专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5213995A Method of making an article comprising a periodic heteroepitaxial semiconductor structure 失效
标题翻译：制造包含周期性异质外延半导体结构的制品的方法
公开(公告)号：US5213995A
公开(公告)日：1993-05-25
申请号：US869980
申请日：1992-04-16
申请人： Young-Kai Chen , Minghwei Hong , Joseph P. Mannaerts , Ming-Chiang Wu
发明人： Young-Kai Chen , Minghwei Hong , Joseph P. Mannaerts , Ming-Chiang Wu
IPC分类号： H01L21/203 , H01L21/20 , H01L33/00 , H01L33/06 , H01S5/00 , H01S5/20 , H01S5/323 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0245 , H01L21/02463 , H01L21/02507 , H01L21/02532 , H01L21/02546 , H01L33/0062 , H01S5/20 , H01S5/2004 , H01S5/32316 , H01S5/3432 , Y10S438/925
摘要： A novel method of making articles that comprise a periodic heteroepitaxial semiconductor structure is disclosed. The method pertains to growth of the periodic structure by MBE, CVD or similar growth techniques, and involves periodically changing the substrate temperature. For instance, a periodic multilayer GaAs/AlGaAs is grown by MBE, with the substrate temperature cycled between 600.degree. C. and 700.degree. C. The novel method can produce multilayer structures of uniformly high material quality.

2. 发明授权

US5088099A Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence 失效
标题翻译：包括适于发射具有低横向发散度的单模辐射的激光器的装置
公开(公告)号：US5088099A
公开(公告)日：1992-02-11
申请号：US631292
申请日：1990-12-20
申请人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
发明人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
IPC分类号： H01S5/00 , H01S3/00 , H01S5/06 , H01S5/12 , H01S5/125 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/34
CPC分类号： H01S5/2027 , H01S2301/18 , H01S5/125 , H01S5/2213 , H01S5/2231
摘要： Disclosed is an edge-emitting semiconductor laser that has a single waveguiding structure, and that comprises means for reducing the transverse divergence of the far-field pattern of the laser emission. Typically these means comprise reflecting means (preferably transverse distributed Bragg reflectors) disposed parallel to the junction plane of the laser. Lasers according to the invention can have a highly stable single mode output having a substantially symmetrical far field pattern. Disclosed is also an advantageous method of making ridge-waveguide lasers that can, inter alia, be used to make lasers according to the invention. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.

3. 发明授权

US5208183A Method of making a semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5208183A
公开(公告)日：1993-05-04
申请号：US771718
申请日：1991-10-04
申请人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
发明人： Young-Kai Chen , Minghwei Hong , Ming-Chiang Wu
IPC分类号： H01S3/00 , H01S5/00 , H01S5/125 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223
CPC分类号： H01S5/2027 , H01S2301/18 , H01S5/125 , H01S5/2213 , H01S5/2231
摘要： Disclosed is an advantageous method of making ridge-waveguide lasers. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.
摘要翻译：公开了制造脊 - 波导激光器的有利方法。该方法是不包括任何关键对准步骤的自对准方法。因此，制造具有非常窄的脊波导的激光是有用的。这样的激光器是期望的，因为它们可以抑制横向较高阶模式。

4. 发明授权

US06271069B1 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
标题翻译：在GaAs基半导体本体上制造包含氧化物层的制品的方法
公开(公告)号：US06271069B1
公开(公告)日：2001-08-07
申请号：US09122558
申请日：1998-07-24
申请人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
发明人： Young-Kai Chen , Alfred Yi Cho , William Scott Hobson , Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Donald Winslow Murphy , Fan Ren
IPC分类号： H01L2976
CPC分类号： H01L29/517 , C23C14/08 , H01L21/28158 , H01L21/28264 , H01L21/8252 , H01L27/0605 , H01L29/66522 , H01L29/78 , H01L33/44 , H01S5/028
摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.
摘要翻译：公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1）。该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

5. 发明授权

US5212701A Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译：具有增强的光学限制的半导体表面发射激光器
公开(公告)号：US5212701A
公开(公告)日：1993-05-18
申请号：US857350
申请日：1992-03-25
申请人： Kent D. Choquette , Robert S. Freund , Minghwei Hong
发明人： Kent D. Choquette , Robert S. Freund , Minghwei Hong
IPC分类号： H01L33/00 , H01S5/00 , H01S5/183
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222
摘要： The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.

