专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08431472B2 Semiconductor device fabrication using gate substitution 有权
标题翻译：使用栅极替代的半导体器件制造
公开(公告)号：US08431472B2
公开(公告)日：2013-04-30
申请号：US13174257
申请日：2011-06-30
申请人： Chang Seo Park
发明人： Chang Seo Park
IPC分类号： H01L21/44
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/823842
摘要： Methods is provided for forming a CMOS device. The method includes providing a substrate and depositing a gate stack on the substrate. The gate stack includes a gate dielectric and a dummy gate including polycrystalline silicon (polySi). The method also includes depositing a dielectric layer on the substrate after depositing the gate stack on the substrate. The method further includes substituting the dummy gate with a metal without first removing the dummy gate.
摘要翻译：提供了用于形成CMOS器件的方法。该方法包括提供衬底并在衬底上沉积栅叠层。栅极堆叠包括栅极电介质和包括多晶硅（polySi）的虚拟栅极。该方法还包括在将栅极堆叠沉积在衬底上之后，在衬底上沉积电介质层。该方法还包括在没有首先去除虚拟栅极的情况下用金属代替虚拟栅极。

22. 发明申请

US20130040450A1 Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure 有权
标题翻译：在金属栅极结构上形成介电盖层的方法
公开(公告)号：US20130040450A1
公开(公告)日：2013-02-14
申请号：US13205050
申请日：2011-08-08
申请人： Ruilong Xie , Chang Seo Park , William James Taylor, JR. , John Iacoponi
发明人： Ruilong Xie , Chang Seo Park , William James Taylor, JR. , John Iacoponi
IPC分类号： H01L21/28
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/6659
摘要： Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.
摘要翻译：本文公开了在半导体器件的栅极结构的金属层上形成含金属的绝缘材料区域的各种方法。在一个示例中，该方法包括形成晶体管的栅极结构，栅极结构至少包括第一金属层，并且通过执行气体簇离子束过程，在第一金属层中形成第一含金属绝缘材料区域将气体分子注入第一金属层。

23. 发明申请

US20120055177A1 Air conditioner and control method thereof 审中-公开
标题翻译：空调及其控制方法
公开(公告)号：US20120055177A1
公开(公告)日：2012-03-08
申请号：US13137585
申请日：2011-08-26
申请人： Sung Goo Kim , Jae Hyuk Oh , Seong Je Wu , Dong Woon Jeong , Yong Hyun Jeon , Chang Seo Park
发明人： Sung Goo Kim , Jae Hyuk Oh , Seong Je Wu , Dong Woon Jeong , Yong Hyun Jeon , Chang Seo Park
IPC分类号： F25B29/00 , F25B41/04
CPC分类号： F24F3/065 , F24D3/08 , F24D11/0214 , F24D15/04 , F24D17/02 , F24D19/1039 , F24D19/1054 , F24D19/1087 , F24D2200/123 , F24F11/83 , F24H6/00 , F25B13/00 , F25B2313/003 , F25B2313/0231 , F25B2313/0314 , F25B2600/2513 , F25B2700/04 , F25B2700/21152 , Y02B30/12
摘要： An air conditioner controls supply of refrigerant so that the refrigerant is first supplied to one or more indoor units in operation from an outdoor unit, and is then supplied to a hot water generator, thereby sufficiently supplying refrigerant to the indoor units in heating operation even when the hot water generator is operated.
摘要翻译：空调器控制制冷剂的供应，使得制冷剂首先从室外单元供应到一个或多个室内单元，然后被供应到热水发生器，由此即使当制冷剂热水发生器运行。

