专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07726009B1 Method of fabricating a perpendicular recording write head having a gap with two portions 失效
标题翻译：制造具有两部分间隙的垂直记录写头的方法
公开(公告)号：US07726009B1
公开(公告)日：2010-06-01
申请号：US11779218
申请日：2007-07-17
申请人： Yinshi Liu , Benjamin Chen , Kyusik Sin , Hongping Yuan
发明人： Yinshi Liu , Benjamin Chen , Kyusik Sin , Hongping Yuan
IPC分类号： G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/235 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49052
摘要： A method of fabricating a write head for perpendicular recording includes forming a pole layer on an undercoat layer, forming a mask over at least a portion of the pole layer, and forming the pole by removing material from the pole layer. The method further includes forming a first gap portion of a gap along a first side and a second side of the pole, forming a protective layer over at least a portion of the first gap portion, removing the mask, and removing the protective layer. The method further includes forming a second gap portion of the gap over at least a top surface of the pole and forming a shield over at least the second gap portion.
摘要翻译：制造用于垂直记录的写头的方法包括在底涂层上形成极层，在极层的至少一部分上形成掩模，并通过从极层去除材料形成极。所述方法还包括沿着所述极的第一侧和第二侧形成间隙的第一间隙部分，在所述第一间隙部分的至少一部分上形成保护层，去除所述掩模，以及去除所述保护层。该方法还包括在极的至少顶表面上形成间隙的第二间隙部分，并在至少第二间隙部分上形成屏蔽。

32. 发明授权

US06707083B1 Magnetic tunneling junction with improved power consumption 有权
标题翻译：磁隧道结，具有改善的功耗
公开(公告)号：US06707083B1
公开(公告)日：2004-03-16
申请号：US10192458
申请日：2002-07-09
申请人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
发明人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
IPC分类号： H01L31119
CPC分类号： G11C11/16 , H01L27/222
摘要： A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.
摘要翻译：公开了一种用于提供磁隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁隧道结耦合到位线。位线包括铁磁衬垫和非磁性芯。非磁性芯包括顶部，底部和侧面。铁磁衬垫包括至少一个突片，并且与非磁性芯的侧面和底部的一部分相邻。至少一个突片邻近非磁性芯的底部的部分。

33. 发明授权

US06683763B1 Method and system for providing a self-aligned electrical contact for a TMR element 失效
标题翻译：用于为TMR元件提供自对准电接触的方法和系统
公开(公告)号：US06683763B1
公开(公告)日：2004-01-27
申请号：US09990738
申请日：2001-11-21
申请人： Hugh C. Hiner , Kyusik Sin , William Jensen , Xizeng Shi
发明人： Hugh C. Hiner , Kyusik Sin , William Jensen , Xizeng Shi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/06 , G11B5/3909 , H01F10/3254 , H01F41/308 , H01L43/12
摘要： A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material. The second material allows electrical contact to be made to the tunneling magnetoresistive layer and is resistant to removal by the plasma etch.
摘要翻译：公开了一种用于提供隧道磁阻（TMR）元件的方法和结构。该方法和结构包括提供包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一绝缘层的TMR层。该方法和结构还包括提供第一材料和保护层。第一材料允许对隧道磁阻层进行电接触并且设置在隧道磁阻层之上。第一种材料能够通过等离子体蚀刻而被切割，而不会在隧道磁阻层的一部分暴露在第一材料的剩余部分之下。第二保护层覆盖隧道磁阻传感器的一部分和第一材料的一部分。一方面，该方法和结构还包括提供设置在隧道磁阻层和第一材料之间的第二材料。第二种材料允许对隧道磁阻层进行电接触，并且耐受等离子体蚀刻的去除。

