专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08387559B2 Semiconductor manufacturing plant 失效
标题翻译：半导体制造厂
公开(公告)号：US08387559B2
公开(公告)日：2013-03-05
申请号：US12278407
申请日：2007-02-07
申请人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
发明人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： F17D1/04 , C01B7/19 , F17C2250/032 , F17C2270/0518 , H01L21/67017 , H01L21/67276
摘要： Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
摘要翻译：氟气发生器通过包括存储在现场氟气发生器中产生的预定量的氟气的储罐的气体供给系统与半导体制造装置连接。当一个或多个现场氟气发生器停止时，从储存预定量的氟气的储罐向半导体制造装置供应氟气，以保持半导体制造装置的操作。由此，能够将在氟气发生器中产生的氟气安全稳定地供给到半导体制造装置，并具有优异的成本性能的半导体制造工厂。

2. 发明申请

US20100064969A1 SEMICONDUCTOR MANUFACTURING PLANT 失效
标题翻译：半导体制造厂
公开(公告)号：US20100064969A1
公开(公告)日：2010-03-18
申请号：US12278407
申请日：2007-02-07
申请人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
发明人： Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
IPC分类号： H01L21/46
CPC分类号： F17D1/04 , C01B7/19 , F17C2250/032 , F17C2270/0518 , H01L21/67017 , H01L21/67276
摘要： Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
摘要翻译：氟气发生器通过包括存储在现场氟气发生器中产生的预定量的氟气的储罐的气体供给系统与半导体制造装置连接。当一个或多个现场氟气发生器停止时，从储存预定量的氟气的储罐向半导体制造装置供应氟气，以保持半导体制造装置的操作。由此，能够将在氟气发生器中产生的氟气安全稳定地供给到半导体制造装置，并具有优异的成本性能的半导体制造工厂。

3. 发明申请

US20080105194A1 Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus 审中-公开
标题翻译：气体供给系统，气体供给方法，清洗薄膜形成装置的方法，薄膜形成方法和薄膜形成装置
公开(公告)号：US20080105194A1
公开(公告)日：2008-05-08
申请号：US11907409
申请日：2007-10-11
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Mitsuhiro Okada , Manabu Honma , Tomoki Haneishi
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Mitsuhiro Okada , Manabu Honma , Tomoki Haneishi
IPC分类号： C23C22/00 , C23C16/455 , B08B9/027
CPC分类号： C23C16/4405 , B08B7/00 , B08B9/00 , B08B9/027 , C23C16/455
摘要： A thin film forming apparatus 1 comprises a reaction chamber 2, and an exhaust pipe 5 connected with the reaction chamber 2. A fluorine introducing pipe 17c and a hydrogen introducing pipe 17d are connected with the reaction chamber 2, in order to supply a cleaning gas containing fluorine gas and hydrogen gas into the reaction chamber 2 or into the exhaust pipe 5. The hydrogen introducing pipe 17d includes an inner fluid passage 174 and an outer fluid passage 175 formed to cover around the inner fluid passage 174. The hydrogen gas is supplied through the inner fluid passage 174, while nitrogen gas is supplied through the outer fluid passage 175. Thus, the hydrogen gas to be fed through the inner fluid passage can be supplied from the hydrogen introducing pipe 17d, while being covered with the nitrogen gas.
摘要翻译：薄膜形成装置1包括反应室2和与反应室2连接的排气管5。将氟导入管17c和氢引入管17d与反应室2连接，以将含有氟气和氢气的清洁气体供应到反应室2或排气管5中。氢引入管17d包括形成为覆盖内部流体通道174周围的内部流体通道174和外部流体通道175。通过内部流体通道174供应氢气，同时通过外部流体通道175供应氮气。因此，能够从氢气导入管17d供给通过内部流路的氢气被氮气覆盖。

4. 发明申请

US20080245306A1 Vaporizer and semiconductor processing system 有权
标题翻译：汽化器和半导体加工系统
公开(公告)号：US20080245306A1
公开(公告)日：2008-10-09
申请号：US12076765
申请日：2008-03-21
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
IPC分类号： C23C16/00
CPC分类号： C23C16/4486
摘要： A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.
摘要翻译：用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间块。内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

5. 发明授权

US08197600B2 Vaporizer and semiconductor processing system 有权
标题翻译：汽化器和半导体加工系统
公开(公告)号：US08197600B2
公开(公告)日：2012-06-12
申请号：US12076765
申请日：2008-03-21
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
IPC分类号： C23C16/00 , C23C16/448
CPC分类号： C23C16/4486
摘要： A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.
摘要翻译：用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间块。内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