24. 发明申请

US20110203298A1 Heat pump system and control method thereof 审中-公开
标题翻译：热泵系统及其控制方法
公开(公告)号：US20110203298A1
公开(公告)日：2011-08-25
申请号：US12929574
申请日：2011-02-01
申请人： Sung Goo Kim , Jae Hyuk Oh , Dong Woon Jeong , Chang Seo Park
发明人： Sung Goo Kim , Jae Hyuk Oh , Dong Woon Jeong , Chang Seo Park
IPC分类号： F25B30/02 , F25B41/00 , F25B41/04
CPC分类号： F25B30/02 , F24H4/04 , F24H9/2021 , F25B2339/047 , F25B2600/0253 , F25B2600/2513 , F25B2700/21161 , Y02B30/741
摘要： A heat pump system, the operation of which is controlled using a temperature difference between a water inlet and a water outlet of a heat exchanger, exchanging heat between a refrigerant and water, and a control method thereof. The heat pump system includes temperature sensors installed on a water circulation pipe unit at water inlet and outlet sides of a heat exchanger, and heats a load to a set temperature by controlling a compressor or an expander according to a difference between temperatures sensed by the temperature sensors. Here, a temperature of water transmitted to the load is set to be greater than a target load temperature by a reference value, and if the temperature difference is smaller than a designated value, the operation of the heat pump system is stopped.
摘要翻译：一种热泵系统，其操作使用热交换器的进水口和出水口之间的温度差进行控制，在制冷剂和水之间进行热交换及其控制方法。热泵系统包括温度传感器，其安装在热交换器的进水口和出口侧的水循环管单元上，并且通过根据温度感测到的温度差来控制压缩机或膨胀机将负载加热到设定温度传感器。这里，传递到负载的水的温度被设定为大于目标负载温度的基准值，如果温度差小于指定值，则停止热泵系统的动作。

25. 发明申请

US20050123492A1 Composition for skin whitening containing lysophosphatidylethanolamine as an active ingredient 审中-公开
标题翻译：含有溶血磷脂酰乙醇胺作为活性成分的皮肤美白组合物
公开(公告)号：US20050123492A1
公开(公告)日：2005-06-09
申请号：US10503200
申请日：2003-01-29
申请人： Guk Hoon Chung , Young Sei Park , Wang Keun Choi , Chang Seo Park
发明人： Guk Hoon Chung , Young Sei Park , Wang Keun Choi , Chang Seo Park
IPC分类号： A61K8/00 , A61K8/30 , A61K8/49 , A61K8/55 , A61K8/58 , A61K8/96 , A61K8/97 , A61Q19/00 , A61Q19/02 , A61K7/135 , A61K7/06
CPC分类号： A61Q19/02 , A61K8/553
摘要： Lysophosphatidylethanolamine has skin whitening ability and thus a composition containing lysophosphatidylethanolamine as an active ingredient can be used to relieve hyperpigmentation or discoloration. The composition containing lysophosphatidylethanolamine can also induce moisturizing effect on skin, is very safe, and very stable.
摘要翻译：溶血磷脂酰乙醇胺具有皮肤美白能力，因此含有溶血磷脂酰乙醇胺作为活性成分的组合物可用于缓解色素沉着过度或变色。含有溶血磷脂酰乙醇胺的组合物也可以诱导对皮肤的保湿作用，非常安全，非常稳定。

26. 发明授权

US06638735B1 Plasmid for gene expression in pichia ciferrii and transformation method using the same 失效
标题翻译：在毕赤酵母中用于基因表达的质粒及使用其的转化方法
公开(公告)号：US06638735B1
公开(公告)日：2003-10-28
申请号：US09674826
申请日：2001-07-17
申请人： Sang Ki Rhee , Jung Hoon Bae , Eui Sung Choi , Jung Hoon Sohn , Hyun Ah Kang , Chang Seo Park
发明人： Sang Ki Rhee , Jung Hoon Bae , Eui Sung Choi , Jung Hoon Sohn , Hyun Ah Kang , Chang Seo Park
IPC分类号： C12P2106
CPC分类号： C07K14/39
摘要： Expression cassettes for transforming Pichia ciferrii and their use are disclosed. The present invention relates to expression cassettes containing Pichia ciferrii ribosomal DNA fragment, CYHr gene resistant to cycloheximide, and a desired gene. Expression cassette further comprising Pichia ciferrii GAPDH promoter gene which allows an increase in the expression of the desired gene also provided. Moreover, the present invention provides a process for producing tetraacetyl phytosphingosine using transformed Pichia ciferrii cells with the expression cassettes in a higher yield.
摘要翻译：公开了用于转化毕赤酵母的表达盒及其用途。本发明涉及含有毕赤酵母核糖体DNA片段，对放线菌酮具有抗性的CYHr基因和所需基因的表达盒。进一步包含允许增加所需基因表达的毕赤酵母GAPDH启动子基因的表达盒也被提供。此外，本发明提供了使用转化的毕赤酵母细胞以更高产率用表达盒生产四乙酰植物鞘氨醇的方法。

