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31. 发明授权

US5757409A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

32. 发明授权

US5621497A Pattern forming method and projection exposure tool therefor 失效
标题翻译：图案形成方法和投影曝光工具
公开(公告)号：US5621497A
公开(公告)日：1997-04-15
申请号：US415937
申请日：1995-04-03
申请人： Tsuneo Terasawa , Shinji Okazaki , Minoru Toriumi
发明人： Tsuneo Terasawa , Shinji Okazaki , Minoru Toriumi
IPC分类号： G03F7/20 , H01L21/30
CPC分类号： G03F7/70091 , G03F7/2002 , G03F7/2022 , G03F7/701 , G03F7/70216 , G03F7/70233 , G03F7/70408 , G03F7/70458
摘要： Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.
摘要翻译：公开了一种图案形成方法，包括以下步骤：制备设置在具有要投射的掩模图案的掩模版附近的第二光栅条，通过发射光来调制掩模图案，以及通过在感光体内形成的第一格栅条来解调调制掩模图案由能够可逆地诱导光化学反应的材料制成的膜，从而在设置在感光膜下方的抗蚀剂膜内形成掩模图案的调制图像。利用这种方法，形成各种精细图案，每种精细图案都小于使用的投影曝光工具的分辨率极限。

33. 发明授权

US5334282A Electron beam lithography system and method 失效
标题翻译：电子束光刻系统及方法
公开(公告)号：US5334282A
公开(公告)日：1994-08-02
申请号：US765252
申请日：1991-09-25
申请人： Yoshinori Nakayama , Shinji Okazaki
发明人： Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01L21/027 , B23K15/00 , G03F7/20 , H01J37/317 , A61K27/02
CPC分类号： B82Y10/00 , B23K15/0013 , B82Y40/00 , G03F7/2061 , H01J37/3174 , H01J2237/30472 , H01J2237/31767 , H01J2237/31769 , H01J2237/31776 , Y10S438/946 , Y10S438/949
摘要： An electron beam lithography system and method which provide an in-plane current density distribution of an electron beam focussed onto a specimen so as to prevent a proximity effect and space charge effect.
摘要翻译：提供电子束光刻系统和方法，其提供聚焦在样本上的电子束的面内电流密度分布，以防止接近效应和空间电荷效应。

34. 发明授权

US4798470A Pattern printing method and apparatus 失效
标题翻译：图案印刷方法和装置
公开(公告)号：US4798470A
公开(公告)日：1989-01-17
申请号：US927939
申请日：1986-11-07
申请人： Shigeo Moriyama , Toshiei Kurosaki , Tsuneo Terasawa , Shinji Okazaki , Yoshio Kawamura
发明人： Shigeo Moriyama , Toshiei Kurosaki , Tsuneo Terasawa , Shinji Okazaki , Yoshio Kawamura
IPC分类号： G03F9/00 , G01B11/00
CPC分类号： G03F9/7026 , G03F9/7076 , G03F9/7084
摘要： A pattern printing method includes a step of printing a pattern on a wafer on the basis of a target mark provided on the surface of the wafer which is opposite to the surface thereof on which the pattern is to be printed. Also disclosed is a pattern printing apparatus which comprises detecting means for detecting a target mark provided on the surface of a wafer which is opposite to the surface thereof on which a pattern is to be printed, and pattern printing means for printing the pattern on the pattern printing surface of the wafer on the basis of mark position data obtained by the detecting means.
摘要翻译：图案印刷方法包括基于设置在与要印刷图案的表面相对的晶片表面上的目标标记在晶片上印刷图案的步骤。还公开了一种图案打印装置，其包括检测装置，用于检测设置在与其上要印刷图案的表面相对的晶片表面上的目标标记，以及用于在图案上印刷图案的图案印刷装置基于由检测装置获得的标记位置数据，晶片的印刷表面。

