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1. 发明申请

US20090141764A1 Semiconductor laser and method of making the same 有权
标题翻译：半导体激光器及其制作方法
公开(公告)号：US20090141764A1
公开(公告)日：2009-06-04
申请号：US12289709
申请日：2008-10-31
申请人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
发明人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
IPC分类号： H01S5/22 , H01L21/02
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/2213 , H01S5/2214 , H01S5/222
摘要： In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.
摘要翻译：在制造半导体激光器的方法中，半导体区域在有源层上生长，并且半导体区域的一部分被蚀刻以形成脊结构。在脊结构上形成绝缘膜，形成感光材料的树脂层以埋设脊结构。通过进行树脂层的光刻曝光，在树脂层中形成固化树脂部分和未固化的树脂部分，未固化的树脂部分在脊部结构的顶部。去除未固化的树脂部分以形成设置在脊结构的顶部上的凹陷。将固化的树脂部分和凹陷的整个表面蚀刻以形成蚀刻的树脂层。通过使固化的树脂部分变薄，在蚀刻的树脂层中形成开口，并且绝缘膜的一部分暴露在蚀刻的树脂层的开口中。使用蚀刻树脂层作为掩模来蚀刻绝缘膜的一部分，以在绝缘膜中形成开口。在脊结构和蚀刻树脂层上形成电极。

2. 发明授权

US07947520B2 Semiconductor laser and method of making the same 有权
标题翻译：半导体激光器及其制作方法
公开(公告)号：US07947520B2
公开(公告)日：2011-05-24
申请号：US12289709
申请日：2008-10-31
申请人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
发明人： Hideki Yagi , Toshio Nomaguchi , Kenji Hiratsuka
IPC分类号： H01L21/02
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/2213 , H01S5/2214 , H01S5/222
摘要： In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.
摘要翻译：在制造半导体激光器的方法中，半导体区域在有源层上生长，并且半导体区域的一部分被蚀刻以形成脊结构。在脊结构上形成绝缘膜，形成感光材料的树脂层以埋设脊结构。通过进行树脂层的光刻曝光，在树脂层中形成固化树脂部分和未固化的树脂部分，未固化的树脂部分在脊部结构的顶部。去除未固化的树脂部分以形成设置在脊结构的顶部上的凹陷。将固化的树脂部分和凹陷的整个表面蚀刻以形成蚀刻的树脂层。通过使固化的树脂部分变薄，在蚀刻的树脂层中形成开口，并且绝缘膜的一部分暴露在蚀刻的树脂层的开口中。使用蚀刻树脂层作为掩模来蚀刻绝缘膜的一部分，以在绝缘膜中形成开口。在脊结构和蚀刻树脂层上形成电极。

3. 发明授权

US07736926B2 Method for manufacturing a light-emitting device with a periodic structure in an active region 失效
标题翻译：在活性区域中制造具有周期性结构的发光装置的方法
公开(公告)号：US07736926B2
公开(公告)日：2010-06-15
申请号：US11790486
申请日：2007-04-25
申请人： Hideki Yagi
发明人： Hideki Yagi
IPC分类号： H01L21/00
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/2275 , H01S5/341 , H01S5/3412
摘要： The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
摘要翻译：本发明提供了一种发光器件，其中其有源区域可以避免被等离子体工艺损坏。该器件首先在半导体衬底上形成半导体层，接下来设置有蚀刻掩模。使用掩模，将衬底上的半导体层干蚀刻以形成具有凹槽和台面的周期性结构。通过OMVPE方法将有源区域埋入槽内。

4. 发明授权

US07496125B2 Composite laser rod, fabricating method thereof, and laser device therewith 有权
标题翻译：复合激光棒及其制造方法及激光装置
公开(公告)号：US07496125B2
公开(公告)日：2009-02-24
申请号：US11561301
申请日：2006-11-17
申请人： Hikaru Kouta , Yoshikazu Suzuki , Shuetsu Kudo , Masaki Tsunekane , Katsuji Mukaihara , Takagimi Yanagitani , Hideki Yagi
发明人： Hikaru Kouta , Yoshikazu Suzuki , Shuetsu Kudo , Masaki Tsunekane , Katsuji Mukaihara , Takagimi Yanagitani , Hideki Yagi
IPC分类号： H01S3/14 , H01S3/07
CPC分类号： H01S3/061 , H01S3/025 , H01S3/0407 , H01S3/042 , H01S3/0612 , H01S3/08095 , H01S3/0941 , H01S3/09415
摘要： As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed. When the refractive index of the laser rod is made higher than that of the ceramic pipe, a high efficiency oscillation can be realized, and furthermore when the thermal conductivity of the ceramic pipe is made higher than that of the laser rod, the thermal lens effect can be alleviated.
摘要翻译：作为能够满足激光的位置稳定性和输出稳定性的复合激光棒，将激光激光元件掺杂的激光棒紧密地插入到具有晶体结构的非掺杂陶瓷管的中空部分与激光棒相同，随后烘烤，以便在烘烤之后除去激光棒和陶瓷管之间的界面处的间隙和应变，然后对陶瓷管的表面进行抛光以形成陶瓷表皮层，由此形成复合激光棒。在复合激光棒中，由于冷却水或散热器的冷却能力的波动引起的影响由非掺杂表层平均化，激光棒的温度波动被抑制，来自冷却水的振动的影响或者可以抑制冷却风扇。当激光棒的折射率高于陶瓷管的折射率时，可以实现高效率的振荡，此外，当陶瓷管的导热率高于激光棒的热导率时，热透镜效应可以缓解。

