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1. 发明授权

US5490228A Heating units for use in semiconductor-producing apparatuses and production thereof 失效
标题翻译：用于半导体制造装置的加热装置及其制造
公开(公告)号：US5490228A
公开(公告)日：1996-02-06
申请号：US35804
申请日：1993-03-23
申请人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
发明人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
IPC分类号： H01L21/00 , H01L21/205 , F26B19/00
CPC分类号： H01L21/67103 , H01L2924/0002
摘要： A wafer heater for use in a semiconductor producing apparatus or the like. The heater includes a discoidal substrate made of a dense ceramic, and a resistance heating element buried in the substrate. The surface of the substrate other than that surface upon which a wafer is to be placed for heating is a flat surface. The heating unit further includes a hollow sheath of which inner pressure is not substantially varied even when the pressure inside the chamber changes and is partially embedded and joined to the heater, and a thermocouple inserted into the hollow sheath.
摘要翻译：用于半导体制造装置等的晶片加热器。加热器包括由致密陶瓷制成的盘状基板和埋在基板中的电阻加热元件。基板表面以外的晶片被放置用于加热的表面是平坦表面。加热单元还包括中空护套，即使当室内的压力改变并且部分地嵌入并接合到加热器时，内部压力也不会实质上变化，并且插入到中空护套中的热电偶。

2. 发明授权

US5231690A Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters 失效
标题翻译：在使用这种加热器的半导体生产设备和加热单元中使用的加热器
公开(公告)号：US5231690A
公开(公告)日：1993-07-27
申请号：US668161
申请日：1991-03-12
申请人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
发明人： Takao Soma , Ryusuke Ushikoshi , Kazuhiro Nobori
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L2924/0002
摘要： A wafer heater for use in a semiconductor producing apparatus or the like. The heater includes a discoidal substrate made of a dense ceramic, and a resistance heating element buried in the substrate. The surface of the substrate other than that surface upon which a wafer is to be placed for heating is a flat surface. A heating unit is also disclosed, which includes such a heater in a chamber for the semiconductor-producing apparatus. The heating unit further involves a hollow sheath of which inner pressure is not substantially varied even when the pressure inside the chamber changes and is joined to the heater, and a thermocouple inserted into the hollow sheath. Further, a projecting support portion may be provided on the surface of the substrate other than that surface upon which the wafer is to be placed for heating, and lead wires connected to the resistance heating element, wherein when the heater is placed in the chamber, the projecting support portion forms a gas-tight seal between the chamber, and the lead wires are taken out from the chamber such that the lead wires may not substantially be exposed to an inner space inside the chamber.

3. 发明授权

US5616024A Apparatuses for heating semiconductor wafers, ceramic heaters and a process for manufacturing the same, a process for manufacturing ceramic articles 失效
公开(公告)号：US5616024A
公开(公告)日：1997-04-01
申请号：US380190
申请日：1995-01-27
申请人： Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto , Atsushi Sakon , Yusuke Niiori , Masahiro Murasato
发明人： Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto , Atsushi Sakon , Yusuke Niiori , Masahiro Murasato
IPC分类号： H05B3/20 , B21F99/00 , C23C16/46 , C30B25/10 , C30B31/12 , F27D1/16 , F27D99/00 , H05B3/14 , F27D3/12
CPC分类号： F27D99/0006 , C23C16/46 , C30B25/10 , C30B31/12 , F27D1/16 , H05B3/143 , F27D2099/0008
摘要： A ceramic heater composed of a ceramic substrate and a resistant heating element embedded within the ceramic substrate along a predetermined planar pattern is obtained by holding a convolution of a spiral-coiled high melting metallic filament in the above predetermined planar pattern and heat-treating the convolution at a temperature not higher than a primary recrystallization commencement temperature of the high melting metal under a non-oxidative atmosphere to provide the resistant heating element, embedding the resulting resistant heating element within a ceramic shaped body, and then, sintering the ceramic shaped body. In a preferred embodiment, the resistant heating element is a convolution of a spiral coil, the number of coils per a unit length of said convolution is set at a predetermined value in each of defined domains of the ceramic heater, and when the number of coils per a unit length of the convolution is determined, the relation of the maximal value, the minimal value and the mean value, of all the determined numbers of coils in the above domains, satisfies the formula:(maximal value-minimal value)/mean value.ltoreq.0.1.Another preferred embodiment comprising a disc-shaped ceramic substrate and a resistant heating element embedded within the substrate is adapted for application in semiconductor wafer heating, wherein a resistant heating element having a planar shape composed of a plurality of concentric loops differing in diameters from each other and connecting portions which connect inner loops in sequence with outer loops to form a series of resistant heating element. In a process for manufacturing ceramic articles composed of a ceramic substrate, an electroconducting body embedded within the ceramic substrate and a conduit or pit bored avoiding the above electroconducting body in the ceramic substrate, an X-ray transmission photograph of the ceramic substrate is taken and then the conduit or pit is formed based on the X-ray transmission photograph.