35. 发明授权

US4740693A Electron beam pattern line width measurement system 失效
标题翻译：电子束图案线宽测量系统
公开(公告)号：US4740693A
公开(公告)日：1988-04-26
申请号：US807681
申请日：1985-12-11
申请人： Yoshinori Nakayama , Shinji Okazaki , Hidehito Obayashi , Mikio Ichihashi
发明人： Yoshinori Nakayama , Shinji Okazaki , Hidehito Obayashi , Mikio Ichihashi
IPC分类号： G01S13/74 , G01B7/02 , G01B15/00 , H01J37/28 , G01B7/14
CPC分类号： H01J37/28 , G01B15/00 , G01B7/02
摘要： Disclosed is an electron beam pattern line width measurement system wherein an electron beam is converged to a fine spot, the electron beam is scanned on a sample formed with a pattern to-be-measured, secondary electrons generated from a surface of the sample by the projection of the electron beam are detected, and the detected signal is processed to determine a line width of the pattern to-be-measured, comprising a secondary electron detector which detects a signal corresponding to an amount of all secondary electrons generated by the scanning, and a secondary electron energy analyzer which selectively detects a signal corresponding to an amount of secondary electrons of specified energy. With the electron beam pattern line width measurement system, it becomes possible to precisely detect a pattern boundary region defined by different sorts of materials in a stepped structure of a small level difference not having been measurable with a prior-art electron beam pattern line width measurement system.
摘要翻译：公开了一种电子束图案线宽度测量系统，其中电子束会聚到细微点，电子束在形成有要测量图案的样品上扫描，从样品表面产生的二次电子被检测电子束的投影，并且处理检测信号以确定要测量的图案的线宽，包括二次电子检测器，其检测对应于由扫描产生的所有二次电子的量的信号，以及二次电子能量分析器，其选择性地检测与特定能量的二次电子量对应的信号。利用电子束图案线宽度测量系统，可以精确地检测由现有技术的电子束图案线宽度测量不能测量的小电平差的阶梯式结构中由不同种类的材料限定的图案边界区域系统。

36. 发明授权

US4315984A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4315984A
公开(公告)日：1982-02-16
申请号：US176799
申请日：1980-08-11
申请人： Shinji Okazaki , Kozo Mochiji , Susumu Takahashi , Fumio Murai
发明人： Shinji Okazaki , Kozo Mochiji , Susumu Takahashi , Fumio Murai
IPC分类号： H01L21/3213 , G03F7/26 , H01L21/027 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3205 , H01L21/768 , B05D3/06
CPC分类号： H01L21/7688 , H01L21/0272 , Y10S438/95 , Y10S438/951
摘要： That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed.By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed.After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.
摘要翻译：要形成接触的抗蚀剂膜的区域和要形成互连的区域分别以基本上等于抗蚀剂膜的最佳剂量的剂量的电子束和剂量小于最佳剂量。之后，形成抗蚀膜。通过进行干蚀刻，在要形成接触的区域中设置延伸到基板的开口，并且覆盖基板的绝缘膜的表面在要形成互连的区域中露出。在整个表面上沉积导电金属膜之后，剩余的抗蚀剂膜与沉积在其上的金属膜一起被去除，从而形成接触和互连。

37. 发明申请

US20050170822A1 Method of controlling a communication terminal having a plurality of functions, communication terminal apparatus, communication control system 有权
标题翻译：控制具有多种功能的通信终端的方法，通信终端装置，通信控制系统
公开(公告)号：US20050170822A1
公开(公告)日：2005-08-04
申请号：US11093784
申请日：2005-03-29
申请人： Shinji Okazaki , Hirokazu Takagaki , Katsumi Hirota , Koichi Matsuno , Ichiro Hino
发明人： Shinji Okazaki , Hirokazu Takagaki , Katsumi Hirota , Koichi Matsuno , Ichiro Hino
IPC分类号： H04M1/00 , G10K15/02 , H04B1/40 , H04M1/60 , H04M1/67 , H04M1/725 , H04M1/73 , H04M11/08 , H04W52/02 , H04W60/00 , H04W64/00 , H04W88/02 , H04M3/00
CPC分类号： H04M15/47 , H04M1/6041 , H04M1/67 , H04M1/72519 , H04M1/72522 , H04M1/72558 , H04M2215/0148 , H04W52/0264
摘要： When a radio communication is made between a predetermined base station and a communication terminal, the communication terminal is allowed to make a communication if a predetermined registration processing is made. If the above registration processing is not executed, then predetermined functions other than a communication function of the communication terminal are limited. Moreover, when a predetermined operation mode is set by an operation means, at least a transmission processing at a radio communication means is stopped and an execution of predetermined functions other than the radio communication processing is not restricted. Thus, when a communication terminal apparatus incorporates therein other functions than an audio reproducing function, operation of such function can be limited properly. Moreover, when other functions such as an audio reproducing function are incorporated into a communication terminal apparatus, operations of the functions thus incorporated can be limited properly and the communication functions can be stopped properly.
摘要翻译：当在预定基站和通信终端之间进行无线电通信时，如果进行了预定的登记处理，则通信终端被允许进行通信。如果不执行上述注册处理，则限制通信终端的通信功能以外的预定功能。此外，当通过操作装置设定预定操作模式时，至少停止在无线电通信装置处的发送处理，并且不限制除了无线电通信处理之外的预定功能的执行。因此，当通信终端装置在其中并入具有比音频再现功能的其它功能时，可以适当地限制这种功能的操作。此外，当诸如音频再现功能的其它功能被并入到通信终端设备中时，可以适当地限制所包含的功能的操作，并且可以适当地停止通信功能。

