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1. 发明授权

US08222619B2 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
标题翻译：多列电子束曝光装置和多列电子束曝光方法
公开(公告)号：US08222619B2
公开(公告)日：2012-07-17
申请号：US12586717
申请日：2009-09-25
申请人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
发明人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542
摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要翻译：多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质细胞可以大致相同。电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

2. 发明申请

US20110226967A1 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US20110226967A1
公开(公告)日：2011-09-22
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

3. 发明授权

US07847272B2 Electron beam exposure mask, electron beam exposure method, and electron beam exposure system 有权
标题翻译：电子束曝光掩模，电子束曝光法和电子束曝光系统
公开(公告)号：US07847272B2
公开(公告)日：2010-12-07
申请号：US11235422
申请日：2005-09-26
申请人： Hiroshi Yasuda , Akio Yamada
发明人： Hiroshi Yasuda , Akio Yamada
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J2237/31769
摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
摘要翻译：电子束曝光系统设计用于校正邻近效应。电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。

4. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

5. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

6. 发明授权

US5444257A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5444257A
公开(公告)日：1995-08-22
申请号：US319022
申请日：1994-10-06
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

7. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

8. 发明申请

US20060115745A1 Electron beam exposure mask, electron beam exposure method, and electron beam exposure system 有权
标题翻译：电子束曝光掩模，电子束曝光法和电子束曝光系统
公开(公告)号：US20060115745A1
公开(公告)日：2006-06-01
申请号：US11235422
申请日：2005-09-26
申请人： Hiroshi Yasuda , Akio Yamada
发明人： Hiroshi Yasuda , Akio Yamada
IPC分类号： G03F1/00 , G03C5/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J2237/31769
摘要： An electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions for proximity effect correction, which opening portions are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting the electron beam passed through the exposure mask and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
摘要翻译：电子束曝光系统包括：用于产生电子束的电子束产生单元; 具有用于邻近效应校正的开口部分的电子束曝光掩模，所述开口部分布置成使得开口部分的尺寸按照预定的顺序排列; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于偏转通过曝光掩模的电子束并将电子束投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。

9. 发明授权

US5949078A Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5949078A
公开(公告)日：1999-09-07
申请号：US131368
申请日：1998-08-07
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower that the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.
摘要翻译：用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有基本上在所述光束轴上的第一孔，并且施加有高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压以控制所述第一电压的电流阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

10. 发明授权

US5808313A Charged particle beam exposure method and charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光方法和带电粒子束曝光装置
公开(公告)号：US5808313A
公开(公告)日：1998-09-15
申请号：US892976
申请日：1997-07-15
申请人： Akio Yamada , Hiroshi Yasuda , Hidefumi Yabara , Atsushi Saito
发明人： Akio Yamada , Hiroshi Yasuda , Hidefumi Yabara , Atsushi Saito
IPC分类号： H01L21/027 , H01J37/304 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： The object of the present invention is to ensure a correct exposure even when a single exposure apparatus is used to expose a predetermined pattern, and an exposure apparatus therefor. According to the present invention, a charged particle beam exposure method, wherein a charged particle beam having a predetermined shape is irradiated to a sample to have the surface of the sample be exposed, comprises the steps of: storing a record of a first quantity of reflected electrons or a first sample current, which is detected in accordance with the charged particle beam irradiatd to the sample when a first exposure pattern is formed in a first area of the sample; and comparing a second quantity of reflected electrons or a second sample current, which is detected in accordance with the charged particle beam irradiated to the sample when the first exposure pattern is formed in a second area of the sample, with the first quantity of the reflected electrons or the first sample current which is stored when the first area is exposed, and generating a matched or unmatched signal therefor.
摘要翻译：本发明的目的在于即使使用单一的曝光装置来曝光预定图案也能确保正确的曝光及其曝光装置。根据本发明，一种带电粒子束曝光方法，其中对样品照射具有预定形状的带电粒子束以暴露样品的表面，包括以下步骤：将第一量的反射电子或第一样品电流，当在样品的第一区域中形成第一曝光图案时，其根据被照射到样品的带电粒子束来检测; 并且比较第二量的反射电子或第二样品电流，其在样品的第二区域中形成第一曝光图案时根据照射到样品的带电粒子束检测到的第一数量的反射电子或第二样品电流，电子或第一采样电流，其在第一区域被暴露时存储，并且产生匹配或不匹配的信号。

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