5. 发明申请

US20080025895A1 Translucent Lutetium Oxide Sinter, And Method For Manufacturing Same 有权
标题翻译：半透明氧化镥烧结剂及其制造方法相同
公开(公告)号：US20080025895A1
公开(公告)日：2008-01-31
申请号：US11630528
申请日：2004-09-28
申请人： Shunsuke Hosokawa , Hideki Yagi , Takagimi Yanagitani
发明人： Shunsuke Hosokawa , Hideki Yagi , Takagimi Yanagitani
IPC分类号： C01F17/00
CPC分类号： C04B35/50 , C04B35/62655 , C04B35/6303 , C04B35/64 , C04B35/6455 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3286 , C04B2235/444 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/602 , C04B2235/604 , C04B2235/656 , C04B2235/6581 , C04B2235/6582 , C04B2235/661 , C04B2235/72 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/87 , C04B2235/9653 , H01J61/302
摘要： The present invention provides a lutetium oxide sinter to which yttrium is added in an amount of 100 mass ppm to 7000 mass ppm, whose average particle size is from 0.7 to 20 μm, and with which there is no precipitation of a hetero phase containing yttrium at the grain boundary.
摘要翻译：本发明提供一种镥氧化物烧结体，其中添加钇的量为100质量ppm至7000质量ppm，其平均粒度为0.7至20μm，并且不存在含钇异相的沉淀晶界。

6. 发明申请

US20070253456A1 Method for manufacturing a light-emitting device with a periodic structure in an active region 失效
标题翻译：在活性区域中制造具有周期性结构的发光装置的方法
公开(公告)号：US20070253456A1
公开(公告)日：2007-11-01
申请号：US11790486
申请日：2007-04-25
申请人： Hideki Yagi
发明人： Hideki Yagi
IPC分类号： H01S5/00 , H01S3/06 , H01S3/14
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/2275 , H01S5/341 , H01S5/3412
摘要： The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
摘要翻译：本发明提供了一种发光器件，其中其有源区域可以避免被等离子体工艺损坏。该器件首先在半导体衬底上形成半导体层，接下来设置有蚀刻掩模。使用掩模，将衬底上的半导体层干蚀刻以形成具有凹槽和台面的周期性结构。通过OMVPE方法将有源区域埋入槽内。

7. 发明申请

US20050065140A1 Serotonine reuptake inhibitor 审中-公开
标题翻译： 5-羟色胺再摄取抑制剂
公开(公告)号：US20050065140A1
公开(公告)日：2005-03-24
申请号：US10498482
申请日：2002-12-12
申请人： Toru Kodo , Hideki Yagi , Akihito Dan , Shuji Masumoto , Naoya Kinomura , Koji Koyama
发明人： Toru Kodo , Hideki Yagi , Akihito Dan , Shuji Masumoto , Naoya Kinomura , Koji Koyama
IPC分类号： A61K31/445 , A61K31/4545 , A61K31/4709 , A61K31/5355 , A61P1/00 , A61P3/04 , A61P5/00 , A61P9/12 , A61P15/00 , A61P25/06 , A61P25/16 , A61P25/22 , A61P25/24 , A61P25/28 , A61P25/30 , A61P25/32 , A61P25/34 , A61P43/00 , C07D211/18 , C07D211/22 , C07D211/24 , C07D211/26 , C07D211/34 , C07D401/06 , C07D413/06 , C07D417/06 , A61K31/454 , A61K31/40 , A61K31/4025
CPC分类号： C07D401/06 , A61K31/445 , A61K31/4545 , A61K31/4709 , A61K31/5355 , C07D211/18 , C07D211/22 , C07D211/24 , C07D211/26 , C07D211/34 , C07D413/06 , C07D417/06
摘要： There is provided a selective serotonin reuptake inhibitor having affinity for serotonin 1A receptors which comprises a cyclic amine represented by the formula: wherein G represents a formula (2): a prodrug of said cyclic amine, or a pharmaceutically acceptable salt of said cyclic amine or prodrug, as an active ingredient.
摘要翻译：提供了对5-羟色胺1A受体具有亲和力的选择性5-羟色胺再摄取抑制剂，其包含由下式表示的环胺：其中G表示式（2）：所述环胺的前药或所述环胺的药学上可接受的盐或前药，作为活性成分。