38. 发明授权

US5733918A Condensed-Indan derivatives and pharmaceutically acceptable salts thereof 失效
标题翻译：缩合 - 茚满衍生物及其药学上可接受的盐
公开(公告)号：US5733918A
公开(公告)日：1998-03-31
申请号：US578542
申请日：1996-01-19
申请人： Shinji Okazaki , Tetsuji Asao , Motoji Wakida , Keisuke Ishida , Masato Washinosu , Teruhiro Utsugi , Yuji Yamada
发明人： Shinji Okazaki , Tetsuji Asao , Motoji Wakida , Keisuke Ishida , Masato Washinosu , Teruhiro Utsugi , Yuji Yamada
IPC分类号： A61K31/44 , A61K31/473 , A61P35/00 , C07D221/18 , C07D401/12 , C07D491/04 , C07D491/056 , C07D521/00 , A61K31/47 , C07D491/56
CPC分类号： C07D231/12 , C07D221/18 , C07D233/56 , C07D249/08 , C07D401/12 , C07D491/04
摘要： A condensed-indan derivative represented by formula (1) and a pharmaceutically acceptable salt thereof: ##STR1## wherein ring A represents an optionally substituted benzene ring or naphthalene ring, or a benzene ring having a lower alkylenedioxy group, ring B represents an optionally substituted benzene ring or a benzene ring having a lower alkylenedioxy group. Y represents --N.dbd.CR-- or --CR=N--, R represents a --NR.sub.1 R.sub.2 group, an optionally substituted nitrogen-containing heterocyclic group or a --OR.sub.3 group, wherein R.sub.1 and R.sub.2 are the same or different and each is a hydrogen atom; a phenyl group; an optionally substituted nitrogen-containing heterocyclic group; or a lower alkyl group which may be substituted by at least one selected from the group consisting of an optionally substituted amino group, a lower alkoxy group, a phenyl group, a nitrogen-containing heterocyclic group, an amine oxide group substituted by a lower alkyl group or a hydroxyl group(s); R.sub.3 represents a lower alkyl group optionally substituted by a substituted amino group, except when R represents an optionally substituted nitrogen-containing heterocyclic group; ring A and ring B are a benzene ring having no substituent group.
摘要翻译： PCT No.PCT / JP95 / 00944 Sec。 371日期1996年1月19日 102（e）日期1996年1月19日PCT提交1995年5月18日PCT公布。出版物WO95 / 32187 日期：1995年11月30日由式（1）表示的缩合 - 缩水甘油衍生物及其药学上可接受的盐：其中环A表示任选取代的苯环或萘环，或具有低级亚烷基二氧基基团，环B表示任选取代的苯环或具有较低亚烷基二氧基的苯环。 Y表示-N = CR-或-CR = N-，R表示-NR1R2基，任选取代的含氮杂环基或-OR 3基，其中R1和R2相同或不同，各自为氢原子 ; 苯基; 任选取代的含氮杂环基; 或可以被选自任选取代的氨基，低级烷氧基，苯基，含氮杂环基，被低级烷基取代的氧化胺基中的至少一种取代的低级烷基基团或羟基; R3表示任选被取代的氨基取代的低级烷基，除了当R表示任意取代的含氮杂环基时; 环A和环B是没有取代基的苯环。

39. 发明授权

US5691115A Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices 失效
标题翻译：半导体集成电路器件的曝光方法，对准器及其制造方法
公开(公告)号：US5691115A
公开(公告)日：1997-11-25
申请号：US546313
申请日：1995-10-20
申请人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
发明人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
IPC分类号： G03F1/00 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/20 , G03F9/00 , G03C5/00
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译：为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动，在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生透射光的相移。

40. 发明授权

US5402410A High density storage of information on a substrate with multiple depth and height 失效
标题翻译：在具有多个深度和高度的基板上高密度地存储信息
公开(公告)号：US5402410A
公开(公告)日：1995-03-28
申请号：US810328
申请日：1991-12-19
申请人： Toshiyuki Yoshimura , Shigeru Kakumoto , Shinji Okazaki , Yuji Toda
发明人： Toshiyuki Yoshimura , Shigeru Kakumoto , Shinji Okazaki , Yuji Toda
IPC分类号： G01Q60/10 , G01Q60/24 , G01Q80/00 , G01Q90/00 , G11B9/00 , G11B9/10 , G11B9/14 , G11C13/00 , H01L27/10 , G11B7/26
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1463 , Y10S977/861 , Y10S977/881 , Y10S977/887 , Y10S977/947
摘要： A high density storage medium which stores predetermined information by matching it on one-to-one basis with multiple levels of depth or height formed in predetermined plural areas of substrate surface, a storing method, a reading method and various systems using them have been disclosed.
摘要翻译：已经公开了一种高密度存储介质，其通过在预定的多个基板表面的多个区域中形成的多个深度或高度的水平一一对应地存储预定信息，存储方法，读取方法和使用它们的各种系统。

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