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1. 发明申请

US20080054277A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20080054277A1
公开(公告)日：2008-03-06
申请号：US11923751
申请日：2007-10-25
申请人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
发明人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2226 , H01S5/2231 , H01S5/34326 , H01S5/3436
摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.
摘要翻译：半导体激光器件包括有源层，p型覆层和p型覆盖层。依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。第一层远离有源层，第二层靠近有源层。在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

2. 发明授权

US07173273B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07173273B2
公开(公告)日：2007-02-06
申请号：US10700047
申请日：2003-11-04
申请人： Harumi Nishiguchi , Tetsuya Yagi , Yasuaki Yoshida
发明人： Harumi Nishiguchi , Tetsuya Yagi , Yasuaki Yoshida
IPC分类号： H01L29/06 , H01L27/15 , H01L29/22
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/2216 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.
摘要翻译：半导体激光器件具有n-GaAs衬底。在n-GaAs衬底上，依次为n-AlGaInP包覆层，AlGaInP / GaInP MQW有源层，p-AlGaInP第一覆层，单层p-Al x Ga 作为蚀刻停止层，具有条纹突起的p-AlGaInP第二包覆层和p-GaAs接触层。 p-AlGaInP第二包层的除了条状突起之外的部分被绝缘膜覆盖。 p-Al x Ga 1-x As As ESL的折射率几乎等于下，第一上和第二上部包层中的每一个的折射率层。

3. 发明授权

US06765944B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06765944B2
公开(公告)日：2004-07-20
申请号：US10307365
申请日：2002-12-02
申请人： Tetsuya Yagi , Yasuaki Yoshida
发明人： Tetsuya Yagi , Yasuaki Yoshida
IPC分类号： H01S522
CPC分类号： H01S5/22 , H01S5/02461 , H01S5/162 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/2227 , H01S2301/18
摘要： A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type opposite the first conductivity type, an insulating layer, and a second electrode. The second cladding layer includes at least first and second portions having thickness different from each other. The first portion is thicker than the second portion. The insulating layer is deposited on the second cladding layer but not on the first portion. The second electrode is electrically connected to the first portion. A product of a reciprocal of layer thickness and heat conductivity of the insulating layer is smaller than 4×108 W/(m2K).
摘要翻译：半导体激光器件包括堆叠结构。堆叠结构包括第一电极，第一电极上的第一导电类型的衬底，第一导电类型的第一包层，有源层，与第一导电类型相反的第二导电类型的第二包层，绝缘层和第二电极。第二包层至少包括具有彼此不同厚度的第一和第二部分。第一部分比第二部分厚。绝缘层沉积在第二覆层上，但不在第一部分上。第二电极电连接到第一部分。绝缘层的厚度和导热率的倒数的乘积小于4×10 8 W /（m 2 K）。

4. 发明授权

US07627010B2 Semiconductor laser having Fabry-Perot resonator 有权
标题翻译：半导体激光器具有法布里 - 珀罗谐振器
公开(公告)号：US07627010B2
公开(公告)日：2009-12-01
申请号：US11854653
申请日：2007-09-13
申请人： Tetsuya Yagi
发明人： Tetsuya Yagi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0014 , H01S5/0284 , H01S5/06804 , H01S5/34306
摘要： A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.
摘要翻译：半导体激光器具有显着的前面小面涂膜或后面涂膜的反射率，其在大于预定波长的波长处降低。该特性使得半导体激光器的损耗在大于预定波长的波长处显着增加。结果，半导体激光器在高温下的振荡波长被夹持在预定波长附近。

5. 发明申请

US20080304587A1 Ofdm Reception Device 失效
标题翻译： Ofdm接收设备
公开(公告)号：US20080304587A1
公开(公告)日：2008-12-11
申请号：US11793527
申请日：2005-12-21
申请人： Koji Setoh , Ippei Kanno , Akira Kisoda , Daisuke Hayashi , Ryosuke Mori , Tetsuya Yagi , Noritaka Iguchi
发明人： Koji Setoh , Ippei Kanno , Akira Kisoda , Daisuke Hayashi , Ryosuke Mori , Tetsuya Yagi , Noritaka Iguchi
IPC分类号： H04L27/28 , H04L27/06 , H04L25/08 , H03D1/06
CPC分类号： H04L27/2662 , H04L27/2678
摘要： An OFDM reception device detects a time at which impulse noise occurs in a received OFDM signal, and specifies a start position candidate period that does not have intersymbol interference and is estimated to have a guard interval signal in a symbol. When setting a FFT window of an effective symbol length in a symbol duration of each symbol, if the impulse noise occurrence time is included in the symbol, the OFDM reception device determines a start position of the FFT window within a range of the start position candidate period so as to exclude the impulse noise occurrence time as much as possible.
摘要翻译： OFDM接收装置检测接收的OFDM信号中出现脉冲噪声的时间，并指定不具有码间干扰的开始位置候补周期，并且估计出具有符号中的保护间隔信号。当在每个符号的符号持续时间中设置有效符号长度的FFT窗口时，如果脉冲噪声发生时间包括在符号中，则OFDM接收装置在开始位置候选的范围内确定FFT窗口的开始位置以便尽可能地排除脉冲噪声发生时间。

