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11. 发明申请

US20100008390A1 Light-emitting device having injection-lockable unidirectional semiconductor ring laser monolithically integrated with master laser 审中-公开
标题翻译：具有可注入单向半导体环形激光器的发光器件与主激光器单片集成
公开(公告)号：US20100008390A1
公开(公告)日：2010-01-14
申请号：US12387714
申请日：2009-05-06
申请人： Marek A. Osinski , Omar K. Qassim , Nathan J. Withers , Gennady A. Smolyakov
发明人： Marek A. Osinski , Omar K. Qassim , Nathan J. Withers , Gennady A. Smolyakov
IPC分类号： H01S5/34 , H01S5/026 , H01S5/12
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/0064 , H01S5/026 , H01S5/0683 , H01S5/1025 , H01S5/1032 , H01S5/1071 , H01S5/1085 , H01S5/2213 , H01S5/227 , H01S5/34306 , H01S5/4006
摘要： A unidirectional semiconductor ring laser (USRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice.
摘要翻译：单向半导体环形激光器（USRL）部分与发光器件的半导体衬底上的DFB或DBR主激光器部分单片集成，以提供可以导致低成本超快（超过100GHz）的注入锁定模式）功能芯片，在实践中将易于使用。

12. 发明申请

US20090141764A1 Semiconductor laser and method of making the same 有权
标题翻译：半导体激光器及其制作方法
公开(公告)号：US20090141764A1
公开(公告)日：2009-06-04
申请号：US12289709
申请日：2008-10-31
申请人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
发明人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
IPC分类号： H01S5/22 , H01L21/02
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/2213 , H01S5/2214 , H01S5/222
摘要： In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.
摘要翻译：在制造半导体激光器的方法中，半导体区域在有源层上生长，并且半导体区域的一部分被蚀刻以形成脊结构。在脊结构上形成绝缘膜，形成感光材料的树脂层以埋设脊结构。通过进行树脂层的光刻曝光，在树脂层中形成固化树脂部分和未固化的树脂部分，未固化的树脂部分在脊部结构的顶部。去除未固化的树脂部分以形成设置在脊结构的顶部上的凹陷。将固化的树脂部分和凹陷的整个表面蚀刻以形成蚀刻的树脂层。通过使固化的树脂部分变薄，在蚀刻的树脂层中形成开口，并且绝缘膜的一部分暴露在蚀刻的树脂层的开口中。使用蚀刻树脂层作为掩模来蚀刻绝缘膜的一部分，以在绝缘膜中形成开口。在脊结构和蚀刻树脂层上形成电极。

