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1. 发明授权

US06520189B1 CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US06520189B1
公开(公告)日：2003-02-18
申请号：US09398059
申请日：1999-09-17
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： B08B312
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

2. 发明授权

US5610405A Electronic device for measuring light properties 失效
标题翻译：用于测量光性能的电子设备
公开(公告)号：US5610405A
公开(公告)日：1997-03-11
申请号：US216529
申请日：1994-03-23
申请人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
发明人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
IPC分类号： G11B11/08 , G11B11/12 , G11C7/00 , G11C13/04 , G01J1/24 , G01J1/42
CPC分类号： G11C7/005 , G11B11/08 , G11B11/12 , G11C13/047
摘要： An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first electromagnetic emission, (which may include visible light, ultraviolet light, gamma rays, or x-rays) having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with a second electromagnetic emission having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first emission can be known by measuring the induced photocurrent.
摘要翻译：一种电子设备，包括具有光电导性，能带隙和陷阱水平的材料。该材料以多晶金刚石薄膜为代表。该材料用具有小于材料的能带隙的光子能量的第一电磁发射（其可以包括可见光，紫外光，γ射线或X射线）照射。然后，用具有大于材料的能带隙的光子能量的第二电磁发射来照射材料，从而引起光电流。通过测量感应的光电流可以知道第一次发射的量。

3. 发明授权

US4730903A Ferroelectric crystal display panel and manufacturing method thereof 失效
标题翻译：铁电晶体显示面板及其制造方法
公开(公告)号：US4730903A
公开(公告)日：1988-03-15
申请号：US821840
申请日：1986-01-23
申请人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
发明人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
IPC分类号： G02F1/1365 , G02F1/13
CPC分类号： G02F1/1365 , Y10S359/90
摘要： A ferroelectric liquid crystal display having a matrix of ferroelectric liquid crystal elements and nonlinear elements having a diode characteristic in which the liquid crystal elements are connected in series with the nonlinear elements. The first substrate member comprises (a) a transparent first substrate having an insulating surface, (b) a plurality of m.times.n (m>1, n>1) of rectangular transparent conductive layers C.sub.11 to C.sub.1n, C.sub.21 to C.sub.2n, . . . C.sub.m1 to C.sub.mn arranged on the substrate in a matrix form on the first substrate, (c) a layer member A.sub.ij formed on the conductive layer C.sub.ij (where i=1, 2 . . . m and j=1, 2 . . . n) and (d) a stripe-like conductive layer F.sub.i extending in the row direction and making contact with layer member A.sub.i1 to A.sub.in on the side opposite from the conductive layer C.sub.i1 to C.sub.in, wherein the opposing side surfaces a and a' of the layer member A.sub.ij defining is length are substantially aligned with the opposing side surfaces b and b' of the conductive layer C.sub.ij defining its width, respectively, and wherein the opposing side surface b and b' of the layer member A.sub.ij defining its width are substantially aligned with the opposing side surfaces b and b' of the conductive layer F.sub.i defining its width, respectively. The layer member A.sub.ij may be a laminate layer of a first nontransparent conductive layer, non-single-crystal semiconductor layer member or thin insulating layer which permits passage therethrough of tunnel current and a second nontransparent conductive layer.
摘要翻译：具有铁电液晶元件的矩阵的铁电液晶显示器和具有二极管特性的非线性元件，其中液晶元件与非线性元件串联连接。第一衬底构件包括（a）具有绝缘表面的透明第一衬底，（b）矩形透明导电层C11至C1n，C21至C2n的多个m1n（m1，n≥1）。。。 Cm1至Cmn以矩阵形式布置在第一衬底上的衬底上，（c）形成在导电层Cij上的层构件Aij（其中i = 1,2 ...和j = 1,2 ...））和（d）沿行方向延伸的条状导电层Fi，并且在与导电层Ci1至Cin相对的一侧与层构件Ai1至Ain接触，其中层的相对侧表面a和a' 构件Aij的长度分别基本上与导电层Cij的相对的侧表面b和b'对准，以限定其宽度，并且其中限定其宽度的层构件Aij的相对的侧表面b和b'基本上与导电层Fi的相对的侧表面b和b'分别限定其宽度。层构件Aij可以是允许隧道电流通过的第一非透明导电层，非单晶半导体层构件或薄绝缘层的层压层和第二非透明导电层。

