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1. 发明授权

US4419385A Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby 失效
标题翻译：用于在导电表面上沉积氧化物介电层的低温工艺和由此形成的多层结构
公开(公告)号：US4419385A
公开(公告)日：1983-12-06
申请号：US305009
申请日：1981-09-24
申请人： John W. Peters
发明人： John W. Peters
IPC分类号： C23C16/40 , H01L21/316 , B05D5/12 , B32B9/04 , C23C11/00
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02211 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： The specification discloses a low temperature process for forming an effective insulating layer of a selected oxide on the surface of a chosen conductive substrate. The oxide so formed has low pinhole density, good surface morphology, and good step coverage. In addition, the disclosed process simultaneously minimizes the deformation or restructuring of the surface of a temperature-sensitive conductive substrate, which would produce unwanted hillocks or spikes that degrade the insulating properties of the oxide. In accordance with the disclosed process, the substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free atomic oxygen to produce a reaction between the atomic oxygen and the vapor phase reactant to form the selected oxide, which deposits on the surface of the conductive substrate. Improved multilayer structures comprising multiple layers of conductive material separated by an oxide dielectric layer are formed by the disclosed process.
摘要翻译：本说明书公开了一种用于在所选择的导电衬底的表面上形成选定氧化物的有效绝缘层的低温工艺。这样形成的氧化物具有低的针孔密度，良好的表面形态和良好的阶梯覆盖。此外，所公开的方法同时最小化温度敏感导电基材的表面的变形或重组，这将产生降低氧化物绝缘性能的不希望的小丘或尖峰。根据所公开的方法，在中性，无电荷的原子氧的存在下，将衬底暴露于所选择的气相反应物，以在原子氧和气相反应物之间产生反应，形成所选择的氧化物，其沉积在导电基板的表面。通过公开的方法形成包括由氧化物介电层分离的多层导电材料的改进的多层结构。

2. 发明授权

US4631199A Photochemical vapor deposition process for depositing oxide layers 失效
标题翻译：用于沉积氧化物层的光化学气相沉积工艺
公开(公告)号：US4631199A
公开(公告)日：1986-12-23
申请号：US757562
申请日：1985-07-22
申请人： James T. Hall , John W. Peters
发明人： James T. Hall , John W. Peters
IPC分类号： C23C16/40 , C23C16/48 , H01L21/316 , C23C16/50
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/48 , H01L21/02211 , H01L21/02277 , H01L21/31612
摘要： An improved process for depositing an oxide layer on a substrate by exposing the substrate to a selected vapor phase reactant and an oxygen-containing precursor comprising nitrous oxide mixed with molecular oxygen in a predetermined ratio, in the presence of radiation of a selected wavelength. The radiation causes the direct dissociation of the oxygen-containing precursor to form neutral oxygen atoms that react with the vapor phase reactant and form the oxide, which deposits as a layer on the substrate. The rate of reaction to form and deposit the oxide layer is enhanced by the mixing of molecular oxygen with nitrous oxide in the precursor.
摘要翻译：一种改进的方法，用于在所选择的波长的辐射存在下，将衬底暴露于所选择的气相反应物和含有氧分子的预氧化合物前体中，以将氧化层沉积在衬底上。辐射导致含氧前体的直接解离形成中性氧原子，其与气相反应物反应并形成氧化物，其作为一层沉积在基底上。通过在前体中将分子氧与一氧化二氮混合来提高形成和沉积氧化物层的反应速率。

3. 发明授权

US4597986A Method for photochemical vapor deposition 失效
标题翻译：光化学气相沉积方法
公开(公告)号：US4597986A
公开(公告)日：1986-07-01
申请号：US764815
申请日：1985-08-12
申请人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
发明人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , B05D3/06
CPC分类号： C23C16/45578 , C23C16/45589 , C23C16/482 , C23C16/487 , C23C16/488
摘要： An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.
摘要翻译：用于光化学气相沉积的装置包括外反应器壳和限定光化学反应区的同心内壳。辐射源位于透明内壳的中心位置，其将辐射源与反应区中存在的气相反应物隔离。旋转气体歧管位于反应区内，以使气相反应物在反应区内均匀分布。保护液体连续地施加到内壳的外表面，并通过刮片传播成薄膜，以防止反应产物沉积到内壳的外壁上。辐射源的中心位置以及保护液膜可以最佳地利用由辐射源产生的反应诱导辐射。此外，旋转气体歧管促进了选定材料的层的均匀沉积在放置在反应区内的衬底上。

