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11. 发明授权

US07601652B2 Method for treating substrates and films with photoexcitation 有权
标题翻译：用光激发处理底物和膜的方法
公开(公告)号：US07601652B2
公开(公告)日：2009-10-13
申请号：US11157567
申请日：2005-06-21
申请人： Kaushal K. Singh , Sean M. Seutter , Jacob Smith , R. Suryanarayanan Iyer , Steve G. Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
发明人： Kaushal K. Singh , Sean M. Seutter , Jacob Smith , R. Suryanarayanan Iyer , Steve G. Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , H01L21/0228 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
摘要翻译：本发明的实施方案通常提供使用光激发沉积膜的方法。光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

12. 发明申请

US20060286820A1 Method for treating substrates and films with photoexcitation 有权
公开(公告)号：US20060286820A1
公开(公告)日：2006-12-21
申请号：US11157567
申请日：2005-06-21
申请人： Kaushal Singh , Sean Seutter , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
发明人： Kaushal Singh , Sean Seutter , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , H01L21/0228 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

13. 发明授权

US06520189B1 CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US06520189B1
公开(公告)日：2003-02-18
申请号：US09398059
申请日：1999-09-17
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： B08B312
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

14. 发明申请

US20020014203A1 View port of a chemical vapor deposition device for manufacturing semiconductor devices 有权
公开(公告)号：US20020014203A1
公开(公告)日：2002-02-07
申请号：US09800894
申请日：2001-03-08
发明人： Tae-Hoon Kim , Byung-Chul Kim , Kwon Son , Bong-Soon Lim
IPC分类号： C23C016/00
CPC分类号： B01J3/004 , C23C16/488 , G02B7/007
摘要： A view port of chemical vapor deposition apparatus for manufacturing semiconductor devices prevents heat loss in a chamber during a plasma deposition process. The view port includes a bracket protruding at the circumference of an opening in an electrode serving as a wall of a chamber of the apparatus, a transparent window pressed by the bracket against the wall via an O-ring, a pivoting cap for capping an opening in the bracket aligned with the window, and heat-insulative material and/or a heating element integral with the cap so as to be positioned close to the window when the cap is closed. The heating element can be a resistive heating wire or a warm air duct formed by a hose or the like. During the deposition process, the temperature of the window is maintained, thereby minimizing the tendency of polymer to adhere to the window.

15. 发明授权

US5288684A Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction 失效
标题翻译：光化学汽相反应装置及引起光化学气相反应的方法
公开(公告)号：US5288684A
公开(公告)日：1994-02-22
申请号：US673812
申请日：1991-03-22
申请人： Shunpei Yamazaki , Shinji Imatoh , Shigenori Hayashi
发明人： Shunpei Yamazaki , Shinji Imatoh , Shigenori Hayashi
IPC分类号： C23C16/48 , H01L21/205 , H01L21/3213 , H01L21/336 , H01L21/00
CPC分类号： H01L29/66757 , C23C16/482 , C23C16/488 , H01L21/32137
摘要： A photochemical vapor phase reaction apparatus and a method of causing a photochemical vapor phase reaction are described. The apparatus comprises a vacuum chamber, a substrate holder provided in the vacuum chamber for holding a substrate to be treated by a vapor phase reaction, a gas feeding system for supplying a reactive gas to the reaction space, a light source housed in a light source room for emitting light rays through a light window, an optical system for condensing and projecting the light rays emitted from the light source onto the substrate on the holder. By this configuration, the intensity of light is relatively low at the light window and relatively high at the surface of a substrate to be treated.
摘要翻译：描述了光化学气相反应装置和引起光化学气相反应的方法。该设备包括真空室，设置在真空室中用于保持待气相反应的基板的基板保持器，用于向反应空间供应反应性气体的气体供给系统，容纳在光源中的光源用于通过光窗口发射光线的空间，用于将从光源发射的光线会聚并投影到保持器上的基板上的光学系统。通过这种构造，光的强度相对较低，并且在待处理的基板的表面上相对较高。

16. 发明授权

US5005519A Reaction chamber having non-clouded window 失效
标题翻译：反应室具有非云状窗口
公开(公告)号：US5005519A
公开(公告)日：1991-04-09
申请号：US492454
申请日：1990-03-14
申请人： John C. Egermeier , Janet Ellzey , Delroy Walker
发明人： John C. Egermeier , Janet Ellzey , Delroy Walker
IPC分类号： C23C16/48
CPC分类号： C23C16/488 , C23C16/482
摘要： A reaction chamber for performing a chemical vapor deposition process wherein the window through which the light must pass is prevented from becoming clouded. The chamber is divided by baffles into a reactant zone, a buffer zone, and a window zone, and the momentum flux densities of the gases flowing in the respective zones are about matched. Additionally, discontinuities are provided on the walls of the reactor to impede diffusion of the reactant gas towards the window.
摘要翻译：用于执行化学气相沉积工艺的反应室，其中防止光必须通过的窗口变得混浊。该室由挡板分成反应物区域，缓冲区域和窗口区域，并且在各个区域中流动的气体的动量通量密度近似匹配。此外，在反应器的壁上提供不连续性以阻止反应气体向窗口的扩散。

