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1. 发明授权

US08722491B2 Replacement metal gate semiconductor device formation using low resistivity metals 有权
标题翻译：使用低电阻率金属的替代金属栅极半导体器件形成
公开(公告)号：US08722491B2
公开(公告)日：2014-05-13
申请号：US13603726
申请日：2012-09-05
申请人： Chang Seo Park , Vimal K. Kamineni
发明人： Chang Seo Park , Vimal K. Kamineni
IPC分类号： H01L21/8234 , H01L21/3205 , H01L21/4763 , H01L21/336 , H01L21/44
CPC分类号： H01L29/401 , H01L29/66545 , H01L29/66795
摘要： Embodiments of the present invention relate to approaches for forming RMG FinFET semiconductor devices using a low-resistivity metal (e.g., W) as an alternate gap fill metal. Specifically, the semiconductor will typically comprise a set (e.g., one or more) of dielectric stacks formed over a substrate to create one or more trenches/channels (e.g., short/narrow and/or long/wide trenches/channels). A work function layer (e.g., TiN) will be provided over the substrate (e.g., in and around the trenches). A low-resistivity metal gate layer (e.g., W) may then be deposited (e.g., via chemical vapor deposition) and polished (e.g., via chemical-mechanical polishing). Thereafter, the gate metal layer and the work function layer may be etched after the polishing to provide a trench having the etched gate metal layer over the etched work function layer along a bottom surface thereof.
摘要翻译：本发明的实施例涉及使用低电阻率金属（例如W）作为替代间隙填充金属形成RMG FinFET半导体器件的方法。具体地，半导体通常将包括形成在衬底上以形成一个或多个沟槽（例如，短/窄和/或长/宽沟槽/沟道）的一组（例如，一个或多个）电介质叠层。工作功能层（例如，TiN）将被提供在衬底上（例如，在沟槽中和周围）。然后可以沉积低电阻金属栅极层（例如，W）（例如通过化学气相沉积）并抛光（例如，经由化学机械抛光）。此后，可以在抛光之后蚀刻栅极金属层和功函数层，以沿着其底表面在蚀刻的功函数层上方提供具有蚀刻的栅极金属层的沟槽。

2. 发明申请

US20130043592A1 Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same 审中-公开
标题翻译：形成由硅和包括其的器件组成的替代栅极的方法
公开(公告)号：US20130043592A1
公开(公告)日：2013-02-21
申请号：US13213449
申请日：2011-08-19
申请人： Chang Seo Park , Jin Cho
发明人： Chang Seo Park , Jin Cho
IPC分类号： H01L29/49 , H01L21/28
CPC分类号： H01L29/4966 , H01L21/76897 , H01L29/66545 , H01L29/7833
摘要： Disclosed herein are various methods of forming a replacement gate comprised of silicon and various semiconductor devices incorporation such a replacement gate structure. In one example, the method includes removing a sacrificial gate electrode structure to define a gate opening, forming a replacement gate structure in the gate opening, the replacement gate structure including at least one metal layer and a silicon-containing gate structure that is at least partially made of a metal silicide and forming a protective layer above at least a portion of the replacement gate structure.
摘要翻译：本文公开了形成由硅构成的替代栅极和结合这种替代栅极结构的各种半导体器件的各种方法。在一个示例中，该方法包括去除牺牲栅极电极结构以限定栅极开口，在栅极开口中形成替代栅极结构，所述替换栅极结构至少包括一个金属层和至少含有硅的栅极结构部分地由金属硅化物制成并在替代栅极结构的至少一部分上方形成保护层。

3. 发明申请

US20130005131A1 SEMICONDUCTOR DEVICE FABRICATION USING GATE SUBSTITUTION 有权
标题翻译：使用栅极替代的半导体器件制造
公开(公告)号：US20130005131A1
公开(公告)日：2013-01-03
申请号：US13174257
申请日：2011-06-30
申请人： Chang Seo Park
发明人： Chang Seo Park
IPC分类号： H01L21/28
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/823842
摘要： Methods is provided for forming a CMOS device. The method includes providing a substrate and depositing a gate stack on the substrate. The gate stack includes a gate dielectric and a dummy gate including polycrystalline silicon (polySi). The method also includes depositing a dielectric layer on the substrate after depositing the gate stack on the substrate. The method further includes substituting the dummy gate with a metal without first removing the dummy gate.
摘要翻译：提供了用于形成CMOS器件的方法。该方法包括提供衬底并在衬底上沉积栅叠层。栅极堆叠包括栅极电介质和包括多晶硅（polySi）的虚拟栅极。该方法还包括在将栅极堆叠沉积在衬底上之后，在衬底上沉积电介质层。该方法还包括在没有首先去除虚拟栅极的情况下用金属代替虚拟栅极。