13. 发明授权

US07455934B1 Fluorocopolymer material with sulfonic acid functional groups as a solid polyelectrolyte for use in fuel cells 有权
标题翻译：具有磺酸官能团的含氟共聚物材料作为用于燃料电池的固体聚电解质
公开(公告)号：US07455934B1
公开(公告)日：2008-11-25
申请号：US09700185
申请日：1999-05-10
申请人： Takayuki Araki , Noritoshi Oka , Yoshito Tanaka , Takayuki Nakamura , Tetsuo Shimizu
发明人： Takayuki Araki , Noritoshi Oka , Yoshito Tanaka , Takayuki Nakamura , Tetsuo Shimizu
IPC分类号： H01M10/08
CPC分类号： H01S5/22 , C08J5/2237 , C08J2327/12 , G02B2006/12097 , G02B2006/12176 , H01B1/122 , H01M8/0289 , H01M8/1025 , H01M8/1039 , H01M8/1067 , H01S5/0655 , H01S5/20 , H01S5/2004 , H01S5/2213 , H01S5/2218 , H01S5/2227
摘要： The invention is a material for a solid polyelectrolyte, comprising a multi-segmented fluoropolymer that comprises a block copolymer and/or a graft copolymer, wherein the copolymer contains one or more blocks essentially consisting of segment A and one or more blocks essentially consisting of segment B, the segment A combines with the segment B, wherein the segment A has a molecular weight of 5,000 to 1,000.000, and the Segment A is a copolymer chain comprising (a) an ethylenicfluoromonomer containing sulfonic acid functional groups each represented by Formula (1) CX2═CX1—(O)n—Rf—SO2Y, wherein X and X1 may be the same or different and are each hydrogen or fluorine; Y is FI, Cl, or OY1 wherein y1 is hydrogen, alkali metal or C1-C5 alkyl; Rf is C1 to C40 divalent fluoroalkylene or C1 to C40 divalent fluoroalkylene having one or more ether bonds; and n is 0 or 1; and (b) at least one type of ethylenic fluoromonomer copolymerizable with the ethylenic fluoromonomer (a) and containing no sulfonic acid functional groups, the segment B is a fluoropolymer containing no sulfonic acid functional groups, has a molecular weight of 3,000 to 1,200,000, and has a crystalline melting point of 100° C. or higher or a glass transition point of 100° C. or higher, wherein the ratio of segment A:segment B in the segmented fluoropolymer is 5:9˜to 98:2 30:70 to 90:10 wt. %.
摘要翻译：本发明是用于固体聚电解质的材料，其包含多段含氟聚合物，其包含嵌段共聚物和/或接枝共聚物，其中所述共聚物含有一个或多个基本上由片段A组成的嵌段和一个或多个基本上由片段 B，段A与段B结合，其中段A的分子量为5,000〜1,000.000，段A为共聚物链，其包含（a）含有各自由式（1）表示的磺酸官能团的烯键式氟单体， CX 2 - - - - - - - - - - - - - - - - - - - - - - - - - - - - （O） SUP> 1可以相同或不同，分别为氢或氟; Y是FI，Cl或OY 1，其中y 1是氢，碱金属或C 1 -C 5 烷基; Rf是C 1至C 40二价氟代亚烷基或C 1至C 40二价氟代亚烷基，其具有一个或多个醚债券并且n为0或1; 和（b）至少一种可与烯属含氟单体（a）共聚并且不含磺酸官能团的烯属含氟单体，段B是不含磺酸官能团的含氟聚合物，分子量为3,000至1,200,000，具有100℃以上的结晶熔点或100℃以上的玻璃化转变温度，其中分段含氟聚合物中A段：B段的比例为5:9〜98:2 30:70 至90:10重量％。

14. 发明申请

US20050111780A1 Method of reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region 有权
标题翻译：将多个输入或输出波导之间的过渡区域中的插入损耗减小到自由空间耦合器区域的方法
公开(公告)号：US20050111780A1
公开(公告)日：2005-05-26
申请号：US11018161
申请日：2004-12-21
申请人： Charles Joyner , Mark Missey , Radhakrishnan Nagarajan , Fred Kish
发明人： Charles Joyner , Mark Missey , Radhakrishnan Nagarajan , Fred Kish
IPC分类号： G02B6/34 , G02B6/42 , G02B6/12
CPC分类号： G02B6/12011 , G02B6/12016 , G02B6/12019 , G02B6/12023 , G02B6/132 , G02B6/42 , G02B2006/12097 , G02B2006/12176 , H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/1014 , H01S5/2213 , H01S5/2231 , H01S5/227 , H01S5/4031 , H01S5/4087
摘要： A method for reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region in a photonic integrated circuit (PIC) includes the steps of forming a passivation layer over the waveguides and region and forming the passivation overlayer such that it monotonically increases in thickness through the transition region to the free space coupler region.
摘要翻译：一种用于将多个输入或输出波导之间的过渡区域中的插入损耗减小到光子集成电路（PIC）中的自由空间耦合器区域的方法包括以下步骤：在波导和区域上形成钝化层并形成钝化覆盖层使得其通过过渡区域到自由空间耦合器区域的厚度单调增加。

