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1. 发明授权

US07317218B2 Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region 有权
标题翻译：具有比漏极区域的端部更靠近信号聚集区域的穿通停止区域的固态成像装置
公开(公告)号：US07317218B2
公开(公告)日：2008-01-08
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：固态成像装置可以增加光电二极管中的信号电荷积累量。固态成像器件包括形成在p型半导体衬底上的栅电极。 n型信号累积区域累积通过光电转换获得的信号电荷，并且形成在半导体衬底中，使得信号聚集区域的一部分位于栅电极下方。 n型漏极区域位于半导体衬底中，使得n型漏极区域与栅电极两端的信号聚集区域相对。 p型穿通停止区域具有比半导体衬底更高的杂质浓度，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域下方，其中，通过停止区域比漏极区域的端部更靠近信号聚集区域。

2. 发明申请

US20060157756A1 Solid-state imaging device and manufacturing method thereof 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060157756A1
公开(公告)日：2006-07-20
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof. The solid-state imaging device according to the present invention includes: a gate electrode formed on a p-type semiconductor substrate; an n-type signal accumulation region which accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode; an n-type drain region which is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode; and a p-type punch-through stopper region which has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：本发明的目的是提供一种能够增加光电二极管中的信号电荷积聚量的固态成像装置及其制造方法。根据本发明的固态成像装置包括：形成在p型半导体衬底上的栅电极; 累积通过光电转换获得的信号电荷的n型信号存储区域，并形成在半导体衬底中，使得信号存储区域的一部分位于栅电极下方; 位于所述半导体衬底中的n型漏极区，使得所述n型漏极区域与所述栅电极相交的所述信号聚集区域相对; 以及具有比半导体衬底更高的杂质浓度的p型穿通止挡区域，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域的下方，其中，穿通停止区域比漏极区域的端部更靠近信号聚集区域。

3. 发明授权

US07745859B2 Solid-state image sensing apparatus and fabrication method thereof 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07745859B2
公开(公告)日：2010-06-29
申请号：US11651022
申请日：2007-01-09
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a substrate, a surface shield layer of the first conductivity type provided in a surface portion of the substrate which is located above the signal storage portion, a gate electrode provided over the substrate in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the substrate which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the substrate which is located under the gate electrode in adjacent relation to one end of the surface shield layer.
摘要翻译：固体摄像装置具有设置在基板内的第二导电型信号存储部，设置在位于信号存储部上方的基板的表面部的第一导电类型的表面屏蔽层，栅极电极，其设置在基板上，与信号存储部分的至少一端相邻;以及第二导电类型的漏极区，设置在基板的表面部分中，该表面部分在与表面屏蔽层相反的一侧，当从栅电极。第一导电类型的读取控制层进一步设置在基板的表面部分中，该表面部分位于栅极电极下面，与表面屏蔽层的一端相邻。

4. 发明申请

US20070241374A1 Solid-state image sensing apparatus and fabrication method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US20070241374A1
公开(公告)日：2007-10-18
申请号：US11651022
申请日：2007-01-09
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a semiconductor substrate or a well each of a first conductivity type to store a signal charge obtained through a photoelectric conversion, a surface shield layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located above the signal storage portion, a gate electrode provided over the semiconductor substrate or the well in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the semiconductor substrate or the well which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the semiconductor substrate or the well which is located under the gate electrode in adjacent relation to one end of the surface shield layer.
摘要翻译：固态摄像装置具有设置在半导体衬底内的第二导电类型的信号存储部分或者是通过光电转换获得的信号电荷的第一导电类型的阱，第一导电性的表面屏蔽层设置在半导体衬底或位于信号存储部分上方的阱的表面部分中的栅极电极，设置在半导体衬底或阱上的栅电极相邻于信号存储部分的至少一端，漏极所述第二导电类型的区域设置在所述半导体衬底或所述阱的表面部分中，所述第二导电类型的区域在从所述栅电极观察时位于与所述表面屏蔽层相反的一侧。第一导电类型的读取控制层进一步设置在半导体衬底的表面部分中，或位于栅电极下方的与邻近表面屏蔽层的一端相邻的阱中。

