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11. 发明授权

US5280156A Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means 失效
标题翻译：具有陶瓷基板和具有静电夹持装置的电介质层的晶片加热装置
公开(公告)号：US5280156A
公开(公告)日：1994-01-18
申请号：US811946
申请日：1991-12-23
申请人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
发明人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
IPC分类号： H01L21/00 , H05B3/20
CPC分类号： H01L21/67103 , H01L2924/0002 , Y10T279/23
摘要： A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.
摘要翻译：可以获得晶片加热装置，其防止在加热晶片时由晶片的偏转或变形等引起的局部间隙的形成，从而提高晶片的热处理的生产率。该装置包括陶瓷基板，嵌入陶瓷基板中的发热电阻元件，形成在陶瓷基板的前表面上的膜电极和形成在陶瓷基板的前表面上的陶瓷电介质层，以涂覆膜电极。提供直流电源以通过电介质层在晶片和膜电极之间产生库仑力，以将晶片吸引到电介质层的晶片吸引表面，同时通过激励加热晶片吸引表面的晶片所述发热元件通过其中的电流施加。还公开了一种制造晶片加热装置的方法。

12. 发明授权

US06225606B1 Ceramic heater 有权
标题翻译：陶瓷加热器
公开(公告)号：US06225606B1
公开(公告)日：2001-05-01
申请号：US09222223
申请日：1998-12-29
申请人： Hideyoshi Tsuruta , Ryusuke Ushikoshi , Kazuaki Yamaguchi
发明人： Hideyoshi Tsuruta , Ryusuke Ushikoshi , Kazuaki Yamaguchi
IPC分类号： H05B368
CPC分类号： H05B3/74 , H05B3/283 , H05B2203/014
摘要： A ceramic heater includes a ceramic substrate having a heating surface, and a resistance heating element buried inside the ceramic substrate, wherein at least a part of the resistance heating element is constituted by a conductive network member, and a ceramic material constituting the ceramic substrate is filled in meshes of the network member.
摘要翻译：陶瓷加热器包括具有加热面的陶瓷基板和埋在陶瓷基板内的电阻加热元件，其中电阻加热元件的至少一部分由导电网络构件构成，构成陶瓷基板的陶瓷材料为填充网络成员的网格。

13. 发明授权

US6101969A Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 失效
标题翻译：等离子体发生电极装置，电极嵌入制品及其制造方法
公开(公告)号：US6101969A
公开(公告)日：2000-08-15
申请号：US94674
申请日：1998-06-15
申请人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
发明人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
IPC分类号： C04B35/645 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.
摘要翻译：一种等离子体产生电极装置，包括由致密陶瓷制成的基板31和埋在所述基板31中的电极55，其中所述电极55与所述基板31的设定面隔离，并且在所述基板上产生等离子体。电磁波透过层37的最小厚度优选为0.1mm以上，电磁波透过层的平均厚度为0.5mm以上，电极55为金属制的平面电极，并且电极是没有接合面的单片烧结体。该结构可以应用于电动集尘器，电磁屏蔽装置或静电吸盘。这些可以优选安装在使用卤素类腐蚀性气体的半导体制造单元内。电极可以嵌入在由无接头的无接头无面的整体式烧结体制成的致密衬底中，其通过热压烧结陶瓷模制件，并且在压力下由平板金属体制成的电极施加在电极的厚度方向上。

14. 发明授权

US5767027A Aluminum nitride sintered body and its production method 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5767027A
公开(公告)日：1998-06-16
申请号：US669492
申请日：1996-07-11
申请人： Atsushi Sakon , Ryusuke Ushikoshi , Koichi Umemoto , Hiromichi Kobayashi
发明人： Atsushi Sakon , Ryusuke Ushikoshi , Koichi Umemoto , Hiromichi Kobayashi
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body is provided comprising metal elements contained in an amount of not more than 100 ppm for each metal element except for aluminum and assuming black color of a lightness of not more than N 4 according to the definition of JIS Z 8721. The aluminum nitride sintered body has preferably a relative density of at least 99.3% and crystal grains constituting the sintered body have an average particle diameter of at least 0.6 .mu.m but not more than 4.0 .mu.m. A powder of aluminum nitride obtained by reduction nitriding method is sintered at a temperature of at least 1,800.degree. C. under a pressure of at least 120 kg/cm.sup.2. Sintering temperature is preferably not more than 2,000.degree. C. and the sintering is preferably effected for at least 2 hrs but not more than 5 hrs.
摘要翻译： PCT No.PCT / JP95 / 00141 Sec。 371日期：1996年7月11日 102（e）日期1996年7月11日PCT提交1995年2月3日PCT公布。公开号WO95 / 21139 日期1995年8月10日提供了一种氮化铝烧结体，其包括除了铝之外的每个金属元素含有不超过100ppm的金属元素，并且假定根据以下定义的亮度不大于N 4的黑色 JIS Z 8721。氮化铝烧结体的相对密度优选为99.3％以上，构成烧结体的晶粒的平均粒径为0.6μm以上且4.0μm以下。通过还原氮化方法获得的氮化铝粉末在至少1800℃的温度下在至少120kg / cm 2的压力下烧结。烧结温度优选不超过2000℃，并且烧结优选进行至少2小时但不超过5小时。