27. 发明授权

US06355516B1 Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer 失效
标题翻译：在半导体器件中制造具有双层Ta 2 O 5电容器电介质的电容器的方法，包括对第一Ta 2 O 5层进行等离子体处理
公开(公告)号：US06355516B1
公开(公告)日：2002-03-12
申请号：US09606411
申请日：2000-06-29
申请人： You Sung Kim , Kyong Min Kim , Chang Seo Park , Han Sang Song , Ki Seon Park , Chan Lim
发明人： You Sung Kim , Kyong Min Kim , Chang Seo Park , Han Sang Song , Ki Seon Park , Chan Lim
IPC分类号： H01L218242
CPC分类号： H01L21/31604 , H01L21/28568 , H01L28/56 , Y10S438/957
摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta2O5 film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta2O5 film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta2O5 film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta2O5 film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta2O5 film on the metal layer, wherein the process of depositing the Ta2O5 film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta2O5 film.
摘要翻译：公开了一种在半导体器件中制造电容器的方法，其能够通过在形成Ta 2 O 5膜的过程中使用氮和氧的混合气体进行原位等离子体处理来有效地除去Ta 2 O 5膜的有机杂质，作为电容器的介质膜。因此，可以减少Ta2O5薄膜的杂质，增加氧气供应，从而可以提高Ta2O5薄膜的介电和漏电流特性。此外，它可以禁止底层电极的氧化，从而尽可能地减小电容器的等效氧化膜的厚度，并充分确保电容器的电容。根据本发明的方法包括在其中形成给定的底层结构的半导体衬底上形成多晶硅膜; 在多晶硅膜上依次形成第一缓冲层和金属层，形成下电极; 在金属层上形成Ta2O5膜，其中在氮和氧的混合气体气氛下通过等离子体工艺进行沉积Ta2O5膜的工艺; 并在Ta 2 O 5膜上形成第二缓冲层和上电极。

28. 发明授权

US06303427B1 Method of manufacturing a capacitor in a semiconductor device 失效
标题翻译：在半导体器件中制造电容器的方法
公开(公告)号：US06303427B1
公开(公告)日：2001-10-16
申请号：US09659508
申请日：2000-09-11
申请人： Han Sang Song , You Sung Kim , Chan Lim , Chang Seo Park , Kyong Min Kim
发明人： Han Sang Song , You Sung Kim , Chan Lim , Chang Seo Park , Kyong Min Kim
IPC分类号： H01L21336
CPC分类号： H01L28/40 , H01L21/31604 , H01L28/56 , H01L28/60
摘要： The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta2O5 to form a dielectric film in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta2O5 dielectric film and then performing deposition and thermal process of Ta2O5 to form a Ta2O5 dielectric film. As a good WO3 film is formed on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta2O5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.
摘要翻译：本发明涉及一种在半导体器件中制造电容器的方法。其设计用于解决在沉积Ta 2 O 5之后进行的热处理期间底层钨电极的表面的氧化的问题，以在使用钨（W）作为（W）的MIM（金属绝缘体金属）结构的MIM（金属绝缘体金属）结构的Ta 2 O 5电容器中形成介电膜底层电极。因此，本发明包括通过在形成Ta 2 O 5介电膜之前通过低氧化处理来处理下面的钨电极的表面，然后进行Ta 2 O 5的沉积和热处理以形成Ta 2 O 5电介质膜来形成良好的薄WO 3膜。由于在形成Ta 2 O 5电介质膜之前在下面的钨电极的表面上形成良好的WO 3膜，所以钨膜的晶界被氧原子填充，从而防止在随后的热过程中氧原子从Ta 2 O 5介电膜扩散处理。此外，通过WO 3膜可以防止下层钨电极的表面的进一步氧化，从而提高Ta2O5电容器的漏电流的特性。