6. 发明授权

US06737288B2 Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06737288B2
公开(公告)日：2004-05-18
申请号：US10059415
申请日：2002-01-31
申请人： Zempei Kawazu , Tetsuya Yagi
发明人： Zempei Kawazu , Tetsuya Yagi
IPC分类号： H01L2100
CPC分类号： H01L21/30612
摘要： A heterojunction structure has an AlxGa1−xAs layer (0
摘要翻译：异质结结构具有Al x Ga 1-x As层（0

7. 发明授权

US5363399A Semiconductor distributed-feedback laser device 失效
标题翻译：半导体分布式反馈激光器件
公开(公告)号：US5363399A
公开(公告)日：1994-11-08
申请号：US978476
申请日：1992-11-18
申请人： Tetsuya Yagi
发明人： Tetsuya Yagi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/223 , H01S3/19
CPC分类号： H01S5/1228 , H01S5/223
摘要： A gain coupled distributed feedback semiconductor laser device includes regions with a predetermined period in an active layer or a cladding layer on the active layer in such a manner that a perturbation in the distribution of charge carriers injected into the active layer is produced which results in a perturbation in gain coefficient without increasing internal loss. The structure produces single-longitudinal-mode oscillation.
摘要翻译：增益耦合分布反馈半导体激光器件包括在有源层上的预定周期的区域或有源层上的覆层，从而产生注入有源层的电荷载流子分布的扰动，这导致了扰动增益系数不增加内部损失。该结构产生单纵模振荡。

8. 发明授权

US5288654A Method of making a mushroom-shaped gate electrode of semiconductor device 失效
标题翻译：制造半导体器件的蘑菇状栅电极的方法
公开(公告)号：US5288654A
公开(公告)日：1994-02-22
申请号：US14857
申请日：1993-02-08
申请人： Nobuyuki Kasai , Shinichi Sakamoto , Takuji Sonoda , Tetsuya Yagi
发明人： Nobuyuki Kasai , Shinichi Sakamoto , Takuji Sonoda , Tetsuya Yagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3213 , H01L21/338 , H01L29/423 , H01L29/47 , H01L29/812 , H01L21/265
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/32136 , H01L29/42316 , H01L29/475 , Y10S148/10
摘要： A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.
摘要翻译：蘑菇形栅电极在半导体衬底上的半导体有源层的凹部中具有下端。栅电极具有扩大的头部。金属侧壁设置在邻近头部的栅电极的腿部的一部分上。因此，诸如场效应晶体管的半导体器件的栅极长度减小，同时栅电极的有效截面面积增加，从而提高了半导体器件的噪声特性。

9. 发明授权

US5181220A Semiconductor light emitting light concentration device 失效
标题翻译：半导体发光光集中装置
公开(公告)号：US5181220A
公开(公告)日：1993-01-19
申请号：US691864
申请日：1991-04-26
申请人： Tetsuya Yagi
发明人： Tetsuya Yagi
IPC分类号： H01L33/20 , H01L33/46
CPC分类号： H01L33/20 , H01L33/46
摘要： A semiconductor light emitting light concentration device is described which has a multiple diffraction ring for collecting and concentrating the light emitted from an LED integrally formed into the electrode at the semiconductor substrate end of the light emitting device.
摘要翻译：描述了一种半导体发光聚光装置，其具有多个衍射环，用于收集并集中在发光器件的半导体衬底端处一体形成为电极的LED的发射光。

10. 发明授权

US08265764B2 Artificial vision system 有权
标题翻译：人工视觉系统
公开(公告)号：US08265764B2
公开(公告)日：2012-09-11
申请号：US10537266
申请日：2003-12-04
申请人： Yasuo Tano , Takashi Fujikado , Yutaka Fukuda , Tetsuya Yagi
发明人： Yasuo Tano , Takashi Fujikado , Yutaka Fukuda , Tetsuya Yagi
IPC分类号： A61N1/00 , A61B5/04
CPC分类号： A61N1/36046 , A61F9/08 , A61N1/0543 , A61N1/37229 , A61N1/3727
摘要： An object is to provide an artificial vision system ensuring a wide field of view without damaging a retina. In the artificial vision system, a plurality of electrodes (23) are to be implanted so as to stick in an optic papilla of an eye of a patient. A signal for stimulation pulse is generated based on an image captured by an image pick up device (11) to be disposed outside a body of the patient. The electrical stimulation signals outputted from the electrodes (23) based on the signals for stimulation pulse stimulate an optic nerve of the eye, thereby enabling the patient to visually recognize the image from the image pickup device (11).
摘要翻译：目的是提供一种人造视觉系统，确保广泛的视野，而不损害视网膜。在人造视觉系统中，要植入多个电极（23）以便粘贴在患者眼睛的视神经乳头中。基于由图像拾取装置（11）捕获的图像来生成用于刺激脉冲的信号，以设置在患者身体外部。基于用于刺激脉冲的信号从电极（23）输出的电刺激信号刺激眼睛的视神经，从而使得患者能够从图像拾取装置（11）可视地识别图像。

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