4. 发明授权

US4513057A Process for forming sulfide layers 失效
标题翻译：形成硫化物层的方法
公开(公告)号：US4513057A
公开(公告)日：1985-04-23
申请号：US573267
申请日：1984-01-23
申请人： John W. Peters
发明人： John W. Peters
IPC分类号： C23C16/30 , C23C16/48 , H01L21/314 , H01L21/471 , H01L31/0216 , H01L31/18 , H01L21/18
CPC分类号： C23C16/482 , C23C16/306 , H01L21/314 , H01L21/471 , H01L31/02161 , H01L31/18 , Y10T428/265
摘要： The specification discloses a low-temperature process for depositing a layer of a sulfide of a chosen element, such as zinc sulfide, on the surface of a substrate while simultaneously avoiding damage to the substrate. The process comprises exposing the substrate to a selected vapor phase reactant containing the chosen metal, such as dimethyl zinc, in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The sulfur atoms react with the vapor phase reactant to form the sulfide thereof, such as zinc sulfide, which deposits as a layer on the surface of the substrate. In a preferred process embodiment, the neutral sulfur atoms are generated by photochemical dissociation. In addition, there is disclosed a process for forming a native sulfide layer on the surface of a chosen substrate by exposing the substrate to neutral, charge-free sulfur atoms.
摘要翻译：该说明书公开了一种用于在衬底的表面上沉积所选元素硫化锌的硫化物层的低温工艺，同时避免对衬底的损坏。该方法包括将所述底物暴露于所选择的含有所选择的金属如二甲基锌的气相反应物中，在不产生带电粒子和高能量辐射的方式形成的中性无电荷硫原子的存在下，损坏基板。硫原子与气相反应物反应形成其硫化物，例如硫化锌，其作为一层沉积在基材的表面上。在优选的方法实施方案中，通过光化学解离产生中性硫原子。此外，公开了通过将衬底暴露于中性的无电荷硫原子在所选衬底的表面上形成天然硫化物层的方法。

5. 发明授权

US4346077A Method for reducing incidence of periparturient disorders in cows 失效
标题翻译：减少牛周围疾病发生率的方法
公开(公告)号：US4346077A
公开(公告)日：1982-08-24
申请号：US253374
申请日：1981-04-13
申请人： Darwin G. Braund , Thomas J. Fronk , Richard L. Goings , John W. Peters , Robert L. Steele
发明人： Darwin G. Braund , Thomas J. Fronk , Richard L. Goings , John W. Peters , Robert L. Steele
IPC分类号： A61K33/10 , A61K33/06
CPC分类号： A61K33/10
摘要： The invention comprises an improved method for administering calcium dosages to periparturient dairy cows, resulting in significant decreases in the incidence of milk fever and retained placenta. The single dosage comprises 18 to 36 grams of readily absorbable calcium, preferably finely powdered calcium carbonate in an amount which provides about 30 grams of available calcium. The dosage, preferably in the form of one or more compacted pellets, is administered orally within a period of 0 to 8 hours (preferably 0-2 hours) after parturition. The oral dosage is forcefully administered, as opposed to being offered to the cow in the form of a feed or drinking water supplement.
摘要翻译：本发明包括对周围奶牛施用钙剂量的改进方法，导致牛奶发热和保留的胎盘的发生率显着降低。单次剂量包含18至36克容易吸收的钙，优选细粉末状碳酸钙，其量可提供约30克可用钙。优选以一种或多种压实颗粒的形式的剂量在分娩后0至8小时（优选0-2小时）内口服给药。口服剂量被强制施用，而不是以饲料或饮用水补充剂的形式提供给母牛。

6. 发明授权

US4181751A Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition 失效
标题翻译：通过光化学气相沉积制备低温氮化硅膜的工艺
公开(公告)号：US4181751A
公开(公告)日：1980-01-01
申请号：US910704
申请日：1978-05-24
申请人： Thomas C. Hall , John W. Peters
发明人： Thomas C. Hall , John W. Peters
IPC分类号： C23C16/34 , C23C16/48 , H01L21/318 , C01B21/06 , B05D3/06
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/482
摘要： Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300.degree. C. downward to 100.degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si.sub.3 N.sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.
摘要翻译：通过光化学气相沉积工艺在300℃至100℃的温度范围内制备出优质的低温光子氮化物（LTPN）膜，其中使硅烷，氨和肼的混合物反应形成 Si3N4薄膜在基板界面。这些膜适用于在诸如金属氧化物半导体（MOS）和电荷耦合器件的固态器件上制备氮化硅钝化层，以增强可靠性。

7. 发明申请

US20080302669A1 Composite Nanomaterials for Photocatalytic Hydrogen Production and Method of Their Use 审中-公开
标题翻译：用于光催化氢生产的复合纳米材料及其使用方法
公开(公告)号：US20080302669A1
公开(公告)日：2008-12-11
申请号：US11914522
申请日：2006-05-16
申请人： John W. Peters , Mark J. Young , Trevor Douglas , Timothy E. Elgren
发明人： John W. Peters , Mark J. Young , Trevor Douglas , Timothy E. Elgren
IPC分类号： C25B1/02
CPC分类号： C12N11/14 , C12N9/0067 , C12P3/00
摘要： The present invention is directed to a composite material for photocatalytic H2 production comprising: 1) a polymer gel; 2) a photocatalyst; and a protein based H2 catalyst. The invention also relates to a method to produce H2, comprising reacting an electron donor with a composite material comprising 1) a polymer gel, 2) a photocatalyst, and 3) a protein based H2 catalyst.
摘要翻译：本发明涉及一种用于光催化H2生产的复合材料，包括：1）聚合物凝胶; 2）光催化剂; 和基于蛋白质的H 2催化剂。本发明还涉及产生H 2的方法，包括使电子给体与复合材料反应，所述复合材料包括1）聚合物凝胶，2）光催化剂，和3）基于蛋白质的H 2催化剂。

