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    • 24. 发明申请
    • Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    • 形成单晶金属硅化物纳米线和所得纳米线结构的方法
    • US20080193359A1
    • 2008-08-14
    • US11707601
    • 2007-02-13
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • C01B21/068
    • C30B29/10C30B29/60
    • Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.
    • 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括大致单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。