6. 发明授权

US5912498A Article comprising an oxide layer on GAN 失效
标题翻译：文章包括GAN上的氧化物层
公开(公告)号：US5912498A
公开(公告)日：1999-06-15
申请号：US948874
申请日：1997-10-10
申请人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
发明人： William Scott Hobson , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
IPC分类号： H01L29/78 , H01L21/20 , H01L21/28 , H01L21/316 , H01L29/51 , H01L29/786 , H01L29/76
CPC分类号： H01L29/517 , H01L21/28264 , H01L21/31604
摘要： A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.
摘要翻译：通过涉及制备GaN的方法，GaN表面上形成高质量的氧化物层，使得表面基本上是原子上清洁的并且基本上是原子排列的，并且进一步包括将表面从GGG（镓钆石榴石）蒸发源。包括GaN /氧化物组合的MOS结构显示出低的漏电流以及电荷累积和耗尽。

7. 发明授权

US5903037A GaAs-based MOSFET, and method of making same 失效
标题翻译：基于GaAs的MOSFET及其制造方法
公开(公告)号：US5903037A
公开(公告)日：1999-05-11
申请号：US804782
申请日：1997-02-24
申请人： Alfred Yi Cho , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
发明人： Alfred Yi Cho , Minghwei Hong , James Robert Lothian , Joseph Petrus Mannaerts , Fan Ren
IPC分类号： H01L29/78 , B82B1/00 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/51 , H01L21/316 , H01L23/58
CPC分类号： H01L29/517 , H01L21/28158 , H01L21/28264 , H01L29/66522 , H01L2924/0002
摘要： It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO.sub.2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H.sub.2 O.
摘要翻译：已经发现，如果该层是Gd:Ga原子比大于约1:7.5，优选大于1:4的Ga-Gd氧化物，则在HF溶液中基本上不蚀刻含Ga氧化物层，或甚至1：2。这有助于在欧姆接触退火之后去除保护性电介质（通常为SiO 2）层，其中Ga-Gd氧化物栅极氧化物层用作蚀刻停止，并且不受与HF蚀刻剂的接触的不利影响。 Gd-Ge-氧化物还表现出在HCl：H 2 O中的组成依赖性蚀刻速率。

8. 发明授权

US06404027B1 High dielectric constant gate oxides for silicon-based devices 有权
标题翻译：用于硅基器件的高介电常数栅极氧化物
公开(公告)号：US06404027B1
公开(公告)日：2002-06-11
申请号：US09499411
申请日：2000-02-07
申请人： Minghwei Hong , Ahmet Refik Kortan , Jueinai Raynien Kwo , Joseph Petrus Mannaerts
发明人： Minghwei Hong , Ahmet Refik Kortan , Jueinai Raynien Kwo , Joseph Petrus Mannaerts
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/02192 , H01L21/02293 , H01L21/28194 , H01L21/28238 , H01L21/31604 , H01L29/045 , H01L29/517
摘要： A high dielectric rare earth oxide of the form Mn2O3 (such as, for example, Gd2O3 or Y2O3) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10−7 torr to form an acceptable gate oxide (in terms of dielectric constant (∈˜18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO2 dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.
摘要翻译：在氧分压小于或等于10 -7乇的条件下，在干净的硅（100）衬底表面上生长Mn2O3（例如，Gd 2 O 3或Y 2 O 3）形式的高电介质稀土氧化物以形成可接受的栅极氧化物（以介电常数（ε〜18）和厚度计），其消除了超薄常规SiO 2电介质中存在的隧道电流，并避免在硅衬底和电介质之间的界面处形成自然氧化物层。外延膜可以在邻硅衬底上和在常规硅衬底上的非晶膜上生长以形成高电介质栅极氧化物。