17. 发明授权

US4960071A Thin film forming apparatus 失效
标题翻译：薄膜成型装置
公开(公告)号：US4960071A
公开(公告)日：1990-10-02
申请号：US250745
申请日：1988-09-29
申请人： Takashi Akahori , Satoshi Nakayama
发明人： Takashi Akahori , Satoshi Nakayama
IPC分类号： C23C16/48 , C23C16/54
CPC分类号： C23C16/54 , C23C16/488
摘要： The present invention relates to an apparatus to form a thin film on a specimen in a chamber by introducing electromagnetic waves into the chamber through a dielectric provided on a window of the chamber and activating the material gas in the chamber, and the forming apparatus according to the present invention has such a construction that an electrode connected to a high-frequency generating source is mounted near the dielectric. Consequently, when a high frequency is applied to the electrode, self-biases are generated on the inner surface of the dielectric (the surface on the side of the specimen), the plus ions in the chamber being attracted to the inner surface to strike thereon, and the sputtering being caused on the inner surface by the incidence energy. As a result, due to the sputtering effect, the generation of a pile of films on the inner surface of the dielectric can be prevented, while in the case where films are already piled on the inner surface of the dielectric these films can be removed.

18. 发明授权

US4887548A Thin film manufacturing system 失效
标题翻译：薄膜制造系统
公开(公告)号：US4887548A
公开(公告)日：1989-12-19
申请号：US193680
申请日：1988-05-13
申请人： Kazuo Urata , Naoki Hirose , Shigenori Hayashi
发明人： Kazuo Urata , Naoki Hirose , Shigenori Hayashi
IPC分类号： H01L21/31 , C23C16/34 , C23C16/48 , H01L21/205
CPC分类号： C23C16/488
摘要： A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.
摘要翻译：薄膜制造系统包括具有对紫外线辐射透明的窗口的反应容器; 将气体从反应容器排出到减压状态的方法，将气体引入反应容器中以形成薄膜，激活气体的紫外线辐射源，以及以预定间隔设置的狭缝的方法对紫外线辐射透明的窗户。

19. 发明授权

US4637938A Methods of using selective optical excitation in deposition processes and the detection of new compositions 失效
标题翻译：在沉积过程中使用选择性光学激发的方法和新组合物的检测
公开(公告)号：US4637938A
公开(公告)日：1987-01-20
申请号：US524923
申请日：1983-08-19
申请人： Henry Lee , John P. deNeufville , Stanford R. Ovshinsky
发明人： Henry Lee , John P. deNeufville , Stanford R. Ovshinsky
IPC分类号： B01J12/00 , B01J19/12 , B01J19/14 , C01B33/107 , C01G17/04 , C23C16/24 , C23C16/48 , C23C16/52 , G01N21/64 , G03G5/08 , G03G5/082 , B05D3/06 , B05D5/12
CPC分类号： C23C16/52 , B01J12/002 , B01J19/121 , C01B33/107 , C01G17/04 , C23C16/24 , C23C16/483 , C23C16/488 , G01N21/6402
摘要： The present invention generally relates to the use of fluorescence signals obtained by selective optical excitation to detect and monitor a species present during a flow reaction or decomposition of various reactants. These reactions were analyzed in situ using a tunable laser as a selective excitation source in combination with a reactor inducing such reactions with a diffusion flame or a plasma. The resultant spectra and analysis presented herein demonstrates the detection of new compositions like SiHF in the gas phase. The invention allows for pinpoint spatial probing of the reactor without perturbing the reaction. Thus, a deposition process can be controlled by monitoring a selected species and adjusting the deposition reaction parameters in response to the species' mere detection or relative concentration. The invention also contemplates perturbing deposition reactions by selectively exciting a species present in the deposition reaction to modify the deposited material so that the quality of the deposited material improves. Specifically, improved photovoltaic devices which include photoconductive material made in accordance with the present invention are disclosed herein.
摘要翻译：本发明一般涉及使用通过选择性光学激发获得的荧光信号来检测和监测在各种反应物的流动反应或分解过程中存在的物质。使用可调激光器作为选择性激发源与与扩散火焰或等离子体引起这种反应的反应器组合的现场分析这些反应。本文提出的所得光谱和分析证明了在气相中检测新的组成如SiHF。本发明允许反应器的精确的空间探测，而不扰乱反应。因此，可以通过监测所选择的物种并响应于物种的纯粹检测或相对浓度来调节沉积反应参数来控制沉积过程。本发明还考虑通过选择性地激发沉积反应中存在的物质来改变沉积的材料来扰乱沉积反应，从而改善沉积材料的质量。具体地，本文公开了包括根据本发明制造的光电导材料的改进的光伏器件。

20. 发明授权

US4615294A Barrel reactor and method for photochemical vapor deposition 失效
标题翻译：桶反应器和光化学气相沉积法
公开(公告)号：US4615294A
公开(公告)日：1986-10-07
申请号：US636446
申请日：1984-07-31
申请人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
发明人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C23C14/00
CPC分类号： C23C16/45578 , C23C16/45589 , C23C16/482 , C23C16/488
摘要： An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.
摘要翻译：用于光化学气相沉积的装置包括外反应器壳和限定光化学反应区的同心内壳。辐射源位于透明内壳的中心位置，其将辐射源与反应区中存在的气相反应物隔离。旋转气体歧管位于反应区内，以使气相反应物在反应区内均匀分布。保护液体连续地施加到内壳的外表面，并通过刮片传播成薄膜，以防止反应产物沉积到内壳的外壁上。辐射源的中心位置以及保护液膜可以最佳地利用由辐射源产生的反应诱导辐射。此外，旋转气体歧管促进了选定材料的层的均匀沉积在放置在反应区内的衬底上。

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