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1. 发明授权

US08628676B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08628676B2
公开(公告)日：2014-01-14
申请号：US13638144
申请日：2011-05-25
申请人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
发明人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/32137
摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
摘要翻译：提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.

2. 发明申请

US20130034961A1 Plasma Etching Method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20130034961A1
公开(公告)日：2013-02-07
申请号：US13638144
申请日：2011-05-25
申请人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
发明人： Naoya Ikemoto , Takashi Yamamoto , Yoshiyuki Nozawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/32137
摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
摘要翻译：提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.

3. 发明申请

US20110303365A1 Plasma Etching Apparatus 审中-公开
标题翻译：等离子蚀刻装置
公开(公告)号：US20110303365A1
公开(公告)日：2011-12-15
申请号：US13203191
申请日：2010-07-16
申请人： Takashi Yamamoto , Naoya Ikemoto
发明人： Takashi Yamamoto , Naoya Ikemoto
IPC分类号： C23F1/08 , H05H1/24
CPC分类号： H01J37/32422 , H01J37/321 , H01J37/32357
摘要： The present invention relates to a plasma etching apparatus capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate. A plasma etching apparatus 1 has a processing chamber 11 in which the outer diameter of an upper chamber 12 is formed smaller than a lower chamber 13 and the upper chamber 12 is provided at the central portion of the top surface of the lower chamber 13, a grounded plate-shaped member 14 which is provided on the ceiling of the lower chamber 13 to divide the inner space of the processing chamber 11 and which has a plurality of through holes 14a penetrating from the top surface to the bottom surface thereof, a platen 16 which is disposed in the lower chamber 13 and on which a substrate K is placed, a gas supply device 20 for supplying an etching gas into the upper chamber 12, plasma generating devices 26, 29 for exciting etching gases in the upper chamber 12 and in the lower chamber 13 into a plasma, respectively, an exhaust device 35 for reducing the pressure within the processing chamber 11, and an RF power supply unit 32 for supplying RF power to the platen 16.
摘要翻译：本发明涉及能够均匀地蚀刻基板的整个表面的等离子体蚀刻装置，而与基板的种类无关。等离子体蚀刻装置1具有处理室11，其中上室12的外径形成为小于下室13，上室12设置在下室13的顶表面的中心部分，设置在下室13的天花板上以分隔处理室11的内部空间并且具有从顶表面贯穿其底表面的多个通孔14a的接地板状构件14，压板16 其设置在下室13中并且其上放置有基板K的气体供应装置20，用于将蚀刻气体供应到上室12中，等离子体产生装置26,29用于激发上室12中的蚀刻气体下室13分别成为等离子体，用于减小处理室11内的压力的排气装置35和用于向压板16提供RF功率的RF电源单元32。

4. 发明申请

US20110097903A1 METHOD, APPARATUS AND PROGRAM FOR MANUFACTURING SILICON STRUCTURE 有权
标题翻译：方法，制造硅结构的装置和程序
公开(公告)号：US20110097903A1
公开(公告)日：2011-04-28
申请号：US12997942
申请日：2009-04-08
申请人： Yoshiyuki Nozawa , Takashi Yamamoto
发明人： Yoshiyuki Nozawa , Takashi Yamamoto
IPC分类号： H01L21/3065 , G06F17/00
CPC分类号： B81C1/00619 , B81B2203/033 , B81C1/00531 , B81C1/00626 , B81C2201/0132 , B81C2201/014 , H01L21/3065 , H01L21/30655
摘要： A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
摘要翻译：根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分，速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

5. 发明授权

US08518283B2 Plasma etching method capable of detecting end point and plasma etching device therefor 有权
标题翻译：能够检测端点和等离子体蚀刻装置的等离子体蚀刻方法
公开(公告)号：US08518283B2
公开(公告)日：2013-08-27
申请号：US12089474
申请日：2007-07-27
申请人： Takashi Yamamoto , Masahiko Tanaka , Yoshiyuki Nozawa , Shoichi Murakami
发明人： Takashi Yamamoto , Masahiko Tanaka , Yoshiyuki Nozawa , Shoichi Murakami
IPC分类号： G01R31/00
CPC分类号： H01J37/32963 , H01J37/32935 , H01J2237/3343 , H01L21/3065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
摘要翻译：本发明涉及一种等离子体蚀刻方法，其中不需要设置用于检测终点的特殊区域及其设备。在将SF 6气体形成等离子体以蚀刻Si膜上的蚀刻研磨的蚀刻步骤中，该步骤由以下两个步骤构成：供给大量SF 6气体的大量供给步骤; 以及供给少量的SF 6气体的小量供给工序。终点检测处理器34在小量供给步骤中测量等离子体中的Si或SiFx的发射强度，并且当测量的发射强度变得等于或小于预先设定的参考值时，确定达到蚀刻终点值。

6. 发明授权

US08546265B2 Method, apparatus and program for manufacturing silicon structure 有权
标题翻译：制造硅结构的方法，装置和程序
公开(公告)号：US08546265B2
公开(公告)日：2013-10-01
申请号：US12997942
申请日：2009-04-08
申请人： Yoshiyuki Nozawa , Takashi Yamamoto
发明人： Yoshiyuki Nozawa , Takashi Yamamoto
IPC分类号： H01L21/3065 , B81C1/00
CPC分类号： B81C1/00619 , B81B2203/033 , B81C1/00531 , B81C1/00626 , B81C2201/0132 , B81C2201/014 , H01L21/3065 , H01L21/30655
摘要： A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
摘要翻译：根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分，速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

