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1. 发明授权

US06381095B1 High performance thin film magnetic write element having high Bsat poles and method for making same 失效
标题翻译：具有高Bsat极的高性能薄膜磁性写入元件及其制造方法
公开(公告)号：US06381095B1
公开(公告)日：2002-04-30
申请号：US09386889
申请日：1999-08-31
申请人： Kyusik Sin , Ronald Barr
发明人： Kyusik Sin , Ronald Barr
IPC分类号： G11B5147
CPC分类号： G11B5/313 , G11B5/3133 , G11B5/3146 , G11B5/3163
摘要： A high performance magnetic write element incorporated in a read/write head having a lower pole including high Bsat back gap and write gap pedestals. The write element further including an upper pole connected with the lower pole to form a yoke and a coil disposed within the yoke and enclosed covered with a write gap material and surrounded by insulating material. The write gap material provides separation between the first and second poles at one end of the yoke to form a write gap therebetween. A method of forming the write element of the present invention includes forming the first pole and building thereupon a back gap pedestal and a write gap pedestal at back and front ends of the first pole respectively. A dielectric layer is deposited on top of the first pole and planarized to have an upper surface coplanar with the top of the first and second pedestals. Upon the dielectric layer the coil is formed on which is deposited the write gap material. The write gap material is deposited so as to cover both the back gap and write gap pedestals. An insulation layer is deposited over the write gap material and masked to avoid covering the pedestals. After curing the insulation layer, an etching process removes at the location of the back gap material. The upper pole can then be formed onto the structure to form the yoke. Covering back gap pedestal with write gap material until the insulation has been cured effectively prevents corrosion of the back gap pedestal which would otherwise be caused by the high temperatures necessary to cure the insulation layer.
摘要翻译：一种结合在读/写头中的高性能磁写元件，其具有包括高Bsat后间隙和写间隙基座的下极。所述写入元件还包括与所述下极连接的上极，以形成轭，所述线圈设置在所述轭内，并被封闭地覆盖有写入间隙材料并被绝缘材料包围。写间隙材料提供在轭的一端处的第一和第二极之间的间隔，以在它们之间形成写入间隙。形成本发明的写入元件的方法包括分别在第一极的后端和前端形成第一极和其后面的后间隙基座和写间隙基座。电介质层沉积在第一极的顶部上并且被平坦化以具有与第一和第二基座的顶部共面的上表面。在电介质层上形成有在其上沉积写间隙材料的线圈。写入间隙材料被沉积以覆盖后部间隙和写入间隙基座。绝缘层沉积在写入间隙材料上并被掩蔽以避免覆盖基座。在固化绝缘层之后，在后隙材料的位置处去除蚀刻工艺。然后可以将上极形成在结构上以形成轭。用间隙材料覆盖背面间隙基座直到绝缘体已经被固化有效地防止背面间隙基座的腐蚀，否则这将由固化绝缘层所需的高温引起。

2. 发明授权

US06958885B1 Insulation layer structure for inductive write heads and method of fabrication 失效
标题翻译：感应写头的绝缘层结构和制造方法
公开(公告)号：US06958885B1
公开(公告)日：2005-10-25
申请号：US09745708
申请日：2000-12-21
申请人： Yingjian Chen , Kyusik Sin , Ronald Barr
发明人： Yingjian Chen , Kyusik Sin , Ronald Barr
IPC分类号： G11B5/127 , G11B5/147 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3967 , G11B5/3106 , G11B5/313 , Y10T29/49032
摘要： A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).Methods of fabrication for these embodiments are also disclosed.
摘要翻译：一种具有写入头（52）的计算机磁盘驱动器（22），包括线圈（38），形成在线圈（38）上的光致抗蚀剂绝缘层（66）和形成在线圈上的绝缘外壳层光刻胶绝缘层（66）。在第一优选实施例（100）中，写头（52）的顶极（42）形成在绝缘壳层（102）上。在第二优选实施例（200）中，磁盘驱动器写入间隙（76）形成在绝缘外壳层（102）上，写入头（52）的顶极（42）形成在写入间隙（76）上，。两个实施例中的绝缘壳层（102）优选地由电介质材料（103）制成。还公开了这些实施例的制造方法。

