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1. 发明授权

US5288567A Stencil mask and charged particle beam exposure method and apparatus using the stencil mask 失效
公开(公告)号：US5288567A
公开(公告)日：1994-02-22
申请号：US718433
申请日：1991-06-20
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.

2. 发明授权

US5180919A Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam 失效
标题翻译：具有检查用于成形电子束的电子掩模的图案的能力的电子束曝光系统
公开(公告)号：US5180919A
公开(公告)日：1993-01-19
申请号：US761454
申请日：1991-09-18
申请人： Yoshihisa Oae , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Yoshihisa Oae , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/0451 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of the aperture of the beam shaping means through which the electron beam has passed is projected on the screen when checking the pattern of the apertures on the block mask, and a detection unit for detecting the image of the aperture that is projected on the screen.
摘要翻译：具有检查要写在物体上的图案的能力的电子束曝光系统包括用于沿着光轴向物体产生电子束的电子束源，设置在光轴上并具有可选孔径图案的块掩模为了对应地形成电子束，用于选择性地使电子束通过块掩模上的所需孔的寻址偏转器固定装置，用于将由掩模掩模形成的电子束聚焦在物体上的电子光学系统，使得孔径的图像块屏蔽物投影在物体上，当电子束偏离与光轴对准时，沿着光轴设置在屏蔽掩模和物体之间的屏幕，用于中断电子束，屏幕具有通孔与用于使电子束通过的光轴对准用于控制电子光学系统的控制器使得当检查块掩模上的孔的图案时，电子束已经通过的光束整形装置的孔径的图像被投影在屏幕上;以及检测单元，用于检测投影的光圈的图像屏幕上。

3. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

4. 发明授权

US5590048A Block exposure pattern data extracting system and method for charged particle beam exposure 失效
标题翻译：块曝光图案数据提取系统和带电粒子束曝光的方法
公开(公告)号：US5590048A
公开(公告)日：1996-12-31
申请号：US71262
申请日：1993-06-04
申请人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
发明人： Tomohiko Abe , Hiroshi Yasuda , Kiichi Sakamoto , Yoshihisa Oae
IPC分类号： H01J37/302 , G06F17/50 , G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/0458 , H01J2237/31776
摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.
摘要翻译：在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。确定单元确定第一矢量是否与第二矢量一致。当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

5. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

6. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

7. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

8. 发明授权

US5719402A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5719402A
公开(公告)日：1998-02-17
申请号：US626906
申请日：1996-04-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/12 , H01J37/141
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

9. 发明授权

US5376802A Stencil mask and charge particle beam exposure method and apparatus using the stencil mask 失效
标题翻译：模板掩模和带电粒子束曝光方法和使用模板掩模的装置
公开(公告)号：US5376802A
公开(公告)日：1994-12-27
申请号：US62573
申请日：1993-05-18
申请人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yasushi Takahashi , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F1/20 , G03F7/20 , H01J37/04 , H01J37/317 , H01L21/30 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/045 , H01J37/3174
摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
摘要翻译：使用模板掩模来使用透射通过模板掩模的带电粒子束将晶片上的图案曝光。模板掩模由板形成，并且至少形成在板上的块图案区域。块图案区域包括任意形状的孔，用于传送在带电粒子束的一个镜头中照射块图案区域内的孔的带电粒子束。块图案区域形成块掩模，其中相对于孔中的至少预定孔设置一对相对的消隐电极。

10. 发明授权

US5401974A Charged particle beam exposure apparatus and method of cleaning the same 失效
标题翻译：带电粒子束曝光装置及其清洗方法
公开(公告)号：US5401974A
公开(公告)日：1995-03-28
申请号：US191458
申请日：1994-02-03
申请人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
发明人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
IPC分类号： H01J37/30 , H05H1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3002 , H01J37/32082 , H01J37/32862 , H01J2237/022 , H01J2237/3175
摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
摘要翻译：在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元，将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。

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