15. 发明授权

US5490228A Heating units for use in semiconductor-producing apparatuses and production thereof 失效
标题翻译：用于半导体制造装置的加热装置及其制造
公开(公告)号：US5490228A
公开(公告)日：1996-02-06
申请号：US35804
申请日：1993-03-23
申请人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
发明人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
IPC分类号： H01L21/00 , H01L21/205 , F26B19/00
CPC分类号： H01L21/67103 , H01L2924/0002
摘要： A wafer heater for use in a semiconductor producing apparatus or the like. The heater includes a discoidal substrate made of a dense ceramic, and a resistance heating element buried in the substrate. The surface of the substrate other than that surface upon which a wafer is to be placed for heating is a flat surface. The heating unit further includes a hollow sheath of which inner pressure is not substantially varied even when the pressure inside the chamber changes and is partially embedded and joined to the heater, and a thermocouple inserted into the hollow sheath.
摘要翻译：用于半导体制造装置等的晶片加热器。加热器包括由致密陶瓷制成的盘状基板和埋在基板中的电阻加热元件。基板表面以外的晶片被放置用于加热的表面是平坦表面。加热单元还包括中空护套，即使当室内的压力改变并且部分地嵌入并接合到加热器时，内部压力也不会实质上变化，并且插入到中空护套中的热电偶。

16. 发明授权

US5306895A Corrosion-resistant member for chemical apparatus using halogen series corrosive gas 失效
标题翻译：使用卤素系列腐蚀性气体的化学设备的耐腐蚀构件
公开(公告)号：US5306895A
公开(公告)日：1994-04-26
申请号：US857968
申请日：1992-03-26
申请人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
发明人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
IPC分类号： C04B35/581 , C04B41/50 , C04B41/85 , C23C16/458 , H01L21/00 , H01L21/683 , H01L21/205
CPC分类号： H01L21/67103 , C04B35/581 , C04B41/009 , C04B41/5018 , C04B41/85 , C23C16/4581 , C23C16/4586 , H01L21/67115 , H01L21/6831
摘要： An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.
摘要翻译：提供了用于暴露于卤素系列腐蚀性气体的半导体制造装置的陶瓷加热器的优良的耐腐蚀构件。耐蚀部件使用氮化铝和氧化铝烧结体之一作为基板。还公开了使用耐腐蚀性构件的陶瓷加热器以及使用陶瓷加热器的半导体加热装置。

17. 发明授权

US4762461A Leakless pump 失效
标题翻译：无泄漏泵
公开(公告)号：US4762461A
公开(公告)日：1988-08-09
申请号：US941105
申请日：1986-12-12
申请人： Ryusuke Ushikoshi
发明人： Ryusuke Ushikoshi
IPC分类号： F04D15/02 , F04D29/00
CPC分类号： F04D15/0272
摘要： A leakless pump for sucking and delivering a liquid includes a rotor having an impeller thereon and rotatably journaled by bearings, and a casing surrounding the rotor and the impeller. The pump comprises a bypath for flowing part of the liquid from a high pressure portion in the proximity of an outer circumference of the impeller to a low pressure portion on a side of an inlet of the pump, at least one pressure detecting aperture formed in the casing and having an inner end communicating with the bypath for measuring change in pressure in the bypath due to wear of at least one of the bearings, and pressure detecting means provided at an outer end of the pressure detecting aperture for detecting pressure change in the bypath, thereby detecting the change in pressure to detect wear of the bearings. The leakless pump is preferably further provided with at least one pressure detecting aperture opening in the high pressure portion to detect the pressure therein, thereby more exactly detecting the bearing wear by pressure difference between pressures in the bypath and the high pressure portion.
摘要翻译：用于吸入和输送液体的无泄漏泵包括其上具有叶轮并由轴承可旋转地轴颈的转子和围绕转子和叶轮的壳体。泵包括用于使液体的一部分从叶轮的外周附近的高压部分流到泵的入口侧的低压部分的至少一个压力检测孔，形成在并且具有与所述通路连通的内端，用于由于至少一个所述轴承的磨损而测量所述通路中的压力变化，以及设置在所述压力检测孔的外端处的压力检测装置，用于检测所述旁路中的压力变化从而检测压力变化以检测轴承的磨损。无泄漏泵优选在高压部分中进一步设置有至少一个压力检测孔开口，以检测其中的压力，从而更精确地检测通过路径和高压部分的压力之间的压力差的轴承磨损。

