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11. 发明授权

US08723239B2 Solid-state imaging element 有权
标题翻译：固态成像元件
公开(公告)号：US08723239B2
公开(公告)日：2014-05-13
申请号：US12172571
申请日：2008-07-14
申请人： Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
发明人： Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.
摘要翻译：固态成像元件包括形成在半导体衬底的上部以进行光电转换的光电二极管，形成在衬底上以覆盖光电二极管的二氧化硅膜和形成在二氧化硅膜上的氮化硅膜。氮化硅膜的厚度比氮化硅膜的至少一端部分薄，部分地比光电二极管的薄。

12. 发明授权

US07863661B2 Solid-state imaging device and camera having the same 有权
标题翻译：固态成像装置和具有相同功能的相机
公开(公告)号：US07863661B2
公开(公告)日：2011-01-04
申请号：US12054038
申请日：2008-03-24
申请人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
发明人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
IPC分类号： H01L29/72
CPC分类号： H01L27/14603 , H01L27/14609
摘要： Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.
摘要翻译：提供了一种包括单位像素的固态成像装置，其中单位像素包括形成在半导体衬底上的公共阱上的包括第一单位像素和第二单位像素的两种单位像素。第一单位像素包括：将光转换成信号电荷的至少一个光电转换区域; 所述第一半导体区域形成在所述共同阱上并且具有与所述公用阱的导电类型相同的导电类型; 并且所述第一触点电连接到所述第一半导体区域。第二单位像素包括：至少一个光电转换区域; 所述第二半导体区域形成在所述公井上，并且具有与所述公共井的导电类型相反的导电类型; 并且所述第二触点电连接到所述第二半导体区域。

13. 发明授权

US07567281B2 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US07567281B2
公开(公告)日：2009-07-28
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

14. 发明申请

US20090008687A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090008687A1
公开(公告)日：2009-01-08
申请号：US12166736
申请日：2008-07-02
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译：固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。

15. 发明申请

US20070111359A1 Solid-state image pickup device and method for manufacturing the same 审中-公开
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US20070111359A1
公开(公告)日：2007-05-17
申请号：US11590794
申请日：2006-11-01
申请人： Mikiya Uchida , Ryohei Miyagawa
发明人： Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14689
摘要： Realized are a solid-state image pickup device whose element patterns are miniaturized and a method for manufacturing the solid-state image pickup device, in which furnace-annealing is employed without performing a process of nitriding a gate oxide film and a rapid thermal treatment in main heat treatment processes. The method for manufacturing the solid-state image pickup device according to the present invention comprises the steps of forming respective gate insulating films of an N-channel transistor and a P-channel transistor by thermally oxidizing a semiconductor substrate; forming a gate electrode of the P-channel transistor and forming a gate electrode of the N-channel transistor so as to have a minimum gate length equal to or less than 0.3 μm; implanting impurity into the semiconductor substrate utilizing the gate electrodes as a mask; and furnace-annealing the semiconductor substrate having the impurity implanted thereinto.
摘要翻译：实现了其元件图案小型化的固态图像拾取装置和用于制造固态图像拾取装置的方法，其中在不进行氮化栅极氧化膜的工艺和快速热处理的情况下使用炉退火主要热处理工艺。根据本发明的固体摄像装置的制造方法包括以下步骤：通过热氧化半导体衬底形成N沟道晶体管和P沟道晶体管的各个栅极绝缘膜; 形成所述P沟道晶体管的栅极，并形成所述N沟道晶体管的栅电极，使其栅极长度等于或小于0.3μm; 使用栅电极作为掩模将杂质注入半导体衬底; 并对其中注入杂质的半导体衬底进行炉退火。