4. 发明申请

US20090068150A1 LACTIC ACID BACTERIA CULTURE OF MUNG BEAN AND THE PREPARATION METHOD OF THE SAME, AND THE COSMETIC COMPOSITION COMPRISING THE SAME 审中-公开
标题翻译：芒果酸乳酸菌培养基及其制备方法及其化妆品组合物
公开(公告)号：US20090068150A1
公开(公告)日：2009-03-12
申请号：US11994866
申请日：2006-07-07
申请人： Chang-Seo Park , Sang-June Nam , Wang-Keun Choi , Yu-Ryang Pyun , Hyung-Yong Cho , Seok-Cheol Cho , Moo-Chang Kook , Chang-Woo Lee , So-Young Chung
发明人： Chang-Seo Park , Sang-June Nam , Wang-Keun Choi , Yu-Ryang Pyun , Hyung-Yong Cho , Seok-Cheol Cho , Moo-Chang Kook , Chang-Woo Lee , So-Young Chung
IPC分类号： C12N1/20 , A61K8/99 , A61P17/00 , A61P19/02 , A61P29/00 , A61Q19/00
CPC分类号： A61K36/48 , A61K8/44 , A61K8/97 , A61K8/99 , A61K31/197 , A61K2800/805 , A61K2800/85 , A61Q19/00 , A61Q19/08
摘要： Disclosed is a lactic acid bacteria culture of mung bean obtained by culturing lactic acid bacteria in a culture medium containing mung bean extract. The culture contains the mung bean extract and GABA (ϝ˜ Aminobutyric acid), so that it exhibits effects of promoting collagen synthesis and alleviating inflammation. Accordingly, the cosmetic composition containing the culture can be usefully used as a cosmetic composition for promoting collagen biosynthesis, preventing or improving skin senescence, anti-inflammatory and preventing or improving skin injury.
摘要翻译：公开了通过在含有绿豆提取物的培养基中培养乳酸菌获得的绿豆乳酸菌培养物。培养物含有绿豆提取物和GABA（γ-氨基丁酸），具有促进胶原合成和减轻炎症的作用。因此，含有培养物的化妆品组合物可用作促进胶原生物合成，预防或改善皮肤衰老，抗炎和预防或改善皮肤损伤的化妆品组合物。

5. 发明申请

US20080051369A1 Skin Cosmetic Material 审中-公开
标题翻译：皮肤化妆品
公开(公告)号：US20080051369A1
公开(公告)日：2008-02-28
申请号：US11791612
申请日：2005-11-10
申请人： Shu Uemura , Chihiro Kaise , Teruhisa Kaneko , Hyung-Jun Kang , Sang-woo Cho , Chang-Seo Park
发明人： Shu Uemura , Chihiro Kaise , Teruhisa Kaneko , Hyung-Jun Kang , Sang-woo Cho , Chang-Seo Park
IPC分类号： A61K8/68 , A61Q1/00 , A61Q19/00
CPC分类号： A61Q19/00 , A61K8/68
摘要： [Object] To provide a cosmetic material having a superior moisture evaporation suppression ability and a high absorbed water volume. [Solving Means] A cosmetic material contains sphingomyelin, and hence a high moisture evaporation suppression ability and a high absorbed water volume can be obtained.
摘要翻译：提供具有优异的水分蒸发抑制能力和高吸收水体积的化妆品材料。 [解决方案]化妆品材料含有鞘磷脂，因此可以获得高水分蒸发抑制能力和高吸收水体积。