18. 发明授权

US06432208B1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06432208B1
公开(公告)日：2002-08-13
申请号：US09670580
申请日：2000-09-27
申请人： Satoru Kawakami , Katsuhiko Iwabuchi , Ryo Kuwajima , Ryusuke Ushikoshi , Naohito Yamada , Tetsuya Kawajiri
发明人： Satoru Kawakami , Katsuhiko Iwabuchi , Ryo Kuwajima , Ryusuke Ushikoshi , Naohito Yamada , Tetsuya Kawajiri
IPC分类号： C23C1600
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/46 , H01J2237/2001
摘要： In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.
摘要翻译：在等离子体处理装置中，提高了待处理基板的温度控制。在处理室中设置具有大致圆柱形状的陶瓷制的支撑构件。支撑构件的上端通过固态粘合气密地连接到放置台的后表面。支撑构件的下端经由下部冷却套和O形环气密地连接到处理室的底部。在形成在支撑构件内部的气氛室中设置由盘状铝块制成的冷却套。冷却套通过导热板构件安装到放置台的后表面。

19. 发明授权

US5573690A Ceramic articles 失效
标题翻译：陶瓷制品
公开(公告)号：US5573690A
公开(公告)日：1996-11-12
申请号：US396139
申请日：1995-03-01
申请人： Kazuhiro Nobori , Koichi Umemoto , Ryusuke Ushikoshi , Shinji Yamaguchi
发明人： Kazuhiro Nobori , Koichi Umemoto , Ryusuke Ushikoshi , Shinji Yamaguchi
IPC分类号： H05B3/20 , H01C3/00 , H05B3/02 , H05B3/06 , H05B3/18 , H05B3/28 , H05B3/74
CPC分类号： H05B3/06 , H05B3/283
摘要： Ceramic articles such as ceramic heaters, ceramic static chucks or the like include a substrate 1, a functional member such as a resistance heating element 2 or the like embedded in the substrate 1, a terminal 12 and a conductive wire 5A arranged therebetween. The conductive wire 5A is connected and fixed to the terminal 12, and a connection portion C between the conductive wire 5A and the terminal 12 is continued thereto. Alternatively, a post portion formed on the terminal 12 is extended in a direction crossing to a thickness direction of a plate-like substrate 1, and an end portion of the resistance heating element 2 is wound around the post portion. Alternatively, an end portion of the resistance heating element 2 is connected to the terminal 3 at a center portion in a thickness direction of the plate-like substrate 1.
摘要翻译：陶瓷制品如陶瓷加热器，陶瓷静电卡盘等包括衬底1，嵌入在衬底1中的诸如电阻加热元件2等的功能构件，端子12和布置在其间的导线5A。导线5A连接固定在端子12上，导线5A与端子12之间的连接部分C继续。或者，形成在端子12上的柱部沿与板状基板1的厚度方向交叉的方向延伸，电阻加热元件2的端部缠绕在柱部上。或者，电阻加热元件2的端部在板状基板1的厚度方向的中央部与端子3连接。

20. 发明授权

US5231690A Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters 失效
标题翻译：在使用这种加热器的半导体生产设备和加热单元中使用的加热器
公开(公告)号：US5231690A
公开(公告)日：1993-07-27
申请号：US668161
申请日：1991-03-12
申请人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
发明人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L2924/0002
摘要： A wafer heater for use in a semiconductor producing apparatus or the like. The heater includes a discoidal substrate made of a dense ceramic, and a resistance heating element buried in the substrate. The surface of the substrate other than that surface upon which a wafer is to be placed for heating is a flat surface. A heating unit is also disclosed, which includes such a heater in a chamber for the semiconductor-producing apparatus. The heating unit further involves a hollow sheath of which inner pressure is not substantially varied even when the pressure inside the chamber changes and is joined to the heater, and a thermocouple inserted into the hollow sheath. Further, a projecting support portion may be provided on the surface of the substrate other than that surface upon which the wafer is to be placed for heating, and lead wires connected to the resistance heating element, wherein when the heater is placed in the chamber, the projecting support portion forms a gas-tight seal between the chamber, and the lead wires are taken out from the chamber such that the lead wires may not substantially be exposed to an inner space inside the chamber.

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