3. 发明授权

US07911737B1 Method and system for providing a PMR head having an antiferromagnetically coupled pole 有权
标题翻译：用于提供具有反铁磁耦合极的PMR头的方法和系统
公开(公告)号：US07911737B1
公开(公告)日：2011-03-22
申请号：US11726793
申请日：2007-03-23
申请人： Hai Jiang , Kyusik Sin
发明人： Hai Jiang , Kyusik Sin
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： The method and system for providing a perpendicular magnetic recording (PMR) head are described. The method and system include providing a metal underlayer and a PMR pole on the metal underlayer. The metal underlayer is amorphous. The PMR pole has a bottom and a top wider than the bottom. The PMR pole includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer. The first ferromagnetic layer is antiferromagnetically coupled with the second ferromagnetic layer. The second ferromagnetic layer is antiferromagnetically coupled with the third ferromagnetic layer.
摘要翻译：描述了用于提供垂直磁记录（PMR）头的方法和系统。该方法和系统包括在金属底层上提供金属底层和PMR极。金属底层是无定形的。 PMR极具有底部和顶部宽于底部。 PMR极包括至少第一铁磁层，第二铁磁层和第三铁磁层。第一铁磁层与第二铁磁层反铁磁耦合。第二铁磁层与第三铁磁层反铁磁耦合。

4. 发明授权

US07289303B1 Spin valve sensors having synthetic antiferromagnet for longitudinal bias 失效
标题翻译：旋转阀传感器具有用于纵向偏置的合成反铁磁体
公开(公告)号：US07289303B1
公开(公告)日：2007-10-30
申请号：US09828635
申请日：2001-04-05
申请人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
发明人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , H01F10/3272 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.
摘要翻译：公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。

5. 发明授权

US06713801B1 &agr;-tantalum lead for use with magnetic tunneling junctions 失效
标题翻译：用于磁性隧道结的α-钽铅
公开(公告)号：US06713801B1
公开(公告)日：2004-03-30
申请号：US10192430
申请日：2002-07-09
申请人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/302 , H01L27/222
摘要： A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.
摘要翻译：公开了一种用于提供隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁性隧道结与α-Ta引线耦合。

6. 发明授权

US08333008B1 Method for manufacturing a perpendicular magnetic recording transducer 有权
标题翻译：垂直磁记录传感器的制造方法
公开(公告)号：US08333008B1
公开(公告)日：2012-12-18
申请号：US11192591
申请日：2005-07-29
申请人： Kyusik Sin , Lei Wang , Yingjian Chen
发明人： Kyusik Sin , Lei Wang , Yingjian Chen
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/3169 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for fabricating a perpendicular magnetic recording head, and the head so formed, are described. The method includes depositing an underlayer directly on an insulating layer. The underlayer preferably includes at least one of a nonferromagnetic metal, silicon oxide, and silicon nitride. A pole layer, which has a pole removal rate, is provided on the underlayer. The method and system further include forming a perpendicular magnetic recording pole from the pole layer. The perpendicular magnetic recording pole has a top and a bottom that is narrower than the top. The process of forming the perpendicular magnetic recording pole further includes removing a portion of the pole layer such that a pole removal rate for the pole layer is less than or substantially equal to a removal rate of the underlayer during the removing step.
摘要翻译：描述了用于制造垂直磁记录头和如此形成的头的方法和系统。该方法包括直接在绝缘层上沉积底层。底层优选包括非铁磁金属，氧化硅和氮化硅中的至少一种。在底层上提供具有极去除率的极层。该方法和系统还包括从极层形成垂直磁记录极。垂直磁记录极具有比顶部窄的顶部和底部。形成垂直磁记录极的过程还包括去除极层的一部分，使得极层的极去除率小于或基本上等于在去除步骤期间底层的去除速率。

7. 发明授权

US07248431B1 Method of fabricating a perpendicular recording write head having a gap with two portions 有权
标题翻译：制造具有两部分间隙的垂直记录写头的方法
公开(公告)号：US07248431B1
公开(公告)日：2007-07-24
申请号：US10837350
申请日：2004-04-30
申请人： Yinshi Liu , Benjamin Chen , Kyusik Sin , Hongping Yuan
发明人： Yinshi Liu , Benjamin Chen , Kyusik Sin , Hongping Yuan
IPC分类号： G11B5/127 , G11B5/187 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/235 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49052
摘要： A method of fabricating a write head for perpendicular recording is provided. The write head has a pole, a shield in proximity to the pole, and a gap between the pole and the shield. The method includes forming a pole layer on an undercoat layer, forming a mask over at least a portion of the pole layer, and forming the pole by removing material from the pole layer. The pole has a top surface, a first side, and a second side. The method further includes forming a first gap portion of the gap along the first side and along the second side of the pole, forming a protective layer over at least a portion of the first gap portion, removing the mask, and removing the protective layer. The method further includes forming a second gap portion of the gap over at least the top surface of the pole and forming the shield over at least the second gap portion.
摘要翻译：提供一种制造用于垂直记录的写入头的方法。写头具有极，靠近极的屏蔽，以及极与屏蔽之间的间隙。该方法包括在底涂层上形成极层，在极层的至少一部分上形成掩模，并通过从极层去除材料形成极。极具有顶表面，第一侧和第二侧。该方法还包括沿着第一侧沿着极的第二侧形成间隙的第一间隙部分，在第一间隙部分的至少一部分上形成保护层，去除掩模，以及去除保护层。所述方法还包括在至少所述极的顶表面上形成所述间隙的第二间隙部分，并在至少所述第二间隙部分上形成所述屏蔽。