6. 发明授权

US07316950B2 Method of fabricating a CMOS device with dual metal gate electrodes 失效
标题翻译：制造具有双金属栅电极的CMOS器件的方法
公开(公告)号：US07316950B2
公开(公告)日：2008-01-08
申请号：US10826665
申请日：2004-04-16
申请人： Chang Seo Park , Byung Jin Cho , Narayanan T. Balasubramanian
发明人： Chang Seo Park , Byung Jin Cho , Narayanan T. Balasubramanian
IPC分类号： H01L21/8238
CPC分类号： H01L29/513 , H01L21/28079 , H01L21/823842 , H01L29/495 , H01L29/517 , H01L29/518
摘要： A method of constructing a dual metal gate CMOS structure that uses an ultra thin aluminum nitride (AINx) buffer layer between the metal gate and gate dielectric during processing for preventing the gate dielectric from being exposed in the metal etching process. After the unwanted gate metal is etched away, the CMOS structure is annealed. During the annealing, the buffer layer is completely consumed through reaction with the metal gate and a new metal alloy is formed, resulting in only a minimal increase in the equivalent oxide thickness. The buffer layer and gate metals play a key role in determining the work functions of the metal/dielectric interface, since the work functions of the original gate metals are modified as a result of the annealing process.
摘要翻译：一种构造双金属栅极CMOS结构的方法，其在处理期间在金属栅极和栅极电介质之间使用超薄氮化铝（AlN x×x））缓冲层，以防止栅极电介质暴露在金属中蚀刻工艺。在不需要的栅极金属被蚀刻掉之后，CMOS结构退火。在退火过程中，缓冲层通过与金属栅极的反应而完全消耗，并形成新的金属合金，导致等效氧化物厚度的最小增加。缓冲层和栅极金属在确定金属/电介质界面的功函数方面发挥关键作用，因为原始栅极金属的功函数作为退火过程的结果而被修改。

7. 发明授权

US06964952B2 Therapeutic composition for broad spectrum dermal disease 有权
标题翻译：广谱皮肤病治疗组合物
公开(公告)号：US06964952B2
公开(公告)日：2005-11-15
申请号：US10662002
申请日：2003-09-12
申请人： Chang Seo Park , Jin Wook Kim , Jin Hee Choi , Ui Chan Koh
发明人： Chang Seo Park , Jin Wook Kim , Jin Hee Choi , Ui Chan Koh
IPC分类号： A61K31/047 , A61K31/133 , A61K31/66
CPC分类号： A61K31/047 , A61K31/133 , A61K31/66 , Y10S514/88 , Y10S514/882 , A61K2300/00
摘要： The invention relates to a therapeutic composition for broad spectrum dermal disease and in particular, to a composition comprising principal lipid components of skin, preferably having about 30 to 90% by weight of a carrier for applying to skin; 0.01 to 5.0% by weight of sphingolipid long-chain base; 0.001 to 1.0% by weight of lysophosphatidic acid; and 1 to 40% by weight of organic or inorganic additives. The composition is useful for the treatment and improvement of atopic dermatitis, psoriasis, acne, ichthyosis, infectious dermatitis, pruritus, erythema derived from pruritus, vulnus, chapping of skin and ulcer, etc.
摘要翻译：本发明涉及用于广谱皮肤病的治疗组合物，特别涉及一种包含皮肤主要脂质组分的组合物，优选具有约30至90重量％的施用于皮肤的载体; 0.01〜5.0％重量的鞘脂长链碱; 0.001至1.0重量％的溶血磷脂酸; 和1至40重量％的有机或无机添加剂。该组合物可用于治疗和改善特应性皮炎，牛皮癣，痤疮，鱼鳞病，感染性皮炎，瘙痒，源自瘙痒，外阴，皮肤和溃疡等的红斑等。