16. 发明授权

US06617625B2 Solid state imager 失效
标题翻译：固态成像仪具有降低的漏电流
公开(公告)号：US06617625B2
公开(公告)日：2003-09-09
申请号：US09886993
申请日：2001-06-25
申请人： Ryohei Miyagawa
发明人： Ryohei Miyagawa
IPC分类号： H01L31062
CPC分类号： H01L27/14609 , H01L27/1463
摘要： A device region surrounded by a device isolation region has a rectangular shape with a width in a direction in which a gate electrode of a transfer gate extends. A signal accumulation region of a photodiode is disposed on the entirety of that portion of the device region, which is located on a source side of the gate electrode of the transfer gate. A detection section having a width in the direction in which the gate electrode extends is disposed on that portion of the device region, which is located on a drain side of the gate electrode of the transfer gate. The size of the detection section is set to be as small as possible. Two edge portions of the detection section, which are located in the direction of extension of the gate electrode, are spaced apart from the device isolation region.
摘要翻译：由器件隔离区域围绕的器件区域具有在转移栅极的栅电极延伸的方向上具有宽度的矩形形状。光电二极管的信号存储区域设置在位于传输门的栅电极的源极侧的器件区域的整个部分上。具有栅极延伸方向的宽度的检测部分设置在位于传输门的栅电极的漏极侧的器件区域的该部分上。检测部的尺寸尽可能小。位于栅极延伸方向上的检测部分的两个边缘部分与器件隔离区间隔开。

17. 发明授权

US5506429A CCD image sensor with stacked charge transfer gate structure 失效
标题翻译： CCD图像传感器具有堆叠的电荷转移门结构
公开(公告)号：US5506429A
公开(公告)日：1996-04-09
申请号：US208750
申请日：1994-03-11
申请人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
发明人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/3728 , H01L29/765
CPC分类号： H01L27/14831
摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.
摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。电荷转移栅电极和缓冲电极通过第一接触孔相互连接。缓冲电极和并联线通过第二接触孔耦合在一起。分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

18. 发明授权

US5463232A Solid-state imaging device with internal smear eliminator 失效
标题翻译：具有内部抹污消除器的固态成像装置
公开(公告)号：US5463232A
公开(公告)日：1995-10-31
申请号：US43632
申请日：1993-04-08
申请人： Hirofumi Yamashita , Ikuko Inoue , Michio Sasaki , Ryohei Miyagawa
发明人： Hirofumi Yamashita , Ikuko Inoue , Michio Sasaki , Ryohei Miyagawa
IPC分类号： H01L27/14 , H01L27/148 , H01L29/10 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/361 , H04N5/367 , H04N5/369 , H04N5/3728 , H01L29/68 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.
摘要翻译：固态成像装置包括光敏电池阵列，每个光敏单元包括光电转换部分，该光电转换部分布置在基板的表面上并具有光接收开口。光电转换部分响应于通过该开口的入射光量而产生电载体的分组。在基板表面上与光电转换部相邻配置电荷转移部。该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域，并且使由此获得的载体依次移动。遮光部被配置为将除了开口部之外的光电转换部覆盖，以防止通过开口的入射光作为泄漏部件被引入到传送通道区域，通过切断泄漏部件的内部反射路径到此。

19. 发明授权

US07800191B2 Solid-state imaging device and method for driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US07800191B2
公开(公告)日：2010-09-21
申请号：US11716743
申请日：2007-03-12
申请人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
发明人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/042
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.
摘要翻译：提供了像素阵列，其中单元被布置成矩阵。每个单元包括光电二极管，FD，传输晶体管，复位晶体管，具有连接到FD的栅电极的放大晶体管，连接到电源线的漏极和连接到垂直信号线的源，以及 FD线。 FD线设置在第一布线中，垂直信号线设置在位于第一布线层上的第二布线中。由于FD线的电位跟随垂直信号线的电位，所以根据单元的位置，当垂直信号的位置偏移时，有可能抑制在FD中发生的电容的变化。

20. 发明授权

US07317218B2 Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region 有权
标题翻译：具有比漏极区域的端部更靠近信号聚集区域的穿通停止区域的固态成像装置
公开(公告)号：US07317218B2
公开(公告)日：2008-01-08
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：固态成像装置可以增加光电二极管中的信号电荷积累量。固态成像器件包括形成在p型半导体衬底上的栅电极。 n型信号累积区域累积通过光电转换获得的信号电荷，并且形成在半导体衬底中，使得信号聚集区域的一部分位于栅电极下方。 n型漏极区域位于半导体衬底中，使得n型漏极区域与栅电极两端的信号聚集区域相对。 p型穿通停止区域具有比半导体衬底更高的杂质浓度，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域下方，其中，通过停止区域比漏极区域的端部更靠近信号聚集区域。

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