7. 发明申请

US20120006490A1 Plasma Etching Apparatus 审中-公开
标题翻译：等离子蚀刻装置
公开(公告)号：US20120006490A1
公开(公告)日：2012-01-12
申请号：US13145228
申请日：2009-12-10
申请人： Takashi Yamamoto , Yoshiyuki Nozawa
发明人： Takashi Yamamoto , Yoshiyuki Nozawa
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/32623
摘要： The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10. While plasma passes through the plasma density adjusting member 20, the in-plane density of the plasma is equalized, and then the plasma is guided to the substrate K.
摘要翻译：本发明涉及能够均匀地蚀刻基板的整个表面的蚀刻装置，即使基板尺寸大，并且不会发生蚀刻形状的劣化。蚀刻装置1具有具有等离子体产生空间9和处理空间6的腔室2，设置在与等离子体产生空间9相对应的部分的外侧的线圈16，设置在处理空间6中的压板10和在其上放置基板K的处理气体供给机构19，用于向等离子体产生空间9供给处理气体的处理气体供给机构19，用于向线圈16供给RF功率的RF电力供给机构17以及用于压板的供电机构 13，用于向压板10提供RF功率。由等离子体产生空间9和压板10之间的室2的内壁上固定地设置由接地的导电材料制成的圆柱形等离子体浓度调节构件20.当等离子体通过时通过等离子体密度调节构件20使等离子体的面内密度相等，然后将等离子体引导到基板K.

8. 发明申请

US20090277872A1 PLASMA ETCHING METHOD CAPABLE OF DETECTING END POINT AND PLASMA ETCHING DEVICE THEREFOR 有权
标题翻译：能够检测端点和等离子体蚀刻装置的等离子体蚀刻方法
公开(公告)号：US20090277872A1
公开(公告)日：2009-11-12
申请号：US12089474
申请日：2007-07-27
申请人： Takashi Yamamoto , Masahiko Tanaka , Yoshiyuki Nozawa , Shoichi Murakami
发明人： Takashi Yamamoto , Masahiko Tanaka , Yoshiyuki Nozawa , Shoichi Murakami
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32963 , H01J37/32935 , H01J2237/3343 , H01L21/3065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
摘要翻译：本发明涉及一种等离子体蚀刻方法，其中不需要设置用于检测终点的特殊区域及其设备。在将SF 6气体形成等离子体以蚀刻Si膜上的蚀刻研磨的蚀刻步骤中，该步骤由以下两个步骤构成：供给大量SF 6气体的大量供给步骤; 以及供给少量的SF 6气体的小量供给工序。终点检测处理器34在小量供给步骤中测量等离子体中的Si或SiFx的发射强度，并且当测量的发射强度变得等于或小于预先设定的参考值时，确定达到蚀刻终点值。

9. 发明授权

US10239106B2 Spinning method and spinning apparatus 有权
公开(公告)号：US10239106B2
公开(公告)日：2019-03-26
申请号：US14781151
申请日：2014-04-01
申请人： Yukitaka Kunimoto , Satoshi Shionoya , Takashi Yamamoto
发明人： Yukitaka Kunimoto , Satoshi Shionoya , Takashi Yamamoto
IPC分类号： B21D22/14 , B21D22/16 , B21D22/18
摘要： A spinning method includes supporting a supported portion of a cylindrical work by a work supporting portion; pressing a first roller of a spinning head against a processed portion of the work while revolving the first roller; and performing a forming process that points a tube axis of the processed portion of the work in a given direction by pressing the first roller and a second roller in which a plane of revolution thereof is provided in a different position, in a rotational axis direction of a spindle of the spinning head, than a plane of revolution of the first roller, while revolving the first roller and the second roller, and moving the work supporting portion relative to the spinning head or moving the spinning head relative to the work supporting portion, while the first roller and the second roller work in cooperation with each other to retain the work.

10. 发明授权

US09176311B2 Microscope control device and optical distortion correction method 有权
标题翻译：显微镜控制装置和光学畸变校正方法
公开(公告)号：US09176311B2
公开(公告)日：2015-11-03
申请号：US13192803
申请日：2011-07-28
申请人： Takashi Yamamoto
发明人： Takashi Yamamoto
IPC分类号： H04N7/18 , G02B21/14
CPC分类号： G02B21/14
摘要： A microscope control device includes an offset processing unit that corrects phase contrast information regarding a phase contrast between corresponding phase contrast images, which is generated based on a set of the phase contrast images of a sample which are captured by a microscope, based on offset information of phase contrasts caused by optical distortions unique to the microscope, and a defocus amount calculation unit that calculates a defocus amount of the sample on the basis of the phase contrast information after offset correction.
摘要翻译：显微镜控制装置包括偏移处理单元，该偏移处理单元基于偏移信息校正基于由显微镜拍摄的样本的一组相位对比图像而生成的相应对比图像之间的相位对比度的相位对比度信息由显微镜独有的光学失真引起的相位对比度，以及散焦量计算单元，其基于偏移校正后的相位差信息来计算样本的散焦量。

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