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1. 发明授权

US08628676B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08628676B2
公开(公告)日：2014-01-14
申请号：US13638144
申请日：2011-05-25
申请人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
发明人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/32137
摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
摘要翻译：提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.

2. 发明申请

US20130034961A1 Plasma Etching Method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20130034961A1
公开(公告)日：2013-02-07
申请号：US13638144
申请日：2011-05-25
申请人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
发明人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/32137
摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
摘要翻译：提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.

3. 发明申请

US20110303365A1 Plasma Etching Apparatus 审中-公开
标题翻译：等离子蚀刻装置
公开(公告)号：US20110303365A1
公开(公告)日：2011-12-15
申请号：US13203191
申请日：2010-07-16
申请人： Takashi Yamamoto , Naoya Ikemoto
发明人： Takashi Yamamoto , Naoya Ikemoto
IPC分类号： C23F1/08 , H05H1/24
CPC分类号： H01J37/32422 , H01J37/321 , H01J37/32357
摘要： The present invention relates to a plasma etching apparatus capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate. A plasma etching apparatus 1 has a processing chamber 11 in which the outer diameter of an upper chamber 12 is formed smaller than a lower chamber 13 and the upper chamber 12 is provided at the central portion of the top surface of the lower chamber 13, a grounded plate-shaped member 14 which is provided on the ceiling of the lower chamber 13 to divide the inner space of the processing chamber 11 and which has a plurality of through holes 14a penetrating from the top surface to the bottom surface thereof, a platen 16 which is disposed in the lower chamber 13 and on which a substrate K is placed, a gas supply device 20 for supplying an etching gas into the upper chamber 12, plasma generating devices 26, 29 for exciting etching gases in the upper chamber 12 and in the lower chamber 13 into a plasma, respectively, an exhaust device 35 for reducing the pressure within the processing chamber 11, and an RF power supply unit 32 for supplying RF power to the platen 16.
摘要翻译：本发明涉及能够均匀地蚀刻基板的整个表面的等离子体蚀刻装置，而与基板的种类无关。等离子体蚀刻装置1具有处理室11，其中上室12的外径形成为小于下室13，上室12设置在下室13的顶表面的中心部分，设置在下室13的天花板上以分隔处理室11的内部空间并且具有从顶表面贯穿其底表面的多个通孔14a的接地板状构件14，压板16 其设置在下室13中并且其上放置有基板K的气体供应装置20，用于将蚀刻气体供应到上室12中，等离子体产生装置26,29用于激发上室12中的蚀刻气体下室13分别成为等离子体，用于减小处理室11内的压力的排气装置35和用于向压板16提供RF功率的RF电源单元32。

4. 发明申请

US20140187048A1 Plasma Etching Method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20140187048A1
公开(公告)日：2014-07-03
申请号：US14237147
申请日：2012-08-16
申请人： Shoichi Murakami , Naoya Ikemoto
发明人： Shoichi Murakami , Naoya Ikemoto
IPC分类号： H01L21/04
CPC分类号： H01L21/0475 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76813 , H01L21/76822 , H01L29/1608
摘要： An object of the present invention is to provide a plasma etching method capable of forming a tapered recess portion in a wide-gap semiconductor substrate. As a solving means therefor, a high speed etching film E an etching speed of which is higher than that of a wide-gap semiconductor substrate K is formed on the wide-gap semiconductor substrate K, and a mask M having an opening is formed on the high speed etching film E. Thereafter, the wide-gap semiconductor substrate K having the high speed etching film E and the mask M formed thereon is placed on a platen and is heated to a temperature equal to or higher than 200° C., then a plasma is generated form an etching gas supplied into a processing chamber and a bias potential is applied to the platen, and thereby the wide-gap semiconductor substrate K is etched.
摘要翻译：本发明的目的是提供一种能够在宽间隙半导体衬底中形成锥形凹部的等离子体蚀刻方法。作为其解决手段，在宽间隙半导体基板K上形成蚀刻速度高于宽间隙半导体基板K的蚀刻速度的高速蚀刻膜E，并且具有开口的掩模M形成在高速蚀刻膜E.此后，将具有高速蚀刻膜E的宽间隙半导体衬底K和形成在其上的掩模M放置在压板上，并被加热到等于或高于200℃的温度，然后从供应到处理室中的蚀刻气体产生等离子体，并将偏压电位施加到压板，从而蚀刻宽间隙半导体衬底K.

5. 发明申请

US20070086143A1 Plasma generator and plasma etching apparatus 审中-公开
标题翻译：等离子体发生器和等离子体蚀刻装置
公开(公告)号：US20070086143A1
公开(公告)日：2007-04-19
申请号：US10596161
申请日：2004-11-29
申请人： Yasuyuki Hayashi , Shoichi Murakami , Takeshi Habe , Naoya Ikemoto
发明人： Yasuyuki Hayashi , Shoichi Murakami , Takeshi Habe , Naoya Ikemoto
IPC分类号： H01T23/00
CPC分类号： H01J37/3211 , H01J37/321
摘要： A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.
摘要翻译：提供一种等离子体发生器，用于产生在样品的圆周方向上具有均匀蚀刻速率的等离子体和能够在样品的圆周方向上均匀蚀刻的等离子体蚀刻装置。为了产生处理气体的等离子体，在保持预定压力的同时将处理气体引入等离子体发生室，并且向线圈施加高频交流电压。通过施加向基板电极施加交流电压，将等离子体发生室中产生的等离子体进入反应室，并对样品进行蚀刻。线圈未卷绕成均匀的螺旋形状。线圈的一圈具有水平地或大致水平地缠绕的第一绕组部分和以锐角倾斜地缠绕的第二绕组部分。

6. 发明授权

US09123542B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09123542B2
公开(公告)日：2015-09-01
申请号：US14237147
申请日：2012-08-16
申请人： Shoichi Murakami , Naoya Ikemoto
发明人： Shoichi Murakami , Naoya Ikemoto
IPC分类号： H01L21/04 , H01L21/768 , H01L21/3065 , H01L21/308 , H01L29/16
CPC分类号： H01L21/0475 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/76813 , H01L21/76822 , H01L29/1608
摘要： A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.
摘要翻译：等离子体蚀刻方法在宽间隙半导体衬底中形成锥形凹部。该方法包括在基板K上形成蚀刻速度高于基板K的蚀刻速度的蚀刻膜，并在高速蚀刻膜上形成具有开口的掩模M. 然后将具有蚀刻膜和掩模的基板K放置在压板上并加热至等于或高于200℃的温度，从供给到处理室中的蚀刻气体产生等离子体，偏置电位为施加到压板以蚀刻衬底。

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