6. 发明授权

US07954452B2 Film formation apparatus for semiconductor process and method for using the same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US07954452B2
公开(公告)日：2011-06-07
申请号：US11878274
申请日：2007-07-23
申请人： Tsuneyuki Okabe , Hitoshi Kato
发明人： Tsuneyuki Okabe , Hitoshi Kato
IPC分类号： C23C16/00 , C23C16/52 , C23C16/455 , H01L21/306
CPC分类号： C23C16/4405 , H01L21/3185
摘要： A method for using a film formation apparatus for a semiconductor process forms a first atmosphere inside an upstream gas passage between a gas supply source of a halogen acidic gas and a flow rate controller. The first atmosphere is set for the halogen acidic gas to have an average molecular weight of 20 or more and 23 or less. Further, the using method supplies the halogen acidic gas from the gas supply source through the upstream gas passage having the first atmosphere thus formed and the flow rate controller, thereby supplying a cleaning gas containing the halogen acidic gas into a reaction chamber of the film formation apparatus. A by-product film deposited on an inner surface of the reaction chamber is etched and removed by use of the cleaning gas thus supplied.
摘要翻译：使用半导体工艺的成膜装置的方法在卤素酸性气体的气体供给源和流量控制器之间的上游气体通道内部形成第一气氛。卤素酸性气体的第一个气氛是平均分子量为20以上且23以下。此外，使用方法通过具有如此形成的第一气氛的上游气体通道和流量控制器从气体供给源供给卤素酸性气体，从而将含有卤素酸性气体的清洗气体供给到膜形成反应室仪器。沉积在反应室的内表面上的副产物膜通过使用如此提供的清洁气体被蚀刻除去。

7. 发明申请

US20080076264A1 Film formation apparatus for semiconductor process and method for using the same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US20080076264A1
公开(公告)日：2008-03-27
申请号：US11878274
申请日：2007-07-23
申请人： Tsuneyuki Okabe , Hitoshi Kato
发明人： Tsuneyuki Okabe , Hitoshi Kato
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , H01L21/3185
摘要： A method for using a film formation apparatus for a semiconductor process forms a first atmosphere inside an upstream gas passage between a gas supply source of a halogen acidic gas and a flow rate controller. The first atmosphere is set for the halogen acidic gas to have an average molecular weight of 20 or more and 23 or less. Further, the using method supplies the halogen acidic gas from the gas supply source through the upstream gas passage having the first atmosphere thus formed and the flow rate controller, thereby supplying a cleaning gas containing the halogen acidic gas into a reaction chamber of the film formation apparatus. A by-product film deposited on an inner surface of the reaction chamber is etched and removed by use of the cleaning gas thus supplied.
摘要翻译：使用半导体工艺的成膜装置的方法在卤素酸性气体的气体供给源和流量控制器之间的上游气体通道内部形成第一气氛。卤素酸性气体的第一个气氛是平均分子量为20以上且23以下。此外，使用方法通过具有如此形成的第一气氛的上游气体通道和流量控制器从气体供给源供给卤素酸性气体，从而将含有卤素酸性气体的清洗气体供给到膜形成反应室仪器。沉积在反应室的内表面上的副产物膜通过使用如此提供的清洁气体被蚀刻除去。

8. 发明申请

US20090175705A1 SUBSTRATE TRANSFER APPARATUS AND VERTICAL HEAT PROCESSING APPARATUS 有权
标题翻译：基板传送装置和垂直加热装置
公开(公告)号：US20090175705A1
公开(公告)日：2009-07-09
申请号：US12225920
申请日：2007-04-23
申请人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
发明人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
IPC分类号： H01L21/677 , B25B11/00 , H01L21/673 , H01L21/68
CPC分类号： H01L21/67098 , H01L21/6838 , H01L21/68707
摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.
摘要翻译：本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。

9. 发明授权

US08167521B2 Substrate transfer apparatus and vertical heat processing apparatus 有权
标题翻译：基板转印装置和立式热处理装置
公开(公告)号：US08167521B2
公开(公告)日：2012-05-01
申请号：US12225920
申请日：2007-04-23
申请人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
发明人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
IPC分类号： H01L21/677
CPC分类号： H01L21/67098 , H01L21/6838 , H01L21/68707
摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.
摘要翻译：本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。

10. 发明授权

US09297072B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09297072B2
公开(公告)日：2016-03-29
申请号：US12620750
申请日：2009-11-18
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , H01L21/67 , C23C16/40
CPC分类号： C23C16/4551 , C23C16/402 , C23C16/45551 , C23C16/45578 , H01L21/6719 , H01L21/67703
摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
摘要翻译：一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口，将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及排气单元构造成排出真空容器内的气氛。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式