34. 发明授权

US06381095B1 High performance thin film magnetic write element having high Bsat poles and method for making same 失效
标题翻译：具有高Bsat极的高性能薄膜磁性写入元件及其制造方法
公开(公告)号：US06381095B1
公开(公告)日：2002-04-30
申请号：US09386889
申请日：1999-08-31
申请人： Kyusik Sin , Ronald Barr
发明人： Kyusik Sin , Ronald Barr
IPC分类号： G11B5147
CPC分类号： G11B5/313 , G11B5/3133 , G11B5/3146 , G11B5/3163
摘要： A high performance magnetic write element incorporated in a read/write head having a lower pole including high Bsat back gap and write gap pedestals. The write element further including an upper pole connected with the lower pole to form a yoke and a coil disposed within the yoke and enclosed covered with a write gap material and surrounded by insulating material. The write gap material provides separation between the first and second poles at one end of the yoke to form a write gap therebetween. A method of forming the write element of the present invention includes forming the first pole and building thereupon a back gap pedestal and a write gap pedestal at back and front ends of the first pole respectively. A dielectric layer is deposited on top of the first pole and planarized to have an upper surface coplanar with the top of the first and second pedestals. Upon the dielectric layer the coil is formed on which is deposited the write gap material. The write gap material is deposited so as to cover both the back gap and write gap pedestals. An insulation layer is deposited over the write gap material and masked to avoid covering the pedestals. After curing the insulation layer, an etching process removes at the location of the back gap material. The upper pole can then be formed onto the structure to form the yoke. Covering back gap pedestal with write gap material until the insulation has been cured effectively prevents corrosion of the back gap pedestal which would otherwise be caused by the high temperatures necessary to cure the insulation layer.
摘要翻译：一种结合在读/写头中的高性能磁写元件，其具有包括高Bsat后间隙和写间隙基座的下极。所述写入元件还包括与所述下极连接的上极，以形成轭，所述线圈设置在所述轭内，并被封闭地覆盖有写入间隙材料并被绝缘材料包围。写间隙材料提供在轭的一端处的第一和第二极之间的间隔，以在它们之间形成写入间隙。形成本发明的写入元件的方法包括分别在第一极的后端和前端形成第一极和其后面的后间隙基座和写间隙基座。电介质层沉积在第一极的顶部上并且被平坦化以具有与第一和第二基座的顶部共面的上表面。在电介质层上形成有在其上沉积写间隙材料的线圈。写入间隙材料被沉积以覆盖后部间隙和写入间隙基座。绝缘层沉积在写入间隙材料上并被掩蔽以避免覆盖基座。在固化绝缘层之后，在后隙材料的位置处去除蚀刻工艺。然后可以将上极形成在结构上以形成轭。用间隙材料覆盖背面间隙基座直到绝缘体已经被固化有效地防止背面间隙基座的腐蚀，否则这将由固化绝缘层所需的高温引起。

35. 发明授权

US07134185B1 Method of making narrow track width magnetoresistive sensor 有权
标题翻译：制造窄轨宽磁阻传感器的方法
公开(公告)号：US07134185B1
公开(公告)日：2006-11-14
申请号：US10752283
申请日：2004-01-05
申请人： Kenneth E. Knapp , Kyusik Sin
发明人： Kenneth E. Knapp , Kyusik Sin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for forming a microscopic transducer are described. The method and system include forming a plurality of adjoining sensor layers. The sensor layers include a first magnetically soft layer, a nonmagnetic layer on the first magnetically soft layer, and a second magnetically soft layer on the nonmagnetic layer. The method and system also include forming a sidewall over the second magnetically soft layer. The sidewall formation includes forming a base having a surface oriented substantially perpendicular to the sensor layers and depositing an electrically conductive material on the surface. The method and system also include removing a portion of the sensor layers not covered by the sidewall.
摘要翻译：描述了用于形成微观传感器的方法和系统。该方法和系统包括形成多个邻接的传感器层。传感器层包括第一磁性软层，第一磁性软层上的非磁性层和非磁性层上的第二磁性软层。该方法和系统还包括在第二磁软层上形成侧壁。侧壁形成包括形成具有基本上垂直于传感器层定向的表面并在表面上沉积导电材料的基底。该方法和系统还包括去除未被侧壁覆盖的传感器层的一部分。

36. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

37. 发明授权

US06700759B1 Narrow track width magnetoresistive sensor and method of making 有权
标题翻译：窄轨宽磁阻传感器及其制作方法
公开(公告)号：US06700759B1
公开(公告)日：2004-03-02
申请号：US09585988
申请日：2000-06-02
申请人： Kenneth E. Knapp , Kyusik Sin
发明人： Kenneth E. Knapp , Kyusik Sin
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An electrically conductive sidewall for an electromagnetic transducer having a magnetoresistive sensor is formed as a layer oriented substantially perpendicular to other layers of the sensor, and is used as a mask for defining the width of the sensor. This allows the sensor to be made much thinner than conventional sensors, providing higher resolution in a track width direction. The sidewall can be nonmagnetic, serving as a spacer between the magnetic sensor layers and an adjacent magnetic shield without the need for a protective cap to guard against damage from polishing and wet etching. Alternatively, the sidewall can be magnetic, serving as an extension of the shield. In either case, the sidewall reduces the effective length of the sensor for linear resolution, sharpening the focus of the sensor and increasing linear density. Also reduced is the tolerance for error in sensor width and length. The combination of increased resolution in track width and track length directions provides a large increase in areal resolution, such that sensors in accordance with the present invention may be able to resolve signals at a density exceeding a terabit per square inch. A correspondingly narrow pole-tip for an inductive transducer that may be employed in conjunction with the magnetoresistive sensor is also disclosed.
摘要翻译：具有磁阻传感器的电磁换能器的导电侧壁形成为基本上垂直于传感器的其它层定向的层，并且被用作限定传感器宽度的掩模。这允许传感器比常规传感器薄得多，在轨道宽度方向上提供更高的分辨率。侧壁可以是非磁性的，用作磁性传感器层和相邻的磁屏蔽之间的间隔物，而不需要保护帽以防止抛光和湿蚀刻的损伤。或者，侧壁可以是磁性的，用作屏蔽的延伸部分。在任一情况下，侧壁减小了传感器的有效长度，用于线性分辨率，锐化传感器的焦点和增加线密度。传感器宽度和长度误差的公差也减少了。轨道宽度和轨道长度方向上增加的分辨率的组合提供了面积分辨率的大幅度增加，使得根据本发明的传感器可能能够以超过每平方英吋的密度来解析信号。还公开了可以与磁阻传感器结合使用的用于感应换能器的相应窄的极尖。

38. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

39. 发明授权

US08209847B2 Method of fabricating a magnetic head 失效
标题翻译：制造磁头的方法
公开(公告)号：US08209847B2
公开(公告)日：2012-07-03
申请号：US12061687
申请日：2008-04-03
申请人： Kyusik Sin
发明人： Kyusik Sin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3967 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method of fabricating a magnetic head is provided. The method of fabricating the magnetic head includes forming a writing head on a writing head area, forming an insulating layer having an inclined surface, forming a reading head on the inclined surface of the insulating layer, and forming an air bearing surface by polishing the surfaces of the writing head. Forming the reading head includes forming a first shield layer, a reading sensor, and a second shield layer.
摘要翻译：提供一种制造磁头的方法。制造磁头的方法包括在写入头区域上形成书写头，形成具有倾斜面的绝缘层，在绝缘层的倾斜表面上形成读头，并通过抛光表面形成空气轴承表面的写作头。形成读取头包括形成第一屏蔽层，读取传感器和第二屏蔽层。

40. 发明授权

US07239478B1 Write element for perpendicular recording in a data storage system 有权
标题翻译：在数据存储系统中用于垂直记录的写入元素
公开(公告)号：US07239478B1
公开(公告)日：2007-07-03
申请号：US10769409
申请日：2004-01-31
申请人： Kyusik Sin , Yinshi Liu , Benjamin Chen , Francis H. Liu
发明人： Kyusik Sin , Yinshi Liu , Benjamin Chen , Francis H. Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A write element for perpendicular recording in a data storage system is fabricated to maintain the thickness of a side shield at both edges of a pole P3, and to form the pole P3 in a trapezoidal shape. Forming a side shield around the pole P3 removes stray fields, creating a quiet, noise-free write element and preventing side erasure. The fabrication method utilizes a magnetic buffer layer to protect a shield gap during trim of the pole P3, and thus to provide the shield gap with a uniform thickness. The magnetic buffer layer also protects the shield gap and pole P3 when the top hard mask is removed. Consequently, the write field is made uniform across the track width. The fabrication method uses a metal in the shield gap to improve the pole geometry after pole trim and to provide a uniform edge to the pole P3.
摘要翻译：制造用于在数据存储系统中进行垂直记录的写入元件，以将侧屏蔽件的厚度保持在极点P 3的两个边缘处，并且形成梯形形状的极点3。在P 3周围形成一个侧面屏蔽可去除杂散场，创建一个安静，无噪音的写入元件，并防止侧面擦除。该制造方法利用磁性缓冲层来保护极P 3的修整期间的屏蔽间隙，从而提供具有均匀厚度的屏蔽间隙。当去除顶部硬掩模时，磁缓冲层还保护屏蔽间隙和极点P 3。因此，写入磁道在磁道宽度上是均匀的。制造方法使用屏蔽间隙中的金属来改善极修整之后的极几何形状，并且向极P 3提供均匀的边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式