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1. 发明授权

US5175435A Electron beam exposure system with increased efficiency of exposure operation 失效
标题翻译：电子束曝光系统具有更高的曝光效率
公开(公告)号：US5175435A
公开(公告)日：1992-12-29
申请号：US782251
申请日：1991-10-25
申请人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Shunsuke Fueki , Hiroshi Yasuda
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30422 , H01J2237/31776
摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.
摘要翻译：电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据，第一和第二图案数据的时间顺序混合。将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径模式数据，传输到另一个输出路径。由此，第一和第二图案数据形成并行数据。这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

2. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

3. 发明授权

US5262341A Blanking aperture array and charged particle beam exposure method 失效
标题翻译：消隐孔径阵列和带电粒子束曝光方法
公开(公告)号：US5262341A
公开(公告)日：1993-11-16
申请号：US991718
申请日：1992-12-16
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302 , H01L21/268
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.
摘要翻译：用于带电粒子束曝光的消隐孔径阵列具有衬底，至少m行×n列的孔在衬底中二维布置，其中每个孔具有一对消隐电极，m和n是整数大于1和n个m位移位寄存器，其设置在基板上，用于将第n列中的孔的m对对的图案数据施加电压，其中i = 1,2。。。，n。图案数据与使用消隐孔径阵列曝光的图案有关。

4. 发明授权

US5144142A Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method 失效
标题翻译：空白孔阵列，生产空隙阵列的方法，充电颗粒光束曝光装置和充电颗粒光束曝光方法
公开(公告)号：US5144142A
公开(公告)日：1992-09-01
申请号：US525062
申请日：1990-05-18
申请人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
发明人： Shunsuke Fueki , Hiroshi Yasuda , Kiichi Sakamoto , Yasushi Takahashi
IPC分类号： H01J37/04 , H01J37/302
CPC分类号： H01J37/045 , H01J37/3026
摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is relates to a pattern which is to be exposed using the blanking aperture array.

5. 发明授权

US5130547A Charged-particle beam exposure method and apparatus 失效
标题翻译：充电颗粒光束曝光方法和装置
公开(公告)号：US5130547A
公开(公告)日：1992-07-14
申请号：US616870
申请日：1990-11-21
申请人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
IPC分类号： G05B19/408 , H01J37/302
CPC分类号： H01J37/3026 , G05B19/408 , G05B2219/35567
摘要： A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.

6. 发明授权

US5824437A Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
标题翻译：掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置
公开(公告)号：US5824437A
公开(公告)日：1998-10-20
申请号：US685958
申请日：1996-07-22
申请人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.
摘要翻译：用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形的电子束通过其中以使物体上的相应图案曝光。每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸，同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。

7. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

8. 发明授权

US5590048A Block exposure pattern data extracting system and method for charged particle beam exposure 失效
标题翻译：块曝光图案数据提取系统和带电粒子束曝光的方法
公开(公告)号：US5590048A
公开(公告)日：1996-12-31
申请号：US71262
申请日：1993-06-04
申请人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
发明人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
IPC分类号： H01J37/302 , G06F17/50 , G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/0458 , H01J2237/31776
摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.
摘要翻译：在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。确定单元确定第一矢量是否与第二矢量一致。当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

9. 发明授权

US5234781A Mask for lithographic patterning and a method of manufacturing the same 失效
标题翻译：光刻图案用掩模及其制造方法
公开(公告)号：US5234781A
公开(公告)日：1993-08-10
申请号：US877396
申请日：1992-04-30
申请人： Kiichi Sakamoto , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20
CPC分类号： G03F1/20
摘要： A mask for lithographic patterning comprises a base body provided with a through hole passing from a top side to a bottom side thereof, a mask layer provided on the top side of the base body so as to close the through hole, the mask layer being defined by a substantially flat top surface and a substantially flat bottom surface and having a thickness ranging from about 2 .mu.m to about 20 .mu.m, and a plurality of patterned apertures provided on the mask layer at a part closing the through hole.
摘要翻译：用于平版印刷图案的掩模包括设置有从顶侧到底侧的通孔的基体，设置在基体的顶侧上以封闭通孔的掩模层，掩模层被限定通过基本上平坦的顶表面和基本上平坦的底表面并且具有约2μm至约20μm的厚度，以及在封闭通孔的部分处在掩模层上设置的多个图案孔。

10. 发明授权

US4954717A Photoelectron mask and photo cathode image projection method using the same 失效
标题翻译：光电子掩模和光阴极图像投影方法使用相同
公开(公告)号：US4954717A
公开(公告)日：1990-09-04
申请号：US283982
申请日：1988-12-13
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada , Jinko Kudou
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada , Jinko Kudou
IPC分类号： G03F1/00 , G03F7/20 , H01J1/34 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J1/34 , H01J37/3175 , H01J2201/3425 , H01J2237/31779
摘要： A photoelectron mask for photo cathode image projection includes a transparent substrate, and a pattern formed on a main surface of the transparent substrate. The pattern includes a non-transparent material. The mask also includes a photoelectron emission film formed so as to cover the main surface of the transparent substrate on which the pattern is formed. The photoelectron emission film includes a material selected from the group consisting of pure platinum, a platinum-rich material containing platinum as the major component, and a platinum compound.

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