4. 发明授权

US5280156A Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means 失效
标题翻译：具有陶瓷基板和具有静电夹持装置的电介质层的晶片加热装置
公开(公告)号：US5280156A
公开(公告)日：1994-01-18
申请号：US811946
申请日：1991-12-23
申请人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
发明人： Yusuke Niori , Kazuhiro Nobori , Ryusuke Ushikoshi , Koichi Umemoto
IPC分类号： H01L21/00 , H05B3/20
CPC分类号： H01L21/67103 , H01L2924/0002 , Y10T279/23
摘要： A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.
摘要翻译：可以获得晶片加热装置，其防止在加热晶片时由晶片的偏转或变形等引起的局部间隙的形成，从而提高晶片的热处理的生产率。该装置包括陶瓷基板，嵌入陶瓷基板中的发热电阻元件，形成在陶瓷基板的前表面上的膜电极和形成在陶瓷基板的前表面上的陶瓷电介质层，以涂覆膜电极。提供直流电源以通过电介质层在晶片和膜电极之间产生库仑力，以将晶片吸引到电介质层的晶片吸引表面，同时通过激励加热晶片吸引表面的晶片所述发热元件通过其中的电流施加。还公开了一种制造晶片加热装置的方法。

5. 发明授权

US5306895A Corrosion-resistant member for chemical apparatus using halogen series corrosive gas 失效
标题翻译：使用卤素系列腐蚀性气体的化学设备的耐腐蚀构件
公开(公告)号：US5306895A
公开(公告)日：1994-04-26
申请号：US857968
申请日：1992-03-26
申请人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
发明人： Ryusuke Ushikoshi , Kazuhiro Nobori , Yusuke Niori , Koichi Umemoto , Hiromichi Kobayashi , Toshihiko Honda , Kenji Kawabata
IPC分类号： C04B35/581 , C04B41/50 , C04B41/85 , C23C16/458 , H01L21/00 , H01L21/683 , H01L21/205
CPC分类号： H01L21/67103 , C04B35/581 , C04B41/009 , C04B41/5018 , C04B41/85 , C23C16/4581 , C23C16/4586 , H01L21/67115 , H01L21/6831
摘要： An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.
摘要翻译：提供了用于暴露于卤素系列腐蚀性气体的半导体制造装置的陶瓷加热器的优良的耐腐蚀构件。耐蚀部件使用氮化铝和氧化铝烧结体之一作为基板。还公开了使用耐腐蚀性构件的陶瓷加热器以及使用陶瓷加热器的半导体加热装置。

6. 发明授权

US5573690A Ceramic articles 失效
标题翻译：陶瓷制品
公开(公告)号：US5573690A
公开(公告)日：1996-11-12
申请号：US396139
申请日：1995-03-01
申请人： Kazuhiro Nobori , Koichi Umemoto , Ryusuke Ushikoshi , Shinji Yamaguchi
发明人： Kazuhiro Nobori , Koichi Umemoto , Ryusuke Ushikoshi , Shinji Yamaguchi
IPC分类号： H05B3/20 , H01C3/00 , H05B3/02 , H05B3/06 , H05B3/18 , H05B3/28 , H05B3/74
CPC分类号： H05B3/06 , H05B3/283
摘要： Ceramic articles such as ceramic heaters, ceramic static chucks or the like include a substrate 1, a functional member such as a resistance heating element 2 or the like embedded in the substrate 1, a terminal 12 and a conductive wire 5A arranged therebetween. The conductive wire 5A is connected and fixed to the terminal 12, and a connection portion C between the conductive wire 5A and the terminal 12 is continued thereto. Alternatively, a post portion formed on the terminal 12 is extended in a direction crossing to a thickness direction of a plate-like substrate 1, and an end portion of the resistance heating element 2 is wound around the post portion. Alternatively, an end portion of the resistance heating element 2 is connected to the terminal 3 at a center portion in a thickness direction of the plate-like substrate 1.
摘要翻译：陶瓷制品如陶瓷加热器，陶瓷静电卡盘等包括衬底1，嵌入在衬底1中的诸如电阻加热元件2等的功能构件，端子12和布置在其间的导线5A。导线5A连接固定在端子12上，导线5A与端子12之间的连接部分C继续。或者，形成在端子12上的柱部沿与板状基板1的厚度方向交叉的方向延伸，电阻加热元件2的端部缠绕在柱部上。或者，电阻加热元件2的端部在板状基板1的厚度方向的中央部与端子3连接。