5. 发明授权

US07696546B2 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same 失效
标题翻译：具有包括硅化物层的叠层以便降低布线电阻的布线层的固态成像装置及其制造方法
公开(公告)号：US07696546B2
公开(公告)日：2010-04-13
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

6. 发明申请

US20080173911A1 SOLID-STATE IMAGING DEVICE HAVING WIRING LAYER WHICH INCLUDES LAMINATION OF SILICIDE LAYER IN ORDER TO REDUCE WIRING RESISTANCE, AND MANUFACTURING METHOD FOR THE SAME 失效
标题翻译：具有包括层状硅酸盐层的层状结构的固态成像装置，以降低接线电阻及其制造方法
公开(公告)号：US20080173911A1
公开(公告)日：2008-07-24
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/0224 , H01L21/768
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

7. 发明授权

US06840447B2 IC card reader with card holder fastening mechanism and card holder 失效
标题翻译：具有卡座固定机构和卡座的IC卡读卡器
公开(公告)号：US06840447B2
公开(公告)日：2005-01-11
申请号：US10184046
申请日：2002-06-28
申请人： Tatsuya Hirata , Masahiro Takiguchi , Kiyoshi Takahashi , Masahiro Sugiura , Akihiro Sugiura , Toshio Isobe
发明人： Tatsuya Hirata , Masahiro Takiguchi , Kiyoshi Takahashi , Masahiro Sugiura , Akihiro Sugiura , Toshio Isobe
IPC分类号： G06K19/00 , G06K7/00 , G06K17/00 , G06K7/08
CPC分类号： G06K19/005 , G06K7/0008 , G06K17/0022
摘要： An IC card reader is provided for reading data stored in an IC card with radio communication and inputting the data into, for example, a personal computer. The IC card reader includes a card holder and a fastening mechanism which attaches the card holder to a data reading table detachably. This structure provides for ease of usage of the card reader to a user in two selectable modes. In the first mode, the stored data may be inputted into the computer only by passing the IC card over the data reading table instantaneously. In the second mode, the user may insert the IC card into the card holder fitted on the data reading table to transmit data to the compute through radio communication.
摘要翻译：提供一种IC卡读取器，用于通过无线电通信读取存储在IC卡中的数据，并将数据输入到例如个人计算机中。 IC卡读卡器包括卡夹和紧固机构，其将卡夹可拆卸地附接到数据读取台。这种结构提供了以两种可选模式方便使用读卡器的用户。在第一模式中，存储的数据可以仅通过将IC卡通过数据读取表立即输入到计算机。在第二模式中，用户可以将IC卡插入到安装在数据读取表上的卡夹中，以通过无线电通信将数据发送到计算。

8. 发明授权

US5247305A Responder in movable-object identification system 失效
标题翻译：可移动物体识别系统中的响应者
公开(公告)号：US5247305A
公开(公告)日：1993-09-21
申请号：US918123
申请日：1992-07-23
申请人： Tatsuya Hirata , Yoshiyuki Kago
发明人： Tatsuya Hirata , Yoshiyuki Kago
IPC分类号： G01S13/75 , G06K7/00
CPC分类号： G06K7/0008 , G01S13/758
摘要： A movable-object identification system includes an interrogator for transmitting an interrogation signal, and a responder mounted on a movable object for transmitting a reply signal in response to the interrogation signal. The reply signal contains identification information. The responder includes an antenna for receiving the interrogation signal from the interrogator and for radiating the reply signal; and an input device connected to the antenna for receiving an electric power of the interrogation signal received by the antenna. The input device includes a receiving element for dividing the received electric power into a first separation electric power and a second separation electric power corresponding to a traveling and reflected wave of the interrogation signal, respectively. The receiving element has an impedance. The responder further includes a generating device for generating predetermined identification information using the first separation electric power; and a modulating device, connected in parallel with the input device and connected to the antenna, for varying the impedance of the receiving element in accordance with the generated identification information, for modulating the second separation electric power of the interrogation signal in accordance with the identification information to generate the reply signal, and for feeding the reply signal to the antenna.
摘要翻译：可移动物体识别系统包括用于发送询问信号的询问器，以及安装在可移动物体上的应答器，用于响应询问信号发送应答信号。答复信号包含识别信息。应答器包括用于从询问器接收询问信号并发射回复信号的天线; 以及连接到天线的输入装置，用于接收由天线接收的询问信号的电力。所述输入装置包括：接收元件，用于将接收到的电力分别分成与所述询问信号的行进和反射波相对应的第一分离电力和第二分离电力。接收元件具有阻抗。响应者还包括用于使用第一分离电力产生预定识别信息的生成装置; 以及与输入装置并联连接并连接到天线的调制装置，用于根据所生成的识别信息改变接收元件的阻抗，用于根据识别信号调制询问信号的第二分离电力用于生成应答信号的信息，以及将该应答信号馈送到天线。

