专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US5324920A Heat treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5324920A
公开(公告)日：1994-06-28
申请号：US779254
申请日：1991-10-18
申请人： Ken Nakao
发明人： Ken Nakao
IPC分类号： C30B25/10 , C30B31/12 , F27B5/14 , H01L21/00 , H05B3/64 , F27B5/16
CPC分类号： H01L21/67115 , C30B25/10 , C30B31/12 , F27B5/14 , H05B3/64 , H01J2237/2001 , H05B2203/018
摘要： The heat treatment apparatus according to the invention comprising a process tube for holding a plurality of semiconductor wafers, a heating resistive element made mainly of molybdenum silicide and surrounding the process tube, a heat insulating member surrounding the heating resistive element and having a layer which made of material inert to silicon dioxide and faces the surface of the heating resistive element, and a securing member securing the heating resistive element to the heat insulating member, and made of material inert to silicon dioxide.
摘要翻译：根据本发明的热处理设备包括用于保持多个半导体晶片的处理管，主要由硅化钼制成并围绕处理管的加热电阻元件，围绕加热电阻元件的绝热元件，并且具有制成的层二氧化硅惰性且面向加热电阻元件表面的材料，以及将加热电阻元件固定到绝热构件上并由二氧化硅惰性的材料制成的固定构件。

22. 发明授权

US08387559B2 Semiconductor manufacturing plant 失效
标题翻译：半导体制造厂
公开(公告)号：US08387559B2
公开(公告)日：2013-03-05
申请号：US12278407
申请日：2007-02-07
申请人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
发明人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： F17D1/04 , C01B7/19 , F17C2250/032 , F17C2270/0518 , H01L21/67017 , H01L21/67276
摘要： Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
摘要翻译：氟气发生器通过包括存储在现场氟气发生器中产生的预定量的氟气的储罐的气体供给系统与半导体制造装置连接。当一个或多个现场氟气发生器停止时，从储存预定量的氟气的储罐向半导体制造装置供应氟气，以保持半导体制造装置的操作。由此，能够将在氟气发生器中产生的氟气安全稳定地供给到半导体制造装置，并具有优异的成本性能的半导体制造工厂。

23. 发明授权

US07862638B2 Gas supply system for semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置用气体供给系统
公开(公告)号：US07862638B2
公开(公告)日：2011-01-04
申请号：US12061982
申请日：2008-04-03
申请人： Shuji Moriya , Ken Nakao
发明人： Shuji Moriya , Ken Nakao
IPC分类号： B01D46/00 , H01L21/205
CPC分类号： C23C16/4402 , C23C14/564 , Y10S55/15
摘要： A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
摘要翻译：根据本发明的气体供给系统包括：气体过滤器，设置在气体供给流路中，通过该气体供给流路将气体供给到半导体制造装置，并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游，其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。

24. 发明授权

US07807587B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07807587B2
公开(公告)日：2010-10-05
申请号：US12083342
申请日：2006-10-06
申请人： Hiroyuki Matsuura , Ken Nakao
发明人： Hiroyuki Matsuura , Ken Nakao
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/45591 , C23C16/4584 , F27B17/0025 , H01L21/67109
摘要： The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
摘要翻译：本发明是一种基板处理装置，其特征在于，包括：以层状保持基板的保持架; 处理容器，其包含所述保持器，并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部，其将处理气体引入到处理容器中; 气体排出部，其从所述处理容器排出气体，以在其中产生预定的真空压力; 以及加热部，其对加工容器进行加热; 其中，所述保持器设置有挡板，当所述保持器容纳在所述处理容器中时，所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。

25. 发明申请

US20090305512A1 Substrate Processing Apparatus and Substrate Processing Method 有权
标题翻译：基板加工装置及基板加工方法
公开(公告)号：US20090305512A1
公开(公告)日：2009-12-10
申请号：US12083342
申请日：2006-10-06
申请人： Hiroyuki Matsuura , Ken Nakao
发明人： Hiroyuki Matsuura , Ken Nakao
IPC分类号： H01L21/465 , C23C16/44
CPC分类号： H01L21/67303 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/45591 , C23C16/4584 , F27B17/0025 , H01L21/67109
摘要： The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
摘要翻译：本发明是一种基板处理装置，其特征在于，包括：以层状保持基板的保持架; 处理容器，其包含所述保持器，并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部，其将处理气体引入到处理容器中; 气体排出部，其从所述处理容器排出气体，以在其中产生预定的真空压力; 以及加热部，其对加工容器进行加热; 其中，所述保持器设置有挡板，当所述保持器容纳在所述处理容器中时，所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。

26. 发明申请

US20090246542A1 PLASMA PROCESS APPARATUS, PLASMA PROCESS METHOD, AND OBJECT PROCESSED BY THE PLASMA PROCESS METHOD 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法和等离子体处理方法的对象
公开(公告)号：US20090246542A1
公开(公告)日：2009-10-01
申请号：US12410492
申请日：2009-03-25
申请人： Ken Nakao , Shuji Moriya , Hiroyuki Kousaka
发明人： Ken Nakao , Shuji Moriya , Hiroyuki Kousaka
IPC分类号： B32B15/04 , C23C16/513
CPC分类号： H05H1/46 , H05H2001/4622 , H05H2240/10 , H05H2245/123 , Y10T428/31678
摘要： A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed.
摘要翻译：所公开的等离子体处理装置包括产生电磁波的电磁波发生器; 真空容器，其构造成与待处理物体气密连接，并与被加工物体一起被抽空到与真空容器密封连接的被处理物体上; 电磁波引导部，被配置为引导由电磁波发生器产生的电磁波，使得等离子体在真空容器中点燃; 气体供给部构造成将处理气体供给到与真空容器密封连接的待加工对象物; 排气部，其构造成对与所述真空容器密封连接的待加工物体进行抽真空; 以及电压源，其构造成对与所述真空容器进行气密连接的待加工对象施加预定电压，使得在所述真空容器中点燃的等离子体被引导到被处理物体。

