda , Junichi Kai , Atsushi Saito , Kiichi Sakamoto
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/1504 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).
摘要翻译：带电粒子束曝光系统朝向连续移动的曝光物体（18）发射并偏转电子束（11a），并将半导体集成电路图案拉到物体上。该系统包括带电粒子束产生单元（11），用于偏转电子束（11a）的第一和第二偏转器（12和13），第一和第二偏转器驱动器（14和15），用于控制第一和第二偏转器（12和13），用于控制物体（18）的移动的平台驱动和控制单元（16），以及用于控制各个部件的输入和输出的控制器（17）。第二偏转器驱动器（15）至少包括用于接收主偏转器数据（MD1）和平台位置数据（STD）并提供校正的主偏转器数据（MD2）的数据校正单元（15A），偏转信号输出单元（15B）用于根据主偏转器数据（MD2）提供主偏转器设定信号（S1），用于根据主偏转器数据（MD2）产生第一脉冲信号（PS1）的第一等待时间发生器（15C），第二等待用于与第一脉冲信号（PS1）同步地产生第二脉冲信号（PS2）的时间发生器（15D）和用于将第一和第二脉冲信号（PS1和PS2）彼此比较的比较器（15E）绘图开始信号（S3）。

35. 发明授权

US4980567A Charged particle beam exposure system using line beams 失效
标题翻译：使用线束的带电粒子束曝光系统
公开(公告)号：US4980567A
公开(公告)日：1990-12-25
申请号：US329833
申请日：1989-03-28
申请人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Junichi Kai , Toyotaka Kataoka , Yasushi Takahashi , Shinji Miyaki , Kiichi Sakamoto
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： In a charged particle beam exposure system, a line of individual blanking apertures (39.sub.0 to 39.sub.255) is provided to form a line of beams which are individually blanked and unblanked by applying voltages to electrodes within the blanking apertures.

36. 发明授权

US08222619B2 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
标题翻译：多列电子束曝光装置和多列电子束曝光方法
公开(公告)号：US08222619B2
公开(公告)日：2012-07-17
申请号：US12586717
申请日：2009-09-25
申请人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
发明人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542
摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要翻译：多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质细胞可以大致相同。电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

37. 发明申请

US20110226967A1 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US20110226967A1
公开(公告)日：2011-09-22
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

38. 发明授权

US07847272B2 Electron beam exposure mask, electron beam exposure method, and electron beam exposure system 有权
标题翻译：电子束曝光掩模，电子束曝光法和电子束曝光系统
公开(公告)号：US07847272B2
公开(公告)日：2010-12-07
申请号：US11235422
申请日：2005-09-26
申请人： Hiroshi Yasuda , Akio Yamada
发明人： Hiroshi Yasuda , Akio Yamada
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J2237/31769
摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
摘要翻译：电子束曝光系统设计用于校正邻近效应。电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。

39. 发明授权

US5444257A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5444257A
公开(公告)日：1995-08-22
申请号：US319022
申请日：1994-10-06
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

40. 发明授权

US06175121B1 Block mask and charged particle beam exposure method and apparatus using the same 有权
标题翻译：阻挡掩模和带电粒子束曝光方法及使用其的装置
公开(公告)号：US06175121B1
公开(公告)日：2001-01-16
申请号：US09159603
申请日：1998-09-24
申请人： Akio Yamada , Hiroshi Yasuda
发明人： Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J37302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/16 , G03F7/2037 , H01J37/3026 , H01J2237/31764 , H01J2237/31767 , H01J2237/31776 , H01J2237/31788 , H01L21/0279
摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.
摘要翻译：使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。第二块掩模图案组被布置为与第一块掩模图案组相邻。

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