4. 发明授权

US07507615B2 Method of manufacturing gate insulated field effect transistors 失效
标题翻译：栅极绝缘场效应晶体管的制造方法
公开(公告)号：US07507615B2
公开(公告)日：2009-03-24
申请号：US10401891
申请日：2003-03-31
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

5. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

6. 发明授权

US5469424A Electronic device utilizing a material capable of storing information which is readable by illumination 失效
标题翻译：利用能够存储可通过照明读取的信息的材料的电子设备
公开(公告)号：US5469424A
公开(公告)日：1995-11-21
申请号：US199955
申请日：1994-02-22
申请人： Takashi Inushima , Rimantas Vaitkus
发明人： Takashi Inushima , Rimantas Vaitkus
IPC分类号： G01J1/42 , G11B11/08 , G11C13/04 , G01J1/02
CPC分类号： G01J1/429 , G11B11/08 , G11C13/047
摘要： An electronic device comprising a diamond illuminated with ultraviolet radiation, a light source for illuminating the diamond with visible light, and a means for measuring a photocurrent induced in the diamond. The ultraviolet radiation has wavelengths shorter than about 230 nm corresponding to the energy bandgap of the diamond and is made to impinge on the diamond. Then, the light which has wavelengths longer than about 230 nm is made to impinge on the diamond. The photocurrent induced in the diamond is measured. In this way, the amount of the previously emitted ultraviolet radiation having wavelengths shorter than about 230 nm is known. Although the diamond is a primary substance to be illuminated, the substance to be illuminated comprises a material selected from a group consisting of diamond, boron nitride, aluminum nitride and a multi-layer thereof.
摘要翻译：一种电子设备，包括用紫外线照射的金刚石，用可见光照射金刚石的光源，以及用于测量在金刚石中引起的光电流的装置。紫外线辐射具有短于约230nm的波长，对应于金刚石的能量带隙并使其撞击在金刚石上。然后，使波长超过约230nm的光照射在金刚石上。测量在金刚石中诱发的光电流。以这种方式，已知波长短于约230nm的先前发射的紫外线辐射的量。虽然金刚石是要被照明的主要物质，但被照射的物质包括选自金刚石，氮化硼，氮化铝及其多层的材料。

7. 发明授权

US5406081A Infrared detector utilizing diamond film 失效
标题翻译：使用金刚石膜的红外探测器
公开(公告)号：US5406081A
公开(公告)日：1995-04-11
申请号：US158214
申请日：1993-11-29
申请人： Takashi Inushima
发明人： Takashi Inushima
IPC分类号： G01J5/20 , H01L31/028 , H01L31/18 , H01L31/0256
CPC分类号： G01J5/20 , H01L31/028 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.
摘要翻译：使用具有高响应速度和灵敏度的金刚石薄膜的检测器。可以通过向其中掺杂硼而在金刚石膜的上部形成p型层。由于传感器层和储热层联合在一层中，所以可以实现更高的灵敏度和更高的响应速度。

8. 发明授权

US4943710A Image sensor and manufacturing method for the same 失效
标题翻译：图像传感器及其制造方法相同
公开(公告)号：US4943710A
公开(公告)日：1990-07-24
申请号：US211225
申请日：1988-06-22
申请人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
发明人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
IPC分类号： G06K7/10 , H01L27/146 , H01L31/105 , H04N5/228 , H04N5/369
CPC分类号： G06K7/10841 , H01L27/14643 , H01L31/1055 , H04N3/1581 , Y10S148/092
摘要： This invention relates to an image sensor and manufacturing method for the same.
摘要翻译：本发明涉及一种图像传感器及其制造方法。

9. 发明授权

US06566175B2 Method of manufacturing gate insulated field effect transistors 失效
公开(公告)号：US06566175B2
公开(公告)日：2003-05-20
申请号：US09877059
申请日：2001-06-11
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

10. 发明授权

US06261877B1 Method of manufacturing gate insulated field effect transistors 失效
标题翻译：栅极绝缘场效应晶体管的制造方法
公开(公告)号：US06261877B1
公开(公告)日：2001-07-17
申请号：US08677331
申请日：1996-07-02
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

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