27. 发明申请

US20090136888A1 Heat processing apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20090136888A1
公开(公告)日：2009-05-28
申请号：US11922010
申请日：2006-06-12
申请人： Ken Nakao , Kazuhiko Kato
发明人： Ken Nakao , Kazuhiko Kato
IPC分类号： F27B9/04 , B21D53/02 , F27B14/14
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/54 , H01L21/324 , H01L21/67098 , H01L21/67103 , H01L21/67109 , Y10T29/4935
摘要： The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows-out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other.
摘要翻译：本发明是一种热处理装置，包括：处理容器，其以层状方式接收待处理的多个物体，以对被处理物进行预定的加热处理; 管状加热器，其设置成围绕处理容器，所述管状加热器能够加热被处理物体; 用于排出加热器和处理容器之间的空间中的气氛的排气系统; 以及将冷却流体吹入空间以冷却处理容器的冷却单元。加热器具有管状绝热构件和布置在绝热构件的内周上的加热电阻器。冷却单元具有嵌入绝热构件中的多个吹出喷嘴。每个喷吹嘴都以这样的方式形成，使得喷嘴的入口孔和出口孔彼此不直线对准。

28. 发明申请

US20050121142A1 Thermal processing apparatus and a thermal processing method 审中-公开
标题翻译：热处理装置和热处理方法
公开(公告)号：US20050121142A1
公开(公告)日：2005-06-09
申请号：US10960762
申请日：2004-10-08
申请人： Ken Nakao , Takanobu Asano , Hiroki Fukushima , Katsuya Okumura
发明人： Ken Nakao , Takanobu Asano , Hiroki Fukushima , Katsuya Okumura
IPC分类号： H01L21/31 , C23C16/02 , H01L21/00 , H01L21/205 , H01L21/304 , H01L21/324 , C23F1/00
CPC分类号： H01L21/67109 , C23C16/0227 , H01L21/67057
摘要： Substrates having surfaces in a highly clean condition are subjected to a thermal process in a heating furnace. In a thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, the substrates are held in a vertical position at horizontal intervals in a reaction vessel. Cleaning liquids are supplied into the reaction vessel to clean the substrates, and then the cleaning liquids are drained away through a drain port, and then a process gas is supplied into the reaction vessel to process the substrates by a thermal process. The substrates having the cleaned clean surfaces are subjected to the thermal process without being exposed to the ambient atmosphere and can be satisfactorily processed by the thermal process.
摘要翻译：具有高度干燥状态的表面的基板在加热炉中进行热处理。在用于通过加热装置加热基板的预定热处理来处理基板的热处理装置中，基板在反应容器中以水平间隔保持在垂直位置。向反应容器内供给清洗液以清洗基板，然后将清洗液通过排水口排出，然后通过热处理将工艺气体供给到反应容器中以处理基板。具有清洁的清洁表面的基板经受热处理而不暴露于环境大气中，并且可以通过热处理令人满意地加工。

29. 发明授权

US6043468A Carbon heater 失效
标题翻译：碳加热器
公开(公告)号：US6043468A
公开(公告)日：2000-03-28
申请号：US126847
申请日：1998-07-31
申请人： Eiichi Toya , Masahiko Ichishima , Tomio Konn , Tomohiro Nagata , Shigeru Yamamura , Norihiko Saito , Kouji Teraoka , Takeshi Inaba , Hiroyuki Honma , Ken Nakao , Takanori Saito , Hisaei Osanai , Toshiyuki Makiya
发明人： Eiichi Toya , Masahiko Ichishima , Tomio Konn , Tomohiro Nagata , Shigeru Yamamura , Norihiko Saito , Kouji Teraoka , Takeshi Inaba , Hiroyuki Honma , Ken Nakao , Takanori Saito , Hisaei Osanai , Toshiyuki Makiya
IPC分类号： C30B15/14 , C30B35/00 , H05B3/44
CPC分类号： C30B35/00 , C30B15/14 , H05B2203/003
摘要： A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.
摘要翻译：一种碳加热器，包括加热器构件（11,111,121,161,212,222,315,325,354,411,515,612），其中多个碳纤维束具有多个碳纤维，捆扎的直径为5〜15μm被编织成纵向细长形状，例如线状或带状，杂质含量在灰分中小于10ppm。

30. 发明授权

US5297956A Method and apparatus for heat treating 失效
标题翻译：热处理方法和装置
公开(公告)号：US5297956A
公开(公告)日：1994-03-29
申请号：US799931
申请日：1991-11-29
申请人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
发明人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
IPC分类号： H01L21/324 , C30B31/12 , C30B31/14 , H01L21/22 , H01L21/31 , H01L21/673 , H01L21/683 , F23D5/00
CPC分类号： C30B31/12 , C30B31/14
摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.
摘要翻译：一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于其外周侧比其内周侧厚。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式