8. 发明申请

US20050143346A1 Composition for treating cancer containing n,n-dimethylphytosphingosine 审中-公开
标题翻译：用于治疗含有n，n-二甲基苯并孕酮的癌症的组合物
公开(公告)号：US20050143346A1
公开(公告)日：2005-06-30
申请号：US10512126
申请日：2003-05-01
申请人： Jin-Hee Choi , Chang-Seo Park , Jin-Wook Kim , Chang-Yeol Park , You-A Hwang , Eun-Ju Kim , Ui-Chan Koh
发明人： Jin-Hee Choi , Chang-Seo Park , Jin-Wook Kim , Chang-Yeol Park , You-A Hwang , Eun-Ju Kim , Ui-Chan Koh
IPC分类号： A61K45/00 , A61K31/133 , A61K45/06 , A61P17/06 , A61P29/00 , A61P31/04 , A61P35/00 , A61P43/00 , C07C213/02 , C07C213/08 , C07C215/10 , C07F9/02 , A61K31/685
CPC分类号： A61K45/06 , A61K31/133 , C07C213/08 , C07C215/10
摘要： A composition and a kit for treating cancer comprising N,N-dimethylphytosphingosine. The composition represses the activity of sphingosine kinase, and therefore, intercepts various mechanisms which sphingosine kinase induces. For example, the composition blocks the phosphorylation of ceramide and sphingosine, thereby maintaining high concentration of ceramide and sphingosine. The ceramide and sphingosine induce apoptosis in cancer cells. Therefore, the composition according to the present invention induces apoptosis in cancer cells and accordingly kills the cancer cells.
摘要翻译：用于治疗癌症的组合物和试剂盒，其包含N，N-二甲基苯并卟吩苷。组合物抑制鞘氨醇激酶的活性，因此拦截鞘氨醇激酶诱导的各种机制。例如，组合物阻断神经酰胺和鞘氨醇的磷酸化，从而保持高浓度的神经酰胺和鞘氨醇。神经酰胺和鞘氨醇诱导癌细胞凋亡。因此，根据本发明的组合物诱导癌细胞凋亡，因此杀死癌细胞。

9. 发明授权

US08409466B2 Composition comprising ionized germanuim dioxide, method of making and use thereof 有权
标题翻译：包含电离的二氧化锗的组合物，其制备方法和用途
公开(公告)号：US08409466B2
公开(公告)日：2013-04-02
申请号：US12880873
申请日：2010-09-13
申请人： Chang Seo Park
发明人： Chang Seo Park
IPC分类号： C09K5/00
CPC分类号： C09K5/10 , C23C30/00 , C23F11/08 , C23F11/182
摘要： A composition comprising at least one ionized silicate mineral and water, wherein the at least one ionized silicate mineral is solvated in water, and wherein decomposition comprises an ionized germanium dioxide, its method of making, and its method of using are disclosed. While the composition is subject to a wide range of applications, it is especially suited for use in a coolant system for a combustion engine, and in particular, the coolant system for an internal combustion engine for vehicles.
摘要翻译：一种包含至少一种离子化硅酸盐矿物和水的组合物，其中所述至少一种离子化硅酸盐矿物质溶解在水中，并且其中分解包括电离二氧化锗，其制备方法及其使用方法。虽然组合物受到广泛的应用，但是它特别适用于用于内燃机的冷却剂系统，特别是用于车辆的内燃机的冷却剂系统。

10. 发明授权

US06551913B1 Method for fabricating a gate electrode of a semiconductor device 失效
标题翻译：制造半导体器件的栅电极的方法
公开(公告)号：US06551913B1
公开(公告)日：2003-04-22
申请号：US09343480
申请日：1999-06-30
申请人： Hyeon Soo Kim , Chang Seo Park
发明人： Hyeon Soo Kim , Chang Seo Park
IPC分类号： H01L213205
CPC分类号： H01L29/665
摘要： The present invention relates to a semiconductor technology and more specifically to a method of fabricating a gate electrode of a semiconductor device, where a re-oxidation process that may cause an abnormal oxidation can be eliminated. In a polysilicon/silicide structure or polysilicon/metal structure of gate electrode, a step of etching side parts of gate electrode is performed without any etch mask after gate patterning. Here, the etch can be made by wet or dry etch using an etchant having high selectivity of polysilicon film to a gate oxide film, so that the damaged gate oxide part during the gate patterning is allowed not to make a role of the gate insulating film itself, thereby eliminating the re-oxidation process.
摘要翻译：本发明涉及一种半导体技术，更具体地涉及制造可能引起异常氧化的再氧化工艺的半导体器件的栅电极的制造方法。在栅极电极的多晶硅/硅化物结构或多晶硅/金属结构中，在栅极图案化之后，没有任何蚀刻掩模执行刻蚀栅极的侧面部分的步骤。这里，可以通过使用具有多晶硅膜对栅极氧化膜的高选择性的蚀刻剂的湿蚀刻或干法蚀刻来进行蚀刻，使得栅极图案化期间损坏的栅极氧化物部分不被起到栅极绝缘膜的作用本身，从而消除再氧化过程。

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