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1. 发明授权

US5280156A Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means 失效
标题翻译：具有陶瓷基板和具有静电夹持装置的电介质层的晶片加热装置
公开(公告)号：US5280156A
公开(公告)日：1994-01-18
申请号：US811946
申请日：1991-12-23
申请人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
发明人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
IPC分类号： H01L21/00 , H05B3/20
CPC分类号： H01L21/67103 , H01L2924/0002 , Y10T279/23
摘要： A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.
摘要翻译：可以获得晶片加热装置，其防止在加热晶片时由晶片的偏转或变形等引起的局部间隙的形成，从而提高晶片的热处理的生产率。该装置包括陶瓷基板，嵌入陶瓷基板中的发热电阻元件，形成在陶瓷基板的前表面上的膜电极和形成在陶瓷基板的前表面上的陶瓷电介质层，以涂覆膜电极。提供直流电源以通过电介质层在晶片和膜电极之间产生库仑力，以将晶片吸引到电介质层的晶片吸引表面，同时通过激励加热晶片吸引表面的晶片所述发热元件通过其中的电流施加。还公开了一种制造晶片加热装置的方法。

2. 发明授权

US06197246B1 Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 有权
标题翻译：等离子体发生电极装置，电极嵌入制品及其制造方法
公开(公告)号：US06197246B1
公开(公告)日：2001-03-06
申请号：US09517312
申请日：2000-03-02
申请人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
发明人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
IPC分类号： C04B35645
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.
摘要翻译：一种等离子体产生电极装置，包括由致密陶瓷制成的基板31和埋在所述基板31中的电极55，其中所述电极55与所述基板31的设定面隔离，并且在所述基板上产生等离子体。电磁波透过层37的最小厚度优选为0.1mm以上，电磁波透过层的平均厚度为0.5mm以上，电极55为金属制的平面电极，并且电极是没有接合面的单片烧结体。该结构可以应用于电动集尘器，电磁屏蔽装置或静电吸盘。这些可以优选安装在使用卤素类腐蚀性气体的半导体制造单元内。电极可以通过热压烧结陶瓷模制件和由平面金属体制成的电极在电极的厚度方向上施加的压力下嵌入由无接头的无面组整体式烧结体制成的致密衬底中。

3. 发明授权

US5800618A Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 失效
标题翻译：等离子体发生电极装置，电极嵌入制品及其制造方法
公开(公告)号：US5800618A
公开(公告)日：1998-09-01
申请号：US491999
申请日：1995-07-18
申请人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
发明人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
IPC分类号： C04B35/645 , C23C16/00 , H01J37/32 , H01L21/00 , C23C16/50
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.
摘要翻译： PCT No.PCT / JP94 / 01063 Sec。 371 1995年7月18日第 102（e）1995年7月18日PCT PCT 1994年6月30日PCT公布。出版物WO95 / 14308 日期：1995年5月26日一种等离子体产生电极装置，包括由致密陶瓷制成的基板31和埋在所述基板31中的电极55，其中所述电极55与所述基板31的设定面隔离，并且在所述基板31上产生等离子体基质。电磁波透过层37的最小厚度优选为0.1mm以上，电磁波透过层的平均厚度为0.5mm以上，电极55为金属制的平面电极，并且电极是没有接合面的单片烧结体。该结构可以应用于电动集尘器，电磁屏蔽装置或静电吸盘。这些可以优选安装在使用卤素类腐蚀性气体的半导体制造单元内。电极可以通过热压烧结陶瓷模制件和由平面金属体制成的电极在电极的厚度方向施加的压力下嵌入由无接头无整体烧结体制成的致密衬底中。

4. 发明授权

US6101969A Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 失效
标题翻译：等离子体发生电极装置，电极嵌入制品及其制造方法
公开(公告)号：US6101969A
公开(公告)日：2000-08-15
申请号：US94674
申请日：1998-06-15
申请人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
发明人： Yusuke Niori , Koichi Umemoto , Ryusuke Ushikoshi
IPC分类号： C04B35/645 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.
摘要翻译：一种等离子体产生电极装置，包括由致密陶瓷制成的基板31和埋在所述基板31中的电极55，其中所述电极55与所述基板31的设定面隔离，并且在所述基板上产生等离子体。电磁波透过层37的最小厚度优选为0.1mm以上，电磁波透过层的平均厚度为0.5mm以上，电极55为金属制的平面电极，并且电极是没有接合面的单片烧结体。该结构可以应用于电动集尘器，电磁屏蔽装置或静电吸盘。这些可以优选安装在使用卤素类腐蚀性气体的半导体制造单元内。电极可以嵌入在由无接头的无接头无面的整体式烧结体制成的致密衬底中，其通过热压烧结陶瓷模制件，并且在压力下由平板金属体制成的电极施加在电极的厚度方向上。

5. 发明授权

US5306895A Corrosion-resistant member for chemical apparatus using halogen series corrosive gas 失效
标题翻译：使用卤素系列腐蚀性气体的化学设备的耐腐蚀构件
公开(公告)号：US5306895A
公开(公告)日：1994-04-26
申请号：US857968
申请日：1992-03-26
申请人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
发明人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
IPC分类号： C04B35/581 , C04B41/50 , C04B41/85 , C23C16/458 , H01L21/00 , H01L21/683 , H01L21/205
CPC分类号： H01L21/67103 , C04B35/581 , C04B41/009 , C04B41/5018 , C04B41/85 , C23C16/4581 , C23C16/4586 , H01L21/67115 , H01L21/6831
摘要： An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.
摘要翻译：提供了用于暴露于卤素系列腐蚀性气体的半导体制造装置的陶瓷加热器的优良的耐腐蚀构件。耐蚀部件使用氮化铝和氧化铝烧结体之一作为基板。还公开了使用耐腐蚀性构件的陶瓷加热器以及使用陶瓷加热器的半导体加热装置。

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