15. 发明申请

US20050100300A1 Method for forming and apparatus comprising optical waveguides leading to a free space coupler region 有权
标题翻译：用于形成的方法和包括通向自由空间耦合器区域的光波导的设备
公开(公告)号：US20050100300A1
公开(公告)日：2005-05-12
申请号：US11018149
申请日：2004-12-21
申请人： Charles Joyner , Mark Missey , Radhakrishnan Nagarajan , Frank Peters , Mehrdad Ziari , Fred Kish
发明人： Charles Joyner , Mark Missey , Radhakrishnan Nagarajan , Frank Peters , Mehrdad Ziari , Fred Kish
IPC分类号： G02B6/34 , G02B6/42 , G02B6/10
CPC分类号： G02B6/12011 , G02B6/12016 , G02B6/12019 , G02B6/12023 , G02B6/132 , G02B6/42 , G02B2006/12097 , G02B2006/12176 , H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/1014 , H01S5/2213 , H01S5/2231 , H01S5/227 , H01S5/4031 , H01S5/4087
摘要： A method for forming and apparatus comprising a free space coupler region having a plurality of optical waveguides coupled to the space coupler region at an interface region, the waveguides converging with one another to the interface region, and a trench formed between adjacent waveguides, the depth of the trench or trenches extending from an outer point to the interface region and monotonically decreasing in depth from the outer point to the interface region.
摘要翻译：一种用于形成和装置的方法，包括具有多个光波导的自由空间耦合器区域，所述多个光波导在界面区域处耦合到所述空间耦合器区域，所述波导彼此会聚到所述界面区域，以及在相邻波导之间形成的沟槽，所述深度的沟槽或沟槽从外部点延伸到界面区域，并且从外部点到界面区域的深度单调递减。

16. 发明申请

US20040213313A1 Dopant diffusion blocking for optoelectronic devices using InAIAs or InGaAIAs 审中-公开
标题翻译：使用InAAs或InGaAAs的光电器件的掺杂扩散阻挡
公开(公告)号：US20040213313A1
公开(公告)日：2004-10-28
申请号：US10848353
申请日：2004-05-19
发明人： Yuliya A. Akulova , Sung-nee G. Chu , Michael Geva , Mark S. Hybertsen , Charles W. Lentz , Abdallah Ougazzaden
IPC分类号： H01S005/00
CPC分类号： H01S5/227 , G02F1/025 , H01S5/221 , H01S5/2213 , H01S5/2226 , H01S5/3072 , H01S5/50
摘要： A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.
摘要翻译：公开了一种用于减少有源区中的掺杂剂原子的扩散以及相邻掺杂区中不同类型的掺杂剂原子在光电子器件中的相互扩散的方法。本发明的方法采用多个InAlAs和/或InGaAlAs层以避免掺杂剂原子与有源区之间以及光电子器件的相邻阻挡结构中的掺杂剂原子之间的直接接触。还公开了抑制不同类型的掺杂剂原子的相互扩散的半绝缘掩埋隆起结构以及脊结构。

17. 发明授权

US06765944B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06765944B2
公开(公告)日：2004-07-20
申请号：US10307365
申请日：2002-12-02
申请人： Tetsuya Yagi , Yasuaki Yoshida
发明人： Tetsuya Yagi , Yasuaki Yoshida
IPC分类号： H01S522
CPC分类号： H01S5/22 , H01S5/02461 , H01S5/162 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/2227 , H01S2301/18
摘要： A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type opposite the first conductivity type, an insulating layer, and a second electrode. The second cladding layer includes at least first and second portions having thickness different from each other. The first portion is thicker than the second portion. The insulating layer is deposited on the second cladding layer but not on the first portion. The second electrode is electrically connected to the first portion. A product of a reciprocal of layer thickness and heat conductivity of the insulating layer is smaller than 4×108 W/(m2K).
摘要翻译：半导体激光器件包括堆叠结构。堆叠结构包括第一电极，第一电极上的第一导电类型的衬底，第一导电类型的第一包层，有源层，与第一导电类型相反的第二导电类型的第二包层，绝缘层和第二电极。第二包层至少包括具有彼此不同厚度的第一和第二部分。第一部分比第二部分厚。绝缘层沉积在第二覆层上，但不在第一部分上。第二电极电连接到第一部分。绝缘层的厚度和导热率的倒数的乘积小于4×10 8 W /（m 2 K）。