29. 发明授权

US6114241A Method of manufacturing a semiconductor device capable of reducing contact resistance 有权
标题翻译：制造能够降低接触电阻的半导体器件的方法
公开(公告)号：US6114241A
公开(公告)日：2000-09-05
申请号：US338525
申请日：1999-06-23
申请人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
发明人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76814
摘要： The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO.sub.3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO.sub.3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH.sub.4 OH solution. The effective removal of the WO.sub.3 film reduces the contact resistance between a conductive material layer to be formed in he contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO.sub.3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.
摘要翻译：本发明涉及一种制造半导体器件的方法，该方法能够有效地除去在接触孔蚀刻期间在硅化钨上产生的WO 3膜，其通过选择性地蚀刻层间绝缘体来打开包括硅化钨作为其顶部膜的栅电极电影。通过使用碱性溶液如TMAH（四甲基氢氧化铵）或NH 4 OH溶液的洗涤方法除去WO 3膜。 WO3膜的有效去除通过后续工艺在接触孔中形成的导电材料层与栅电极之间的接触电阻降低，从而提高半导体器件的操作特性。在洗涤过程中使用的TMAH溶液相对于通常用作层间绝缘膜的热氧化膜或BPSG膜具有高选择性的WO 3膜。因此，本发明能够最小化接触蚀刻后的洗涤工序中的层间绝缘膜的侧面部分的损伤。

30. 发明申请

US20140065811A1 REPLACEMENT METAL GATE SEMICONDUCTOR DEVICE FORMATION USING LOW RESISTIVITY METALS 有权
标题翻译：使用低电阻金属替代金属栅极半导体器件形成
公开(公告)号：US20140065811A1
公开(公告)日：2014-03-06
申请号：US13603726
申请日：2012-09-05
申请人： Chang Seo Park , Vimal K. Kamineni
发明人： Chang Seo Park , Vimal K. Kamineni
IPC分类号： H01L29/40
CPC分类号： H01L29/401 , H01L29/66545 , H01L29/66795
摘要： Embodiments of the present invention relate to approaches for forming RMG FinFET semiconductor devices using a low-resistivity metal (e.g., W) as an alternate gap fill metal. Specifically, the semiconductor will typically comprise a set (e.g., one or more) of dielectric stacks formed over a substrate to create one or more trenches/channels (e.g., short/narrow and/or long/wide trenches/channels). A work function layer (e.g., TiN) will be provided over the substrate (e.g., in and around the trenches). A low-resistivity metal gate layer (e.g., W) may then be deposited (e.g., via chemical vapor deposition) and polished (e.g., via chemical-mechanical polishing). Thereafter, the gate metal layer and the work function layer may be etched after the polishing to provide a trench having the etched gate metal layer over the etched work function layer along a bottom surface thereof.
摘要翻译：本发明的实施例涉及使用低电阻率金属（例如W）作为替代间隙填充金属形成RMG FinFET半导体器件的方法。具体地，半导体通常将包括形成在衬底上以形成一个或多个沟槽（例如，短/窄和/或长/宽沟槽/沟道）的一组（例如，一个或多个）电介质叠层。工作功能层（例如，TiN）将被提供在衬底上（例如，在沟槽中和周围）。然后可以沉积低电阻金属栅极层（例如，W）（例如通过化学气相沉积）并抛光（例如，经由化学机械抛光）。此后，可以在抛光之后蚀刻栅极金属层和功函数层，以沿着其底表面在蚀刻的功函数层上方提供具有蚀刻的栅极金属层的沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式