9. 发明授权

US07601878B2 Process and unit for production of perfluoroalkyl iodide telomers 有权
标题翻译：用于生产全氟烷基碘调聚物的方法和单元
公开(公告)号：US07601878B2
公开(公告)日：2009-10-13
申请号：US11723115
申请日：2007-03-16
申请人： Tatsuya Hirata , Kouzou Noda , Jun Miki
发明人： Tatsuya Hirata , Kouzou Noda , Jun Miki
IPC分类号： C07C17/38 , C07C17/269 , C07C17/278
CPC分类号： B01J8/0055 , B01J8/222 , B01J38/00 , B01J2208/00176 , B01J2208/00867 , C07C17/278 , C07C17/38 , Y02P20/582 , Y02P20/584 , C07C19/16
摘要： A solid catalyst used in, for example, production of a perfluoroalkyl iodide telomer is effectively and continuously recovered and the recovered catalyst is continuously recycled to the reactor for reuse. A slurry containing a reaction product and the catalyst is drawn from the reaction system, and the catalyst in the drawn slurry is classified by means of a hydrocyclone, whereby a high-concentration slurry whose catalyst concentration is higher than that of the drawn slurry and a low-concentration slurry whose catalyst concentration is lower than that of the drawn slurry are obtained, and the high-concentration slurry is recycled to the reaction system.
摘要翻译：用于例如生产全氟烷基碘调节剂的固体催化剂被有效且连续地回收，并将回收的催化剂连续再循环到反应器中再使用。从反应体系中抽出含有反应产物和催化剂的浆料，并且通过水力旋流器对拉伸浆料中的催化剂进行分级，由此得到催化剂浓度高于拉制浆料的高浓度浆料和得到催化剂浓度低于所提取的浆液的低浓度浆料，将高浓度浆液再循环至反应体系。

10. 发明申请

US20070200148A1 Element for solid-state imaging device 有权
标题翻译：用于固态成像装置的元件
公开(公告)号：US20070200148A1
公开(公告)日：2007-08-30
申请号：US11653919
申请日：2007-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka
发明人： Tatsuya Hirata , Shouzi Tanaka
IPC分类号： H01L29/768
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14623
摘要： In an element for a MOS type solid-state imaging device, a leakage current caused by a stress generated in a vicinity of an element isolation region having an STI structure is reduced. The element for the MOS type solid-state imaging device comprises: a signal accumulation region 102, of a second conductivity type, provided in an interior of a semiconductor substrate or well 101 of a first conductivity type, for accumulating a signal charge generated by performing photoelectric convention; agate electrode 104 provided on the semiconductor substrate or well 101; a drain region 105, of a second conductivity type, provided on a surface portion, of the semiconductor substrate or well 101, on which the gate electrode is formed; and an element isolation region 201 provided on the surface portion, of the semiconductor substrate or well 101, on which the gate electrode is formed. The element isolation region 201 has the STI structure, and a cavity 202 is formed in an interior of the element isolation region 201.
摘要翻译：在用于MOS型固态成像器件的元件中，由具有STI结构的元件隔离区域附近产生的应力引起的漏电流减小。用于MOS型固态成像器件的元件包括：设置在半导体衬底或第一导电类型的阱101的内部的第二导电类型的信号聚集区域102，用于累积通过执行产生的信号电荷光电会议; 设置在半导体衬底或阱101上的玛瑙电极104; 设置在其上形成栅电极的半导体衬底或阱101的表面部分上的第二导电类型的漏极区域105; 以及设置在形成有栅电极的半导体衬底或阱101的表面部分上的元件隔离区域201。元件隔离区域201具有STI结构，并且在元件隔离区域201的内部形成空腔202。

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