18. 发明授权

US06700910B1 Wavelength tunable laser and optical device 失效
标题翻译：波长可调激光器和光学器件
公开(公告)号：US06700910B1
公开(公告)日：2004-03-02
申请号：US09503740
申请日：2000-02-15
申请人： Masahiro Aoki , Shinya Sasaki , Tomonobu Tsuchiya , Hiroyuki Gomyo
发明人： Masahiro Aoki , Shinya Sasaki , Tomonobu Tsuchiya , Hiroyuki Gomyo
IPC分类号： H01S500
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/12 , H01S5/2213 , H01S5/2231 , H01S5/34326 , H01S5/34373 , H01S2301/173
摘要： In order to form a wavelength tunable laser capable of tuning a wave over a wide range by simple control means, a thin film heater is mounted either over an upper electrode of a ridge waveguide semiconductor laser having ridge waveguides on a semiconductor substrate or over the semiconductor substrate and on both sides of the ridge waveguide with a gap of a few &mgr;m. By controlling a current passed to the thin film heater, the oscillation wavelength of the semiconductor laser is tuned. In the case where the thin film heater is mounted over an upper electrode of a ridge waveguide, a nonconductor is formed on both sides of the ridge conductor to more efficiently enable heat from the heater to reach an active layer of the ridge waveguide more efficiently.
摘要翻译：为了形成能够通过简单的控制装置在宽范围内调谐波长的波长可调激光器，薄膜加热器安装在半导体衬底上或半导体衬底上的具有脊波导的脊波导半导体激光器的上电极基板和脊波导的两侧，间隙为几毫米。通过控制流过薄膜加热器的电流，调整半导体激光器的振荡波长。在薄膜加热器安装在脊波导的上电极的情况下，在脊导体的两侧形成非导体，以更有效地使来自加热器的热量更有效地到达脊波导的有源层。

19. 发明申请

US20010022885A1 RIDGE WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译： RIDGE波导型光学半导体器件及其制造方法
公开(公告)号：US20010022885A1
公开(公告)日：2001-09-20
申请号：US09222866
申请日：1998-12-30
发明人： KOJI YAMADA , KOJI NAKAMURA
IPC分类号： G02B006/13
CPC分类号： H01S5/22 , G02B2006/12097 , G02B2006/12176 , H01S5/0655 , H01S5/20 , H01S5/2004 , H01S5/2213 , H01S5/2218 , H01S5/2227
摘要： A ridge waveguide-type optical semiconductor device and a method of fabricating the same. The method of fabrication includes forming a first clad layer, a core layer, a second clad layer and a contact layer, in the stated order on a semiconductor substrate, forming a strip-shaped etching mask on the contact layer, removing the contact layer and the second clad layer selectively by etching, using the etching mask, until the core layer is exposed, so as to form a ridge including etched second clad layer, and forming a semiconductor layer by crystal growth, so as to form a mode control layer on the exposed surface of the core layer. The semiconductor device includes a semiconductor substrate, a first clad layer formed on the substrate, a core layer serving as a waveguide, on the first clad layer, and a strip-shaped second clad layer on the core layer. A mode control layer is formed on the core layer, and insulating layers are formed on the mode control layer, at opposite sides of the second clad layer. To confine light to waveguide, the mode control layer has a refractive index equal to or less than a refractive index of the core layer, and is larger than refractive indexes of the respective insulating layers.
摘要翻译：脊波导型光学半导体器件及其制造方法。制造方法包括在半导体衬底上按顺序形成第一覆盖层，芯层，第二覆盖层和接触层，在接触层上形成条状蚀刻掩模，去除接触层和通过蚀刻选择性地使用蚀刻掩模直到芯层露出，以便形成包括蚀刻的第二覆盖层的脊，并且通过晶体生长形成半导体层，以形成模式控制层核心层的暴露表面。半导体器件包括半导体衬底，在衬底上形成的第一覆盖层，用作波导的芯层，在第一覆盖层上，以及芯层上的带状第二覆盖层。在芯层上形成模式控制层，在模式控制层上，在第二覆层的相对侧形成绝缘层。为了将光限制在波导上，模式控制层具有等于或小于芯层的折射率的折射率，并且大于各绝缘层的折射率。

20. 发明授权

US5208183A Method of making a semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5208183A
公开(公告)日：1993-05-04
申请号：US771718
申请日：1991-10-04
申请人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
发明人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
IPC分类号： H01S3/00 , H01S5/00 , H01S5/125 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223
CPC分类号： H01S5/2027 , H01S2301/18 , H01S5/125 , H01S5/2213 , H01S5/2231
摘要： Disclosed is an advantageous method of making ridge-waveguide lasers. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.
摘要翻译：公开了制造脊 - 波导激光器的有利方法。该方法是不包括任何关键对准步骤的自对准方法。因此，制造具有非常窄的脊波导的激光是有用的。这样的激光器是期望的，因为它们可以抑制横向较高阶模式。

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