9. 发明授权

US5275687A Process for removing surface contaminants from III-V semiconductors 失效
标题翻译：从III-V半导体去除表面污染物的工艺
公开(公告)号：US5275687A
公开(公告)日：1994-01-04
申请号：US979119
申请日：1992-11-20
申请人： Kent D. Choquette , Robert S. Freund , Minghwei Hong , Joseph P. Mannaerts
发明人： Kent D. Choquette , Robert S. Freund , Minghwei Hong , Joseph P. Mannaerts
IPC分类号： H01L21/203 , C30B33/00 , H01L21/302 , H01L21/306 , H01L21/3065 , C30B23/02
CPC分类号： H01L21/02046 , C30B29/42 , C30B33/00 , Y10S148/017
摘要： In accordance with the invention, a contaminated III-V semiconductor surface is cleaned by the sequential steps of exposure to hydrogen plasma, chemical etching in chlorine and annealing in vacuum. In a preferred embodiment, a semiconductor of the gallium arsenide family is subjected to hydrogen plasma in an ECR system for 20-120 minutes, then, without breaking vacuum, subjected to a Cl.sub.2 chemical etch at 250.degree. C.-450.degree. C. for 1-5 minutes. Again, without breaking vacuum, the semiconductor is annealed at 200.degree. C.-600.degree. C. for 5-15 minutes. To obtain good surface reconstruction, annealing preferably takes place at a temperature 300.degree. C. or above. The semiconductor surface thus processed is atomically smooth and sufficiently clean to permit regrowth of a high quality epitaxial layer.
摘要翻译：根据本发明，通过暴露于氢等离子体，氯中的化学蚀刻和真空退火的顺序步骤清洁污染的III-V半导体表面。在优选的实施方案中，将砷化镓族的半导体在ECR系统中经历20-120分钟的氢等离子体，然后在不破坏真空的情况下，在250℃-450℃下进行Cl 2化学蚀刻，以获得 1-5分钟。再次，在不破坏真空的情况下，半导体在200摄氏度-600摄氏度退火5-15分钟。为了获得良好的表面重构，退火优选在300℃或更高的温度下进行。如此处理的半导体表面是原子平滑的并且足够清洁以允许高质量外延层的再生长。

10. 发明授权

US06495407B1 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 有权
标题翻译：在GaAs基半导体本体上制造包含氧化物层的制品的方法
公开(公告)号：US06495407B1
公开(公告)日：2002-12-17
申请号：US09156719
申请日：1998-09-18
申请人： Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Yu-Chi Wang
发明人： Minghwei Hong , Jenn-Ming Kuo , Jueinai Raynien Kwo , Joseph Petrus Mannaerts , Yu-Chi Wang
IPC分类号： H02L218238
CPC分类号： H01L29/66522 , H01L21/2654 , H01L21/26553 , H01L21/28264 , H01L21/7605 , H01L29/78
摘要： A novel method of forming a GaAs-based MOS structure comprises ion implantation after oxide formation, and subsequent slow heating and cooling, carried out such that essentially no interfacial defects that are detectable by high resolution transmission electron microscopy are formed. If the MOS structure is a MOS-FET then metal contacts are provided in conventional fashion. A post-metallization anneal can result in FETs that are substantially free of drain current/voltage hysteresis. MOS-FETs made according to the novel method can be produced with high yield and can have significantly increased lifetime, as compared to some prior art GaAs-based MOS-FETs.
摘要翻译：形成GaAs基MOS结构的新方法包括在形成氧化物之后的离子注入，然后进行缓慢的加热和冷却，使得基本上不形成可通过高分辨率透射电子显微镜检测的界面缺陷。如果MOS结构是MOS-FET，则以常规方式提供金属触点。后金属化退火可导致基本上没有漏极电流/电压滞后的FET。与一些现有技术的GaAs基MOS-FET相比，可以以高产率制造出根据新颖方法制造的MOS-FET，并且可以显着增加寿命。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式