8. 发明授权

US4623426A Low temperature process for depositing epitaxial layers 失效
标题翻译：用于沉积外延层的低温工艺
公开(公告)号：US4623426A
公开(公告)日：1986-11-18
申请号：US700051
申请日：1985-02-08
申请人： John W. Peters
发明人： John W. Peters
IPC分类号： C30B25/02 , C30B29/16 , C30B29/46
CPC分类号： C30B25/02 , C30B29/16 , C30B29/46
摘要： The specification discloses a low temperature process for depositing an epitaxial layer of a selected oxide or a selected sulfide material on a chosen substrate. The substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free oxygen atoms or sulfur atoms to produce a reaction between the atomic species and the vapor phase reactant to form the desired oxide or sulfide and induce the crystalline growth thereof as an epitaxial layer on the surface of the substrate. The atomic oxygen or the atomic sulfur is formed at a low temperature by the photochemical dissociation of a selected oxygen-containing precursor or a selected sulfur-containing precursor, respectively.
摘要翻译：该说明书公开了一种用于在所选择的衬底上沉积所选择的氧化物或选定的硫化物材料的外延层的低温工艺。在中性，无电荷的氧原子或硫原子的存在下，将衬底暴露于所选择的气相反应物，以在原子物质和气相反应物之间产生反应，形成所需的氧化物或硫化物并诱导其结晶生长作为衬底表面上的外延层。分别通过选择的含氧前体或所选择的含硫前体的光化学解离，在低温下形成原子氧或原子硫。

9. 发明授权

US4615294A Barrel reactor and method for photochemical vapor deposition 失效
标题翻译：桶反应器和光化学气相沉积法
公开(公告)号：US4615294A
公开(公告)日：1986-10-07
申请号：US636446
申请日：1984-07-31
申请人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
发明人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C23C14/00
CPC分类号： C23C16/45578 , C23C16/45589 , C23C16/482 , C23C16/488
摘要： An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.
摘要翻译：用于光化学气相沉积的装置包括外反应器壳和限定光化学反应区的同心内壳。辐射源位于透明内壳的中心位置，其将辐射源与反应区中存在的气相反应物隔离。旋转气体歧管位于反应区内，以使气相反应物在反应区内均匀分布。保护液体连续地施加到内壳的外表面，并通过刮片传播成薄膜，以防止反应产物沉积到内壳的外壁上。辐射源的中心位置以及保护液膜可以最佳地利用由辐射源产生的反应诱导辐射。此外，旋转气体歧管促进了选定材料的层的均匀沉积在放置在反应区内的衬底上。

10. 发明授权

US4371587A Low temperature process for depositing oxide layers by photochemical vapor deposition 失效
标题翻译：通过光化学气相沉积沉积氧化物层的低温工艺
公开(公告)号：US4371587A
公开(公告)日：1983-02-01
申请号：US247571
申请日：1981-03-26
申请人： John W. Peters
发明人： John W. Peters
IPC分类号： C23C16/40 , C23C16/48 , H01L21/225 , H01L21/316 , H01L21/473 , B32B9/04 , B32B13/04
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/482 , H01L21/02126 , H01L21/02129 , H01L21/02142 , H01L21/02277 , H01L21/2255 , H01L21/31608 , H01L21/31612 , H01L21/31625 , H01L21/473 , Y10T428/31678
摘要： The specification discloses a low temperature process for depositing oxide layers on a substrate by photochemical vapor deposition, by exposing the substrate to a selected vapor phase reactant in the presence of photochemically generated neutral (un-ionized) oxygen atoms. The oxygen atoms react with the vapor phase reactant to form the desired oxide, which deposits as a layer on the substrate. The use of photochemically generated neutral oxygen atoms avoids damage to the substrate due to charge bombardment or radiation bombardment of the substrate. The deposited oxide layer may optionally incorporate a selected dopant material in order to modify the physical, electrical, or optical characteristics of the oxide layer.
摘要翻译：本说明书公开了一种用于通过光化学气相沉积在衬底上沉积氧化物层的低温工艺，其通过在光化学产生的中性（未离子化）氧原子的存在下将衬底暴露于选定的气相反应物。氧原子与气相反应物反应形成期望的氧化物，其在衬底上作为一层沉积。光电化学产生的中性氧原子的使用避免了由于电荷轰击或衬底的辐射轰击对衬底的损伤。沉积的氧化物层可以可选地结合所选择的掺杂剂材料，以便改变氧化物层的物理，电学或光学特性。

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