8. 发明授权

US5843957A Naphthyridine derivatives 失效
标题翻译：萘啶衍生物
公开(公告)号：US5843957A
公开(公告)日：1998-12-01
申请号：US978146
申请日：1997-11-25
申请人： Masami Muraoka , Katsuhisa Ioriya , Naohito Ohashi , Hideki Yagi
发明人： Masami Muraoka , Katsuhisa Ioriya , Naohito Ohashi , Hideki Yagi
IPC分类号： A61K31/435 , C07D471/04
CPC分类号： A61K31/435 , C07D471/04
摘要： Naphthyridine derivative of the formula: ##STR1## wherein Ring A is substituted or unsubstituted pyridine, X is --N(R.sup.2)--CO--(R.sup.2 is H, alkyl, substituted alkyl, etc.), Z is a direct bond, --NH--, C.sub.1 -C.sub.2 alkylene, or --CH.dbd.CH--, Y is alkyl, substituted alkyl, aromatic group or substituted aromatic group, etc., B is alkyl, substituted alkyl, aromatic group or substituted aromatic group, or an acid addition salt thereof, these compounds having acyl-CoA: cholesterol acyl transferase inhibitory activity, and being useful as an agent for prophylaxis or treatment of hyperlipidemia, atherosclerosis, and related diseases thereof.
摘要翻译：下式的萘啶衍生物：其中环A是取代或未取代的吡啶，X是-N（R 2）-CO-（R 2是H，烷基，取代的烷基等），Z是直接键，-NH-，C 1 -C 2亚烷基或-CH = CH-，Y是烷基，取代的烷基，芳族基团或取代的芳族基团等，B是烷基，取代的烷基，芳族基团或取代的芳族基团，或这些化合物具有酰基-CoA：胆固醇酰基转移酶抑制活性，可用作预防或治疗高脂血症，动脉粥样硬化及其相关疾病的药剂。

9. 发明授权

US5720731A Prefilled syringe for injection of two liquids 失效
标题翻译：用于注射两种液体的预充注射器
公开(公告)号：US5720731A
公开(公告)日：1998-02-24
申请号：US630989
申请日：1996-04-12
申请人： Masafumi Aramata , Hitoshi Futagawa , Hideki Yagi
发明人： Masafumi Aramata , Hitoshi Futagawa , Hideki Yagi
IPC分类号： A61M5/24 , A61M5/28 , A61M5/31 , A61M5/315 , A61M5/00
CPC分类号： A61M5/284 , A61M2005/3132
摘要： Prefilled syringe for injection of two liquids includes a syringe body with an injection port at a closed end thereof, first and second gaskets fluid-tightly fitted into the syringe body to separate two medical solutions filled therein, and a closing member for closing the injection port. The syringe body is provided with bypassing grooves extending in the longitudinal direction of the syringe from a position adjacent to the closed end thereof. Liquid communication means is provided between the closed end and the first gasket. By pushing a plunger, the first and second gaskets are forced to move forward so that two medical solutions are injected one after another.
摘要翻译：用于注射两种液体的预充注注射器包括在其封闭端具有注射口的注射器主体，流体密封地装配到注射器体中的第一和第二垫圈以分离填充在其中的两种医用溶液，以及用于封闭注射口的封闭构件。注射器主体设置有从邻近其封闭端的位置沿着注射器的纵向方向延伸的旁路槽。液体连通装置设置在封闭端和第一垫圈之间。通过推动柱塞，第一和第二垫圈被迫向前移动，使得两个医疗溶液一个接一个地注入。

10. 发明授权

US08811830B2 Multi-channel optical waveguide receiver 有权
标题翻译：多通道光波导接收机
公开(公告)号：US08811830B2
公开(公告)日：2014-08-19
申请号：US13609591
申请日：2012-09-11
申请人： Yoshihiro Yoneda , Hideki Yagi , Naoko Inoue
发明人： Yoshihiro Yoneda , Hideki Yagi , Naoko Inoue
IPC分类号： H04B10/00 , H04B10/06
CPC分类号： G02B6/12004 , G02B6/4279 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： A multi-channel optical waveguide receiver includes an optical input port; an optical branching unit; light-receiving elements having bias electrodes and signal electrodes; optical waveguides being optically coupled between the optical branching unit and the light-receiving elements; capacitors electrically connected between the bias electrodes and a reference potential, the capacitors and the bias electrodes being connected through interconnection patterns; and a signal amplifier including input electrodes. The optical branching unit, the light-receiving elements, the optical waveguides, and the capacitors are formed on a single substrate, the substrate having an edge extending in a first direction. The signal amplifier and the substrate are arranged in a second direction crossing the first direction. The input electrodes and the signal electrodes are arranged along the edge of the substrate. Each of the signal electrodes of the light-receiving elements is electrically connected through a bonding wire to the input electrode.
摘要翻译：多通道光波导接收机包括光输入端口; 光分支单元; 具有偏置电极和信号电极的光接收元件; 光学波导光耦合在光学分支单元和光接收元件之间; 电连接在偏置电极和参考电位之间的电容器，电容器和偏置电极通过互连图形连接; 以及包括输入电极的信号放大器。光分路单元，光接收元件，光波导和电容器形成在单个基板上，该基板具有沿第一方向延伸的边缘。信号放大器和衬底沿与第一方向交叉的第二方向布置。输入电极和信号电极沿着基板的边缘布置。光接收元件的每个信号电极通过接合线电连接到输入电极。

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