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    • 23. 发明授权
    • Plasma etching method
    • 等离子蚀刻法
    • US08628676B2
    • 2014-01-14
    • US13638144
    • 2011-05-25
    • Naoya IkemotoTakashi YamamotoYoshiyuki Nozawa
    • Naoya IkemotoTakashi YamamotoYoshiyuki Nozawa
    • H01L21/3065
    • H01L21/3065H01L21/32137
    • A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
    • 提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。 使用含氟气体和氮气,同时从这些气体产生等离子体,并且通过等离子体蚀刻硅衬底K,同时通过等离子体在硅衬底K上形成耐蚀刻层,然后将氟 使用含气体和含氧气体,并且同时从这些气体产生等离子体,并且通过等离子体蚀刻硅衬底K,同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层 从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.