7. 发明授权

US06975497B2 Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor 失效
标题翻译：用于从静电卡盘减少颗粒的方法和用于制造半导体的设备
公开(公告)号：US06975497B2
公开(公告)日：2005-12-13
申请号：US09769519
申请日：2001-01-26
申请人： Mie Nagao , Ryusuke Ushikoshi , Masashi Ohno
发明人： Mie Nagao , Ryusuke Ushikoshi , Masashi Ohno
IPC分类号： B23Q3/15 , G03F7/20 , H01L21/027 , H01L21/68 , H01L21/683 , H02N13/00
CPC分类号： G03F7/70691 , H01L21/6833 , H02N13/00 , Y10T279/23
摘要： A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.
摘要翻译：一种用于从静电卡盘减少颗粒的方法，具有以下步骤：将晶片设置在静电卡盘的吸附面上，通过向静电卡盘施加电压而将晶片吸引到吸引面上，释放由于差异引起的应力在晶片温度达到饱和温度之前，通过相对于吸引面滑动晶片，使晶片和静电卡盘之间的热膨胀，并将晶片的温度从比吸引面的温度降低到饱和温度。

8. 发明授权

US06617514B1 Ceramics joint structure and method of producing the same 失效
标题翻译：陶瓷接头结构及其制造方法
公开(公告)号：US06617514B1
公开(公告)日：2003-09-09
申请号：US09095157
申请日：1998-06-10
申请人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
发明人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
IPC分类号： H01R400
CPC分类号： H01L21/6833
摘要： The disclosed ceramics joint structure, in which a ceramics member having an oxidation resistance property and a metal member are joined via a joint layer, has a structure such that a part of the embedded member is exposed to a joint surface of the ceramics member, which is contacted with the joint layer to form a metal exposing portion, and the ceramics member and the metal exposing portion are joined via the joint layer to the metal member respectively. Moreover, the joint layer is mainly made of one or more metal selected from the group consisting of gold, platinum and palladium.
摘要翻译：所公开的具有耐氧化性的陶瓷构件和金属构件的陶瓷接头结构通过接合层接合，具有使嵌入构件的一部分暴露于陶瓷构件的接合面的结构，与接合层接触以形成金属暴露部分，并且陶瓷构件和金属暴露部分分别经由接合层接合到金属构件。此外，接合层主要由选自金，铂和钯的一种或多种金属制成。

9. 发明授权

US6057513A Joint structure of metal member and ceramic member and method of producing the same 失效
标题翻译：金属构件和陶瓷构件的接合结构及其制造方法
公开(公告)号：US6057513A
公开(公告)日：2000-05-02
申请号：US13199
申请日：1998-01-26
申请人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
发明人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
IPC分类号： C04B37/02 , H01L21/683 , H05K1/16
CPC分类号： H01L21/6833 , Y10T279/23 , Y10T29/49149
摘要： A joint structure having a metal member and a ceramic member having a housing hole for accommodating at least a part of the metal member therein, in which an electrically conductive joint layer is formed between a bottom face of the metal member and a bottom face of the housing hole, and a film having a given wettability by the electrically conductive joint layer is formed on at least a part of the side wall face of the metal member.
摘要翻译：一种具有金属构件和陶瓷构件的接合结构，其具有用于容纳至少一部分金属构件的容纳孔，其中在金属构件的底面和底面之间形成导电接合层在金属构件的侧壁面的至少一部分上形成有由导电性接合层赋予润湿性的膜的容纳孔和膜。

10. 发明授权

US5683606A Ceramic heaters and heating devices using such ceramic heaters 失效
标题翻译：陶瓷加热器和使用这种陶瓷加热器的加热装置
公开(公告)号：US5683606A
公开(公告)日：1997-11-04
申请号：US359742
申请日：1994-12-20
申请人： Ryusuke Ushikoshi , Atsushi Sakon , Koichi Umemoto , Yusuke Niiori
发明人： Ryusuke Ushikoshi , Atsushi Sakon , Koichi Umemoto , Yusuke Niiori
IPC分类号： H05B3/20 , C23C16/46 , H05B3/14 , H05B3/18 , H05B3/44 , F27D11/00
CPC分类号： C23C16/46 , H05B3/141
摘要： A ceramic heater includes a substrate made of aluminum nitride, a resistive heating element buried in the substrate and made of a metal having a high melting point, and terminals electrically connected to the resistive heating element and buried in said substrate. The terminals are made of a metal having a high melting point and a coefficient of thermal expansion not smaller than that of the substrate. The metal of the resistive heating element has a coefficient of thermal expansion not smaller than that of the substrate. The coefficient of thermal expansion of each of the terminals and the resistive heating element is in a range from 5.0.times.10.sup.-6 /.degree.C. to 8.3.times.10.sup.-6 /.degree.C.
摘要翻译：陶瓷加热器包括由氮化铝制成的基板，埋在基板中的由具有高熔点的金属制成的电阻加热元件，以及电连接到电阻加热元件并埋入所述基板中的端子。端子由具有高熔点和不小于基板的热膨胀系数的金属制成。电阻加热元件的金属的热膨胀系数不小于基板的热膨胀系数。端子和电阻加热元件的热膨胀系数在5.0×10 -6 /℃至8.3×10 -6 /℃的范围内。

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