8. 发明授权

US07177117B1 Magnetically soft, high saturation magnetization laminates of iron-cobalt-nitrogen and iron-nickel for magnetic head pole layers 有权
标题翻译：用于磁头极层的铁 - 钴 - 氮和铁 - 镍的磁软，高饱和磁化层压板
公开(公告)号：US07177117B1
公开(公告)日：2007-02-13
申请号：US10853416
申请日：2004-05-24
申请人： Hai Jiang , Kyusik Sin , Yingjian Chen
发明人： Hai Jiang , Kyusik Sin , Yingjian Chen
IPC分类号： G11B5/147
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/313 , G11B5/3967 , G11B2005/3996 , Y10T428/12465
摘要： A magnetic head comprising a first layer containing NiFe having a concentration of iron that is at least thirty percent and not more than seventy percent; a second layer that adjoins the first layer and contains FeCoN having a concentration of iron that is greater than the second layer's concentration of cobalt, having a concentration of nitrogen that is less than the second layer's concentration of cobalt and less than three percent; and a third layer containing FeCoNi having a concentration of nickel that is less than eight percent, having a concentration of cobalt that is less than the third layer's concentration of iron and greater than the third layer's concentration of nickel, the third layer adjoining only one of the first and second layers. The first and second layers may be repeated to form a magnetically soft high BS laminate for a pole layer.
摘要翻译：磁头，其包含含有铁浓度为至少百分之三十且不超过百分之七十的NiFe的第一层; 邻接第一层并且含有铁浓度大于第二层钴浓度的FeCoN的第二层，其具有小于第二层的钴浓度的氮浓度小于3％; 以及第三层，其含有镍浓度小于8％的FeCoNi，其钴浓度小于第三层铁的浓度，大于第三层的镍浓度，第三层仅与第一层和第二层。可以重复第一层和第二层以形成用于极层的磁性柔软的高B层压板。

9. 发明授权

US07012832B1 Magnetic memory cell with plural read transistors 有权
标题翻译：具有多个读取晶体管的磁存储单元
公开(公告)号：US07012832B1
公开(公告)日：2006-03-14
申请号：US10698747
申请日：2003-10-31
申请人： Kyusik Sin , Matthew R. Gibbons , William D. Jensen , Hugh Craig Hiner , Xizeng Stone Shi , Roberto Bez , Giulio Casagrande , Paolo Cappelletti
发明人： Kyusik Sin , Matthew R. Gibbons , William D. Jensen , Hugh Craig Hiner , Xizeng Stone Shi , Roberto Bez , Giulio Casagrande , Paolo Cappelletti
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) device has increased ΔR/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ΔR/R. The plural transistors can share a source region.
摘要翻译：磁性随机存取存储器（MRAM）器件增加了用于感测引脚依赖隧道（SDT）器件的状态的DeltaR / R。 MRAM器件包括连接到读取线的多个晶体管，用于感测SDT器件的状态。多个晶体管在读取期间降低潜在电阻，增加DeltaR / R。多个晶体管可以共享源极区域。

10. 发明授权

US06744608B1 Method and system for making TMR junctions 有权
标题翻译：制造TMR结的方法和系统
公开(公告)号：US06744608B1
公开(公告)日：2004-06-01
申请号：US10146517
申请日：2002-05-14
申请人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.
摘要翻译：公开了一种用于提供隧道磁阻传感器的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和绝缘层。固定和自由层是铁磁性的。该方法和系统还包括提供用于在隧道磁阻传感器的顶部限定传感器的硬掩模层。该方法和系统还包括使用硬掩模层来定义隧道磁阻传感器。因此，被钉扎层，自由层和绝缘层能够具有小于0.2μm的最小尺寸。

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